High Optical Output Power Research Articles

Piezoelectrically tunable, narrow linewidth photonic integrated extended-DBR lasers

Recent advancements in ultra-low-loss silicon nitride (Si3N4)-based photonic integrated circuits have surpassed fiber lasers in coherence and frequency agility. However, high manufacturing costs of DFB and precise control requirements, as required for self-injection locking, hinder widespread adoption. Reflective semiconductor optical amplifiers (RSOAs) provide a cost-effective alternative solution but have not yet achieved similar performance in coherence or frequency agility, as required for frequency modulated continuous wave (FMCW) LiDAR, laser locking in frequency metrology, or wavelength modulation spectroscopy for gas sensing. Here, we overcome this challenge and demonstrate an RSOA-based and frequency-agile fully hybrid integrated extended distributed Bragg reflector (E-DBR) laser with high-speed tuning, good linearity, high optical output power, and turn-key operability. It outperforms Vernier and self-injection locked lasers, which require up to five precise operating parameters and have limitations in continuous tuning and actuation bandwidth. We maintain a small footprint by utilizing an ultra-low-loss 200 nm thin Si3N4 platform with monolithically integrated piezoelectric actuators. We co-integrate the DBR with a compact ultra-low-loss spiral resonator to further reduce the intrinsic optical linewidth of the laser to the Hertz-level—on par with the noise of a fiber laser—via self-injection locking. The photonic integrated E-DBR lasers operate at 1550 nm and feature up to 25 mW fiber-coupled output power in the free-running and up to 10.5 mW output power in the self-injection locked state. The intrinsic linewidth is 2.5 kHz in the free-running state and as low as 3.8 Hz in the self-injection locked state. In addition, we demonstrate the suitability for FMCW LiDAR by showing laser frequency tuning over 1.0 GHz at up to 100 kHz triangular chirp rate with a nonlinearity of less than 0.6% without linearization by modulating a Bragg grating using monolithically integrated aluminum nitride (AlN) piezoactuators.

All-optical photonic crystal Feynman and NOT logic gates based on the interference effect

In this paper, an ultra-compact photonic crystal structure for the development of reversible Feynman and NOT logic gates is introduced. The proposed structure includes two-dimensional (2D) silicon dielectric rods in air. The analysis and evaluations are carried out using finite-difference time-domain (FDTD) and plane-wave expansion (PWE) methods. The proposed design provides a smaller structure, higher contrast ratio, lower power consumption, and compatibility with silicon technology. In the application of this structure for a NOT logic gate, one port is considered as control with a contrast ratio of 28.73 dB between 0 and 1 logic levels. For the Feynman logic gate, the contrast ratio is 20.33 dB. Moreover, the response times for the proposed Feynman and NOT logic gates are 0.54 ps and 0.56 ps, respectively. High optical output power, small dimension, and low response time make our proposed structure a suitable candidate for all-optical integrated circuits.

Achieving High Quantum Efficiency Broadband NIR Mg4 Ta2 O9 :Cr3+ Phosphor Through Lithium-Ion Compensation.

Ultra-efficient broadband near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) are urgently needed to improve the detection sensitivity and spatial resolution of current smart NIR spectroscopy-based techniques. Nonetheless, the performance of NIR pc-LED has severely limited owing to the external quantum efficiency (EQE) bottleneck of NIR light-emitting materials. Herein, a blue LED excitable Cr3+ -doped tetramagnesium ditantalate (Mg4 Ta2 O9 , MT) phosphor is advantageously modified through lithium ion as a key efficient broadband NIR emitter to achieve high optical output power of the NIR light source. The emission spectrum encompasses the 700-1300nm electromagnetic spectrum of first biological window (λmax = 842nm) with a full-width at half-maximum (FWHM) of ≈2280 cm-1 (≈167nm), and achieves a record EQE of 61.25% detected at 450nm excitation through Li-ion compensation. A prototype NIR pc-LED is fabricated with MT:Cr3+ , Li+ to evaluate its potential practical application, which reveals an NIR output power of 53.22mW at a driving current of 100mA, and a photoelectric conversion efficiency of 25.09% at 10mA. This work provides an ultra-efficient broadband NIR luminescent material, which shows great promise in practical applications and presents a novel option for the next-generation high-power compact NIR light sources.

10-Gbps visible light communication in a 10-m free space based on violet series-biased micro-LED array and distance adaptive pre-equalization.

