High Temperature Piezoelectric Applications Research Articles

Spark plasma sintering of high-TC calcium bismuth niobate with superior piezoelectric performance

Calcium bismuth niobate (CaBi2Nb2O9) is a promising ceramic material for high-temperature piezoelectric applications due to its high Curie temperature (TC) of 940 °C. However, its practical use is limited by poor piezoelectric performance and low direct-current (DC) electrical resistivity at elevated temperatures. In this study, we introduced pseudo-tetragonal distortion into CaBi2Nb2O9 by substituting rare-earth thulium ions, which reduced domain wall energy, facilitated domain switching, and decreased the presence of oxygen vacancies. These enhancements significantly improved both the piezoelectric performance and DC electrical resistivity of the material. To further enhance piezoelectric performance, we prepared textured thulium-substituted CaBi2Nb2O9 ceramics with a Lotgering factor (f) of up to 77.4% using a two-step spark plasma sintering method. The resulting textured CaBi2Nb2O9 ceramics exhibited superior piezoelectric performance, with a piezoelectric constant d33 of 25.2 pC/N, four times higher than that of non-textured CaBi2Nb2O9. Importantly, these textured ceramics maintained excellent electrical properties at elevated temperatures, suggesting their suitability for high-temperature piezoelectric device applications.

Superior Piezoelectric Performance in Textured CaBi2Nb2O9 Ferroelectric Ceramics through Rare-Earth Gadolinium Doping and Spark Plasma Sintering.

High-performance piezoelectric ceramics with excellent thermal stability are crucial for high-temperature piezoelectric sensor applications. However, conventional fabrication processes offer limited enhancements in piezoelectric performance. In this study, we achieved a significant breakthrough in the piezoelectric performance of highly textured CaBi2Nb2O9 (CBN) ceramics by incorporating rare-earth gadolinium doping and utilizing spark plasma sintering. The resulting Ca0.97Gd0.03Bi2Nb2O9 (CBN-3Gd) ceramics exhibited superior piezoelectric properties, with a high piezoelectric constant d33 of 26 pC/N and a high Curie temperature TC of 946 °C. We employed piezoresponse force microscopy (PFM) to observe the morphology and dimensions of the ferroelectric domains, revealing a rod-shaped 3D domain configuration. This configuration facilitated polarization rotation in the textured ceramics, as analyzed using X-ray photoelectron spectroscopy (XPS) and polarization-electric field (P-E) hysteresis loops. Furthermore, the textured CBN-3Gd ceramics demonstrated exceptional thermal stability and reliability. The piezoelectric constant d33 decreased by only 11.8% over a temperature range of room temperature to 500 °C, and the DC electrical resistivity remained at 6.7 × 105 Ω cm at 600 °C. This work not only highlights the great potential of textured CBN-based ceramics for high-temperature piezoelectric sensors but also provides a viable strategy for enhancing the performance of piezoelectric materials with large aspect ratio micromorphology.

Effects of Samarium Doping on the Dielectric Properties of BaBi2Nb2O9 Aurivillius Ceramics.

This study investigates the influence of samarium (Sm3+) doping on the structural, microstructural, mechanical, and dielectric properties of BaBi2Nb2O9 (BBN) ceramics. Using the solid-state reaction method, samples of BaBi2-xSmxNb2O9 with varying concentrations of Sm (x = 0.01; 0.02; 0.04; 0.06; 0.08; 0.1) were prepared. Thermal analysis, microstructure characterization via SEM and EDS, X-ray diffraction, mechanical testing, and dielectric measurements were conducted. The results revealed that increasing Sm3+ concentration led to the formation of single-phase materials with a tetragonal structure at room temperature. Mechanical properties, such as Young's modulus and stiffness, improved with Sm doping, indicating stronger atomic bonding. Dielectric properties showed that low concentrations of Sm3+ slightly increased electrical permittivity, while higher concentrations reduced it. The presence of Sm3⁺ also affected the relaxor properties, evidenced by changes in the freezing temperature and activation energy. Overall, the study concludes that samarium doping enhances the structural and functional properties of BBN ceramics, making them promising candidates for high-temperature piezoelectric and dielectric applications. The findings provide valuable insights into tailoring ceramic materials for advanced technological applications.

