High Piezoelectric Coefficient Research Articles

Broad Temperature Plateau for High Piezoelectric Coefficient by Embedding PNRs in Singe‐Phase KNN‐Based Ceramics

AbstractTo date, the enormous potential of lead‐free piezoceramics in ultrasonic transducers and micro‐actuators has driven extensive research and development. Although the piezoelectric coefficient (d33) of lead‐free ceramics is improved unprecedentedly, the breakthrough in comprehensive performance is still a key issue, one of which is the inverse relationship between d33 and Curie temperature (TC), and the other is the temperature stability of piezoelectricity. Here, based on the synergistic optimization of the chemical component modulation and texture technology, the high Curie temperature (≈365 °C), high piezoelectric properties (d33 ≈331 pC/N, d33* ≈561 pm V−1) and advanced piezoelectric temperature stability are realized by embedded PNRs in the conceived and prepared lead‐free single phase 0.96((K0.5Na0.5)(Nb0.98Ta0.02)O3)‐0.01(Bi(Ni0.67Nb0.33)O3)‐0.03(Bi0.5K0.5)HfO3 texture ceramics. The d33 changes by only 2.0% when the temperature is increased from 25 to 100 °C (≈10.0% to 200 °C), while the electrical strain (d33*) changes by only 4.2% when the temperature is increased from 25 to 175 °C (≈9.8% to 200 °C), which is comparable to the commercial lead‐based materials (i.e., PZT‐4). This work demonstrates significant progress in the comprehensive piezoelectric performance (especially the piezoelectric temperature stability) of lead‐free ceramics and inspires further attempts to achieve high‐temperature piezoelectric properties.

Piezoelectric GaGeX2 (X = N, P, and As) semiconductors with Raman activity and high carrier mobility for multifunctional applications: a first-principles simulation.

In the present work, we propose GaGeX2 (X = N, P, As) monolayers and explore their structural, vibrational, piezoelectric, electronic, and transport characteristics for multifunctional applications based on first-principles simulations. Our analyses of cohesive energy, phonon dispersion spectra, and ab initio molecular dynamics simulations indicate that the three proposed structures have good energetic, dynamic, and thermodynamic stabilities. The GaGeX2 are found as piezoelectric materials with high piezoelectric coefficient d 11 of -1.23 pm V-1 for the GaGeAs2 monolayer. Furthermore, the results from electronic band structures show that the GaGeX2 have semiconductor behaviours with moderate bandgap energies. At the Heyd-Scuseria-Ernzerhof level, the GaGeP2 and GaGeAs2 exhibit optimal bandgaps for photovoltaic applications of 1.75 and 1.15 eV, respectively. Moreover, to examine the transport features of the GaGeX2 monolayers, we calculate their carrier mobility. All three investigated GaGeX2 systems have anisotropic carrier mobility in the two in-plane directions for both electrons and holes. Among them, the GaGeAs2 monolayer shows the highest electron mobilities of 2270.17 and 1788.59 cm2 V-1 s-1 in the x and y directions, respectively. With high electron mobility, large piezoelectric coefficient, and moderate bandgap energy, the GaGeAs2 material holds potential applicability for electronic, optoelectronic, piezoelectric, and photovoltaic applications. Thus, our findings not only predict stable GaGeX2 structures but also provide promising materials to apply for multifunctional devices.

Improving piezoelectric performance in PMN-0.26 PT single crystal via low frequency AC poling

In this experiment, the alternating current poling (ACP) was applied to the 0.74 Pb(Mg1/3Nb2/3)O3-0.26PbTiO3 (PMN-0.26 PT) single crystal to explore the impact of low frequency (0.1 Hz) ACP on electrical performance. When the poling condition is loading 5 cycles at 14 kV/cm, high piezoelectric coefficient d33 of 1780 pC/N and giant dielectric constant of 5881 are obtained for the ACP treatment sample, enhanced 42.4 % and 14.3 % by contrast with the conventional direct current poling (DCP), respectively. The values of coercive field, maximum strain, and converse piezoelectric constant d33∗ vary considerably around the ferroelectric phase transition detected by polarization-electric field, as well as bipolar and unipolar electric field-induced strain hysteresis loops. In addition, the domain configuration of the ACP sample presents a more periodic stripe-like structure with narrower width and relatively more uniformity after three months aging as compared with the DCP sample, showing the importance of domain engineering in enhancing electrical performance of ferroelectric single crystals.

