Abstract
We have carried out mid-infrared magneto-optical studies of Ga1−xMnxAs films grown using two different techniques: low temperature molecular beam epitaxy (LT-MBE) and a combination of ion-implantation and pulsed laser melting (II-PLM). The second method is a high temperature growth technique which minimizes the formation of Mn interstitials. Both samples exhibit a ferromagnetic response with similar Curie temperatures (TC). The samples show qualitatively similar behavior in below bandgap Faraday and Kerr measurements, which probe the valence band structure of the materials. This suggests that the same mid-infrared transitions are dominating the magneto-optical response of both samples.
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