High-temperature Growth Technique Research Articles

Dielectric properties of low-temperature-grown homoepitaxial (−201) β-Ga2O3 thin film by atmospheric pressure plasma-assisted CVD

The atmospheric pressure plasma-assisted chemical vapor deposition technique has successfully demonstrated unintentionally doped (UID) Ga2O3 growth at 350 °C. This technique allows independent and homogeneous multiple nuclei growth of Ga2O3, leading to three-dimensional grain growth at a rate of ⁓0.17 μm/h. In the study of Schottky barrier diodes, the Schottky-like current (I)–voltage (V) response shows typical behavior on Ga2O3. This is a good sign at an early stage of device development on the grown sample. The extracted barrier height of ⁓2.20 eV was higher, which may be due to unintentional PtOx formation on the Ga2O3 surface. Furthermore, the extracted capacitance (C)–voltage (V) depth profiling of the effective impurity concentration was nearly flat, ⁓1.5 × 1017 cm−3, in the unintentionally doped grown film. The effective impurity concentration is comparable to the UID carrier concentration of epitaxial films fabricated using the high temperature growth technique. Therefore, low-temperature-grown homoepitaxial Ga2O3 thin films grown by atmospheric pressure-plasma-assisted chemical vapor deposition can be used in future Ga2O3-based power device applications.

Controlled Growth of Indium Selenides by High-Pressure and High-Temperature Method

The controlled growth of indium selenides has attracted considerable research interests in condensed matter physics and materials science yet remains a challenge due to the complexity of the indium–selenium phase diagram. Here, we demonstrate the successful growth of indium selenides in a controllable manner using the high-pressure and high-temperature growth technique. The γ-InSe and α-In2Se3 crystals with completely different stoichiometries and stacking manner of atomic layers have been controlled grown by subtle tuning growth temperature, duration time, and growth pressure. The as-grown γ-InSe crystal features a semiconducting property with a prominent photoluminescence peak of ∼1.23 eV, while the α-In2Se3 crystal is ferroelectric. Our findings could lead to a surge of interest in the development of the controlled growth of high-quality van der Waal crystals using the high-pressure and high-temperature growth technique and will open perspectives for further investigation of fascinating properties and potential practical application of van der Waal crystals.

Laser MBE-grown CoFeB epitaxial layers on MgO: Surface morphology, crystal structure, and magnetic properties

Epitaxial layers of CoFeB were grown on MgO by means of laser molecular beam epitaxy using $\mathrm{C}{\mathrm{o}}_{40}\mathrm{F}{\mathrm{e}}_{40}{\mathrm{B}}_{20}$ target. The growth was combined with in situ structural characterization by three-dimensional reciprocal space mapping obtained from reflection high energy electron diffraction (RHEED) data. High-temperature single stage growth regime was adopted to fabricate CoFeB layers. As confirmed by the atomic force microscopy, the surface of CoFeB layers consists of closely spaced nanometer sized islands with dimensions dependent on the growth temperature. As shown by RHEED and XRD analysis, the CoFeB layers grown at high-temperature on MgO(001) possess body centered cubic (bcc) crystal structure with the lattice constant $a=2.87\phantom{\rule{0.16em}{0ex}}\AA{}$ close to that of the $\mathrm{C}{\mathrm{o}}_{75}\mathrm{F}{\mathrm{e}}_{25}$ alloy. It was further shown that following the same high-temperature growth technique the MgO/CoFeB/MgO(001) heterostructures can be fabricated with top and bottom MgO layers of the same crystallographic orientation. The CoFeB layers were also grown on the GaN(0001) substrates using MgO(111) as a buffer layer. In this case, the CoFeB layers crystallize in bcc crystal structure with the (111) axis perpendicular to the substrate surface. The magnetic properties of the CoFeB/MgO (001) heterostructures have been investigated by measuring magnetization curves with a vibrating sample magnetometer as well as by performing magneto-optical Kerr effect (MOKE) and ferromagnetic resonance (FMR) studies. FMR spectra were obtained for the variety of the magnetic field directions and typically consisted of a single relatively narrow resonance line. The magnetization orientations and the resonance conditions were calculated in the framework of a standard magnetic energy minimization procedure involving a single ${K}_{1\mathrm{c}}$ cubic term for the magnetocrystalline anisotropy. This allows a fairly accurate description of the angular dependences of the resonance fields---both in-plane and out-of-plane. It was shown that CoFeB layers exhibit in-plane fourth-order magnetic anisotropy. A two-step magnetization reversal model has been adopted for the CoFeB layers based on the VSM measurement analysis. Magnetization reversal studies performed by polar MOKE indicate that the magnetization lies in-plane in absence of magnetic field. Observed magnetic field dependences of reflected light ellipticity in geometry of longitudinal Kerr effect give convincing evidence for contribution of quadratic in magnetization terms in the dielectric tensor and clearly show the in-plane magnetization rotation.

InGaAs channel MOSFET with self‐aligned source/drain MBE regrowth technology

AbstractInGaAs is a promising alternative channel material to Si for sub‐22 nm node technology because of its low electron effective mass (m*) hence high electron velocities. We report a gate‐first MOSFET process with self‐aligned source/drain formation using non‐selective MBE re‐growth, suitable for realizing high performance scaled III‐V MOSFETs. A W/Cr/SiO2 gate stack was defined on thin (4 nm/2.5 nm) InGaAs/InP channel by an alternating selective dry etch technique. A 5 nm Al2O3 layer was used as gate dielectric. An InAlAs bottom barrier provided vertical confinement of the channel. An in‐situ H cleaning of the wafer leaves an epi‐ready surface suitable for MBE or MOCVD regrowth.Source/Drain region were defined by non‐selective MBE regrowth and in situ molybdenum contacts. First generation of devices fabricated using this process showed extremely low drive current of 2 μA/μm. The drive current was limited by an extremely high source resistance. A regrowth gap between source/drain and gate was the cause for high source resistance. The gap in the regrowth was because of low growth temperature (400 °C). A modified high temperature growth technique resolved the problem. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Comparison of the Mid-Infrared Magneto-Optical Response of Ga1−x Mn x As Films Grown by Molecular Beam Epitaxy and Ion Implantation and Pulsed Laser Melting

We have carried out mid-infrared magneto-optical studies of Ga1−xMnxAs films grown using two different techniques: low temperature molecular beam epitaxy (LT-MBE) and a combination of ion-implantation and pulsed laser melting (II-PLM). The second method is a high temperature growth technique which minimizes the formation of Mn interstitials. Both samples exhibit a ferromagnetic response with similar Curie temperatures (TC). The samples show qualitatively similar behavior in below bandgap Faraday and Kerr measurements, which probe the valence band structure of the materials. This suggests that the same mid-infrared transitions are dominating the magneto-optical response of both samples.