Abstract
This paper presents data on wafer-fused 1550-nm vertical-cavity surface-emitting lasers (VCSELs) based on the active region and distributed Bragg reflectors (DBRs) grown by molecular beam epitaxy. VCSELs with a tunnel junction aperture diameter of 8 μm show lasing at a threshold current density j th <; 3 kA/cm 2 , an output optical power of ~4 mW, and a -3 dB bandwidth of approximately 7 GHz at a 10-mA bias current. The devices demonstrate single-mode continuous wave operation with the transverse side-mode suppression ratio (SMSR) varying in the range of 40-45 dB up to roll-over currents. The increase in mirror losses due to the etching of the top DBR makes the output optical power increase to 6 mW and causes the wallplug efficiency value to reach 20%, but SMSR remains in the range of 40-45 dB. This also makes it possible to reduce both the photon lifetime and, as a result, the effect of damping and increase the modulation bandwidth to 9 GHz. The observed open and clear eye diagrams indicate that non-return-to-zero operation is possible at bit rates of up to 30 Gbps without equalization or forward error correction. The high-output optical power and modulation performance pave the way for the dense wavelength division multiplexing application of wafer-fused 1550-nm VCSELs.
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