Advancing piezoelectricity and excellent thermal stability: -textured 0.75BF–0.25BT lead-free ceramics for high temperature applications

There is an urgent need for piezoelectric materials possessing both high piezoelectric properties and good thermal stability to facilitate the advancement of high temperature piezoelectric devices. However, conventional strategy for enhancing piezoelectricity via chemical modifications often comes at the cost of thermal stability due to a drop in Curie temperatures. In this study, we achieved remarkable results in <001>-oriented 0.75BiFeO3–0.25BaTiO3 (0.75BF–0.25BT) lead-free textured ceramics. These textured ceramics exhibit a high Curie temperatures Tc of 552 °C, large piezoelectric coefficients d33 of 265 pC/N, and exceptional piezoelectric thermal stability, with minimal variation of 8% across temperature from 25 °C to 300 °C. Compared to randomly oriented ceramics, the piezoelectric coefficient is about 2.5 times higher, marking it as one of the highest reported value for ceramics with Tc near 550 °C. The enhanced piezoelectric properties can be ascribed to improvements in both intrinsic lattice distortions and extrinsic non-180o domain motions, while the excellent piezoelectric thermal stability is attributed to the stable domain texture. These superior properties of the studied textured 0.75BF–0.25BT ceramics position them as competitive lead-free candidates for high-temperature piezoelectric applications.

Investigation of electrical, dielectric and multiferroic properties of 0.7Bi0.95Sm0.05Fe1-xGaxO3-0.3BaTiO3 composite ceramic system for high temperature piezoelectric applications

Lead-free composite ceramics, 0.7Bi0.95Sm0.05Fe1-xGaxO3-0.3BaTiO3 (BSFGx-BT), were made using a solid-state reaction method for x = 2.5, 5, 10, 15, and 20 %. We have investigated the effects of Samarium (Sm) and Gallium (Ga) co-doping on the crystal structure, topography, spectroscopy, electrical and multiferroic characteristics of the 0.7BiFeO3-0.3BaTiO3 (0.7BFO-0.3BTO) system for piezoelectric applications. The structural results indicate that the composite ceramics exhibited rhombohedra R and tetragonal T phases characterized by R3c and P4mm space groups, respectively which was also further confirmed by X-ray Rietveld refinement pattern analysis. In dielectric behaviour study high Curie temperature of 550 °C was obtained with high temperature stability. Furthermore, the study investigated the effects of grain and grain boundaries on capacitive and resistive properties. The ceramics displayed the characteristics of the negative temperature coefficient of resistance (NTCR). It was observed that as the Ga concentration increased, the grain resistance (Rb) also increased, reaching its maximum value for x =10 %. Additionally, at higher temperatures, this composite exhibited lower electrical resistivity. Importantly, the ceramics showed the co-existence of ferromagnetic and ferroelectric behaviour with the enhanced values of remanent magnetization (Mr)= 0.043 emu/g, coercivity (Hc) = 5730 Oe and remanent polarization (Pr) = 6.07 µC/cm2, coercive field (Ec) = 6.78 kV/cm for the composition x =10 %. These findings suggest that Sm & Ga incorporated 0.7BFO-0.3BTO composite ceramics can show promising high-temperature piezoelectric applications.

