Crack propagation in Si 3N 4 at elevated temperatures was investigated using controlled surface flaws. Crack growth was generally slower under cyclic than static loading conditions. Concomitantly, there was a tendency for crack growth rate to initially decelerate despite an increasing driving force, exhibiting the so-called short-crack behavior. This tendency became more pronounced at higher temperatures, lower stress intensity factors, and larger cyclic stress variations. A corresponding transition in the crack profile, from a sharp to a blunt crack, was observed. These phenomena are attributed to evolutions of crack-wake shielding. Specifically, with rising temperature and stress cycling, grain fraction is lowered, triple points are separated and massive grain pullout is triggered. This mode of pullout mechanism is qualitatively distinct from that operating at lower temperatures, and the transition is believed to occur when the slip length of the grain boundary reaches the average half-length of the grain. This picture is supported by a fracture mechanics estimation of crack growth rate, crack opening displacement and characteristic length of the R-curve based on the pullout mechanism.