Polaron Hopping Research Articles

Contribution of strong electron-phonon interaction in the transport properties of La0.8Ca0.2Mn0.5Ni0.5O3 system

La0.8Ca0.2Mn0.5Ni0.5O3 NTC (negative thermal coefficient) thermo-sensitive material was prepared using a conventional solid-state reaction method. From the structural results, we found that the material is pure and crystallizes in the orthorhombic structure with a Pnma space group. It is found that the La0.8Ca0.2Mn0.5Ni0.5O3 ceramic can be used as an NTC thermistor compound in specific temperature sensors and attenuators. Based on Holsten's theory, detailed electrical investigations concerning the nature of the activated small polaron hopping mechanism were reported. The temperature dependence of the DC conductance was used to determine the electrical conduction processes that govern the transport properties of La0.8Ca0.2Mn0.5Ni0.5O3. Hence, the DC mechanisms exhibit changes from the variable range hopping at very low temperatures to the non-adiabatic small polaronic hopping at T = 210 K. In the intermediate temperature range, the semiconductor behavior of La0.8Ca0.2Mn0.5Ni0.5O3 was attributed to the contribution of the tunneling transport process. At various temperatures, the conductance spectra were discussed based on Jonscher and Bruce's laws. Contributions of the overlapping-large-polaron-tunneling, the correlated barrier hopping, the quantum mechanical tunneling, and the non-overlapping small polaron tunneling mechanisms to the transport properties were observed in the dispersive region of the conductance spectra. In addition, Summerfield scaling and corrected Summerfield scaling approaches prove that the charge mobility is temperature-dependent. The positive value of the correction parameter α = 1.2 confirms the presence of interactions in the studied sample.

Strongly correlated electron system NiWO4: A new family of materials for triboelectrics using inherent Coulombic repulsion

The strongly correlated electron system (SCES) insulators promise a wide range of intriguing physical phenomena arising from the exotic charge gap depending on the strength of the Coulombic repulsion between d and f orbital cations. The SCES exhibits polaron hopping conduction, which requires a higher activation energy for carrier conduction between nearest cations, indicating a strong insulating character with relatively high permittivity. Here, we demonstrate that the NiWO4 SCES insulator, which is formed by Coulombic repulsion between the nearest d orbital of Ni, proposes a suitable triboelectric material unlisted system from conventional metal oxides. The higher degree of freedom in NiWO4 by the lower symmetry of monoclinic structure and an additional selection of composition exhibits high relative permittivity (∼13.8) in a wide range of temperatures (up to 180 ℃). The optimized simple mixture of NiWO4 and PDMS (polydimethylsiloxane) for the negatively charged material to triboelectric nanogenerator (TENG) presents 1.78 times higher output compared to the pristine PDMS film-based TENG. NiWO4, considering the physical properties of the SCES determined by Coulombic repulsion strength, paves the way for a new option of TENG materials following the high permittivity.

Electronic and optical properties of Na2O doped P2O5-TeO2− CoO-ZnO glasses

The phospho-tellurite glasses, (P2O5)0.25-(TeO2)0.5-x-(CoO)0.1-(ZnO)0.15-(Na2O)x ; x = 0.15, 0.20, 0.25, 0.30 and 0.35 were prepared by melt quenching and their non-crystalline nature confirmed through XRD. Density is found decreased and molar volume increased with increase of Na2O concentration and they behaved opposite to each other. The physical parameters such as transition metal ion density, mean distance between TMIs, small polaron radius, oxygen packing density and field strength were estimated. DC conductivity was measured by following two probe method in the temperature range 303K – 633K. High temperature conductivity is explained by Mott’s small polaron hopping (SPH) model and low temperature conductivity by Mott’s VRH model. Both conductivity and activation energy are found to be increasing with Na2O content. Density of states at Fermi level are found to be of the order of 1021 to 1024 eV−1 cm−3. UV-Vis spectra were recorded for the wavelength range 200-800 nm. Optical band gap (direct and indirect) except for x=0.20 is found increased, urbach energy and refractive indexes are found decreased with Na2O concentration. Various optical parameters such as molar polarizibility, metallization criterion, reflection loss, electronic polarizability, optical transmission coefficient, dielectric constant and optical dielectric constant have been determined.

