Hole Confinement Research Articles

Reducing disorder in Ge quantum wells by using thick SiGe barriers

We investigate the disorder properties of two-dimensional hole gases in Ge/SiGe heterostructures grown on Ge wafers, using thick SiGe barriers to mitigate the influence of the semiconductor–dielectric interface. Across several heterostructure field effect transistors, we measure an average maximum mobility of (4.4±0.2)×106 cm2/Vs at a saturation density of (1.72±0.03)×1011 cm−2, corresponding to a long mean free path of (30±1)μm. The highest measured mobility is 4.68×106 cm2/Vs. We identify uniform background impurities and interface roughness as the dominant scattering mechanisms limiting mobility in a representative device, and we evaluate a percolation-induced critical density of (4.5±0.1)×109 cm−2. This low-disorder heterostructure, according to simulations, may support the electrostatic confinement of holes in gate-defined quantum dots.

An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION/IOFF ratio and steep subthreshold swing

In this work, we report on the high-performance p-GaN/InGaN/AlN multi-heterostructure p-channel metal–semiconductor field effect transistors (MESFETs) with energy-band modulated quantum well-like InGaN channel and low work function metal tungsten (W) as the gate material. A negative threshold voltage (VTH) of −0.35 V is achieved by precisely controlling the self-aligned etching depth at the active region. Benefiting from the enhanced hole confinement, the ION/IOFF ratio and subthreshold swing of the fabricated-channel MESFET are extracted to be 1.2 × 107 and 66 mV/dec, respectively, at room temperature. The idealized Schottky interface with TMAH and post-gate-annealing treatment shows an ultra-low voltage hysteresis of 0.08 V extracted at subthreshold area in the dual-sweep transfer curves.

A comparative study of impact ionization and avalanche multiplication in InAs, HgCdTe, and InAlAs/InAsSb superlattice

We use an ensemble Monte Carlo transport approach to calculate and compare the impact ionization and avalanche photodiode excess noise characteristics in three materials—a band-engineered InAlAs/InAsSb type-II superlattice, bulk InAs, and HgCdTe—all with an identical bandgap of 370 meV at 250 K. The electronic band structures and energy–momentum conservation conditions are used to calculate the impact ionization rates, carrier histories, multiplication gains, and excess noise characteristics. The calculated impact ionization coefficients and excess noise factors indicate a single carrier species multiplication in all three materials under low applied electric fields. We find the ratio of impact ionization coefficients to be k=7×10−4 for InAs and 3×10−4 for HgCdTe under an applied field of 50 kV/cm, and the superlattice to be k<10−6 at fields up to 400 kV/cm. The bulk materials experience avalanche breakdown as the applied field increases, transitioning to Geiger mode behavior at gains above 103 for InAs and 104 for HgCdTe. However, this breakdown is absent from the superlattice at the highest fields considered in this study due to hole confinement, indicating superior performance compared to the bulk materials. Our results demonstrate the role of superlattice band engineering in designing quality avalanche photodiode materials.

Theory and optimisation of radiative recombination in broken-gap InAs/GaSb superlattices

We present a theoretical analysis of mid-infrared radiative recombination in InAs/GaSb superlattices (SLs). We employ a semi-analytical plane wave expansion method in conjunction with an 8-band Hamiltonian to compute the SL electronic structure, paying careful attention to the identification and mitigation of spurious solutions. The calculated SL eigenstates are used directly to compute spontaneous emission spectra and the radiative recombination coefficient . We elucidate the origin of the relatively large coefficients in InAs/GaSb SLs which, despite the presence of spatially indirect (type-II-like) carrier confinement, are close to that of bulk InAs and compare favourably to those calculated for mid-infrared type-I pseudomorphic and metamorphic quantum well structures having comparable emission wavelengths. Our analysis explicitly quantifies the roles played by carrier localisation (specifically, partial delocalisation of bound electron states) and miniband formation (specifically, miniband occupation and optical selection rules) in determining the magnitude of and its temperature dependence. We perform a high-throughput optimisation of the room temperature coefficient in InAs/GaSb SLs across the 3.5–7 m wavelength range, quantifying the dependence of on the relative thickness of the electron-confining InAs and hole-confining GaSb layers. This analysis provides guidance for the growth of optimised SLs for mid-infrared light emitters. Our results, combined with the expected low non-radiative Auger recombination rates in structures having spatially indirect electron and hole confinement, corroborate recently observed high output power in prototype InAs/GaSb SL inter-band cascade light-emitting diodes.