In this paper, we fabricated a 3×3 violet series-biased micro-LED array with high-output optical power and applied it in high-speed and long-distance visible light communication. By employing the orthogonal frequency division multiplexing modulation scheme, distance adaptive pre-equalization, and a bit-loading algorithm, record data rates of 10.23 Gbps, 10.10 Gbps, and 9.51 Gbps were achieved at 0.2 m, 1 m, and 10 m, respectively, below the forward error correction limit of 3.8×10-3. To the best of our knowledge, these are the highest data rates achieved by violet micro-LEDs in free space and the first communication demonstration beyond 9.5 Gbps at 10 m using micro-LEDs.

Controllable crystallization based on the aromatic ammonium additive for efficiently near-infrared perovskite light-emitting diodes

Organic-inorganic hybrid perovskite have recently drawn appreciable attention for applications in light-emitting diodes (LEDs). However, the weak exciton binding energy of the methylammonium lead iodide perovskite introduces large exciton dissociation and low radiative recombination on its application as emission layer in near-infrared LEDs. Herein, we demonstrate the simple method by incorporating of phenethylammonium iodide (PEAI) into the perovskite can concurrently improve the radiative recombination rate for improving perovskite LED performances. Additionally, by introducing PEAI dramatically constrains the growth of perovskite crystals during film forming, producing crystallites with small dimensions, reducing roughness, and pin-hole free. After optimizing the emission layer in the perovskite LED, a high optical output power of 458.03 μW and external quantum efficiency of 5.25% are achieved, which represents a ~50-fold enhancement in the quantum efficiency compared to device without PEAI. Our work suggests a broad application prospect of perovskite materials for high optical output power LEDs and eventually a potential for solution-processed electrically pumped NIR laser diodes. • The mixing of PEAI in the perovskite precursor can effectively reduce the size of the perovskite crystals • Photoluminance and electroluminance intensity becomes stronger with increasing additive concentration • A pin-holes free thin films are achieved when adding the PEAI • Tremendous reduction in turn-on voltage and outstanding improvement of output power

Lau Effect Using LED Array for Lithography

Illumination with LEDs is of increasing interest in imaging and lithography. In particular, compared to lasers, LEDs are temporally and spatially incoherent, so that speckle effects can be avoided by the application of LEDs. Besides, LED arrays are qualified due to their high optical output power. However, LED arrays have not been widely used for investigating optical effects, e.g., the Lau effect. In this paper, we propose the application of an LED array for realizing the Lau effect by taking into account the influence of the coherence properties of illumination on the Lau effect. Using spatially incoherent illumination with the LED array or a single LED, triangular distributed Lau fringes can be obtained. We apply the obtained Lau fringes in the optical lithography to produce analog structures. Compared to a single LED, the Lau fringes using the LED array have significantly higher intensities. Hence, the exposure time in the lithography process is largely reduced.

Implantation energy- and size-dependent light output of enhanced-efficiency micro-LED arrays fabricated by ion implantation.

A new process is presented for fabricating enhanced-efficiency micro-pixelated vertical-structured light-emitting diode (µVLED) arrays based on ion-implantation technology. High-resistivity selective regions are locally introduced in the n-GaN layer by ion implantation and then used as effective and non-destructive electrical isolation for realizing µVLED arrays with ultra-small pixel diameters. The implantation energy-dependent and size-dependent opto-electrical characteristics of fluorine (F-) implanted µVLED arrays are investigated systematically. The results show that the optimally designed F- ion implantation not only can achieve smaller reverse leakage current but also can realize ion-induced thermal relaxation effectively and is more suited for fabricating high-resolution µVLED arrays with higher optical output power. For the F--implanted µVLED array with pixel diameters of 10 µm, a measured output power density reaches a value of 82.1 W cm-2 at a high injection current density of 220 A cm-2, before power saturation. Further, the output power densities and external quantum efficiencies of F--implanted µVLED arrays with pixel diameters less than 10µm show strong dependences on pixel size due to the presence of defects-related SRH process. So, the high-efficiency µVLED arrays with ultra-small pixel sizes could be fabricated by an appropriately designed ion implantation combined with control of defect densities to meet the industrial requirement of microdisplay applications.

Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement

A local so-called laser-micro-annealing (LMA) conditioning technology, which is suitable for the fabrication of a large range of hybrid nano-optoelectronic devices, was applied to III-nitride-based nano-light emitting diodes (LEDs). The LEDs with a diameter of ∼100 nm were fabricated in large area arrays and designed for hybrid optoelectronic applications. The LMA process was developed for the precise local conditioning of LED nano-structures. Photoluminescence measurements reveal the enhancement of nano-LED properties, which is in very good agreement with a simple model introduced based on the reduction of the defect layer depth by the LMA process. The experimental data confirm the reduction of the defect layer depth from ∼17 nm to ∼5 nm determined. In consequence, an increase in work currents up to 40 nA at 5 V bias after the LMA procedure as well as high electroluminescence (EL) and output optical power up to 150 nW in the ∼440–445 nm emission wavelength range corresponding to ∼75% wall-plug efficiency were achieved. Additionally, the LEDs' electroluminescence intensities reach the desired values by conditioning the contact/annealed regions of individual LEDs accordingly. Furthermore, the LMA process affects the long-term stability of the electroluminescence (EL) intensity of single nano-LED devices. A study of the EL during 5000 h in the continuous wave operation testing mode revealed a moderate ∼15% decrease in the intensity in comparison to ∼50% for their non-LMA counterparts. Finally, Raman measurements indicate that the “work” temperature for nano-LED conditioned structures decreases.

Efficient and High‐Brightness Broad Area Laser Diodes Designed for High‐Temperature Operation

AbstractSemiconductor laser diodes, manufactured as single emitters or laser bars, are highly desired light sources for direct material processing as well as optical pumping of fiber and solid‐state lasers. Laser diodes feature high optical output power and efficiency, long lifetimes, low maintenance and consequently low cost of ownership. To improve the usability and extend the application spectrum of high‐power laser diodes, relaxed cooling requirements ‐‐ without compromise in laser performance and lifetime ‐‐ are required. Therefore, great development efforts are made, both in externally and internally funded research projects, to push the maximum permissible operating temperature of such semiconductor laser diodes to higher levels.

Numerical investigation on the device performance of electron blocking layer free AlInN nanowire deep ultraviolet light-emitting diodes

We report on the illustration of the first electron blocking layer (EBL) free AlInN nanowire light-emitting diodes (LEDs) operating in the deep ultraviolet (DUV) wavelength region (sub-250 nm). We have systematically analyzed the results using APSYS software and compared with simulated AlGaN nanowire DUV LEDs. From the simulation results, significant efficiency droop was observed in AlGaN based devices, attributed to the significant electron leakage. However, compared to AlGaN nanowire DUV LEDs at similar emission wavelength, the proposed single quantum well (SQW) AlInN based light-emitters offer higher internal quantum efficiency without droop up to current density of 1500 A/cm2 and high output optical power. Moreover, we find that transverse magnetic polarized emission is ∼ 5 orders stronger than transverse electric polarized emission at 238 nm wavelength. Further research shows that the performance of the AlInN DUV nanowire LEDs decreases with multiple QWs in the active region due to the presence of the non-uniform carrier distribution in the active region. This study provides important insights on the design of new type of high performance AlInN nanowire DUV LEDs, by replacing currently used AlGaN semiconductors.

Ion implantation isolation based micro-light-emitting diode device array properties

Compared with conventional light-emitting diode (LED), micro-LED has excellent photo-electric properties such as high current density, light output power density, light response frequency. It has widespread application prospects in the field of light display, optical tweezers, and visible light communication. However, dry etching inevitably leads the sidewall to be damaged, which results in the degradation of device properties. In this letter, a micro-LED array device based on F ions implantation isolation technology is presented to avoid damaging the sidewall. We systemically investigate the influence of fluorine ion implantation energy and light-emitting apertures on the photoelectric properties of the micro-LED array device by testing the current-voltage characteristic and light output power. The investigation results show that comparing with F ion 50 keV single implantation device, the reverse leakage of 50/100 keV double implantation device decreases by 8.4 times and the optical output density increases by 1.3 times. When the light-emitting apertures are different (6, 8, 10 μm respectively), the reverse leakage current remains constant, and the forward operating voltage decreasesfrom 3.3 V to 3.1 V and to 2.9 V with the increase of the aperture. Besides, the available area ratio, i.e. the ratio of actual light-emitting area to device area of single micro-LED with different light-emitting apertures are 85%, 87%, and 92%, respectively. The electrical isolation of the micro-LED array is realized by ion implantation isolation technology, and the micro-LED has some advantages over the conventional mesa etching micro-LED device, such as low reverse leakage current density, high optical output power density, and high effective light-emitting area ratio.