Enhancing piezoelectric coefficient and thermal stability in lead-free piezoceramics: insights at the atomic-scale

Given the highly temperature-sensitive nature of the polymorphic phase boundaries, attaining excellent piezoelectric coefficient with superior temperature stability in lead-free piezoceramics via direct compositional design remains a formidable challenge. We demonstrate the synergistic improvement of piezoelectric coefficient and thermal stability in lead-free piezoceramics via atomic-scale local ferroelectric structure design. Via modulation of the local Landau energy barrier at doping sites, we effectively mitigate fluctuations in piezoelectric d33. Our approach achieves an impressive d33 of ~430 pC/N with a minimal temperature fluctuation range (△d33 ~ 7%) across the room temperature to 100 °C in potassium sodium niobate ceramics. Further optimization through annealing extends this temperature up to 150 °C (△d33 ~ 8%) while maintaining a high d33 of ~380 pC/N, rivaling the performance of classic temperature stable lead zirconate titanate. This work establishes a framework for addressing the dilemma between high piezoelectric coefficient and inadequate temperature stability in lead-free piezoceramics.

Theoretical study of the strong piezo-phototronic effect in 2D monochalcogenides for multi-junction solar cells

The piezophototronic effect is a new scientific area that investigates the synergistic interactions of piezoelectric, semiconductor, and photoexcitation features. This effect is seen in crystals lacking inversion symmetry, where applied strain alters electronic transport and provides a way to modify material properties. Monolayer 2D semiconductors, such as transition metal dichalcogenides (TMDCs) and group IV monochalcogenides, have higher piezoelectric coefficients than conventional piezoelectric materials. This study proposes the development of a stable, high-performance multijunction solar cell (MJSC) leveraging the piezo-phototronic effect. The emphasis is on single-type 5-layer 2D monochalcogenides (SnS, SnSe, GeS, and GeSe) with the assistance of strain engineering. Surprisingly, the ultrathin parallel-connected solar cell achieves an electric power conversion efficiency of over 31% when tested under blackbody radiation, surpassing the recognized Shockley–Queisser (S-Q) limit. The piezophototronic effect improves solar cell performance while also addressing voltage mismatch issues. This work introduces a novel approach to developing and manufacturing high-efficiency and robust monolayer multijunction photovoltaic solar cells (MJPSC) based on 2D monochalcogenides.

Systematic approach for high piezoelectric AlN deposition

Aluminum nitride (AlN) is a wide band gap semiconductor with interesting piezoelectric properties for many applications, including micromechanical systems (MEMS), acoustic wave sensors or energy harvesting devices. The influence of DC reactive magnetron sputtering (DCRMS) deposition parameters on the structural, crystalline, and piezoelectric properties of AlN thin films are presented. The systematic approach of Design of Experiments (DoE) has been used to evaluate the role of magnetron power, nitrogen and argon flows on the deposition process and the film properties. Magnetron power and argon flow have resulted to be the parameters causing the most significant effects on the deposition rate. AlN films have been deposited with a high crystal quality, showing low values of FWHM (0.28) and c-axis orientation parallel oriented respect to the growth direction, as evidenced by X-ray diffraction (XRD) analysis and high-resolution transmission electron microscopy (HRTEM). These samples also showed a high piezoelectric coefficient (d33) of 5 pC/N for AlN thin films. This work highlights the importance of deposition parameters on the properties of the film and the important role that DoE play for its optimization with a minimum number of depositions.