Combined Effects of Intense THz Laser Field and Applied Electric Field on Binding Energy of Exciton in GaAs/GaAlAs Finite Spherical Quantum Dot

This paper describes the combined effects of intense THz laser field and electric field on the ground state binding energy of heavy hole excitons confined in GaAs/ GaAlAs spherical finite quantum dots. The formulation is based on the model of “laser dressed potential” which combines Coulomb interaction and field effect in only one potential as reported in the literature. The calculation is performed by using the variational method in the framework of the single band effective mass theory. Our results show that (i) the laser field increases the electron and hole confinement energy that form the exciton in the QD until they reach a maximum, then they become almost constant for an intense laser field, (ii)the electric field and the laser field lowers the binding energy for all quantum dot radii making the exciton stabilized and clustered near the center of the dot, and iii)the laser field increases the spatial extension of exciton but the electric field decreases it linearly.

Improved performance of quantum dot solar cells by type-II InAs/GaAsSb structure with moderate Sb composition

We demonstrate improved performance of quantum dot solar cells (QDSCs) by type-II InAs/GaAsSb structure. With a moderate Sb composition of 18% and high quality QDs, a high efficiency of 17.31% under AM1.5 G illumination is achieved, showing an improvement of 11.25% in efficiency relative to type-I InAs/InGaAs QDSC. This improvement can be attributed to a high fill factor (FF) of 72.37% compared to 63% of the latter because the type-II structure effectively suppresses carrier recombination losses in QDs. As Sb composition increases to 24%, the FF maintains at a high level of 72.67%, but the efficiency drops to 17% because the elevation of valence band (VB) in GaAsSb capping layer further enhances the hole confinement. And the confinement reduces external quantum efficiency (EQE) and short-circuit current density (Jsc). These results prove the potential of improving efficiency of QDSCs by type-II structure.

Metal sulfide sub-nanometer clusters formed within calix(8)arene Langmuir-Blodgett films

This work describes the construction of layered Langmuir-Blodgett (LB) films of a calixarene and the use of these as matrices for the synthesis of a range of metal sulfide nanoparticles. CuS, CdS, HgS, and PbS nano-clusters were formed within LB films of an octa-tertbutyl-calix(8)arene substituted with carboxylic acid groups deposited on different substrates (glass, quartz, and silicon) from either: (i) aqueous sub-phases containing 0.5 mM of the respective metal chloride salt (e.g. CuCl2, CdCl2, HgCl2, PbCl2), or (ii) by soaking the LB films in 10 mM solutions of the above salts for 1 h. The formation of metal-sulfide (MeS) nanoparticles was then achieved by exposing samples to H2S gas for 10–12 h.Deposition from salt containing subphases was more reliable and resulted in stoichiometric metal sulfides (CdS, HgS, PbS) being formed within LB films of the calix(8)arene carboxylic acid whereas Cu tended to form polysulfides. UV–vis absorption spectroscopy showed the presence of multiple absorption bands corresponding to electron transitions between energy levels in nanoclusters formed as result of quantum confinement of electrons and holes. The MeS clusters obtained by this process are amongst the smallest reported for LB films, being of the range 0.6–1.2 nm.

Semiconductor Membranes for Electrostatic Exciton Trapping in Optically Addressable Quantum Transport Devices

Combining the capabilities of gate-defined quantum transport devices in $\mathrm{Ga}\mathrm{As}$-based heterostructures and of optically addressed self-assembled quantum dots could open up broad perspectives in quantum technologies. For example, interfacing stationary solid-state qubits with photonic quantum states would open up a pathway towards the realization of a quantum network with extended quantum processing capacity in each node. While gated devices allow very flexible confinement of electrons or holes, the confinement of excitons without some element of self-assembly is much harder. To address this limitation, we introduce a technique to realize exciton traps in quantum wells via local electric fields by thinning a heterostructure down to a 220-nm-thick membrane. We show that mobilities over $1\ifmmode\times\else\texttimes\fi{}{10}^{6}\phantom{\rule{0.2em}{0ex}}{\mathrm{cm}}^{2}\phantom{\rule{0.2em}{0ex}}{\mathrm{V}}^{\ensuremath{-}1}\phantom{\rule{0.2em}{0ex}}{\mathrm{s}}^{\ensuremath{-}1}$ can be retained and that quantum point contacts and Coulomb oscillations can be observed on this structure, which implies that the thinning does not compromise the heterostructure quality. Furthermore, the local lowering of the exciton energy via the quantum-confined Stark effect is confirmed, thus forming exciton traps. These results lay the technological foundations for devices like single-photon sources, spin-photon interfaces and eventually quantum network nodes in $\mathrm{Ga}\mathrm{As}$ quantum wells, realized entirely with a top-down fabrication process.