A strategy for improving piezoelectricity and thermal stability of Na0.25K0.25Bi2.5Nb2O9-based piezoceramics via A/B-site co-doping

Obviously improved piezoelectricity and thermal stability of Na0.25K0.25Bi2.5Nb2O9-based ceramics have been urgently required for high-temperature piezoelectric applications. In this work, Na0.25K0.25Bi2.5-xCexNb2-yWyO9 (NKBCxNWy, x = 0.01, 0.02, 0.03, 0.04; y = 0.02) piezoceramics were developed via a traditional solid-state reaction method. The effect of Ce/W co-doping on the crystal structure and microscopic morphology was systematically investigated, along with the ferroelectric domains and electrical properties. An optimum composition of Na0.25K0.25Bi2.48Ce0.02Nb1.98W0.02O9 was achieved, which shows a high curie temperature of 670 ℃, a good piezoelectric coefficient d33 of 24.4 pC/N. The enhanced d33 stems from small domain sizes and high domain wall density in NKBC0.02NW0.02 ceramics. More importantly, the maximum d33 can remain above 80 % of the d33 (@25 ℃), even if the annealing temperature increases to 500 ℃. This work provides a simple and viable method to obtain high piezoelectric properties and excellent thermal stability in Na0.25K0.25Bi2.5Nb2O9-based ceramics.

High temperature piezoelectric performance of CaZrO3 modified BiScO3-PbTiO3 ceramics

This paper has reported a novel ternary system consisting of (1-x-y) BiScO3-xPbTiO3-yCaZrO3 (yCZ-BS-xPT). The phase structure, microstructure and electrical parameters of the new piezoelectric material at room temperature were studied in detail. The results showed that d33 increased significantly with the increase of CZ content. Combined with the results of phase structure, the MPB of 0.02CZ-BS-xPT is located at x = 0.615, which demonstrates optimum piezoelectric performance (d33 = 470 pC/N，kp = 52.0 %, εr = 1704). At the same time, the in-situ high-temperature electrical parameters were characterized systematically. It is worth noting that the in-situ electrical parameters are more attractive. When the temperature rises from room temperature to 300 °C, the kt and kp of 0.02CZ-BS-0.615 PT decreases by less than 7 % and the kp reaches the maximum of 60.7 % at 200 °C, and remains 49.8 % even at 300 °C. In addition, the in-situ d33 test of 0.005CZ-BS-0.63 PT showed that the d33 of the material increased from room temperature to 424 °C, reaching a maximum of 690 pC/N. From room temperature to 300 °C, the change rate is only 26 %, lower than that of the undoped BS-PT, which is 38.6 %. And the d33* reaches a maximum of 994 p.m./V at 200 °C. The improved in-situ piezoelectric properties of yCZ-BS-xPT ternary system makes it a great candidate for high temperature piezoelectric applications.

Effect of (Mg1/2W1/2)4+ substitution on the structure and electrical properties of Bi4Ti3O12-based high-temperature piezoceramics

Bi4Ti3-x(Mg1/2W1/2)xO12 (BTMW100x) ceramics were synthesized using a direct reaction method combined with a two-step sintering technique. The study systematically investigated the effects of B-site equivalent substitution of (Mg1/2W1/2)4+ on BTMW100x ceramics. The experimental results indicate that an appropriate amount of (Mg1/2W1/2)4+ doping effectively reduces grain thickness, enhances grain distribution uniformity, and decreases the concentration of oxygen vacancies. Consequently, these modifications lead to improved piezoelectric performance while maintaining a high Curie temperature. Notably, Bi4Ti2.95(Mg1/2W1/2)0.05O12 (BTMW5) ceramics exhibit excellent piezoelectric properties and thermal stability, with a piezoelectric coefficient of 23 pC/N and a Curie temperature of 683 °C. These findings suggest that BTMW5 ceramics are promising candidates for high-temperature piezoelectric applications.

Extremely low loss and high electrical resistivity in CaBi2Nb2O9 high-temperature piezoelectric ceramic by adding WO3

An appropriate amount of WO3 was added into CaBi2Nb2O9 high-temperature piezoelectric ceramics to improve the dense microstructure and enhance the electrical properties. A portion of W ions can be incorporated into the lattice, resulting in an increase in the lattice distortion and spontaneous polarization. As a result, the ferroelectric and piezoelectric properties of the ceramics are promoted. Additionally, reducing the concentration of oxygen vacancies can increase the resistivity of ceramics and significantly reduce the dielectric loss. The CBNO-0.375 wt% WO3 sample shows a large piezoelectric coefficient of 17.1 pC/N, a high remnant polarization of 12.60 µC/cm2, a high TC of 951°C and a large electrical resistivity of 1.86 × 106 Ω·cm at 600 °C. Moreover, the dielectric loss at 600 °C maintains a low value of 0.0076, which is one to two orders of magnitude lower than that of CBNO-based ceramics. Therefore, the method of adding WO3 to construct a CBNO ceramic provides a new strategy for high-temperature piezoelectric applications.

