Abstract
Zinc phosphide thin films have been deposited by a hot-wall deposition technique under high antimony vapor pressures. It is observed that the Sb-rich films retain the Zn3P2 crystal structure with a larger c axis. The Sb atoms, with a larger atomic radius than P atoms, are incorporated into the P sublattice of Zn3P2 yielding the mixed crystal Zn3P2(1−x)Sb2x . The films have lower band-gap energy and resistivity than undoped Zn3P2 films.
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