A molecular ferroelectric thin film of imidazolium perchlorate on silicon

Molecular ferroelectrics have garnered significant attention due to their structural tunability, low synthesis temperature, and high flexibility. Herein, we successfully synthesized imidazole perchlorate (ImClO4) single crystals and high-quality, highly-oriented thin films on Si substrates. These films demonstrated a high inverse piezoelectric coefficient of 55.7 pm/V. Two types of domain bands were observed: type-I bands tilted ~60° relative to the horizontal axis, and type-II bands positioned perpendicular to the horizontal axis. Under a + 20 V bias, type-I bands showed a reduction and detachment of 180° domain walls to form a needle-like domain. It extended toward the band boundary after applying −20 V bias, which grew along the boundary upon contact. In contrast, type-II bands showed straight domain wall motion and displayed a higher piezoresponse than type-I bands. The growth of high quality molecular ferroelectric thin films on Si substrates paves the way for the development of on-chip devices.

Flexible all-inorganic BiFeO3-based film with high piezoelectric coefficient for energy harvesting and sensing

Flexible all-inorganic BiFeO3-based film with high piezoelectric coefficient for energy harvesting and sensing

Wafer-scale Te thin film with high hole mobility and piezoelectric coefficients

p-type semiconductors are significant for integrated nanoelectronics. Tellurium (Te), a mono-elemental material, is a p-type semiconductor with high mobility. Its outstanding performance renders it widely applicable in the fields of electronics and optoelectronics. However, the wafer-scale fabrication of Te thin films is challenging. In this study, we reported an ion-bean sputtered Te thin film and investigated the effects of annealing temperatures. Annealing-induced crystallization kinetics were assessed through Raman spectroscopy, x-ray diffraction, and atomic force microscopy. After annealing, the film's conductivity increased from 10−5 to 10−4 S and mobility from 18 to 53 cm2 V−1 s−1. Dual AC resonance tracking switching spectroscopy piezoelectric force microscopy is used to investigate piezo/ferroelectric properties. The coercive voltages are −2 and 4 V respectively, and the effective piezoelectric coefficient (d33) is 40 pm/V. Butterfly and phase-switching loops demonstrate its possible ferroelectricity. The Te thin film has potential applications in optoelectronics, nonvolatile memory devices, and neuromorphic computation.

Ultrahigh energy harvesting ability of PVDF incorporated with 2D halide perovskite nanosheets via interface effect

Two-dimensional (2D) perovskites have recently emerged as an new family of ferroelectrics and attracted extensive attention for their specific surface interface characteristics benefitting from the unique structure by inserting hydrophobic organic cations into conventional three-dimensional frameworks. In this study, 2D metal–organic perovskite nanosheets, (C4H9NH3)2CsPb2Br7, ((BA)2CsPb2Br7), were successfully synthesized by facile temperature-cooling method and introduced into poly (vinylidene fluoride) (PVDF) polymer fibers to construct flexible piezoelectric energy harvester (PEH). (BA)2CsPb2Br7/PVDF nanofibers reveal a high piezoelectric coefficient (d33) of 63.3 pm/V, which is 2.9 times of the PVDF polymer (21.7 pm/V). Principally, the PVDF composite with 5 wt% (BA)2CsPb2Br7 nanosheet filler assumes an superior electroactive phase amount of about ∼ 93 % profiting from the interfacial interaction between BA+ cations of (BA)2CsPb2Br7 and the dipoles of PVDF. The PEH based on (BA)2CsPb2Br7 nanosheets embedded in PVDF fibers showed a maximum output voltage, 135 V, which is almost 17 times of the PEH based on neat PVDF fibers. Furthermore, the interfacial interaction between (BA)2CsPb2Br7 and PVDF was analyzed by first principle DFT study which reveals electrons migrate and the interfacial polarization between the interface. Simultaneously, (BA)2CsPb2Br7/PVDF composite fibers based PEH reveals exceptional long-term stabilities and durability. More attractively, the exceptional performance of this fabricated PEH evinces a pressure sensitivity of ∼ 7.3 V/N and bio-mechanical harvesting behavior arising from varied human motions, such as beating, pressing, twisting, walking and running. This cost-effective and high performance of (BA)2CsPb2Br7/PVDF based PEH is favorable for the continuation of 2D halide perovskites for further application in new energy and biomechanical filed.