Impact of Gd-doping on structural and electrical properties of 0.4CaBi2Nb2O9-0.6Na0.5Bi2.5Nb2O9 piezoelectric ceramics

This paper focuses on improving the electrical properties of 0.4CaBi2Nb2O9-0.6Na0.5Bi2.5Nb2O9 piezoelectric ceramics through Gd doping. The effect of Gd3+ replacing Ca2+ and Na+ on the 0.4CaBi2Nb2O9-0.6Na0.5Bi2.5Nb2O9 (0.4CBN-0.6NBN) piezoelectric ceramics was subjected to a comprehensive examination. The introduction of Gd3+ has led to the development of a pseudo-tetragonal phase, enhancing the polarization and strengthening the piezoelectric effect. Among the 0.4CBN-0.6NBN-xGd (x = 0.00–0.05) ceramic samples, the sample at x = 0.03 that exhibits the best piezoelectric properties demonstrates a high Curie temperature of 849.7 °C, low dielectric loss (tanδ) of 1.295 % (at 550 °C), high DC resistivity (ρDC) of 1.58 × 108 Ω‧cm (at 500 °C), and a high d33 value of 17.3 pC/N. Following annealing at 800 °C, its d33 retains 94.2 % of its initial value. The improved electrical performances indicate that the Gd-doped 0.4CBN-0.6NBN ceramics hold a great deal of promise for high-temperature piezoelectric applications.

Multifunctional Experimental Studies of Sm-Ion-Influenced Pseudo-Cubic Morphotropic Phase Boundary Regional BiFeO3-xSrTiO3 Ceramics for High-Temperature Applications

In this manuscript, for the first time, the exploration of the microstructural, ferroelectric, piezoelectric, and dielectric performances are measured for Sm-ion-influenced pseudo-cubic, morphotropic phase boundary (MPB) regional 0.62BiFeO3−0.38SrTiO3:xwt%Sm2O3 (BFST:xSm) ceramics with x = 0–0.25. All the compositions maintained their pseudo-cubic MPB structural stability. The composition of BFST:0.15Sm ceramics exhibited an excellent remnant polarization (Pr) of ~52.11 μC/cm2, an enhanced d33 of 101 pC/N, and the highest relative dielectric constant (ɛr) of ~1152, which are much improved as compared to that of pure BFST ceramics. BFST:0.15Sm ceramics demonstrated a Curie temperature (TC) of 378 °C. Moreover, the composition exhibited high thermal stability for d33 72 pC/N (only a 28% decrease), even at a high temperature of 300 °C. Such outstanding outcomes make BFST:0.15Sm ceramics an ideal applicant for high-temperature piezoelectric applications.

Rare-earth praseodymium-substituted Bi5Ti3FeO15 exhibiting enhanced piezoelectric properties for high-temperature application

Owing to their exceptional piezoelectric effects, piezoelectric materials play a crucial role in high-end technologies and contribute significantly to the national economy. Bismuth layer-structured ferroelectrics (BLSFs) possess high Curie temperatures, making them a focal point of research in high-temperature piezoelectric sensor devices. However, their poor piezoelectric performance and low direct-current (DC) electrical resistivity hinder their effective deployment in high-temperature applications. To overcome these shortcomings, we employed composition optimization by partially substituting bismuth ions with rare-earth praseodymium ions. This approach enhances the piezoelectric performance and improves the DC electrical resistivity by preventing the loss of volatile bismuth ions and stabilizing the bismuth oxide layer (Bi2O2)2+, thereby reducing the concentration of oxygen vacancies. Consequently, we achieved a large piezoelectric constant d33 of 23.5 pC/N in praseodymium-substituted Bi5Ti3FeO15, which is three times higher than that of pure Bi5Ti3FeO15 (7.1 pC/N), along with a high Curie temperature TC of 778 °C. Additionally, the optimal composition of 4 mol% praseodymium-substituted Bi5Ti3FeO15 exhibits good thermal stability of electromechanical coupling characteristics up to 300 °C. This study holds promise for a wide array of high-temperature piezoelectric applications and has the potential to accelerate the development of high-temperature piezoelectric sensor technologies.