Magnetoelectric Properties of Aurivillius-Layered Perovskites

In the present work, we have synthesized rare-earth ion modified Bi4−xRExTi2Fe0.7Co0.3O12−δ (RE = Dy, Sm, La) multiferroic compounds by the conventional solid-state route. Analysis of X-ray diffraction by Rietveld refinement confirmed the formation of a polycrystalline orthorhombic phase. The morphological features revealed a non-uniform, randomly oriented, plate-like grain structure. The peaks evident in the Raman spectra closely corresponded to those of orthorhombic Aurivillius phases. Dielectric studies and impedance measurements were carried out. Asymmetric complex impedance spectra suggested the relaxation of charge carriers belonging to the non-Debye type and controlled by a thermally activated process. Temperature-dependent AC conductivity data showed a change of slope in the vicinity of the phase transition temperature of both magnetic and electrical coupling natures. Based on the universal law and its exponent nature, one can suppose that the conduction process is governed by a small polaron hopping mechanism but significant distortion of TiO6 octahedral. The doping of the A-sites with rare-earth element ions and changes in the concentrations of Fe and Co ions located on the B-sites manifested themselves in saturated magnetic hysteresis loops, indicating competitive interactions between ferroelectric and canted antiferromagnetic spins. The magnetic order in the samples is attributed to pair-wise interactions between adjacent Fe3+–O–Fe3+, Co2+/3+–O–Co3+/2+, and Co2+/3+–O–Fe3+ ions or Dzyaloshinskii–Moriya interactions among magnetic ions in the adjacent sub-lattices. As a result, enhanced magnetoelectric coefficients of 42.4 mV/cm-Oe, 30.3 mV/cm-Oe, and 21.6 mV/cm-Oe for Bi4−xDyxTi2Fe0.7Co0.3O12−δ (DBTFC), Bi4−xLaxTi2Fe0.7Co0.3O12−δ (LBTFC), and Bi4−xSmxTi2Fe0.7Co0.3O12−δ (SBTFC), respectively, have been obtained at lower magnetic fields (<3 kOe). The strong coupling of the Aurivillius compounds observed in this study is beneficial to future multiferroic applications.

Capturing ion trapping and detrapping dynamics in electrochromic thin films

Ion trapping has been found to be responsible for the performance degradation in electrochromic oxide thin films, and a detrapping procedure was proved to be effective to rejuvenate the degraded films. Despite of the studies on ion trapping and detrapping, its dynamics remain largely unknown. Moreover, coloration mechanisms of electrochromic oxides are also far from clear, limiting the development of superior devices. Here, we visualize ion trapping and detrapping dynamics in a model electrochromic material, amorphous WO3. Specifically, formation of orthorhombic Li2WO4 during long-term cycling accounts for the origin of shallow traps. Deep traps are multiple-step-determined, composed of mixed W4+-Li2WO4, amorphous Li2WO4 and W4+-Li2O. The non-decomposable W4+-Li2WO4 couple is the origin of the irreversible traps. Furthermore, we demonstrate that, besides the typical small polaron hopping between W5+ ↔ W6+ sites, bipolaron hopping between W4+ ↔ W6+ sites gives rise to optical absorption in the short-wavelength region. Overall, we provide a general picture of electrochromism based on polaron hopping. Ion trapping and detrapping were demonstrated to also prevail in other cathodic electrochromic oxides. This work not only provides the ion trapping and detrapping dynamics of WO3, but also open avenues to study other cathodic electrochromic oxides and develop superior electrochromic devices with great durability.

Combined transport and dielectric models and experimental characterization based on impedance spectroscopy for studying the microstructural and transport properties of electro-ceramic perovskites

