It is well known that the different proportions of CuO and Cu2O in CuOx hole transfer materials have a great influence on the hole transport property as well as the device performances of perovskite solar cells (PSCs). In this paper, we changed the content of Cu2O in the film by controlling the deposition voltage during electrodeposition, and the effects of different contents of Cu2O in the films on the device were investigated for the first time. It was found that the content of Cu2O in the film reached the highest point with the deposition voltage 0.5[Formula: see text]V, such films have the highest transmittance and carrier mobility. After assembling the device, the power conversion efficiency (PCE) of the champion device reached 13.48% under a one-sun AM 1.5[Formula: see text]G (100[Formula: see text]mW/cm[Formula: see text] illumination. Furthermore, the unpackaged device based on CuOx still retained over 75% PCE after being placed in the ambient condition (30–40% humidity, 20–30[Formula: see text] for 500[Formula: see text]h.