Temperature-dependent dielectric and electromechanical properties of co-modified calcium bismuth titanate (CaBi4Ti4O15) ceramics

Bismuth layer-structured ferroelectrics (BLSFs), Aurivillius-type ceramics, are of great interest primarily due to their exceptionally high Curie temperature (Tc), rendering them invaluable in various applications such as sensors, actuators, transducers, and micro-electro-mechanical systems designed for elevated temperature operations, including ferroelectric Random-Access Memory applications. This study delves into the dielectric and electromechanical properties of Cobalt-modified Calcium Bismuth Titanate (CaBi4Ti4O15, CBT) (CBT-xCo, with x = 2, 4, and 6 mol%) prepared using a conventional solid-state route followed by sintering. By incorporation of Co, insignificant structural changes were observed, disclosed by X-ray Diffraction analysis. Scanning Electron Microscope micrographs unveiled highly anisotropic grains. The sintered density measured by Archimedes method was maximum for x = 6 mol% with value of 99.1 %. A temperature-dependent dielectric study disclosed that the Curie temperature of the CBT ceramics improved with the increase in Co concentration. Notably, CBT-4Co exhibited the lowest dielectric loss of 0.0967 at 1 MHz and the highest resistivity value of 0.1975 × 105 (Ω cm) at a temperature of 775 °C. Moreover, the electromechanical coupling (kp) and mechanical quality factor (Qm) measured at elevated temperatures unveiled distinctive properties, asserting the potential of the ceramics for high-temperature piezoelectric applications up to 450 °C. CBT-4Co demonstrated the highest kp, with a negligible variation at high temperature, although Qm declined. Results confirmed that CBT-4Co stands distinguished showcasing high Tc, minimal dielectric loss, and consistent electromechanical properties making it the prime candidate for electromechanical applications spanning the gamut from room temperature to elevated temperatures.

Experimental and theoretical study of Gd2O3 added pseudo-tetragonal Bi3TaTiO9-based ceramics for ferroelectric, electric and high-temperature piezoelectric applications

The present global energy crisis, along with the development of modern technologies, has compelled the scientists to search for smart materials, which possess the multifunctional properties simultaneously. Among such materials, bismuth-layered structure ferroelectrics (BLSFs) containing a perovskite structure have demonstrated the tendency to play a vital role. Herein, we report an engineered Gd2O3 added Bi3TiTa0·5Nb0·5O9 (BTTN) based material with composition Bi3TiTa0·5Nb0·5O9:xwt%Gd2O3 (BTTN:xGd) with x = 0–0.20 ceramics to investigate the ferroelectric, electric, piezoelectric and dielectric properties of the material. Highly dense (relative density of ∼96%) BTTN:0.15Gd has shown the best merits among all other compositions with improved remnant polarization (Pr ∼ 7.86 μC/cm2), energy conversion efficiency (ƞ) of ∼63.48%, resistance of ∼2.2 × 1010 Ω and high piezoelectric co-efficient (d33 ∼ 25 pC/N) at room temperature, which are much improved than pure BTTO or BTTN ceramics. Nonetheless, ceramic has shown the stable resistivity of ∼104 Ω at 500 °C, with a stable d33 value of 22 pC/N (just 12% drop) after annealing at 600 °C. The ferroelectric to paraelectric phase transition of ceramic with the highest dielectric constant is reported at Curie temperature (TC) of 859 °C. Additionally, Density-Functional-Theory (DFT) and Density-Functional-Perturbation-Theory (DFPT) measurements are performed by employing generalized gradient approximation using the Quantum-ESPRESSO code. Structural, ferroelectric and electronic properties of BTTO, BTTN and Gd-added BTTN compounds are investigated. The calculated formation energies confirmed the thermodynamic stability of pseudo-tetragonal Gd-added BTTN compounds. Using the Berry-phase approach for piezoelectric materials, the calculated maximum polarization is 54.00 μC/cm2, which is in agreement with values obtained experimentally. Mentioned outcomes of the material clearly represent the potential of the BTTN:0.15Gd ceramic for the utilization in high-temperature piezoelectric devices.

