Homoepitaxial Films Research Articles

200 cm2/Vs electron mobility and controlled low 1015 cm−3 Si doping in (010) β -Ga2O3 epitaxial drift layers

We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 μm thick β-Ga2O3 films with electron concentrations in the 1015 cm−3 range and record-high room temperature Hall electron mobilities of up to 200 cm2/Vs, reaching the predicted theoretical maximum room temperature phonon scattering-limited mobility value for β-Ga2O3. Growth of the homoepitaxial films was performed on Fe-doped (010) β-Ga2O3 substrates at a growth rate of 1.9 μm/h using TEGa as the Gallium precursor. To probe the background electron concentration, an unintentionally doped film was grown with a Hall concentration of 3.43 × 1015 cm−3 and Hall mobility of 196 cm2/Vs. Growth of intentionally Si-doped films was accomplished by fixing all growth conditions and varying only the silane flow, with controllable Hall electron concentrations ranging from 4.38 × 1015 to 8.30 × 1015 cm−3 and exceptional Hall mobilities ranging from 194 to 200 cm2/Vs demonstrated. C-V measurements showed a flat charge profile with the ND+–NA− values correlating well with the Hall-measured electron concentration in the films. SIMS measurements showed the silicon atomic concentration matched the Hall electron concentration with carbon and hydrogen below detection limit in the films. The Hall, C-V, and SIMS data indicate the growth of high-quality 4.5 μm thick β-Ga2O3 films and controllable doping into the mid 1015 cm−3 range. These results demonstrate MOCVD growth of electronics grade record-high mobility, low carrier density, and thick β-Ga2O3 drift layers for next-generation vertical β-Ga2O3 power devices.

Transport and electronic structure properties of MBE grown Sn doped Ga2O3 homo-epitaxial films

In this work, we report the transport, defect state and electronic structure properties of unintentionally doped (UID) and Sn doped β-Ga2O3 homo-epitaxial thin films grown by molecular beam epitaxy (MBE) with electron density ranging from 2.1 × 1016 to 2.8 × 1019 cm−3. The UID film with an electron density of 2.1 × 1016 cm−3 exhibits a notable RT mobility of 129 cm2/Vs and a peak mobility of 900 cm2/Vs at 80 K, achieving the state-of-the-art level for MBE-grown Ga2O3 films. Temperature dependent Hall measurement reveal that Sn dopants have an activation energy of 56.7 meV. Synchrotron-based photoemission spectroscopy were further used to study insights into the evolution of electronic properties induced by Sn doping. An in-gap defect state was observed at the 1.5 eV above the valence band maximum for the Sn-doped Ga2O3 film. The in-gap state acts as self-compensating centers affecting the overall doping efficiency and mobility. Furthermore, photoemission spectroscopic study also reveals an upward surface band bending existing at the surface region of Sn doped Ga2O3 films. The identification of the in-gap state and surface upward band bending have significant implications for understanding the doping mechanisms in Ga2O3 and its electronic device applications.

TEM investigation of the interface formation during transfer of 3C-SiC(001) layer onto 6H-SiC(0001) wafer

At present, intensive research is underway in the field of vacuum-sublimation growth of 3C-SiC. Transfer of a thin (001)3C-SiC layer onto a 6H-SiC wafer is a promising way to fabricate a 3C-SiC/6H-SiC substrate for growing device-quality homoepitaxial films of low defect density. The article presents the results of the structural characterization of an interface formed during the transfer of a 3C-SiC layer onto a 6H-SiC(0001) wafer, performed with transmission electron microscopy (TEM). A 3C-SiC film with a thickness of about 10 μm, grown by chemical vapor deposition (CVD) on a Si(001) substrate, was utilized in the study. Silicon acted as a bonding material in the transfer process. The morphology and microstructure of the interface between a 6H-SiC substrate and a 3C-SiC (001)-oriented layer are under consideration. TEM investigation reveals an effect of “self”-orientation of the layer with respect to the wafer during the transfer process: an interaction between the molten silicon layer and silicon carbide throughout crystallization results in the generation of defined orientation relationships with respect to substrate axes. An analysis of selected area electron diffraction patterns taken from interfaces showed the relationships to be 3C-SiC{001}‖ 6H-SiC(0001) and 3C-SiC⟨11¯0⟩∼‖ 6H-SiC⟨112¯0⟩.

