Hole Quantum Research Articles

Quantum hair and black hole information

It has been shown that the quantum state of the graviton field outside a black hole horizon carries information about the internal state of the hole. We explain how this allows unitary evaporation: the final radiation state is a complex superposition which depends linearly on the initial black hole state. Under time reversal, the radiation state evolves back to the original black hole quantum state. Formulations of the information paradox on a fixed semiclassical geometry describe only a small subset of the evaporation Hilbert space, and do not exclude overall unitarity.

On the quantum model of a charged black hole

We study the quantum states of the black hole model in the configuration space. To this end, we investigate the properties of the configuration space of the Einstein–Maxwell set of equations in the T-region. We limit ourselves to considering the T-region, where the fields under consideration have a dynamic meaning. Based on the standard action for the of Einstein–Maxwell set of equations, we construct the reduced action for the spherical symmetry case. Using the Hamiltonian constraint, we exclude the non-dynamic degree of freedom from the reduced action, thereby passing to the configuration space. In the new representation of the system, we study the induced dynamical system in the configuration space. It turns out that the induced supermetric is reduced to a quasi-Cartesian form. The laws of charge and mass conservation, which the system contains, together with the Hamilton constraint, completely determine thestate of the black hole. They allow one to find the momenta and the action of the system in terms of field variables and conserved quantities, as well as the trajectory of motion in the configuration space. The black hole quantization is reduced to the construction of the quantum states for the system with a fixed mass and charge in a three-dimensional pseudo-Euclidean configuration space The Hamilton constraint is associated with the DeWitt equation, the latter is constructed using the Laplace–Beltrami operator, which is Hermitian with respect to the natural measure. To construct a Hermitian mass operator, it suffices to restrict ourselves to partial derivatives with their corresponding ordering. For the physical states satisfying the DeWitt equation to be also eigenfunctions of the mass operator, the compatibility conditions must be satisfied. In this case, we arrive at the corresponding ansatz. Its substitution into the DeWitt equation leads to a self-consistent solution of the quantum DeWitt equation and equation for the eigenvalue of the mass operator. The constructed model describes the quantum states of a charged black hole in the configuration space with continuous mass and charge spectra.

Resonant nanocavity-enhanced graphene photodetectors on reflecting silicon-on-insulator wafers

The weak light absorption and zero-bandgap properties of two-dimensional graphene negatively affect electron–hole recombination and quantum yield, restricting its usefulness in practical optoelectronic applications. In this work, plasma-assisted chemical vapor deposition is used to synthesize three-dimensional graphene (3D-graphene) in situ on the surface of silicon-on-insulator (SOI) wafers, thereby creating high-performance broadband photodetectors. The nanocavity structure of the 3D-graphene integrates with the optical cavity structure of the SOI to enhance the interaction that occurs between the 3D-graphene and incident light. The resulting device has excellent performance in the near-infrared (NIR). The mechanism by which the light absorption of the photodetector is enhanced is explored in detail via experimental analysis and theoretical calculation. Photodetectors based on the 3D-graphene/SOI Schottky heterojunction exhibit a broad detection range (from 440 to 1550 nm), ultrahigh responsivity (27.4 A/W), and excellent detectivity (1.37 × 1011 Jones) at a wavelength of 1550 nm. The Schottky heterojunctions combine two structures (nanocavity and optical cavity) that enhance light absorption. They are also compatible with complementary metal-oxide-semiconductor technology, providing a strategy for manufacturing high-performance NIR photodetectors.