Spirobifluorene-based hole-blocking material with enhanced efficiency through hole and exciton confinement in blue fluorescent OLEDs

A new hole-blocking material, 2-(9,9′-spirobi[fluoren]-5-yl)-4-phenylbenzo [4,5]thieno[3,2-d]pyrimidine (SBF-BTPym), was designed and synthesized using spirobifluorene and electron transport moieties. The high triplet energy and high thermal stability of the spirobifluorene moiety were suitable for designing the hole-blocking material for blue fluorescent organic light-emitting diodes (OLEDs). The electron deficiency of benzothienopyrimidine allowed good electron transport properties, and a deep highest occupied molecular orbital energy level of −6.55 eV suppressed leakage of the holes from the emitting layer (EML) to the adjacent layer. Blue fluorescent OLEDs consisting of a triplet-triplet annihilation–induced host were fabricated using SBF-BTPym. The maximum external quantum efficiency of the blue fluorescent device was 7.2%, which was higher than that of the device without a hole-blocking layer by 10%. According to transient electroluminescence analysis, exciton confinement in the EML is mainly responsible for the improved efficiency.

(Invited) Optoelectronic Quantum Information Processing: An All-Group IV Integrated Platform

Achieving coherent optical photon-to-spin conversion is a long-sought-after strategy for surmounting current fundamental limits in optical schemes that hinder the long-distance distribution of entanglement. Moreover, photon-to-spin interfaces are also essential for a direct mapping of the quantum information encoded in photon flying qubits to stationary spin processors. However, the lack of scalable materials offering an efficient interaction with optical photons along with optimal spin properties remains a formidable obstacle hindering the development of these quantum technological components. With this perspective, this presentation will discuss strategies to address these challenges by leveraging the degrees of freedom offered by group IV (Si)GeSn semiconductors, namely strain and composition, to tailor the electronic structure and eventually fulfill these prerequisites. These innovative systems do not only have the potential to enable coherent photon-to-spin interfaces, but because of their compatibility with the semiconductor industry they will also offer scalability, manufacturability, and cost-effectiveness.We will show that this family of semiconductors provide an additional flexibility to control the charge carrier states and achieve a selective confinement of holes. The latter benefit from a quiet quantum environment that has been at the core of increasingly reliable quantum processors and memories. However, most if not all available experimental studies of two-dimensional gas systems have been thus far focused on heavy-hole (HH) states. This is attributed to the nature of the heterostructures currently available (e.g, Ge/SiGe, InGaAs/GaAs), where compressive strain lifts the valence band degeneracy and leaves HH states energetically well above the light-hole (LH) states. We will demonstrate that tensile strained Ge/GeSn quantum wells alleviate these limitations and allow to selectively confine LH provided the strain is higher than 1%. This requires strain relaxed, high Sn content GeSn buffer layers to be used to grow Ge quantum wells with LH ground state, high g-factor anisotropy, and a tunable splitting of the hole subbands. The optical and electronic properties of these low-dimensional systems will be described and discussed. Spin injection and coherent control will also be addressed. Additionally, qubit designs exploiting the ability to engineer LH states and the Ge large spin-orbit coupling allowing fast all-electrical spin-manipulation schemes will also be presented and discussed.

Effect of PbPc on electron structure and carrier dynamics of black phosphorus

Using lead phthalocyanine (PbPc) as surface doping material on black phosphorous (BP) we observe enhanced photo-excited carriers in the PbPc/BP heterostructure. The interfacial energy level alignment is investigated with ultra violet photoemission spectroscopy (UPS) and x-ray photoemission spectroscopy (XPS). The heterojunction is type I with gap of BP nested in that of PbPc, facilitating confinement of electrons and holes in BP. Ultrafast time-resolved two-photon photoemission (TR-2PPE) spectroscopy is used to study the influence of PbPc on the photo excited unoccupied electronic states and the dynamics of the relaxation processes. Monolayer PbPc can greatly increase the pump excited hot electrons and the 2 photon emission of BP. The enhanced population in the intermediate states is attributed to the straddling of the band alignment which benefits the photo excited electrons in PbPc transferring to BP. Density functional theory calculations supported the interface dipole and charge redistribution. Our results provide a fundamental understanding of the excellent opto-electrical response of PbPc/BP interface of promising application in the high efficient photo detectors.