Self-powered Schottky barrier photodetector with high responsivity based on homoepitaxial Ga2O3 films by MOCVD

Abstract Ga2O3 is a fast-developing wide band semiconductor for solar-blind ultraviolet (SBUV) photodetectors (PDs) applications. The heterojunction self-powered PDs fabricated from heteroepitaxial Ga2O3 films currently have low responsivity and response speed. In this work, we fabricated Schottky barrier PDs based on homoepitaxially grown high quality Ga2O3 films, which show high performance manifested in high responsivity at different bias voltages. In particular, the device achieves a responsivity of 90.3 mA/W, a photo-to-dark current ratio of 3.2×104 and a detectivity of 3.8×1013 Jones at 0 V. In addition, a response time of superior to 5 ms is achieved. The results demonstrate the advantages of homoepitaxial Ga2O3 films in the field of high-performance devices.

Polarity of homoepitaxial ZnO films grown by Nd:YAG pulsed laser deposition

We investigate the stability of the polar surface of ZnO films grown homoepitaxially on atomically flat ZnO (0001¯) O-face substrates by neodymium yttrium aluminum garnet (Nd:YAG) pulsed laser deposition (PLD). For films grown in the temperature range from 500 to 700 °C, ion scattering spectroscopy showed that the film surface termination was the same as the ZnO substrate. Even for a Mg0.2Zn0.8O/ZnO superlattice, no polarity reversal occurred, indicating that the ZnO (0001¯) O-face is highly stable, despite the film surface sputtering caused by the high kinetic energy of the PLD plume generated by the Nd:YAG laser.

Versatile stochastic model for predictive KMC simulation of fcc metal nanostructure evolution with realistic kinetics.

Stochastic lattice-gas models provide the natural framework for analysis of the surface diffusion-mediated evolution of crystalline metal nanostructures on the appropriate time scale (often 101-104s) and length scale. Model behavior can be precisely assessed by kinetic Monte Carlo simulation, typically incorporating a rejection-free algorithm to efficiently handle the broad range of Arrhenius rates for hopping of surface atoms. The model should realistically prescribe these rates, or the associated barriers, for a diversity of local surface environments. However, commonly used generic choices for barriers fail, even qualitatively, to simultaneously describe diffusion for different low-index facets, for terrace vs step edge diffusion, etc. We introduce an alternative Unconventional Interaction-Conventional Interaction formalism to prescribe these barriers, which, even with few parameters, can realistically capture most aspects of behavior. The model is illustrated for single-component fcc metal systems, mainly for the case of Ag. It is quite versatile and can be applied to describe both the post-deposition evolution of 2D nanostructures in homoepitaxial thin films (e.g., reshaping and coalescence of 2D islands) and the post-synthesis evolution of 3D nanocrystals (e.g., reshaping of nanocrystals synthesized with various faceted non-equilibrium shapes back to 3D equilibrium Wulff shapes).

High quality heavy Sn doping β‑Ga2O3 film with high mobility grown by time division transport Metal Organic Chemical Vapor Deposition

High-quality heavily Sn doped homoepitaxial β-Ga2O3 films with high mobility were deposited on (100) Ga2O3 substrates using long-distance time division transport method by Metal Organic Chemical Vapor Deposition. The structure, composition, Raman, and electrical properties of the films with different Sn source flow rates were investigated in detail. The room temperature carrier mobility of 139.89 cm2/(V·s) is attained at a RT donor concentration of 2.78×1019 cm-3, with a peak mobility of 444.9 cm2/(V·s) at 114 K. This RT mobility is currently the highest at the same doping concentration level. Furthermore, combined with the analysis of the first-principles calculation results, it is revealed that time dependent transport technology is beneficial to modulating the substitution mode of Sn replacing GaII more often. The conclusions of this study are significant to broaden the potential application of ultrawide bandgap gallium oxide in high-power microwave and power electronics devices.

High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes

We report on the growth of Si-doped homoepitaxial β-Ga2O3 thin films on (010) Ga2O3 substrates via metal-organic chemical vapor deposition (MOCVD) utilizing triethylgallium (TEGa) and trimethylgallium (TMGa) precursors. The epitaxial growth achieved an impressive 9.5 μm thickness at 3 μm/h using TMGa, a significant advance in material growth for electronic device fabrication. This paper systematically studies the Schottky barrier diodes fabricated on the three MOCVD-grown films, each exhibiting variations in the epilayer thickness, doping levels, and growth rates. The diode from the 2 μm thick Ga2O3 epilayer with TEGa precursor demonstrates promising forward current densities, the lowest specific on-resistance, and the lowest ideality factor, endorsing TEGa’s potential for MOCVD growth. Conversely, the diode from the 9.5 μm thick Ga2O3 layer with TMGa precursor exhibits excellent characteristics in terms of lowest leakage current, highest on-off ratio, and highest reverse breakdown voltage of −510 V without any electric field management, emphasizing TMGa’s suitability for achieving high growth rates in Ga2O3 epilayers for vertical power electronic devices.