Influence of the spin-orbit split-off valence band on the hole g factor in semiconductor nanocrystals

We present results of $\mathbit{k}\ifmmode\cdot\else\textperiodcentered\fi{}\mathbit{p}$ calculations of the effective $g$ factor of holes confined in spherical, cube, and planar semiconductor nanocrystals (NCs). We use the six-band Luttinger model for semiconductors with the zinc-blende crystal structure and study the size dependence of the ${\mathrm{\ensuremath{\Gamma}}}_{8}$ top valence subband hole $g$ factor caused by the admixture of the spin-orbit split-off valence subband ${\mathrm{\ensuremath{\Gamma}}}_{7}$. We present semianalytical expressions for the hole $g$ factor which depends on the light- to heavy-hole effective mass ratio $\ensuremath{\beta}$ and on the ratio between spin-orbit energy splitting of valence band ${\mathrm{\ensuremath{\Delta}}}_{\text{SO}}$ and the hole quantization energy ${E}_{h}$. The admixture of ${\mathrm{\ensuremath{\Gamma}}}_{7}$ states is significant for small ${\mathrm{\ensuremath{\Delta}}}_{\text{SO}}/{E}_{h}$ and, in spherical and cube NCs, leads to a strong size dependence of the hole $g$ factor. In thin planar nanoplatelets (NPLs) with infinite or large lateral sizes, the dependence of the heavy-hole $g$ factor on NPL thickness is relatively weak. It is drastically enhanced and may become nonmonotonic in NPLs with finite in-plane sizes due to the additional hole states mixing. We discuss our results in comparison with published experimental data for CdSe- and InP-based spherical NCs and NPLs and point out the specificity of extracting hole $g$ factor from the data measured on excitons.

Toward Hole-Spin Qubits in Si p -MOSFETs within a Planar CMOS Foundry Technology

Hole spins in semiconductor quantum dots represent a viable route for the implementation of electrically controlled qubits. In particular, the qubit implementation based on $\mathrm{Si}$ $p$-MOSFETs offers great potentialities in terms of integration with the control electronics and long-term scalability. Moreover, the future down scaling of these devices will possibly improve the performance of both the classical (control) and quantum components of such monolithically integrated circuits. Here, we use a multiscale approach to simulate a hole-spin qubit in a down-scaled $\mathrm{Si}$-channel $p$-MOSFET, the structure of which is based on a commercial 22-nm fully depleted silicon-on-insulator device. Our calculations show the formation of well-defined hole quantum dots within the $\mathrm{Si}$ channel and the possibility of a general electrical control, with Rabi frequencies of the order of $100\phantom{\rule{0.2em}{0ex}}\mathrm{MHz}$ for realistic field values. A crucial role of the channel aspect ratio is also demonstrated, as well as the presence of a favorable parameter range for the qubit manipulation.

Gate-controlled quantum dots in monolayer WSe2

Quantum confinement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as well as the possibility to address their quantum states electrically and optically, makes two-dimensional (2D) transition metal dichalcogenides an emerging platform for the development of quantum devices. In this work, we fabricate devices based on heterostructures of layered 2D materials, in which we realize gate-controlled tungsten diselenide (WSe2) hole quantum dots. We discuss the observed mesoscopic transport features related to the emergence of quantum dots in the WSe2 device channel, and we compare them to a theoretical model.

Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode

AlGaN solar-blind ultraviolet (SBUV) detectors have potential application in fire monitoring, corona discharge monitoring, or biological imaging. With the promotion of application requirements, there is an urgent demand for developing a high-performance vertical detector that can work at low bias or even zero bias. In this work, we have introduced a photoconductive gain mechanism into a vertical AlGaN SBUV detector and successfully realized it in a p - i - n photodiode via inserting a multiple-quantum-well (MQW) into the depletion region. The MQW plays the role of trapping holes and increasing carrier lifetime due to its strong hole confinement effect and quantum confinement Stark effect. Hence, the electrons can go through the detector multiple times, inducing unipolar carrier transport multiplication. Experimentally, an AlGaN SBUV detector with a zero-bias peak responsivity of about 0.425 A/W at 233 nm is achieved, corresponding to an external quantum efficiency of 226%, indicating the existence of internal current gain. When compared with the device without MQW structure, the gain is estimated to be about 10 3 in magnitude. The investigation provides an alternative and effective approach to obtain high current gain in vertical AlGaN SBUV detectors at zero bias.