Collective investigations on the electrical resistivity, complex dielectric permittivity, complex impedance, conductivity, and electric modulus properties of La0.55Ca0.45Mn0.8Nb0.2O3 (LCMNO) are conducted. The impedance spectroscopy (IS) technique is reviewed to examine the electrical and dielectric responses of the material according to the carrier displacement, including core-shell structure, grain boundary effects, dielectric relaxation (local relaxation), and long-range conduction (non-local relaxation). This technique can correlate the electrical and dielectric responses with the ceramics’ microstructural effects (grain boundary and grain (core-shell) zones). For LCMNO, the electrical resistivity study confirms the presence of a metal-semiconductor transition at TM-SC=66 K. It points towards a gradual crossover from the thermally activated Small Polaron Hopping (SPH) to the Variable Range Hopping (VRH) process at low temperatures and for T> TM-SC. The dielectric results confirm the presence of various types of polarization effects. The occurrence of a dipolar reorientation is attributed to long-range electrical conduction. In addition, the accumulation of the activated charge carriers increases the Maxwell-Wagner polarization resulting from an internal barrier layer capacitor (IBLC) microstructure. The electric modulus study confirms the existence of a correlation between the mobile charge carrier’s motions. From the complex impedance, dielectric, and electric modulus, it is possible to label a material’s conductive and dielectric natures (non-Debye-relaxation-type).

Effect of Pr3+ Substitution at the A-Site on the Structural and Electrical Properties of Hole-Doped La-Based Manganites

In this study, the effect of praseodymium substitution at La-site on structural and electrical transport properties of La0.5Ba0.5MnO3 was investigated. Polycrystalline La0.5-xPr0.5x Ba0.5MnO3 (x = 0, 0.50, 1.00) were synthesized using a conventional solid-state method. The powder X-ray diffraction patterns show a single-phase orthorhombic distorted perovskite structure with space group Pnma. The Rietveld refinement analysis showed that the unit cell volume decreased as Pr3+ substitution increased which may be attributed to the different ionic radii of ions. Electrical resistivity measurements by using standard four-point probe resistivity measurement in a temperature range of 30 K to 300 K. As the Pr3+ concentration increases, metal-insulator transition, TMI decreases from 264K (x=0) to 157K (x=1.00) while resistivity increases from 1.16 Ω.cm (x = 0) to 20.3 Ω.cm (x =1.00). The decreased TMI are attributed to the decrease in tolerance factor which indicates enhancement in MnO6 octahedral distortion consequently reduce double exchange interaction. The electrical resistivity in the metallic region for all samples was fitted with the combination of domain/ grain boundary, electron-electron, electron-magnon and electron-phonon scattering processes. The resistivity behaviour in the insulating region for all samples was attributed to small polaron hopping model which revealed that the activation energies increased as Pr3+ content increased due to the enhancement in the distortion of MnO6 octahedral.

The Conductance Isotope Effect in Oligophenylene Imine Molecular Wires Depends on the Number and Spacing of 13C-Labeled Phenylene Rings.

We report a strong and structurally sensitive 13C intramolecular conductance isotope effect (CIE) for oligophenyleneimine (OPI) molecular wires connected to Au electrodes. Wires were built from Au surfaces beginning with the formation of 4-aminothiophenol self-assembled monolayers (SAMs) followed by subsequent condensation reactions with 13C-labeled terephthalaldehyde and phenylenediamine; in these monomers the phenylene rings were either completely 13C-labeled or the naturally abundant 12C isotopologues. Alternatively, perdeuterated versions of terephthalaldehyde and phenylenediamine were employed to make 2H(D)-labeled OPI wires. For 13C-isotopologues of short OPI wires (<4 nm) in length where the charge transport mechanism is tunneling, there was no measurable effect, i.e., 13C CIE ≈ 1, where CIE is defined as the ratio of labeled and unlabeled wire resistances, i.e., CIE = Rheavy/Rlight. However, for long OPI wires >4 nm, in which the transport mechanism is polaron hopping, a strong 13C CIE = 4-5 was observed. A much weaker inverse CIE < 1 was evident for the longest D-labeled wires. Importantly, the magnitude of the 13C CIE was sensitive to the number and spacing of 13C-labeled rings, i.e., the CIE was structurally sensitive. The structural sensitivity is intriguing because it may be employed to understand polaron hopping mechanisms and charge localization/delocalization in molecular wires. A preliminary theoretical analysis explored several possible explanations for the CIE, but so far a fully satisfactory explanation has not been identified. Nevertheless, the latest results unambiguously demonstrate structural sensitivity of the heavy atom CIE, offering directions for further utilization of this interesting effect.