Enhancement-mode Ga2O3 FETs with an unintentionally doped (001) β-Ga2O3 channel layer grown by metal-organic chemical vapor deposition

High-quality unintentionally doped (UID) (001) β-Ga2O3 homoepitaxial films were grown on native substrates through metalorganic CVD. The surface parallel grooves were repaired under low temperature and pressure conditions, reaching the surface roughness of 2.22 nm and the high electron mobility of 74.6 cm2/Vs. Enhancement-mode MOSFETs were fabricated on the UID β-Ga2O3 film, showing a positive turn-on threshold gate voltage of 4.2 V and a breakdown voltage of 673 V. These results can serve as a reference for (001)-oriented lateral Ga2O3 power transistors and may contribute to the development of Ga2O3 power devices.

Elucidating Twinning Mechanisms in CdTe Homoepitaxial Film Growth from Machine Learning Force Field Molecular Dynamics Simulations

Elucidating Twinning Mechanisms in CdTe Homoepitaxial Film Growth from Machine Learning Force Field Molecular Dynamics Simulations

Dielectric properties of low-temperature-grown homoepitaxial (−201) β-Ga2O3 thin film by atmospheric pressure plasma-assisted CVD

The atmospheric pressure plasma-assisted chemical vapor deposition technique has successfully demonstrated unintentionally doped (UID) Ga2O3 growth at 350 °C. This technique allows independent and homogeneous multiple nuclei growth of Ga2O3, leading to three-dimensional grain growth at a rate of ⁓0.17 μm/h. In the study of Schottky barrier diodes, the Schottky-like current (I)–voltage (V) response shows typical behavior on Ga2O3. This is a good sign at an early stage of device development on the grown sample. The extracted barrier height of ⁓2.20 eV was higher, which may be due to unintentional PtOx formation on the Ga2O3 surface. Furthermore, the extracted capacitance (C)–voltage (V) depth profiling of the effective impurity concentration was nearly flat, ⁓1.5 × 1017 cm−3, in the unintentionally doped grown film. The effective impurity concentration is comparable to the UID carrier concentration of epitaxial films fabricated using the high temperature growth technique. Therefore, low-temperature-grown homoepitaxial Ga2O3 thin films grown by atmospheric pressure-plasma-assisted chemical vapor deposition can be used in future Ga2O3-based power device applications.

Characterization and formation mechanism of short step-bunching defects on 4H-SiC thick homoepitaxial films

Short Step-Bunching (SSB) are a kind of linear defects consisting of convex and concave undulations on the surface of 4H-SiC homoepitaxial layer. In this work, we report the characterizations of SSBs on 12 μm, 50 μm and 85 μm thick SiC epilayers by using optical microscopy (OM), micro-photoluminescence spectra (PL), atomic force microscopy (AFM), chemical mechanical polishing (CMP), molten KOH etching (10 min, 500 ℃) and high resolution transmission electron microscope (HRTEM). It is found that these SSBs are 200 ∼ 250 μm long, perpendicular to the step-flow [11–20] direction, leading to local rugged surfaces of epilayer. No other poly-types are identified on and around these SSBs. H2 etching the substrate reveals the existence of short-line defects on the substrate with one or more dislocations (TSD or TED) or an amorphous bump locating in center of most of them. Presumably, the amorphous bump was a kind of carbon inclusion. Based on the above results, we proposed that the SSBs develop from the short-line defects generated when etching the substrates prior to epilayer growth. Elimination of short-line defects by proper etching process is an effective route to reducing the SSBs in 4H-SiC homoepitaxial layers.

Homoepitaxial growth of CaWO4

Rare-earth ion-doped dielectric crystals are a promising materials platform for quantum device applications due to their stable and highly coherent optical transitions. Recently, REIs in thin film form have become attractive because of their enhanced control of stoichiometry, lattice structure, and dimensionality. This flexibility provides a versatile host crystal environment. Control of surface and interface structures of host crystals at the atomic scale offers an avenue to further improve the optical properties of the system by mitigating defects, which can otherwise compromise the coherence time of quantum devices. In this work, we have investigated the impact of thermal annealing on the surface morphology of a promising host crystal, CaWO4. Our findings reveal that crystal miscut plays a significant role in determining the surface step-terrace structure at the atomic level. Additionally, by iterating an annealing-wet etch cycle, we have achieved atomically flat surfaces with a roughness of less than 0.5 Å rms over a 1 × 1 μm2 area. Homoepitaxial thin film growth using molecular beam epitaxy on an atomically flat surface of CaWO4 results in high-quality thin films. Our study establishes guiding principles to realize a novel quantum optical system based on REI-doped CaWO4 thin films.