High-Power Long-Waveguide 1300-nm Directly Modulated DFB Laser for 45-Gb/s NRZ and 50-Gb/s PAM4

A 1300-nm high-speed high-power directly modulated distributed-feedback laser using floating feeding electrode has been demonstrated. A 5- $\mu \text{m}$ -thick benzocyclobutene was used for planarization to float a coplanar waveguide, connecting a reversed-mesa ridge waveguide of a laser. Low parasitic capacitance was then formed. A long waveguide can thus be fabricated with low roll-off at high-frequency modulation, further enabling high-output optical power. A 250- $\mu \text{m}$ -long waveguide was fabricated, leading to >28-mW optical power with linear operation and −3-dB bandwidth of 26 GHz. Furthermore, improvement in high-frequency regime and the reduction near resonance peak were found, attaining a broadband and flat frequency response at high current. A 45-Gb/s non-return-to-zero and 50-Gb/s four-level pulse amplitude modulation with 35-km fiber transmission were successfully shown through modulating high-output optical power.

4 × 56 Gb/s High Output Power Electroabsorption Modulated Laser Array With up to 7 km Fiber Transmission in L-Band

We present a novel array of electroabsorption modulated lasers as compact and low-cost single-chip solution for future 200 Gb/s transmitters. The array is designed for high optical output power with semiconductor optical amplifiers at the front side of the chip. A common InGaAlAs-MQW active layer structure allows for simple and cost-effective monolithic integration. On chip RF transmission lines are implemented to bring all electrical contacts to the rear side of the array-chip which supports packaging with short wire bonds. The array operates at four different wavelengths spanning over 7.5 nm in the L-band. Uniformity of each wavelength channel is experimentally proven regarding modulation bandwidth >30 GHz, extinction ratio >7 dB, and output power up to 8 dBm. The influence of the semiconducting optical amplifiers on signal quality is investigated by back to back bit error ratio measurements. In transmission experiments over standard single mode fiber links, the array's performance at 4 × 56 GBd NRZ and 4 × 28 GBd PAM4 is demonstrated and the arrays capability for up to 7 km transmission in case of PAM4 signaling is shown.

6-mW Single-Mode High-Speed 1550-nm Wafer-Fused VCSELs for DWDM Application

This paper presents data on wafer-fused 1550-nm vertical-cavity surface-emitting lasers (VCSELs) based on the active region and distributed Bragg reflectors (DBRs) grown by molecular beam epitaxy. VCSELs with a tunnel junction aperture diameter of 8 μm show lasing at a threshold current density j th <; 3 kA/cm 2 , an output optical power of ~4 mW, and a -3 dB bandwidth of approximately 7 GHz at a 10-mA bias current. The devices demonstrate single-mode continuous wave operation with the transverse side-mode suppression ratio (SMSR) varying in the range of 40-45 dB up to roll-over currents. The increase in mirror losses due to the etching of the top DBR makes the output optical power increase to 6 mW and causes the wallplug efficiency value to reach 20%, but SMSR remains in the range of 40-45 dB. This also makes it possible to reduce both the photon lifetime and, as a result, the effect of damping and increase the modulation bandwidth to 9 GHz. The observed open and clear eye diagrams indicate that non-return-to-zero operation is possible at bit rates of up to 30 Gbps without equalization or forward error correction. The high-output optical power and modulation performance pave the way for the dense wavelength division multiplexing application of wafer-fused 1550-nm VCSELs.

Semiconductor light sources for near- and mid-infrared spectral ranges

1550 nm band wafer-fused vertical-cavity surface-emitting lasers (VCSELs) and 5-10 μm band multi-stages quantum-cascade lasers (QCL) grown by molecular beam epitaxy (MBE) were fabricated and studied. VCSELs show high output optical power up to 6 mW in single-mode regime (SMSR > 40 dB) and open-eye diagrams at 30 Gbps of standard NRZ at 20°C. QCL heterostructures show high structural quality (fluctuations of composition and thickness < 1%). 20-μm-stripe width QCLs mounted on copper heatsinks show lasing at ∼ 6, 7.5 and 9 μm.

