In depositing thin PbTe〈Ga〉 films onto Si and SiO2 /Si substrates by the hot-wall method, Pb1 – xGa x melts were used as Ga vapor sources in combination with separate Pb and Te vapor sources. The vaporization of Pb1 – xGa x (0.15 ≤ x≤ 0.95) melts was studied between 1000 and 1300 K in the reaction chamber of the deposition unit. Using electron probe x-ray microanalysis, all the deposited films were shown to contain Ga. Pb1 – xGa x melts were also used as separate Pb and Ga vapor sources.