High Rectification Ratio Research Articles

Negative Dielectric Constant in Novel Structure of PA-GO Composite /MnO2/Fe3O4/n-Si

This manuscript presents a novel structure of PA-GO composite with MnO2/Fe3O4/n-Si. This assembly was arranged by simple technique. It was examined by scanning electron microscope (SEM), X-ray diffraction (XRD) and Raman spectroscopy (RS). The novelty here is that the negative dielectric constant appeared for all considered voltages at the spot point frequencies 1000, 100 and 10 Hz, in spite of all literature proved that the dielectric constant has negative values only at higher frequencies (almost above 1 MHz). Also, the dielectric loss is negative at the higher frequencies at all considered voltages and temperatures. This structure has low dielectric loss tangent (tan δ ranging between 4 to 50) for all investigated voltages and temperatures and also has high rectification ratio reach to 1200 times, and high Rj. The electrical properties of this structure were examined by conventional/dlnI, Nord and Cheung method.

β-Ga2O3 van der Waals p-n homojunction

The van der Waals (vdW) p-n junctions are crucial to develop multifunctional and high-performance electronic and optoelectronic devices. The asymmetric doping effect in wide-bandgap (WBG) semiconductors poses a fundamental obstacle for fabricating the vdW p-n homojunction and impedes the development of full WBG semiconductors-based bipolar devices. In this study, we demonstrate the β-Ga2O3 vdW p-n homojunctions with 2.0 nm-thick vdW gap, 2.6 eV built-in potential and 1.5 μm-wide depletion region, via combining quasi-two-dimensional n-type β-Ga2O3 nanosheets with p-type β-Ga2O3 films. Various tunneling transports including direct tunneling, Fowler-Nordheim tunneling, and exciton-assisted tunnelling are observed and explored in detail. The β-Ga2O3 vdW p-n homojunction diodes possess high forward current density (3.0 × 10−3 A/cm2), extremely-low reverse leakage current density (3.0 × 10−9 A/cm2), high rectification ratio (106 under dark and 107 under illumination), high photoresponsivity (13.4 A/W) and detectivity (9.38 × 1013 Jones) at 10 V bias under 250 nm illumination, and narrowband detection for the deep-ultraviolet solar-blind spectral region. This work lays the foundation for β-Ga2O3 homogeneous bipolar vdW devices and paves the way to advance the next-generation electronic and optoelectronic multifunctional devices based on the vdW integration.

Synthesis and characteristics of a monocrystalline GaAs/β-Ga2O3p-n heterojunction

Beta phase-gallium oxide (β-Ga2O3) is an emerging ultrawide bandgap semiconductor but lacks efficient p-type doping, which hinders development of high-performance bipolar heterojunction devices. This study introduces the synthesis and characterization of a monocrystalline GaAs/β-Ga2O3p-n heterojunction, employing advanced semiconductor grafting technology. The heterojunction was innovatively fabricated by grafting a p-type GaAs single crystal nanomembrane to an Al2O3-coated n-type β-Ga2O3 epitaxial substrate. The synthesized heterojunction was comprehensively characterized. The band alignment of grafted GaAs/β-Ga2O3p-n heterojunction was experimentally constructed through X-ray photoelectron spectroscopy (XPS), and the result is in accordance with the theorical prediction based on the electron affinity rule. The resulting GaAs/β-Ga2O3p-n diodes built on this heterojunction exhibit remarkable performance metrics, including an ideality factor of 1.23, a high rectification ratio of 8.04 × 109 at ± 4 V, and a turn on voltage at 2.35 V. Furthermore, at + 5 V, the diode displays a large current density of 2500 A/cm2 along with a low ON resistance of 2 mΩ∙cm2. This study marks the first successful demonstration of a high-quality grafted GaAs/β-Ga2O3p-n heterojunction, establishing a critical building block for the further development of bipolar Ga2O3-based device applications such as diodes, transistors, and thyristors.

