Hybrid Switch Research Articles

Lifetime (Bx) improvement of PV inverter using Si-SiC H-IGBT/Diode: a reliability approach

Technological advancements have made it possible to harness the power of renewable energy sources. The efficiency of power electronic devices has increased to almost 98%. In order to reduce the risks of failure and maintain the operation of photovoltaic (PV)-based energy converters, reliable devices are needed. Due to the increasing number of wide-bandgap silicon in electronic converters, the need for more efficient and reliable devices has become more prevalent. However, the cost of these devices is a major issue. Hence, in this work extensive analysis of hybrid silicon (Si)-IGBT and silicon carbide (SiC) antiparallel Diode (H-IGBT/Diode) based PV inverter is proposed to improve the lifetime (Bx). A reliability oriented lifetime assessment is performed on a test case of single stage three kilowatt photovoltaic inverter with 600 V/30 A hybrid switch. Long term mission profile for one year is considered for evaluation at B. V. Raju Institute of Technology (BVRIT), Telangana, India. Finally, B10 lifetime is calculated, comparison analysis is presented between conventional Si-IGBT and proposed Si-SiC H-IGBT/Diode. The results of the study revealed that the H-IGBT exhibited a significant increase in PV inverter reliability.

35 kW isolated fuel-cell DC–DC converter design based on PWM resonant converter with hybrid switch structure

35 kW isolated fuel-cell DC–DC converter design based on PWM resonant converter with hybrid switch structure

Hybrid‐triggered predictive control of cyber‐physical‐systems under cyber‐attacks

AbstractIn this article, the hybrid‐triggered predictive control of cyber‐physical systems (CPSs) under cyber‐attacks is researched. Firstly, considering the unpredictable state of the CPSs, an observer‐based model is constructed, and the predictor is put forward to predict state. Secondly, a hybrid‐triggered scheme is adopted to avoid unnecessary‐data transmission by introducing a hybrid switch mode. Thirdly, the deception attacks and DoS attacks are existed in sensor‐to‐observer (S‐O) and observer‐to‐controller (O‐C), separately. Two types of attack modeling are established based on their characteristics. With the proposed control method, some sufficient conditions are obtained to ensure the input‐to‐state stability (ISS) of CPSs. Finally, the results of simulation examples are received to testify the advantage of developed control strategy.

Single Power-Conversion Active-Clamped AC/DC Converter Employing Si/SiC Hybrid Switch

This article proposes a single power-conversion voltage-fed active-clamped ac/dc converter that uses an Si IGBT/SiC MOSFET hybrid switch. By incorporating two switches at the primary side of the circuit, we removed the full-bridge diode rectifier, and thereby reduced the required number of power devices. Inherent bidirectional active-clamp circuit naturally limits the voltage spike at bottom switches and reuses the energy accumulated in the leakage inductor during both positive and negative grid half-cycles. Also, it offers dual-resonant power transfer paths, so it can deliver the high power with less circuit components. The alternating switching modulation makes one of the bottom switches turn off with hard switching per grid half-cycle while holding other bottom switch on to conduct the current. In contrast, top switches are softly switched with low root-mean-square current. Therefore, the converter with proposed switching modulation enables direct substitution of Si IGBT for an SiC MOSFET at the top on the primary side, and thereby which cuts down the circuit implementation cost. We built a 1 kW prototype converter and confirmed its validity.

Hybrid Switch with Tungsten-clad Copper Contacts for Arc-free On/Off Switching up to DC 400 A

Direct current (DC) switches are one of the key components of DC power distribution systems. During the closing and opening periods of the switch, arc discharges are generated causing contact erosion and a reduction of dielectric strength between the contacts. A hybrid DC switch, consisting of mechanical contacts, semiconductor devices, and metal-oxide varistors, can shorten the arc duration; however, a short duration arc still causes contact erosion and induces a reignition of the arc. Arc-free DC switching up to 400 A for closing and opening periods is demonstrated using tungsten-clad copper contacts anda SiC-MOSFET module. The tungsten part of the contacts increases the boiling voltage of the latter, and the copper part decreases the maximum temperature at the contact spot. Both parts are crucial to achieving arc-free switching.

