Abstract
High-quality heavily Sn doped homoepitaxial β-Ga2O3 films with high mobility were deposited on (100) Ga2O3 substrates using long-distance time division transport method by Metal Organic Chemical Vapor Deposition. The structure, composition, Raman, and electrical properties of the films with different Sn source flow rates were investigated in detail. The room temperature carrier mobility of 139.89 cm2/(V·s) is attained at a RT donor concentration of 2.78×1019 cm-3, with a peak mobility of 444.9 cm2/(V·s) at 114 K. This RT mobility is currently the highest at the same doping concentration level. Furthermore, combined with the analysis of the first-principles calculation results, it is revealed that time dependent transport technology is beneficial to modulating the substitution mode of Sn replacing GaII more often. The conclusions of this study are significant to broaden the potential application of ultrawide bandgap gallium oxide in high-power microwave and power electronics devices.
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