Flexible dual-mode pressure sensor for simultaneous dynamic-static sensing with wide-range detection and ultra-fast response speed

Flexible pressure sensors play a vital role in advancing the Internet of Things (IoT). However, piezoelectric sensors are limited in static pressure detection and suffer in achieving high flexibility and high sensitivity simultaneously, while piezoresistive sensors typically have slow response speeds and insensitive high-frequency detection ability. Here, we select a novel basalt fiber fabric (BFF) that can withstand high temperatures exceeding 1000 °C as a new substrate to enable one-step fabrication of piezoelectric layer based on coherently grown Pb(Zr0.52Ti0.48)O3 (PZT) thin films via a simple dipping method. The high piezoelectric coefficient g33 of 362.5 mV·m·N−1 and the unique core-sheath structure induced stress concentration on the PZT sheath enable the flexible piezoelectric layer (bending radius < 1.45 mm) to exhibit high sensitivity (voltage sensitivity of 2.766 V/kPa within the range of 0.11–11.11 kPa) and fast response speed (11 ms). The piezoresistive layer consisting of a three-dimensional porous elastic carbon nanotube-polyurethane sponge provides a detection range comparable to piezoelectric layer (0.11–66.67 kPa). A dual-mode flexible pressure sensor (DMFS) has been developed by integrating the piezoelectric layer with the piezoresistive layer. The DMFS exhibits an extended detection range compared to previous dual-mode pressure sensors, rapid response speed, and high sensitivity, which enables simultaneous detection of both dynamic and static pressures. The DMFS can be used for keyboard and movement posture recognition, which has significant application prospects in human-machine interaction.

PNN-PST-PT ferroelectric ceramics with ultrahigh piezoelectricity and superior electromechanical performance for high quality piezo-sensors

A novel ferroelectric ceramic system, Pb(Ni1/3Nb2/3)O3–Pb(Sc1/2Ta1/2)O3–PbTiO3 (PNN-PST-PT), with ultrahigh piezoelectricity and super electromechanical performance is developed. The microstructure and crystal structure of PNN-PST-PT ceramics, along with their electrical properties, were examined regarding PNN content. The results indicated that the room-temperature dielectric constant was considerably enhanced with PNN content increasing and the values of Pr, Pmax, and Ec steadily declining. The optimal performance was achieved in the 0.4PNN-0.235PST-0.365 PT composition with a high piezoelectric coefficient (d33) of 1028 pC/N and an electromechanical coupling factor (kp) of 0.69. Strong piezoelectric response is attributed to the coexistence of R and T phases as well as the enhanced relaxation characteristics, which manifest as a specific polarization configuration resulting from the local structural distortion caused by the co-occupation of ions with different radii at the B-site. These suggest that PNN-PST-PT ceramics can be a desirable material for applications in high-quality piezosensors, actuators, etc.

Surface Oxygen Vacancies and Corona Polarization of Bi4Ti3O12 Nanosheets for Synergistically Enhanced Sonopiezoelectric Therapy.

Sonopiezoelectric therapy, an ultrasound-activated piezoelectric nanomaterial for tumor treatment, has emerged as a novel alternative modality. However, the limited piezoelectric catalytic efficiency is a serious bottleneck for its practical application. Excellent piezoelectric catalysts with high piezoelectric coefficients, good deformability, large mechanical impact surface area, and abundant catalytically active sites still need to be developed urgently. In this study, the classical ferroelectric material, bismuth titanate (Bi4Ti3O12, BTO), is selected as a sonopiezoelectric sensitizer for tumor therapy. BTO generates electron-hole pairs under ultrasonic irradiation, which can react with the substrates in a sonocatalytic-driven redox reaction. Aiming to further improve the catalytic activity of BTO, modification of surface oxygen vacancies and treatment of corona polarization are envisioned in this study. Notably, modification of the surface oxygen vacancies reduces its bandgap and inhibits electron-hole recombination. Additionally, the corona polarization treatment immobilized the built-in electric field on BTO, further promoting the separation of electrons and holes. Consequently, these modifications greatly improve the sonocatalytic efficiency for in situ generation of cytotoxic ROS and CO, effectively eradicating the tumor.

