Thin films of Zn 3P 2 have been grown on mica and glass substrates at various growth temperatures ranging from 200 to 350°C by the hot wall deposition technique. The surface morphology of these films was studied by the scanning electron microscope (SEM). The grain size was observed to be increasing with increasing substrate temperature. The electrical resistivities of these films were very high (−10 5 micro cm) depending upon the preparation conditions like substrate temperature and pressure of the ambient gas during growth etc. The resistivity was brought down to a range 10 2 to 10 3 micro cm by silver doping during growth of the film. Schottky barriers were formed on these doped thin films using Al (i) on the as-grown film surface and (ii) on a surface after chemical treatment using dilute NaOH, acetone and deionized water in sequence. A marked change in the characteristics of AlZn 3P 2 junctions was observed after surface etching.