Compliant substrate epitaxial MgZnO films using fluorphlogopite mica approaching homoepitaxy quality

Based on the success of high-quality epitaxial grown ZnO film on the compliant Fluorphlogopite Mica (F-Mica) substrate, the growth of MgZnO films on F-Mica substrate is studied to promote the development of flexible ZnO quantum well structures and devices. These flexible epitaxial MgZnO films show high luminous quality approaching homoepitaxial films. The phenomenon of Mg compositional fluctuations is confirmed by the research on band tail state. The effect of the compositional fluctuations on epitaxial growth dynamical and thermodynamic processes is also revealed by the comprehensively investigation of the crystal quality, optical properties, morphology, and growth rate. The study provides guidance for energy band engineering of ZnO on flexible substrates, and lays the foundation for the bendable optoelectronic devices on F-Mica substrate.

Silicon implantation and annealing in β-Ga2O3: Role of ambient, temperature, and time

Optimizing thermal anneals of Si-implanted β-Ga2O3 is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature, and time on the activation of room temperature ion-implanted Si in β-Ga2O3 at concentrations from 5 × 1018 to 1 × 1020 cm−3, demonstrating full activation (>80% activation, mobilities >70 cm2/V s) with contact resistances below 0.29 Ω mm. Homoepitaxial β-Ga2O3 films, grown by plasma-assisted molecular beam epitaxy on Fe-doped (010) substrates, were implanted at multiple energies to yield 100 nm box profiles of 5 × 1018, 5 × 1019, and 1 × 1020 cm−3. Anneals were performed in an ultra-high vacuum-compatible quartz furnace at 1 bar with well-controlled gas compositions. To maintain β-Ga2O3 stability, pO2 must be greater than 10−9 bar. Anneals up to pO2 = 1 bar achieve full activation at 5 × 1018 cm−3, while 5 × 1019 cm−3 must be annealed with pO2 ≤ 10−4 bar, and 1 × 1020 cm−3 requires pO2 < 10−6 bar. Water vapor prevents activation and must be maintained below 10−8 bar. Activation is achieved for anneal temperatures as low as 850 °C with mobility increasing with anneal temperatures up to 1050 °C, though Si diffusion has been reported above 950 °C. At 950 °C, activation is maximized between 5 and 20 min with longer times resulting in decreased carrier activation (over-annealing). This over-annealing is significant for concentrations above 5 × 1019 cm−3 and occurs rapidly at 1 × 1020 cm−3. Rutherford backscattering spectrometry (channeling) suggests that damage recovery is seeded from remnant aligned β-Ga2O3 that remains after implantation; this conclusion is also supported by scanning transmission electron microscopy showing retention of the β-phase with inclusions that resemble the γ-phase.

(Invited) Better GaN Substrates Are the Key to Advancing GaN Device Technology

Gallium nitride (GaN) is a semiconductor that has an unusual combination of extreme values of fundamental physical and chemical properties. Its wide bandgap (3.4 eV at room temperature) results in a low intrinsic carrier density and thus low leakage and dark currents. These properties combined with its direct gap are crucial requirements for photo-detectors and high-temperature electronic applications. Despite the relatively large carrier effective masses, which lead to lower carrier mobilities, the high electron saturation velocity and high breakdown field make possible the fabrication of high frequency electronic devices. In addition, its relatively high thermal conductivity opens the possibility to realize a number of high-power device applications. These unique characteristics have made possible the fabrication of a variety of optoelectronic and electronic devices capable of performing at extreme operation conditions of current, voltage, temperature, and in harsh environments. GaN and its alloys and heterostructures with InN and AlN have resulted in devices with superior performance for a variety of applications. Despite this unprecedented and not fully developed semiconductor materials success, the realization of high-performance and high-yield devices will require native GaN substrates with well-controlled physical properties.Presently, Hydride Vapor Phase Epitaxy (HVPE) and Ammonothermal (Ammono-GaN) bulk growth are the only two methods that have successfully demonstrated the manufacture of GaN boules. The first, a fast-growth non-equilibrium process, only reproduces the starting substrate dimensions, while the latter, a slow-growth equilibrium process, allows increasing boule dimensions under controlled growth conditions. Despite the impressive accomplishments recently achieved by these growth methods, much work still needs to be done to establish a fully satisfactory bulk growth method for this material. Heteroepitaxial HVPE-GaN suffers from high dislocation densities, while Ammono-GaN suffers from high oxygen incorporation. Recent results suggest that Ammono-GaN wafers can be successfully used as seeds to grow thick freestanding GaN wafers by HVPE [1]. This approach resulted on HVPE-GaN wafers with orders of magnitude reduced extended defect and lower oxygen impurity concentrations. However, the relatively high background concentration of pervasive impurities is still preventing the realization of high performance devices. In this work, we illustrate how defect-sensitive optical techniques can be used to assist the optimization procedures at various stages of growth [2]. A brief review of defect-sensitive optical spectroscopic techniques employed to evaluate structural, optical, and electronic properties of the state-of-the-art bulk and thick-film (quasi-bulk) Nitride substrates and homoepitaxial films is presented. Defects control the performance of devices and feeding back knowledge of defects to growth efforts is key to advancing technology.References J. A. Freitas, Jr., J.C. Culbertson, N.A. Mahadik, T. Sochacki, M. Iwinska, and M.S. Bockowski, J. Crystal Growth 456 (2016) 113.J. A. Freitas, Jr., J.C. Culbertson, and E. R. Glaser, Crystals, 12 (2022) 1294.