Piezoelectric fibers based on silk fibroin with excellent output performance

Abstract The self-powered tissue engineering scaffold with good biocompatibility is of great significance for stimulating nerve cell growth. In this study, silk fibroin (SF)-based fibers with regulatable structure and piezoelectric performance are fabricated by dry-spinning and post-treatment. The concentration of SF and calcium ion in spinning dope and the post-treatment affect the conformation transition and crystallinity of SF. As a result, the SF fibers exhibit high piezoelectric coefficient d 33 (3.24 pm/V) and output voltage (∼ 27 V). Furthermore, these piezoelectric fibers promote the growth of PC-12 cells, demonstrating the promising potential for nerve repair and other energy harvester.

Understanding and tuning negative longitudinal piezoelectricity in hafnia

Most piezoelectric materials exhibit a positive longitudinal piezoelectric effect (PLPE), while a negative longitudinal piezoelectric effect (NLPE) is rarely reported or paid much attention. Here, utilizing first-principles calculations, we unveil the origin of negative longitudinal piezoelectricity in ferroelectric hafnia by introducing the concept of weighted projected bond strength around cation in the c direction (WPBc), which is proposed to quantitatively characterize the asymmetric bonding stiffness along the strain direction. When the WPBc is anti-parallel to the direction of bulk spontaneous polarization, the polarization decreases with respect to tensile strain and leads to a negative piezoelectricity. Furthermore, to confirm the influence of WPBc on the piezoelectric effect and understand how the value of WPBc influences the piezoelectric coefficient e33, we acquire both the piezoelectric coefficient of doped hafnia and the corresponding bonding environment around each cation. The finding reveals that the more negative piezoelectric coefficient can be achieved through a concurrent achievement of the more negative average WPBc and the lower standard deviation (STD) of WPBc. In addition, the Sn-doped hafnia with the lowest average WPBc and smaller STD-WPBc is identified to have the highest piezoelectric coefficient (−2.04 C/m2) compared to other dopants, showing great potential in next-generation electromechanical devices.

High-Performance Piezoelectric Two-Dimensional Covalent Organic Frameworks.

Organic piezoelectric nanogenerators (PENGs) are attractive in harvesting mechanical energy for various self-powering systems. However, their practical applications are severely restricted by their low output open circuit voltage. To address this issue, herein, we prepared two two-dimensional (2D) covalent organic frameworks (COFs, CityU-13 and CityU-14), functionalized with fluorinated alkyl chains for PENGs. The piezoelectricity of both COFs was evidenced by switchable polarization, characteristic butterfly amplitude loops, phase hysteresis loops, conspicuous surface potentials and high piezoelectric coefficient value (d33). The PENGs fabricated with COFs displayed highest output open circuit voltages (60 V for CityU-13 and 50 V for CityU-14) and delivered satisfactory short circuit current with an excellent stability of over 600 seconds. The superior open circuit voltages of CityU-13 and CityU-14 rank in top 1 and 2 among all reported organic materials-based PENGs.

High‐performance Piezoelectric Two‐dimensional Covalent Organic Frameworks

Organic piezoelectric nanogenerators (PENGs) are attractive in harvesting mechanical energy for various self‐powering systems. However, their practical applications are severely restricted by their low output open circuit voltage. To address this issue, herein, we prepared two two‐dimensional (2D) covalent organic frameworks (COFs, CityU‐13 and CityU‐14), functionalized with fluorinated alkyl chains for PENGs. The piezoelectricity of both COFs was evidenced by switchable polarization, characteristic butterfly amplitude loops, phase hysteresis loops, conspicuous surface potentials and high piezoelectric coefficient value (d33). The PENGs fabricated with COFs displayed highest output open circuit voltages (60 V for CityU‐13 and 50 V for CityU‐14) and delivered satisfactory short circuit current with an excellent stability of over 600 seconds. The superior open circuit voltages of CityU‐13 and CityU‐14 rank in top 1 and 2 among all reported organic materials‐based PENGs.