High-Transconductance and Low-Leakage Current Single Aluminum Nitride Nanowire Field Effect Transistor

This study presents electrical transport properties of a catalyst-free grown single aluminum nitride nanowire field effect transistor (AlNNW-FET) exhibiting a very high transconductance of 26.9 pS, high on/off current ratio of 795.9, high conductivity of 9.8 x 10-4 Ω-1.cm-1, and a very low leakage current of 10 pA. The conductivity of AlN nanowire is two orders of magnitude higher than the reported studies. The AlNNW-FET reveals a dominant p-type conductivity. The p-type conductivity can be attributed to aluminum vacancies and complexes composed of Al vacancies and oxygen impurities. In consequence, the fabricated AlNNW-FET with high-performance, cost-effectiveness, and high-power efficiency is very well suited for use in low power and high temperature nanoelectronic and piezoelectric sensor applications, as well as integrated electro-optical devices including optomechanical devices and pyroelectric photodetectors.

Lead zirconate titanate-based ceramics with high piezoelectricity and broad usage temperature range

Piezoceramics have long faced the challenge of achieving both a high Curie temperature (TC) and outstanding electrical properties due to thermal depolarization. To address this, we introduced a novel two-step synergistic strategy in synthesizing lead zirconate titanate (PZT)-based x[(1–y)BiYO3-yFe2O3)]-(1–x)Pb(Zr0.53Ti0.47)O3 [abbreviated as xBYF(y)-PZT] ceramics, where co-doping of Fe2O3 and BiYO3 significantly influences dielectric and piezoelectric properties. Our breakthrough composition, 0.01BYF(0.6)-PZT, showcases a unique coexistence of rhombohedral and tetragonal phases. It boasts impressive figures, including a piezoelectric coefficient d33 of 467 pC N−1, a TC of 381 °C, an electromechanical coupling coefficient (kp) of 68%, and a coercive field (Ec) of 12 kV cm−1, displaying both “softening” and “hardening” characteristics. In-depth analysis with in-situ X-ray diffraction and transmission electron microscopy unveils the critical role of multiphase coexistence and local heterostructures in enhancing piezoelectric responses through synergistic effects. Notably, this innovative composition with x = 0.01 showcases exceptional thermal stability across a broad operating temperature range (30–350 °C) and delivers an in-situ d33 value of 790 pC N−1. These compelling findings underscore the potential of BYF-modified PZT ceramics as promising candidates for high-temperature piezoelectric applications.

Ultra-high Curie temperature transparent piezoelectric Bi doped Ca2Nb2O7 single crystals

Ca2Nb2O7 is a promising material for high-temperature piezoelectric applications due to its ultra-high Curie temperature, which makes it a suitable candidate for use in harsh environments. However, their piezoelectric performance needs improvement. Here, through chemical engineering methods, we have successfully grown Bi3+ doped Ca2Nb2O7 single crystals using the optical floating zone technique. The Ca1.94Bi0.06Nb2O7 single crystals achieved better high-temperature stability, transparency and a higher piezoelectric constant of 12.8 pC/N at 298 K and 20.0 pC/N at 660 K. In addition to the dopant effects, mechanisms for enhancing the piezoelectric properties of perovskite-like layer structure (PLS) materials have been identified, highlighting the significant contribution of the NbO6 octahedron and interlayer ions. These findings offers valuable insights into improving the performance of PLS materials, which is crucial for promoting their practical applications as high-temperature lead-free piezoelectric materials.