High-Temperature Ferroic Glassy States in SrTiO_{3}-Based Thin Films.

Disordered ferroics hold great promise for next-generation magnetoelectric devices because their lack of symmetry constraints implies negligible hysteresis with low energy costs. However, the transition temperature and the magnitude of polarization and magnetization are still too low to meet application requirements. Here, taking the prototype perovskite of SrTiO_{3} as an instance, we realize a coexisting spin and dipole reentrant glass states in SrTiO_{3} homoepitaxial films via manipulation of local symmetry. Room-temperature saturation magnetization and spontaneous polarization reach ∼ 10 emu/cm^{3} and ∼ 25 μC/cm^{2}, respectively, with high transition temperatures (101K and 236K for spin and dipole glass temperatures and 556K and 1100K for Curie temperatures, respectively). Our atomic-scale investigation points out an underlying mechanism, where the Ti/O-defective unit cells break the local translational and orbital symmetry to drive the formation of unusual slush states. This study advances our understanding of the nature of the intricate couplings of ferroic glasses. Our approach could be applied to numerous perovskite oxides for the simultaneous control of the local magnetic and polar orderings and for the exploration of the underlying physics.

Exploring miscut angle influence on (100) β-Ga2O3 homoepitaxial films growth: Comparing MOVPE growth with MBE approaches

In this work, we explored the growth regime of (100) β-Ga2O3 homoepitaxial films on substrates with different miscut angles (1°, 2°, and 4°) in the MOVPE system. Under a low O2/Ga ratio growth condition, step-flow growth of (100) β-Ga2O3 homoepitaxial films can be maintained up to 3 μm on substrates with different miscut angles. Moreover, the results reveal that the growth rate decreases slightly with decreasing miscut angles, which matches estimation of the Burton–Cabrera–Frank theory and can be explained by the model of adsorption–desorption. By comparing the miscut-dependent growth rates, we give experimental evidence on the fundamental difference between the growth of (100) β-Ga2O3 films by MOVPE and MBE. In addition, a transport model is proposed to explain the desorption process in terms of the boundary layer and the kinetic resistance.

Multiple-Layer Triangular Defects in 4H-SiC Homoepitaxial Films Grown by Chemical Vapor Deposition

In this study, a special triangular defect (TD) was identified on 4H-SiC epitaxial wafers. The morphology and composition characteristics of these special TDs were revealed by Raman, atomic force microscope (AFM), and scanning electron microscope (SEM). Compared to ordinary triangular defects, this defect protruded from the epitaxial layer and exhibited a laminated shape. The study also discussed the effects of several factors, such as C/Si ratio and growth time, on the triangular defects. Through analysis of these results, we developed methods to suppress the triangular defects. This research provides new insights into the morphology, structure, and composition of this serious destructive defect and is helpful for improving the performance of SiC epitaxial wafers.

Self-powered Schottky barrier photodiodes based on homoepitaxial Ga2O3 film

In this paper, we reported vertical self-powered Schottky barrier photodiode based on MOCVD homoepitaxial Ga2O3 film. Attributed to the high quality homoepitaxial Ga2O3 film, the device achieved a photo-to-dark current ratio of over 1 × 103, a responsivity of 0.59 A/W and a detectivity of 1.3 × 1013 Jones at 0 V under 10 μW/cm2 254 nm UV illumination. Meanwhile, the device obtained ultra-fast response with relaxation times superior to 10 ms. The comprehensive performance of the device exceeds that of most current self-powered photodetectors based on heteroepitaxial Ga2O3 film, demonstrating the potential of vertical Ga2O3 devices for photodetection.