(Invited) Optoelectronic Quantum Information Processing: An All-Group IV Integrated Platform

Abstract

Achieving coherent optical photon-to-spin conversion is a long-sought-after strategy for surmounting current fundamental limits in optical schemes that hinder the long-distance distribution of entanglement. Moreover, photon-to-spin interfaces are also essential for a direct mapping of the quantum information encoded in photon flying qubits to stationary spin processors. However, the lack of scalable materials offering an efficient interaction with optical photons along with optimal spin properties remains a formidable obstacle hindering the development of these quantum technological components. With this perspective, this presentation will discuss strategies to address these challenges by leveraging the degrees of freedom offered by group IV (Si)GeSn semiconductors, namely strain and composition, to tailor the electronic structure and eventually fulfill these prerequisites. These innovative systems do not only have the potential to enable coherent photon-to-spin interfaces, but because of their compatibility with the semiconductor industry they will also offer scalability, manufacturability, and cost-effectiveness.We will show that this family of semiconductors provide an additional flexibility to control the charge carrier states and achieve a selective confinement of holes. The latter benefit from a quiet quantum environment that has been at the core of increasingly reliable quantum processors and memories. However, most if not all available experimental studies of two-dimensional gas systems have been thus far focused on heavy-hole (HH) states. This is attributed to the nature of the heterostructures currently available (e.g, Ge/SiGe, InGaAs/GaAs), where compressive strain lifts the valence band degeneracy and leaves HH states energetically well above the light-hole (LH) states. We will demonstrate that tensile strained Ge/GeSn quantum wells alleviate these limitations and allow to selectively confine LH provided the strain is higher than 1%. This requires strain relaxed, high Sn content GeSn buffer layers to be used to grow Ge quantum wells with LH ground state, high g-factor anisotropy, and a tunable splitting of the hole subbands. The optical and electronic properties of these low-dimensional systems will be described and discussed. Spin injection and coherent control will also be addressed. Additionally, qubit designs exploiting the ability to engineer LH states and the Ge large spin-orbit coupling allowing fast all-electrical spin-manipulation schemes will also be presented and discussed.