Dielectric Spectroscopy of Non-Stoichiometric SrMnO3 Thin Films

The dielectric properties of non-stoichiometric SrMnO3 (SMO) thin films grown by molecular beam epitaxy were systematically investigated. Especially, the effects of cation stoichiometry-induced diverse types and densities of defects on the dielectric properties of SMO films were revealed. Two anomalous dielectric relaxation behaviors were observed at different temperatures in both Sr-rich and Mn-rich samples. High-temperature dielectric relaxation, resulting from a short-range Mn-related Jahn–Teller (JT) polaron hopping motion, was reinforced by an enhancement of JT polaron density in the Sr-rich film, which contained abundant SrO Ruddlesden–Popper (R-P) stacking faults. However, an excessive number of disordered Sr vacancy clusters in Mn-rich thin film suppressed the hopping path of JT polarons and enormously weakened this dielectric relaxation. Thus, The Sr-rich film demonstrated a higher dielectric constant and dielectric loss than the Mn-rich film. In addition, low-temperature dielectric relaxation may be attributed to the polarization/charge glass state.

Thermal and thermoelectric properties of potassium-doped Pr0.6Sr0.4-xKxMnO3 (x = 0.05 and x = 0.1)

The temperature dependence of thermal conductivity and thermopower was studied for a series of monovalent doped Pr0.6Sr0.4-xKxMnO3 (with x = 0.05 and x = 0.1). The influence of the external magnetic field up to 2 T was investigated with a focus on the vicinity of the ferromagnetic–paramagnetic transition. The analysis of κ(T) data suggests that thermal transport is governed by phonon scattering processes, as both the electronic and magnon contribution to total thermal conductivity is well below 1%. The temperature behavior corresponds to typical curves observed in other manganites, both in shape and value. Thermopower investigation S(T) showed a negative value in all studied temperatures, and for further analysis was divided into ferromagnetic and paramagnetic regions. In the first one, the experimental data followed a standard empirical equation S0+S3/2T3/2+S4T4, bringing information about the prevailing electron–magnon scattering processes. For the latter one, the polaron hopping model was used.

Debye Temperature Evaluation for Secondary Battery Cathode of α-SnxFe1-xOOH Nanoparticles Derived from the 57Fe- and 119Sn-Mössbauer Spectra.

Debye temperatures of α-SnxFe1-xOOH nanoparticles (x = 0, 0.05, 0.10, 0.15 and 0.20, abbreviated as Sn100x NPs) prepared by hydrothermal reaction were estimated with 57Fe- and 119Sn-Mössbauer spectra measured by varying the temperature from 20 to 300 K. Electrical properties were studied by solid-state impedance spectroscopy (SS-IS). Together, the charge-discharge capacity of Li- and Na-ion batteries containing Sn100x NPs as a cathode were evaluated. 57Fe-Mössbauer spectra of Sn10, Sn15, and Sn20 measured at 300 K showed only one doublet due to the superparamagnetic doublet, while the doublet decomposed into a sextet due to goethite at the temperature below 50 K for Sn 10, 200 K for Sn15, and 100 K for Sn20. These results suggest that Sn10, Sn15 and Sn20 had smaller particles than Sn0. On the other hand, 20 K 119Sn-Mössbauer spectra of Sn15 were composed of a paramagnetic doublet with an isomer shift (δ) of 0.24 mm s-1 and quadrupole splitting (∆) of 3.52 mm s-1. These values were larger than those of Sn10 (δ: 0.08 mm s-1, ∆: 0.00 mm s-1) and Sn20 (δ: 0.10 mm s-1, ∆: 0.00 mm s-1), suggesting that the SnIV-O chemical bond is shorter and the distortion of octahedral SnO6 is larger in Sn15 than in Sn10 and Sn20 due to the increase in the covalency and polarization of the SnIV-O chemical bond. Debye temperatures determined from 57Fe-Mössbauer spectra measured at the low temperature were 210 K, 228 K, and 250 K for Sn10, Sn15, and Sn20, while that of α-Fe2O3 was 324 K. Similarly, the Debye temperature of 199, 251, and 269 K for Sn10, Sn15, and Sn20 were estimated from the temperature-dependent 119Sn-Mössbauer spectra, which were significantly smaller than that of BaSnO3 (=658 K) and SnO2 (=382 K). These results suggest that Fe and Sn are a weakly bound lattice in goethite NPs with low crystallinity. Modification of NPs and addition of Sn has a positive effect, resulting in an increase in DC conductivity of almost 5 orders of magnitude, from a σDC value of 9.37 × 10-7 (Ω cm)-1 for pure goethite Sn (Sn0) up to DC plateau for samples containing 0.15 and 0.20 Sn (Sn15 and Sn20) with a DC value of ~4 × 10-7 (Ω cm)-1 @423 K. This non-linear conductivity pattern and levelling at a higher Sn content suggests that structural modifications have a notable impact on electron transport, which is primarily governed by the thermally activated via three-dimensional hopping of small polarons (SPH). Measurements of SIB performance, including the Sn100x cathode under a current density of 50 mA g-1, showed initial capacities of 81 and 85 mAh g-1 for Sn0 and Sn15, which were larger than the others. The large initial capacities were measured at a current density of 5 mA g-1 found at 170 and 182 mAh g-1 for Sn15 and Sn20, respectively. It is concluded that tin-goethite NPs are an excellent material for a secondary battery cathode and that Sn15 is the best cathode among the studied Sn100x NPs.