Spectra Stable Quantum Dots Enabled by Band Engineering for Boosting Electroluminescence in Devices

The band level landscape in quantum dots is of great significance toward achieving stable and efficient electroluminescent devices. A series of quantum dots with specific emission and band structure of the intermediate layer is designed, including rich CdS (R-CdS), thick ZnSe (T-ZnSe), thin ZnSe (t-ZnSe) and ZnCdS (R-ZnCdS) intermediate alloy shell layers. These quantum dots in QLEDs show superior performance, including maximum current efficiency, external quantum efficiencies and a T50 lifetime (at 1000 cd/m2) of 47.2 cd/A, 11.2% and 504 h for R-CdS; 61.6 cd/A, 14.7% and 612 h for t-ZnSe; 70.5 cd/A, 16.8% and 924 h for T-ZnSe; and 82.0 cd/A, 19.6% and 1104 h for R-ZnCdS. Among them, the quantum dots with the ZnCdS interlayer exhibit deep electron confinement and shallow hole confinement capabilities, which facilitate the efficient injection and radiative recombination of carriers into the emitting layer. Furthermore, the optimal devices show a superior T50 lifetime of more than 1000 h. The proposed novel methodology of quantum dot band engineering is expected to start a new way for further enhancing QLED exploration.

Green AgBiSe2/AgBiS2 core shell quantum dots for stable solar cells by robust SILAR method

Silver bismuth sulphide (AgBiS2) ternary quantum dots are emerging as benign photon absorbers for solar cells. Higher absorption coefficient, easy processability and favourable bandgaps have enabled their potential use in solar cells. In this work, for the first time an in-situ (SILAR - Successive ionic layer adsorption and reaction) water protocol is designed for a stable solar cell device using type-I heterostructure of AgBiSe2/AgBiS2 core shell quantum dots. The cells are fabricated by SILAR method unlike many reports of pre-synthesized quantum dots (QDs) making the device protocol highly robust. Alongside, various low-cost inorganic and solid-state hole transport materials are investigated for eliminating the woes of liquid electrolyte for this device. IV analysis carried out for the device performance reveals the designed heterostructure enhances the power conversion efficiency up to 70% (2.1%) from single junction AgBiS2 (1.4%) device. AgBiS2 acts as an absorber and also allows the confinement of electrons and holes in the core of AgBiSe2. AgBiS2 thus acts as passivating layer for the core, reducing free charge carriers from reaching the trap states located at particle surface. Type-I AgBiSe2/AgBiS2 core shell QDs show least recombination of excited electrons, better stability and higher quantum yield showing potential towards other photo applications like labelling and LEDs.

Milliwatt-power far-UVC AlGaN LEDs on sapphire substrates

AlGaN LEDs emitting < 230 nm UV light were fabricated on sapphire substrates. We employed a quantum well (QW) with an extremely thin barrier to enhance the quantum confinement of holes, wherein the calculation showed that the topmost valence subband became X±iY-like and increased the transverse-electric polarized emission. Additionally, we modified the Al composition of the spacer layer situated between the QW and an electron-blocking layer, which significantly improved the current-injection efficiency. The combination and optimization of these structures produced an LED emission of 228-nm UV light with an output power of 1.4 mW at 150 mA.

Linear bounded potential model for semiconductor band bending

We propose a simple but unexplored model for the semiconductor band bending with the aim to obtain a relatively simple expression to calculate the energy spectrum for the confined levels and the analytical expressions for wave-functions. This model consists of a linear potential but it is bounded or trimmed in energy unlike the well known wedge potential (WP) model. We present exact solutions for this potential in the frame of the effective mass approximation and they are valid for electron or hole confinement potential. This model provides a more adequate physical scenario than the WP since it takes into account the charge balance involved in the band bending potential. These results allow to treat confined potential problems as in the case of a two-dimensional electron gas in a simplified way. We discuss the application of this approximation to the recombination time of electrons an holes and for the Franz–Keldysh effect.