Acceleration radiation of an atom freely falling into a Kerr black hole and near-horizon conformal quantum mechanics

An atom falling freely into a Kerr black hole in a Boulware-like vacuum is shown to emit radiation with a Planck spectrum at the Hawking temperature. For a cloud of falling atoms with random initial times, the radiation is thermal. The existence of this radiation is due to the acceleration of the vacuum field modes with respect to the falling atom. Its properties can be traced to the dominant role of conformal quantum mechanics in the neighborhood of the event horizon. We display this effect for a scalar field, though the acceleration radiation has a universal conformal behavior that is exhibited by all fields in the background of generic black holes.

Hawking Radiation and Black Hole Gravitational Back Reaction—A Quantum Geometrodynamical Simplified Model

The purpose of this paper is to analyse the back reaction problem, between Hawking radiation and the black hole, in a simplified model for the black hole evaporation in the quantum geometrodynamics context. The idea is to transcribe the most important characteristics of the Wheeler-DeWitt equation into a Schrödinger’s type of equation. Subsequently, we consider Hawking radiation and black hole quantum states evolution under the influence of a potential that includes back reaction. Finally, entropy is estimated as a measure of the entanglement between the black hole and Hawking radiation states in this model.

(Invited) Quantum Dots and Superconductivity in Silicon Systems

Ge/Si core/shell nanowires are suitable candidates for electrically driven spin qubits, and for the creation of Majorana fermions [1]. In highly tuneable hole quantum dots [2, 3], we observe shell filling of new orbitals and corresponding Pauli spin blockade [4]. In nanowires with superconducting Al leads we create a Josephson junction via proximity-induced superconductivity. A gate-tuneable supercurrent is observed with a maximum of ~60 nA [5]. We identify two different regimes: Cooper pair tunnelling via multiple subbands in the open regime the device [6], while near depletion the supercurrent is carried by single-particle levels of a quantum dot operating in the few-hole regime [5,7,8].Secondly, we create ambipolar quantum dots in silicon nanoMOSFETs. We investigate the conformity of Al, Ti and Pd nanoscale gates by means of transmission electron microscopy [9]. We define low-disorder electron quantum dots with Pd gates [10], and depletion-mode hole quantum dots in undoped silicon [11]. For the latter we use fixed charge in a SiO2/Al2O3 dielectric stack to induce a 2DHG at the Si/SiO2 interface. The depletion-mode design avoids complex multilayer architectures requiring precision alignment and allows directly adopting best practices already developed for depletion dots in other material systems. Finally, we have realized ambipolar charge sensing: we have fabricated a single-electron transistor next to a single-hole transistor, and tuned both quantum dots to sense charge transitions of the other quantum dot. Using active charge sensing the single-electron transistor can detect the few-charge regime in the hole quantum dot [12].[1] C. Kloeffel et al., Phys. Rev. B 84, 195314 (2011). [2] M. Brauns et al., Applied Physics Letters 109, p. 143113 (2016). [3] F. Froning et al., Applied Physics Letters 113, p. 073102 (2018). [4] M. Brauns et al., Phys. Rev. B 94, 041441(R) (2016). [5] J. Ridderbos et al., Advanced Materials, 1802257, (2018). [6] J. Xiang et al., Nature Nanotechnology 1, 3 (2006). [7] J. Ridderbos et al., Physical Review Materials, 3, 084803 (2019). [8] J. Ridderbos et al., Nano Letters 20, 1, p. 122 (2020). [9] P. C. Spruijtenburg et al., Nanotechnology, (2018). [10] M. Brauns et al., Scientific Reports 8, 5690, (2018). [11] S. V. Amitonov et al., Applied Physics Letters 112, p. 023102 (2018). [12] A. J. Sousa de Almeida et al., Phys. Rev. B 101, 201301(R) (2020). Figure 1

Super-exponential growth of out-of-time-ordered correlators

Out-of-time-ordered correlators (OTOCs) are an effective tool in characterizing black hole chaos, many-body thermalization and quantum dynamics instability. Previous research findings have shown that the OTOCs' exponential growth (EG) marks the limit for quantum systems. However, we report in this letter a periodically-modulated nonlinear Schr\"odinger system, in which we interestingly find a novel way of information scrambling: super-EG. We show that the quantum OTOCs' growth, which stems from the quantum chaotic dynamics, will increase in a super-exponential way. We also find that in the classical limit, the hyper-chaos revealed by a linearly-increasing Lyapunov exponent actually triggers the super-EG of classical OTOCs. The results in this paper break the restraints of EG as the limit for quantum systems, which give us new insight into the nature of information scrambling in various fields of physics from black hole to many-body system.

Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits

Strong spin-orbit interactions make hole quantum dots central to the quest for electrical spin qubit manipulation enabling fast, low-power, scalable quantum computation. Yet it is important to establish to what extent spin-orbit coupling exposes qubits to electrical noise, facilitating decoherence. Here, taking Ge as an example, we show that group IV gate-defined hole spin qubits generically exhibit optimal operation points, defined by the top gate electric field, at which they are both fast and long-lived: the dephasing rate vanishes to first order in the electric field noise along with all directions in space, the electron dipole spin resonance strength is maximized, while relaxation is drastically reduced at small magnetic fields. The existence of optimal operation points is traced to group IV crystal symmetry and properties of the Rashba spin-orbit interaction unique to spin-3/2 systems. Our results overturn the conventional wisdom that fast operation implies reduced lifetimes and suggest group IV hole spin qubits as ideal platforms for ultra-fast, highly coherent scalable quantum computing.

Impact of an External Magnetic Field on Solitary Waves in Quantum Electron–Hole Plasmas of Semiconductors

The propagation of solitary acoustic pulses in magnetized quantum electron–hole plasmas of semiconductors has been studied. The effects of an external magnetic field and quantum terms, including the electrons and holes quantum recoil effects, exchange-correlation force, and the degenerate pressure of charge carriers are considered. Starting from quantum hydrodynamic equations, by using the reductive perturbation method, the Zakharov–Kuznetsov equation is derived. The theoretical model is applied to three types of semiconductors, namely GaAs, GaSb, and InP. It is clear that basic features of solitary acoustic waves are modified significantly by plasma parameters, especially number densities of semiconductors and magnetic field strength. The value of the amplitude and width of solitary waves strongly depends on the type of semiconductors and the propagation angle in a magnetized quantum electron-hole semiconductor plasma. Numerical results reveal that the width of the solitons gets reduced significantly with the increase of the magnetic field intensity while there is no effect on the amplitude of solitary waves. The weakest magnetic field that sets the pulse width to zero belongs to GaAs. Finally, the stability of the pulse soliton solution of the Zakharov–Kuznetsov equation has been discussed, analytically and numerically. The instability growth rate depends on plasma parameters and magnetic field intensity. The present paper can be meaningful in studying non-linear phenomena and instability behaviors in magnetized quantum electron–hole plasmas of semiconductors and the particle and energy transport mechanism in plasma-assisted quantum semiconductor nanodevices.

Nonextensive black hole entropy and quantum gravity effects at the last stages of evaporation

We analyze the generalized uncertainty principle (GUP) impact onto the nonextensive black hole thermodynamics by using R\'enyi entropy. We show that when introducing GUP effects, both R\'enyi entropy and temperature associated with black holes have finite values at the end of the evaporation process. We also study the sparsity of the radiation, associated with R\'enyi temperature, and compare it with the sparsity of Hawking radiation. Finally, we investigate GUP modifications to the sparsity of the radiation when GUP effects are introduced into R\'enyi temperature.

Low percolation density and charge noise with holes in germanium

We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55 nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we measure a percolation density for two-dimensional hole transport of 2.1 × 1010 cm−2, indicative of a very low disorder potential landscape experienced by holes in the buried Ge channel. These Ge heterostructures support quiet operation of hole quantum dots and we measure an average charge noise level of at 1 Hz, with the lowest level below our detection limit . These results establish planar Ge as a promising platform for scaled two-dimensional spin qubit arrays.