Improved dielectric and piezoelectric thermal stability by chemical homogenization in CuO-modified 0.75BiFeO3-0.25BaTiO3 piezoceramics

0.75BiFeO3-0.25BaTiO3 lead-free ceramics have been considered promising candidates for high-temperature piezoelectric applications. However, their dielectric and piezoelectric properties severely degrade with increasing temperature. In this work, improved dielectric and piezoelectric thermal stability was obtained in CuO-modified 0.75BiFeO3-0.25BaTiO3 ceramics. CuO addition increases the volume fraction of the rhombohedral phase in the 0.75BiFeO3- 0.25BaTiO3 ceramics and makes the chemical heterogeneity disappear. The dielectric and piezoelectric anomalies are eliminated near 300 °C and return with CuO additions, and the temperature degradations of the dielectric constant and piezoelectric coefficient of 0.75BiFeO3-0.25BaTiO3 ceramics with 0.008 mol CuO in the range from 25 to 400 °C decrease by 85% and 60%, respectively. Furthermore, the depoling temperature and piezoelectric coefficient of 0.75BiFeO3-0.25BaTiO3 ceramics with 0.008 mol CuO are 570 °C and 131 pC/N, respectively. These results indicate that CuO addition is an effective approach to improve both the dielectric and piezoelectric thermal stability of 0.75BiFeO3-0.25BaTiO3 ceramics.

Phase transition behavior and electrical properties of (Bi0.97Sm0.03)ScO3-PbTiO3 textured ceramics MPB-modified by BaTiO3 templates for high temperature piezoelectric device applications

BaTiO3 (BT)-templated (1-x) (Bi0.97Sm0.03)ScO3-xPbTiO3 [(1-x)BSS-xPT] (0.60≤x≤0.64) ceramics were evaluated as to their phase transition behavior and electrical properties for high temperature piezoelectric devices. The morphotropic phase boundary (MPB) of rhombohedral and tetragonal phases was obtained for template-free 0.36BSS-0.64PT ceramic. However, the addition of tetragonal BT to 0.36BSS-0.64PT resulted in a highly textured microstructure but degraded piezoelectric properties due to a shift of tetragonal-rich MPB. Compositional modification of 4 vol% BT-templated (1-x)BSS-xPT can restore good piezoelectric performance by enriching the BSS phase. Especially, the textured 0.38BSS-0.62PT ceramic with highly preferred (100) orientation exhibited excellent piezoelectric properties of d33 (719 pC/N), kp (61.8%), Qm (14), and g33 (45 × 10−3 Vm/N). In addition, the relaxor-like textured ceramic, having a high depolarization temperature of 373 °C, is highly promising for high temperature piezoelectric devices.

Achieving significantly enhanced piezoelectricity in aurivillius ceramics by improving initial polarization and dielectric breakdown strength

In this work, the neglected role of the dielectric breakdown strength (BDS) in piezoelectricity of bismuth layer-structured ferroelectrics (BLSFs) is revealed, enhanced initial polarization and BDS work together to improve the piezoelectricity of CaBi4Ti4O15 (CBT) ceramics via Li/Bi co-substitution. The experimental work, first-principles calculations and finite element simulation are carried out to investigate the effect of Li/Bi co-substitution in depth. The stronger spontaneous polarization (Ps) from the lattice distortion and the more favorable domain switching from the improved grain growth both contribute to an enhanced initial polarization. Besides, the changed grain-scale microstructure improves the hardness and inhibits the local discharge, the higher resistivity related to strong defect dipoles suppresses the heat generation during the poling process, all resulting in an increase of BDS by about 100%, and allowing more domains to align. This work demonstrates an effective strategy to develop BLSFs with enhanced piezoelectricity for high temperature piezoelectric applications.