Abstract
The controlled growth of indium selenides has attracted considerable research interests in condensed matter physics and materials science yet remains a challenge due to the complexity of the indium–selenium phase diagram. Here, we demonstrate the successful growth of indium selenides in a controllable manner using the high-pressure and high-temperature growth technique. The γ-InSe and α-In2Se3 crystals with completely different stoichiometries and stacking manner of atomic layers have been controlled grown by subtle tuning growth temperature, duration time, and growth pressure. The as-grown γ-InSe crystal features a semiconducting property with a prominent photoluminescence peak of ∼1.23 eV, while the α-In2Se3 crystal is ferroelectric. Our findings could lead to a surge of interest in the development of the controlled growth of high-quality van der Waal crystals using the high-pressure and high-temperature growth technique and will open perspectives for further investigation of fascinating properties and potential practical application of van der Waal crystals.
Highlights
Indium selenides (InxSey) are group III–VI semiconductors with kinds of In and Se stoichiometries and several structural modifications, for example, InSe with β, ε, and γ phases, and In2Se3 with α, β, γ, and σ phases (Butler et al, 2013; Bandurin et al, 2017; Balakrishnan et al, 2018)
The crystalline InxSey with mixed stoichiometries of 2:3 and 1:1 is obtained at 250°C with duration time of 20 min and precursor In/ Se ratio of 2.1:3. Such a mixing behavior might be due to the nonuniform reaction under the relatively low growth temperature of 250°C, which is very close to the melting points of In (156.6°C) and Se (221°C)
The present results are in principle consistent with the provisional equilibrium In-Se binary phase diagram (Lu et al, 1999), in which In2Se3 crystals are preferred to be formed at relatively high temperatures
Summary
Indium selenides (InxSey) are group III–VI semiconductors with kinds of In and Se stoichiometries and several structural modifications, for example, InSe with β, ε, and γ phases, and In2Se3 with α, β, γ, and σ phases (Butler et al, 2013; Bandurin et al, 2017; Balakrishnan et al, 2018). The γ-InSe consists of quadruple Se-In-In-Se layers in the rhombohedral stacking behavior (Figure 1A), while the α-In2Se3 is composed of Se-In-Se-In-Se quintuple layers arranged in a rhombohedral (R3m) crystal structure (Figure 1B) (Butler et al, 2013; Bandurin et al, 2017; Balakrishnan et al, 2018; Tang et al, 2019). Such different stacking behaviors of Controlled Growth of Indium Selenides
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