Abstract
We demonstrate improved performance of quantum dot solar cells (QDSCs) by type-II InAs/GaAsSb structure. With a moderate Sb composition of 18% and high quality QDs, a high efficiency of 17.31% under AM1.5 G illumination is achieved, showing an improvement of 11.25% in efficiency relative to type-I InAs/InGaAs QDSC. This improvement can be attributed to a high fill factor (FF) of 72.37% compared to 63% of the latter because the type-II structure effectively suppresses carrier recombination losses in QDs. As Sb composition increases to 24%, the FF maintains at a high level of 72.67%, but the efficiency drops to 17% because the elevation of valence band (VB) in GaAsSb capping layer further enhances the hole confinement. And the confinement reduces external quantum efficiency (EQE) and short-circuit current density (Jsc). These results prove the potential of improving efficiency of QDSCs by type-II structure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