A piezoelectric vibration sensor with excellent performance based on Bi12SiO20 crystal for high-temperature applications

High-temperature piezoelectric vibration sensors play a crucial role in the accurate monitoring of the dynamic mechanical conditions in aerospace, automotive, and energy generation systems. However, the use of conventional piezoelectric materials in high-temperature environments is restricted owing to their limited Curie temperatures. In this study, we grew a piezoelectric crystal Bi12SiO20 (BSO) with the crystal cut optimized for high longitudinal piezoelectric coefficient and low piezoelectric crosstalk behaviors. Subsequently, a compression-type piezoelectric vibration sensor utilizing the BSO bulk crystal was developed and fabricated for structural health monitoring under high temperatures. The impact of pre-tightening torques on the sensor performance was investigated. Moreover, the sensor performance was analyzed under temperatures up to 650 °C. The BSO-based sensor exhibited an average sensitivity of ∼3.89 pC/g between 25 and 650 °C under 160 Hz frequency, with a variation of 5.5%. Additionally, the BSO-based sensor demonstrated ultra-stable sensitivity at 600 °C, highlighting its strong sensing capabilities and reliability under high temperatures. Thus, the BSO-based vibration sensor is a promising option for structural health monitoring applications under high temperatures.

High-precision BaTiO3 piezoelectric ceramics via vat photopolymerization 3D printing

BaTiO3 ceramics with high precision and superior performance are fabricated by vat photopolymerization 3D printing technology. The curing behaviors and photosensitive mechanisms are systematically investigated. Through the optimization of printing parameters, BaTiO3 ceramics with a high relative density of 95 % and few defects are obtained. Notably, the sintered BaTiO3 ceramics exhibit impressive properties, including a high piezoelectric coefficient d33 of 201 pC/N and strong ferroelectric characteristics with a maximum polarization Pmax of 31.4 μC/cm2 and residual polarization Pr of 18.5 μC/cm2. More importantly, a series of complex BaTiO3 structures including the body-centered cubic lattice and triply periodic minimal surface (TPMS) structures are created perfectly with the feature size as fine as 75 μm. Compared with other reported BaTiO3 structures printed by vat photopolymerization and material extrusion technologies, this work realizes a much higher printing resolution. The excellent performance and high precision of these BaTiO3 ceramics make them great potential for practical applications in piezoelectric components.

A novel PZT hollow structure utilized in high-performance piezoelectric nanogenerator

The transformation of environmentally benign waste energy into functional electricity holds profound implications for advancements in human progress. Herein, we detail the synthesis of tubular nanofibers featuring a hollow architecture through an innovative combination of sol-gel processing and electrospinning techniques, followed by surface modification with dopamine. These engineered PZT hollow nanotubes, upon integration into PVDF piezoelectric films, serve as potent reinforcing agents that amplify the piezoelectric active phase within the PVDF matrix. The introduction of these hollow PZT nanostructures alters the polarization electric field distribution, thereby augmenting the polarization dynamics of PVDF and significantly enhancing the piezoelectric performance of the resultant PVDF/PZT composite films. Our novel nano-generator exhibits an exceptional balance between a high piezoelectric coefficient, superior output characteristics, and commendable stability. Notably, the piezoelectric constant (d33) of Neat PVDF films experiences a substantial elevation from 9 pC N−1 to 20 pC N−1, representing an impressive enhancement of approximately 122 %. Furthermore, the power density achieves a value of 0.54 μW cm−2. This study introduces an effective approach to augment the productive output capability of composite nanogenerators, paving the way for sustainable energy harvesting technologies.