Enhancing Turn-off Performance in IGCT-Based High Power Applications—Part Ⅱ: Hybrid Switch with IGBT Integration and Experimental Validation

Enhancing Turn-off Performance in IGCT-Based High Power Applications—Part Ⅱ: Hybrid Switch with IGBT Integration and Experimental Validation

A Novel Switching Strategy Based on the Driving Voltage and Switching Sequence for Si/SiC Hybrid Switch

A Novel Switching Strategy Based on the Driving Voltage and Switching Sequence for Si/SiC Hybrid Switch

Accurate Current Measurement Method in High Frequency Hybrid Switch Test and Application

Accurate Current Measurement Method in High Frequency Hybrid Switch Test and Application

High-Voltage Si IGBT/SiC MOSFET Series-Connected Hybrid Switch

High-Voltage Si IGBT/SiC MOSFET Series-Connected Hybrid Switch

Super-twisting sliding mode control for neutral point voltage of three-phase four-wire inverter based on SiC/Si hybrid switch

The three-phase four-wire voltage source inverter (3P4W VSI) is widely used in applications like uninterrupted power supply (UPS) and bidirectional onboard charger. The increasing power density demand requires higher switching frequency and lower switching loss. To fulfill the conflicting objectives, two-fold methodology is proposed in this paper: 1) SiC/Si hybrid switches (HyS) together with recently reported gate trigger are reported for the first time in the 3P4W VSI; 2) the natural point voltage is controlled to track a sinusoidal voltage with the frequency equal to 3 times of fundamental frequency in order to achieve higher DC-bus voltage utilization rate, and further reduce the switching loss. The traditional PI controller is very hard to achieve desired performance due to both the nonlinearity and the variant reference of the natural point voltage control system. Thereby, the super-twisting sliding mode control (ST-SMC) is proposed in this paper to achieve desired tracking performance and fast dynamic response. The effectiveness and superiority of the system are verified by both simulation and experiment comparison with the existing methods using a 5 kW prototype.

Review, Comprehensive Analysis and Derivation of Analytical Power Loss Calculation Equations for Two- to Three-Level Midpoint Clamped Inverter Topologies with Hybrid Switch Configurations

Increased performance requirements in new power electronics areas of application, such as electric aircraft, make innovations on different design levels necessary. In order to quickly compare different topologies, analytical loss equations provide a fast and straightforward way to narrow down the possible solution space. The approach widely used in the literature results in long and complex terms, which can only be compared between different literature sources with great effort. Moreover, the literature lacks a detailed summarizing description of these analytical equations and their derivation, starting from the standard two-level VSI up to three-level midpoint clamped inverter topologies, such as the ANPC topology in its different modulation schemes. The application of such higher-level inverter topologies allows hybrid device configurations to become performant solutions. This work aims to give a closed-form description of the analytical loss modeling and the theoretical background and provide an implementation approach for a wide span of inverter topologies and for different modulation methods.

A New Single-Cell Hybrid Inductor-Capacitor DC-DC Converter for Ultra-High Voltage Gain in Renewable Energy Applications

In this paper, a new single-cell hybrid switched inductor DC-DC converter is proposed to demonstrate the verification of ultra-high voltage gain in renewable energy applications (REA). The modification involves adding a single cell of an inductor with a diode and double capacitor to increase voltage transfer gain. Additionally, this modification helps prevent the input current from becoming zero, pulsating at very low duty cycles. The single cell of the hybrid inductor is interleaved with the main switch to reduce current stress when the capacitor of the single-cell inductor charge becomes zero. Moreover, the addition of a modified hybrid switch inductor with a capacitor, operating in dual boosting mode with a single switch, allows the converter to achieve ultra-high voltage gain. The proposed converter offers several advantages, including ultra-high voltage gain, high efficiency, low voltage stress on power MOSFETs, diodes, inductors, and capacitors, as well as low switching and conduction losses. Furthermore, the proposed converter utilizes transformerless and non-coupled inductors. Mathematical equations have been derived for the discontinuous conduction mode (DCM) and continuous conduction mode (CCM) and implemented using Matlab Simulink software to validate the results. In addition, a dual PI controller is designed for the proposed converter to verify the fixed output voltage. Experimental results have also been obtained for a 200 W prototype, with the input voltage varying between 20 V and 40 V, and an output voltage of 200 V at an efficiency of 96.5%.

