Based on the physical mechanism of the proton single event effects (SEEs), a new analytical model is proposed to predict the proton SEE cross sections of electronic devices from the heavy ion data. The experimental data of five SRAMs from our experiments and the literature are used to test the new model, and the predicted results agree well with them. The existing models only apply to the devices with low LET threshold whose proton SEE cross sections are dominated by the p + Si reactions, and cannot predict the angular effects. Compared to them, our model applies to the devices with from low to high LET threshold whose proton SEE cross sections are dominated by the proton interactions with silicon and/or high-Z materials, and can also predict the angular effects. Moreover, for two SRAMs with low LET threshold, our model performs much better than two classic models, the BGR and microdosimetry models, in predicting their proton SEE cross sections at normal incidence. A new physical concept called the indirect ionization power of protons, which is very helpful for understanding the proton SEE mechanism, is put forward and used in our model. It is expected that the new model will be widely used in studying the proton SEE mechanism, predicting the proton SEE cross sections and on-orbit error rates of electronic devices in space.
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