Elaboration of La (Sr/Na) Mn (Ti) O3 ceramic, structural, and morphological investigations, and contribution of direct and indirect interactions on transport properties

The charge carrier's dynamics of La0.7(Sr5/6Na1/6)0.3Mn0.7Ti0.3O3 (LSNMTO) ceramic is conducted using the temperature and frequency dependences of the electrical conductivity and their scaling formalisms. The structural study indicates that LSNMTO crystallizes in a rhombohedral R3‾c perovskite structure with no detectible secondary phases. A phase transition from the high-temperature metallic behavior to the low-temperature semiconductor nature is observed from the electrical conductivity curve at TS-M = 415 K. Further, it is observed that the cation-anion-cation and the cation-cation interactions are present in the material, and play important role in governing the electrical behaviors of LSNMTO. From 200 K to 415 K, the Non-adiabatic Small Polaron Hopping is the predominant conduction process, although the Mott-Variable Range Hopping mechanism governs the conductivity at low temperatures. In the intermediate temperature range, the dynamic of the charge carriers is explained using the Shklovskii Efros model. The frequency-activated conductivity obeyed the universal laws (double-Jonscher and Jonscher laws). At high frequencies, the dispersion of the conductivity spectra is attributed to the presence of hopping and tunneling conduction processes. The Time-Temperature Superposition Principle (TTSP) is obeyed over a large temperature range from 160 K to 350 K. Below 160 K, the deviation from the TTSP is attributed to the coexistence of hopping and tunneling conduction mechanisms. Deviations from the Summerfield scaling and shifts of the isotherms to higher values on decreasing the temperature are due to the local structural disorder in LSNMTO. Therefore, the structural particularities of LSNMTO can result in diverse conduction pathways giving an increase to the deviations from the Summerfield scaling. The studied ceramic exhibits a very motivating maximum negative temperature coefficient of resistance NTCR = −13.36% which is significantly elevated as compared to previously investigated compounds.

Resistive Avalanches in La1-xSrxCoO3-δ (x = 0, 0.3) Thin Films and Their Reversible Evolution by Tuning Lattice Oxygen Vacancies (δ).

Strong correlations are often manifested by exotic electronic phases and phase transitions. LaCoO3-δ (LCO) is a system that exhibits such strong electronic correlations with lattice-spin-charge-orbital degrees of freedom. Here, we show that mesoscopic oxygen-deficient LCO films show resistive avalanches of about 2 orders of magnitude due to the metal-insulator transition (MIT) of the film at about 372 K for the 25 W RF power-deposited LCO film on the Si/SiO2 substrate. In bulk, this transition is otherwise gradual and occurs over a very large temperature range. In thin films of LCO, the oxygen deficiency (0 < δ < 0.5) is more easily reversibly tuned, resulting in avalanches. The avalanches disappear after vacuum annealing, and the films behave like normal insulators (δ ∼0.5) with Co2+ in charge ordering alternatively with Co3+. This oxidation state change induces spin state crossovers that result in a spin blockade in the insulating phase, while the conductivity arises from hole hopping among the allowed cobalt Co4+ ion spin states at high temperature. The chemical pressure (strain) of 30% Sr2+ doping at the La3+ site results in reduction in the avalanche magnitude as well as their retention in subsequent heating cycles. The charge nonstoichiometry arising due to Sr2+ doping is found to contribute toward hole doping (i.e., Co3+ oxidation to Co4+) and thereby the retention of the hole percolation pathway. This is also manifested in energies of crossover from the 3D variable range hopping (VRH) type transport observed in the temperature range of 300-425 K, while small polaron hopping (SPH) is observed in the temperature range of 600-725 K for LCO. On the other hand, Sr-doped LCO does not show any crossover and only the VRH type of transport. The strain due to Sr2+ doping refrains the lattice from complete conversion of δ going to 0.5, retaining the avalanches.