A Low-Voltage Class-D VCO with Implicit Common-Mode Resonator Implemented in 55 nm CMOS Technology

This paper presents a Class-D voltage-controlled oscillator (VCO) with a hybrid switch capacitor array. In order to reduce the phase noise of the oscillator, an implicit common-mode resonance technique is used, effectively suppressing the conversion of power supply noise to VCO phase noise. At the same time, due to the use of a transformer in implicit common-mode resonance technology, the core area of the oscillator is not significantly increased compared with the traditional Class-D VCO. Based on the proposed technology, the proposed VCO exhibits lower phase noise compared to the original Class-D VCO, and also has many different advantages compared to low-voltage VCOs produced by similar technological processes. The proposed VCO was designed in a 55 nm CMOS process. Simulation results show that this VCO has an operating range from 4.36 to 6.43 GHz, resulting in the frequency tuning range (FTR) of 38.5%. In addition, its power consumption was 3.46 mW, the phase noise at 4.36 GHz was −124.2 dBc/Hz@1 MHz, and the figure of merit (FoM) was −191.6 dBc/Hz@1 MHz. The core area is 0.15 mm2.

A strategy for improving the SHEPWM commutation speed of CSI through hybrid switches

High-power current source inverters (CSI) usually operate at a low switching frequency to reduce switching loss. To suppress low-order harmonics and simplify filter design, the selective harmonic elimination pulse width modulation (SHEPWM) technique is a feasible common modulation strategy in industrial applications. This paper proposes an operational strategy that uses an H7 current source inverter (H7-CSI) with hybrid switches to perform the SHEPWM technique. On the basis of retaining the conventional H6 inverter bridge, the commutation speed of the CSI is improved by an additional shunt-connected high-performance power switch. The proposed scheme solves the problem that the CSIs built with low-speed switches (such as GTOs) may have difficulty for implementing the setting pulse widths of null states, while further reducing the switching losses at an acceptable cost. In addition, mitigating the influence of overlap-time by optimizing the driving signal of the H6 converter bridge. Finally, simulation and experiments have verified the effectiveness of the proposed CSI scheme.

Evaluation and Suppression Method of Turn-Off Current Spike for SiC/Si Hybrid Switch

SiC MOSFET/Si IGBT (SiC/Si) hybrid switch usually selects the gate control pattern that SiC MOSFET turns on earlier and turns off later than Si IGBT, with the aim of making the hybrid switch show excellent switching characteristics of SiC MOSFET and reduce switching loss. However, when SiC MOSFET turns off, the fast slew rate of drain source voltage causes the current spike in Si IGBT due to the effects of parasitic capacitance charging and carrier recombination, which will produce additional turn-off loss, thus affecting the overall efficiency and temperature rise of the converter. Based on the double pulse test circuit of SiC/Si hybrid switch, the mathematical model of the turn-off transient process is established. The effects of the remnant carrier recombination degree of Si IGBT, the turn-off speed of SiC MOSFET and the working conditions on the turn-off current spike of hybrid switch are evaluated. Although adjusting these parameters can reduce the turn-off current spike somewhat, additional losses will be introduced. Therefore, a new method to suppress the turn-off current spike is proposed to balance the power loss and current stress.

An organic-inorganic hybrid material [Me3NCH2CH2F]FeBr4 exhibits three-step SHG on/off.

A novel solid-state second harmonic generation (SHG) organic-inorganic hybrid switch [Me3NCH2CH2F]FeBr4 (1) exhibits genuine three-step "on-off-on-off" SHG-switching above-room temperature, which has potential applications in multi-step optical devices.