Thermofield double states in group field theory

Group field theories are higher-rank generalizations of matrix/tensor models, and encode the simplicial geometries of quantum gravity. In this paper, we study the thermofield double states in group field theories. The starting point is the equilibrium Gibbs states in group field theory recently found by Kotecha and Oriti, based on which we construct the thermofield double state as a “thermal” vacuum respecting the Kubo–Martin–Schwinger condition. We work with the Weyl [Formula: see text]-algebra of group fields, and a particular type of thermofield double states with single type of symmetry is obtained from the squeezed states on this Weyl algebra. The thermofield double states, when viewed as states on the group field theory Fock vacuum, are condensate states at finite flow parameter [Formula: see text]. We suggest that the equilibrium flow parameters [Formula: see text] of this type of thermofield double states in the group field theory condensate pictures of black hole horizon and quantum cosmology are related to the inverse temperatures in gravitational thermodynamics.

Фононный спектр LED-гетероструктуры InGaN/GaN с квантовыми ямами

Measurements of the phonon spectrum of the LED heterostructure based on the In0.12Ga0.88N/GaN barrier showed the presence in it of four peaks of phonon radiation with energies of 0.193, 0.207, 0.353, and 0.356 eV. From a comparison of the results of the calculation of the energy spectrum of the electron and hole quantum wells with the obtained experimental data, it was assumed that these peaks can be interpreted as the energies of phonons generated during the capture of electrons from the barrier layer to the second level of dimensional quantization, as well as during the relaxation of electrons from the second level to the radiation level and trapping holes to the upper level of the quantum well.

Electron-Hole Crossover in Gate-Controlled Bilayer Graphene Quantum Dots.

Electron and hole Bloch states in bilayer graphene exhibit topological orbital magnetic moments with opposite signs, which allows for tunable valley-polarization in an out-of-plane magnetic field. This property makes electron and hole quantum dots (QDs) in bilayer graphene interesting for valley and spin-valley qubits. Here, we show measurements of the electron–hole crossover in a bilayer graphene QD, demonstrating opposite signs of the magnetic moments associated with the Berry curvature. Using three layers of top gates, we independently control the tunneling barriers while tuning the occupation from the few-hole regime to the few-electron regime, crossing the displacement-field-controlled band gap. The band gap is around 25 meV, while the charging energies of the electron and hole dots are between 3 and 5 meV. The extracted valley g-factor is around 17 and leads to opposite valley polarization for electrons and holes at moderate B-fields. Our measurements agree well with tight-binding calculations for our device.

Spin Relaxation Benchmarks and Individual Qubit Addressability for Holes in Quantum Dots.

We investigate hole spin relaxation in the single- and multihole regime in a 2 × 2 germanium quantum dot array. We find spin relaxation times T1 as high as 32 and 1.2 ms for quantum dots with single- and five-hole occupations, respectively, setting benchmarks for spin relaxation times for hole quantum dots. Furthermore, we investigate qubit addressability and electric field sensitivity by measuring resonance frequency dependence of each qubit on gate voltages. We can tune the resonance frequency over a large range for both single and multihole qubits, while simultaneously finding that the resonance frequencies are only weakly dependent on neighboring gates. In particular, the five-hole qubit resonance frequency is more than 20 times as sensitive to its corresponding plunger gate. Excellent individual qubit tunability and long spin relaxation times make holes in germanium promising for addressable and high-fidelity spin qubits in dense two-dimensional quantum dot arrays for large-scale quantum information.

Varying Newton Constant and Black Hole to White Hole Quantum Tunneling

The thermodynamics of black holes is discussed for the case, when the Newton constant G is not a constant, but it is the thermodynamic variable. This gives for the first law of the Schwarzschild black hole thermodynamics: dSBH=−AdK+dMTBH, where the gravitational coupling K=1/4G, M is the black hole mass, A is the area of horizon, and TBH is Hawking temperature. From this first law, it follows that the dimensionless quantity M2/K is the adiabatic invariant, which, in principle, can be quantized if to follow the Bekenstein conjecture. From the Euclidean action for the black hole it follows that K and A serve as dynamically conjugate variables. Using the Painleve–Gullstrand metric, which in condensed matter is known as acoustic metric, we calculate the quantum tunneling from the black hole to the white hole. The obtained tunneling exponent suggests that the temperature and entropy of the white hole are negative.