Abstract
SiCf/Ti2AlNb composites were fabricated using the magnetron sputtering precursor wires method in conjunction with the hot isostatic pressing (HIP) technique. The morphology, elemental distribution, and structural characteristics of the interfacial reaction layer (RL) were examined through scanning electron microscopy (SEM), transmission electron microscopy (TEM), and wavelength dispersive spectroscopy (WDS). The results showed that the interface between SiC fibers and Ti2AlNb reacted to form TiC and α2. Due to the interdiffusion of elements at the interface, a small amount of Al atoms existed in the TiC layer. These Al atoms reduced the stacking fault energy (SFE) of TiC, which is beneficial for the formation and stability of Σ3{111} twin boundaries.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