Dynamical study of the spin Hall effect from interchain polaron hopping in organics

Dynamical study of the spin Hall effect from interchain polaron hopping in organics

The Role of Water Molecules on Polaron Behavior at Rutile (110) Surface: A Constrained Density Functional Theory Study.

Understanding the behavior of a polaron in contact with water is of significant importance for many photocatalytic applications. We investigated the influence of water on the localization and transport properties of polarons at the rutile (110) surface by constrained density functional theory. An excess electron at a dry surface favors the formation of a small polaron at the subsurface Ti site, with a preferred transport direction along the [001] axis. As the surface is covered by water, the preferred spatial localization of the polarons is moved from the subsurface to the surface. When the water coverage exceeds half a monolayer, the preferred direction of polaron hopping is changed to the [110] direction toward the surface. This characteristic behavior is related to the Ti3d-orbital occupations and crystal field splitting induced by different distorted structures under water coverage. Our work describes the reduced sites that might eventually play a role in photocatalysis for rutile (110) surfaces in a water environment.

Effect of Zn doping on optical properties and electrical conductivity-mechanism of Sb-Ge-Se chalcogenide glassy systems

The present communication inspects the impact of zinc doping on the s optical, and electrical characteristics of bulk glassy samples made up of xZn-(0.1-x)Sb-0.2Ge-0.7Se (x = 0.01, 0.02, 0.03, 0.05). The X-ray diffraction patterns confirm that the samples are amorphous. In addition to various optical constants, the linear refractive index, and skin depth have been determined. The decreases in band gap energy values from 1.62 eV to 1.56 eV may be attributed to the rise in Unbach energy values from 0.15 eV to 0.32 eV. The obtained value of refractive indices also increases from 2.91 to 2.95 with the rising Zn content. By using the paradigm of Jonscher's universal power law and the Almond-West formalism, the underlying mechanisms of AC conductivity have been investigated. The AC conductivity increases with temperature and displays semiconducting characteristics. As the power-law exponent (s) reduces with increasing temperature, the correlated barrier hopping model is used to explain the AC conduction mechanism. DC conduction mechanism is described by Mott's and Greaves's variable range hopping model. The anticipated values of tiny polaron hopping energy (Whop) and hopping distance (Rhop) shed light on the increasing trend of DC conductivity with increased Zn concentration.

Effect of MnO2 addition on structure, electrical and optical properties of Ba(Fe0.5Nb0.5)O3 ceramics

Admixture of Ba(Fe0.5Nb0.5)O3 (BFN) ceramics with different content of MnO2 (0, 0.5, 1.0, 1.5 and 2.0 wt.%) powder were processed through conventional solid-state reaction route. The XRD characterization of all sintered samples confirmed the formation of a single cubic perovskite structure.MnO2 acts as sintering aid, which significantly enhances grain size of the BFN ceramics. The room temperature dielectric constant and conductivity of the MnO2 modified BFN ceramics were suppressed compared to the pure BFN ceramics. However, the dielectric constant increases with the increase in temperature above 250 ?C. The relaxation activation energy (&gt;0.6 eV) and high dielectric constant (?104 at temperature above 250 ?C) of the MnO2 modified BFN ceramics were explained on the basis of ionization of oxygen vacancies, mobile oxygen vacancies and polaron hopping between multiple oxidation states of manganese (Mn2+ and Mn3+). A narrow band gap of 1.45 eV was observed in the 1.5 wt.% MnO2 modified BFN ceramics.

