A High Power InGaN‐LED on an m‐Plane GaN Substrate

Abstract

SUMMARYGrowing demands for reduction of energy consumption and environmental impact are rapidly leading to the spread of solid‐state LED lighting with low power consumption and high reliability. To meet these demands, we are developing high efficiency and high power LEDs on GaN substrates. A high optical output power of 1.23 W at 1 A was obtained by using the technologies of epitaxial growth of high‐quality m‐plane InGaN on GaN substrates and low contact resistance electrodes. The m‐plane InGaN‐LED realized a quite small external‐efficiency droop of about 20% up to 500 A/cm2, while major droop occurs in polar c‐plane (0001) InGaN LEDs.