Compact Hybrid-Integrated 100-Gb/s TOSA Using EADFB Laser Array and AWG Multiplexer

We have developed a compact hybrid-integrated four-lane $\times 25.8$ Gb/s transmitter optical sub-assembly (TOSA) for a 100 Gb/s transceiver for 40-km transmission. The TOSA has a simple configuration in which a four-channel electroabsorption modulator integrated distributed feedback (EADFB) laser array is directly attached to the input waveguide end-faces of a silica-based arrayed waveguide grating (AWG) multiplexer. We integrated a lateral tapered spot-size converter for the EADFB laser to achieve a high optical butt coupling efficiency between the EADFB lasers array and the AWG multiplexer. We confirmed that the TOSA, which is $19.9~\text {mm} \,\times \, 6~\text {mm} \,\times \, 5.8$ mm, achieved error-free operation for a 40-km transmission with a high average optical output power of over 0.3 dBm at an operating temperature of 55 °C.

High-power, micro-integrated diode laser modules at 767 and 780 nm for portable quantum gas experiments.

We present micro-integrated diode laser modules operating at wavelengths of 767 and 780 nm for cold quantum gas experiments on potassium and rubidium. The master-oscillator-power-amplifier concept provides both narrow linewidth emission and high optical output power. With a linewidth (10 μs) below 1 MHz and an output power of up to 3 W, these modules are specifically suited for quantum optics experiments and feature the robustness required for operation at a drop tower or on-board a sounding rocket. This technology development hence paves the way toward precision quantum optics experiments in space.

Transmitter Optical Subassembly Using a Polarization Beam Combiner for 100 Gbit/s Ethernet over 40-km Transmission

A transmitter optical subassembly (TOSA) has been developed for a 100-Gbit/s Ethernet system for a long optical transmission distance over a 40-km single-mode fiber (SMF). To obtain a high optical output power and a high dynamic extinction ratio, the TOSA consists of two two-channel distributed feedback laser diode array chips integrated with electro-absorption modulators (EADFB laser array chips) with a 2 × 1 multimode interference (MMI) optical coupler and a polarization beam combiner for wavelength multiplexing. The TOSA is 8.7 mm × 28.7 mm × 6.5 mm including an LC-type receptacle. The TOSA has a twin collimator path for two EADFB laser array chips. The wavelength multiplexer consists of a mirror, a half-wavelength plate, and a polarization beam combiner. The TOSA could improve the optical output power by around 2 dB compared with a TOSA with a four-channel EADFB laser array chip and a 4 × 1 MMI optical coupler. An optical modulation amplitude of over 0.5 dBm and a mask margin exceeding 21% were obtained for each lane when all lanes were operated simultaneously with an EA modulator driving voltage of 1.5 V at a bit rate of 25.78125 Gbit/s, which fully satisfies the 100GBASE-ER4 specifications. We demonstrated error-free operation for an SMF transmission of over 40 km. Moreover, we confirmed that the TOSA was capable of error-free SMF transmission over 60 km with a power penalty of less than 1.4 dB.

A High Power InGaN‐LED on an m‐Plane GaN Substrate

SUMMARYGrowing demands for reduction of energy consumption and environmental impact are rapidly leading to the spread of solid‐state LED lighting with low power consumption and high reliability. To meet these demands, we are developing high efficiency and high power LEDs on GaN substrates. A high optical output power of 1.23 W at 1 A was obtained by using the technologies of epitaxial growth of high‐quality m‐plane InGaN on GaN substrates and low contact resistance electrodes. The m‐plane InGaN‐LED realized a quite small external‐efficiency droop of about 20% up to 500 A/cm2, while major droop occurs in polar c‐plane (0001) InGaN LEDs.

Single-mode high-power interband cascade lasers for mid-infrared absorption spectroscopy.

For high-sensitivity absorption spectroscopy, single-mode light sources capable of emitting high optical output power in the 3 to 5 µm wavelength range are vital. Here, we report on interband cascade lasers that emit 20 mW of optical power in a single spectral mode at room temperature and up to 40 mW at 0 °C using second-order laterally coupled Bragg gratings for distributed feedback. The lasers employ a double-ridge design with a narrow 3-µm-wide top ridge to confine the optical mode and a 9-µm-wide ridge for current confinement. The lasers were developed for an integrated cavity output spectroscopy instrument for stratospheric detection of hydrogen chloride at a wavelength of 3.3746 µm and emit at the target wavelength with more than 34 mW of single-mode power.