Simulation and analysis models of hybrid software­configured devices

The analysis of the algorithm, based on which the simulation and analytical model of the hybrid software-configurable device is automatically synthesized, was carried out. The solution for modeling OpenFlow equipment was also considered, and an original OpenFlow switch model was developed, which is distinguished by the ability to manage delays based on the results of its mathematical model. The operation scheme of a hybrid switch that supports both traditional switching and OpenFlow switching has been developed. This scheme allows solving complex tasks in the physical infrastructure of virtualized networks. A module has been developed to create a realistic delay and limit the capacity and performance of the hybrid switch model, which can work according to the data obtained as a result of the experimental study. Additional traffic processing schemes have been developed for a more detailed implementation of the hybrid software-configurable equipment model. The basic model of the switch presented in the INET OMNeT++ framework is considered. The switch is represented by a set of modules interacting through the OMNeT transmission system. The most detailed modules of Ethernet interfaces are implemented, in particular, there are implementations of the input queue of the Tail-Drop type, output queues of the FIFO, RED, WRED, PQ, CBFQ types, as well as the implementation of the transmission delay on the line. The virtualization technology of network functions, which is built on the basis of software-configured networks, has been studied, and the most popular Linux-based solutions are used as a software-controlled Open vSwitch switch. The considered methods of forming a model of such a switch. Open vSwitch is architecturally different from both classical and OpenFlow real switches, as there are no dedicated packet refactoring units (except for network cards with hardware header processing and FPGAs), dedicated memory and processors for switching, Open vSwitch uses a kernel module (or module DPDK for direct transmission without the participation of the kernel) to transmit packets based on information from the OVSDB database or OpenFlow tables.

Design and Analysis of Advanced Low Power Consumption Hybrid Switch with Experimental Verification

Design and Analysis of Advanced Low Power Consumption Hybrid Switch with Experimental Verification

Impact of Gate Resistance on Improving the Dynamic Overcurrent Stress of the Si/SiC Hybrid Switch

A silicon/silicon carbide (Si/SiC) hybrid switch (HyS), comprised of a high-current Si insulated gate bipolar transistor and a low-current SiC metal oxide semiconductor field effect transistors, gains attention because it offers lower <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> -state loss under both light and heavy loads. However, the dynamic overcurrent stress experienced by the HyS under the heavy load has to be coped with to avoid reliability degradation and the maximum current rating limitation. This article comprehensively studies how gate resistances regulate the dynamic behavior of the HyS under the heavy load condition. Experiments and analyses are conducted for both turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> and turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> processes. It is found that the gate resistance is important for not only the d <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i> /d <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</i> control but also the overcurrent suppression. Moreover, the lower switching loss can be achieved by adjusting gate resistances when the HyS operates at a heavy load, compared with the gate timing control. A guideline is developed for the design of the gate resistances. This study offers an insight into the role of gate resistances in switching performances of the HyS and an alternative way of coping with the dynamic overstress stress.

Si-IGBT and SiC-MOSFET hybrid switch-based 1.7 kV half-bridge power module

• Design guidelines, fabrication process, and evaluation of a 1.7-kV and 300-A multi-chip half bridge power module using the novel Si-IGBT and SiC-MOSFET hybrid switch in each switch position. • The module achieves its maximum DC current rating with a 6:1 current ratio of Si to SiC. • A novel custom-designed TPG-encapsulated metal base plate is proposed. • Silver clips for top-side interconnect in the module, facilitating a wire bond-less interconnection, high reliability, and low power loop inductance. • High thermal dissipation capability while maintaining a near-isolated thermal path for the SiC MOSFET to operate at a higher temperature than the Si-IGBT. This paper informs the design guidelines, fabrication process, and evaluation of a 1.7-kV and 300-A multi-chip half bridge power module using the novel Si-IGBT and SiC-MOSFET hybrid switch in each switch position. The module achieves its maximum DC current rating with a 6:1 current ratio of Si to SiC. This high current ratio yields significant cost savings compared to an all-SiC power module. The module employs high-reliability silver clips, which replaces conventional wire bonds for top-side interconnection, to partly enable a low power loop inductance of 12.38 nH. A novel thermal pyrolytic graphite-encapsulated metal baseplate is key to reducing the thermal coupling among the adjacent Si and SiC die, enabling higher junction temperature for SiC die relative to the Si die.