Investigation of the structural, magnetic, and electrical characteristics of the La0.7Sr0.25Na0.05Mn0.8Ti0.2O3.

This article reveals the crucial structural, magnetic, and electrical properties of La0.7Sr0.25Na0.05Mn0.8Ti0.2O3 (LSNMTO) manganite, highlighting the significance of this material in the field of materials science. Gain a deeper understanding of the promising properties of LSNMTO and its potential for technological advancement by delving into this informative article. The X-ray diffraction data of the LSNMTO indicate that this ceramic solid solution crystallizes in the R3̄c rhombohedral structure. The magnetic results confidently demonstrate that the LSNMTO ceramic undergoes a transition from paramagnetic to ferromagnetic phases around 125 K. This significant finding could pave the way for further progress in the field of materials science. The DC conductivity response confirms the semiconductor nature of the elaborated compound over the studied temperature domain. Such behavior is linked to the contribution of the small polaron hopping mechanism at elevated temperatures and the Shklovskii Efros variable range hopping process at low temperatures. In the limit of the AC regime, the temperature-dependent AC conductivity confirms the appearance of a metal-semiconductor behavior at T M-S = 120 K that confirms the strong correlations between the transport and the magnetic properties of the sample. Over the explored temperature domain, the conductivity spectra follow a power law-like behavior. The scaled conductivity curve of LSNMTO is not superimposed on the particle grains' restricted reaction area. The Summerfield scaling of the electrical conductivity confirms with confidence the significant contribution of carrier concentration to the overall conduction of the material.

Exploring dielectric and AC conduction characteristics in elemental selenium glass modified with silver halides.

In this research work, we have examined the influence of silver halide doping on the dielectric dispersion and AC conduction of elemental selenium. The in-depth investigation shows that when the dopant silver halides are incorporated, there are noticeable changes in the parent selenium's dielectric constant (ε'), dielectric loss (ε''), and AC conductivity (σ ac). When we frame the discussion of the obtained results with the relevant transport models, we found that in pure selenium and Se95(AgI)5, conduction is primarily due to polaron hopping and follows the correlated barrier hopping (CBH) model. In contrast, Se95(AgBr)5 predominantly exhibits non-overlapping small polaron tunneling (NSPT). Interestingly, Se95(AgCl)5 demonstrates both NSPT and CBH conduction mechanisms, depending on the temperature range: NSPT is dominant between 303 K and 313 K, while CBH prevails from 318 K to 338 K. Additionally, our findings revealed the presence of both the Meyer-Neldel rule (MNR) and its reverse in the prepared silver halide chalcogenide alloys. The best optimization of dielectric constant and loss is observed for silver iodide as compared to silver chloride and silver bromide. Comparison with other silver-containing chalcogenide glasses indicates the better dielectric performance of the present silver halides containing selenium.

Investigation of conduction mechanisms and permittivity-conductivity correlation in a Gd-based perovskite structure.

Currently, the development of perovskites has required a lot of attention for fundamental investigation and electronic devices. The present study reported the electrical conductivity and the dielectric properties of a GdCa2Cu3Oδ (GdCaCuO) system prepared via the solid-state reaction method. The X-ray diffraction results indicate that GdCaCuO crystallizes in the tetragonal perovskite structure. The studied compound reveals elevated dielectric permittivity and significant electrical phenomena including the influence of multiple conduction and relaxation mechanisms on the transport of charges. From the impedance results, it is observed that the electrical and dielectric properties of the studied compound are governed by the contribution of the grain and the grain boundary regions. The Nyquist results and the blocking factor (αR) were used to confirm the aforementioned properties. From the modulus results, we confirm again the presence of multiple relaxation processes and various types of polarization effects. The semiconductor character of the GdCaCuO ceramic is due to the activation of hopping conduction processes within the DC regime. Consequently, both the variable range hopping and the small polaron hopping models are used at low- and high-temperature ranges, respectively. At various temperatures, the conductivity spectra of the GdCaCuO ceramic conform to the double Jonscher power law. The power law behavior is attributed to the activation of hopping and tunneling conduction mechanisms. The presence of large dielectric dispersion in GdCaCuO is observed at low temperatures and decreases rapidly against increasing temperatures.