High hole mobility in boron delta-doped layers in diamond: why it is not achieved as yet and how it can be achieved

The required parameters of nanometer boron delta-doped layers in diamond for achieving high conductivity and hole mobility are calculated. The boron concentration in such layers has to be sufficient to achieve the insulator--metal phase transition, i. e. metallic conductivity. Then, it is demonstrated that taking into account valence band edge energy shift due to the presence of ionized boron atoms leads to the significant deepening of the potential well formed by the delta-doped layer for holes. It results in much stronger hole confinement than it was expected before. Thus, it is predicted that a significant delocalization-induced increase of hole mobility can be achieved if metallic boron delta-doped layer thickness is of order and smaller than 0.5 nm and compensation ratio does not exceed 42%. Keywords: delta-doped layers, nanostructures, diamond films chemically deposited from the vapor phase, hole mobility, insulator-metal phase transition.

Exciton Binding Energy in CdSe Nanoplatelets Measured by One- and Two-Photon Absorption

Colloidal semiconductor nanoplatelets exhibit strong quantum confinement for electrons and holes as well as excitons in one dimension, while their in-plane motion is free. Because of the large dielectric contrast between the semiconductor and its ligand environment, the Coulomb interaction between electrons and holes is strongly enhanced. By means of one- and two-photon photoluminescence excitation spectroscopy, we measure the energies of the 1S and 1P exciton states in CdSe nanoplatelets with thicknesses varied from 3 up to 7 monolayers. By comparison with calculations, performed in the effective mass approximation with account of the dielectric enhancement, we evaluate exciton binding energies of 195–315 meV, which is about 20 times greater than that in bulk CdSe. Our calculations of the effective Coulomb potential for very thin nanoplatelets are close to the Rytova-Keldysh model, and the exciton binding energies are comparable with the values reported for monolayer-thick transition metal dichalcogenides.

Organophosphine‐Sandwiched Copper Iodide Cluster Enables Charge Trapping

AbstractHerein, we report a feasible molecular design of the binuclear clusters featuring the n‐p‐n heterojunction of biligand‐sandwiched inorganic units, which can be used as the effective charge trapper in ambipolar transistor memories with the large memory windows and the energy‐saving operation. We found that the hole confinement on the p‐type inorganic units is enhanced by spatial electronic anisotropy provided by the peripheral n‐type organic phosphine ligands. The steric hindrance of the coordination sites, the insulating effect of the carbon‐phosphorous single bonds and the parallel dual‐ligand coordination mode jointly elongate the interunit distances to nanometer scale and restrain the intramolecular electronic communications, leading to the tunable and reliable charge trapping. Our results show that the spatial effect is crucial to further amplifying the electronic differences between organic and inorganic units for function enhancement.

Organophosphine-Sandwiched Copper Iodide Cluster Enables Charge Trapping.

Herein, we report a feasible molecular design of the binuclear clusters featuring the n-p-n heterojunction of biligand-sandwiched inorganic units, which can be used as the effective charge trapper in ambipolar transistor memories with the large memory windows and the energy-saving operation. We found that the hole confinement on the p-type inorganic units is enhanced by spatial electronic anisotropy provided by the peripheral n-type organic phosphine ligands. The steric hindrance of the coordination sites, the insulating effect of the carbon-phosphorous single bonds and the parallel dual-ligand coordination mode jointly elongate the interunit distances to nanometer scale and restrain the intramolecular electronic communications, leading to the tunable and reliable charge trapping. Our results show that the spatial effect is crucial to further amplifying the electronic differences between organic and inorganic units for function enhancement.

Homogeneous optical anisotropy in an ensemble of InGaAs quantum dots induced by strong enhancement of the heavy-hole band Landé parameter q

The authors report on a mechanism of strong enhancement of the band Land\'e parameter $q$ due to in-plane confinement of holes and the valence-band warping. This explains the surprisingly large in-plane hole $g$ factor in symmetric self-assembled (In,Ga)As/GaAs quantum dots with $D2d$ symmetry as revealed by coherent optical spectroscopy. The proposed mechanism results in uniform magnetic field induced optical anisotropy for the entire quantum dot ensemble, which is a prerequisite for the realization of spin quantum memories and spin-photon entanglement in the ensemble.