SiCf/Ti2AlNb composites were fabricated using the magnetron sputtering precursor wires method in conjunction with the hot isostatic pressing (HIP) technique. The morphology, elemental distribution, and structural characteristics of the interfacial reaction layer (RL) were examined through scanning electron microscopy (SEM), transmission electron microscopy (TEM), and wavelength dispersive spectroscopy (WDS). The results showed that the interface between SiC fibers and Ti2AlNb reacted to form TiC and α2. Due to the interdiffusion of elements at the interface, a small amount of Al atoms existed in the TiC layer. These Al atoms reduced the stacking fault energy (SFE) of TiC, which is beneficial for the formation and stability of Σ3{111} twin boundaries.
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