Photodetection Enhancement of PdSe2/ReSe2 Van der Waals Heterostructure Field‐Effect Transistors: A Density Functional Theory‐Guided Approach

AbstractThe fabrication of van der Waals heterostructures (vdWHs) has drawn considerable interest because of their wide range of functionalities. Herein, a novel PdSe2/ReSe2 vdWHs with gate‐tunable rectification behavior and excellent broadband photodetection characteristics is presented. The application of the gate bias substantially enhances the rectification behavior, with the highest rectification ratio (≈3.13 × 103) observed at gate voltage Vg = −60 V. The density functional theory calculations demonstrate the direct and indirect bandgap behavior of PdSe2 and ReSe2 in the monolayer structure, respectively. Additionally, the PdSe2/ReSe2 heterojunction displays a strong photo‐response in the near‐infrared region and achieves a high photoresponsivity, an excellent external quantum efficiency, and rapid rise and decay times of 1.7 × 103 A W−1, 4.05 × 103, and 5 and 20 ms, respectively. Furthermore, the device exhibits a remarkable detectivity of ≈3.5 × 1012 Jones. The findings hold great potential for advancing the fabrication of multifunctional vdW heterostructure devices.

InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer

In this Letter, we proposed a robust InGaAs/Si bonded heterojunction by polycrystalline Si (poly-Si) and amorphous interlayers. The ultra-thin amorphous layer is induced through Ar plasma treatment. The synergism of poly-Si and amorphous interlayers effectively blocks the lattice mismatch and releases the interfacial thermal stress. A bubble- and defect-free bonding interface is achieved even if after annealing at 500 °C, demonstrating compatibility with high-temperature processes. The heavily doped poly-Si interlayer sweeps the electric field from the poly-Si layer and concentrates in the amorphous layer, rendering electron tunneling through the bonding interface and reducing the interfacial recombination rates. As a result, the bonded InGaAs/Si PIN photodetector harvests a saturated and low dark density of 0.26 mA/cm2 at −1 V and a high rectification ratio of 3.5 × 105 at ±1 V. Additionally, the non-optimized device achieves a high responsivity of 0.82 A/W at 1550 nm. These results indicate that the proposed bonding strategy provides a viable route to tackle the electronic, optical, and thermal barriers of integrating single-crystal InGaAs into Si platforms. This enables the photodetection of InGaAs/Si devices with a high signal-to-noise ratio.

Current transport mechanism of lateral Schottky barrier diodes on β-Ga2O3/SiC structure with atomic level interface

Heterogeneous integration of β-Ga2O3 on highly thermal conductive SiC substrate by the ion-cutting technique is an effective solution to break the heat-dissipation bottleneck of β-Ga2O3 power electronics. In order to acquire high-quality β-Ga2O3 materials on SiC substrates, it is essential to understand the influence of the ion-cutting process on the current transport in β-Ga2O3 devices and to further optimize the electrical characteristics of the exfoliated β-Ga2O3 materials. In this work, the high quality of β-Ga2O3/SiC structure was constructed by the ion-cutting process, in which an amorphous layer of only 1.2 nm was formed between β-Ga2O3 and SiC. The current transport characteristics of Au/Pt/Ni/β-Ga2O3 Schottky barrier diodes (SBDs) on SiC were systematically investigated. β-Ga2O3 SBDs with a high rectification ratio of 108 were realized on a heterogeneous β-Ga2O3 on-SiC (GaOSiC) substrate. The net carrier concentration of the β-Ga2O3 thin film for GaOSiC substrate was down to about 8% leading to a significantly higher resistivity, compared to the β-Ga2O3 donor wafer, which is attributed to the increase in acceptor-type implantation defects during the ion-cutting process. Furthermore, temperature-dependent current–voltage characteristics suggested that the reverse leakage current was limited by the thermionic emission at a low electric field, while at a high electric field, it was dominated by the Poole–Frenkel emission from E3 deep donors caused by the implantation-induced GaO antisite defects. These results would advance the development of β-Ga2O3 power devices on high thermal conductivity substrate fabricated by ion-cutting technique.

Wafer-Scale Carbon Nanotubes Diodes Based on Dielectric-Induced Electrostatic Doping.

Diodes based on p-n junctions are fundamental building blocks for numerous circuits, including rectifiers, photovoltaic cells, light-emitting diodes (LEDs), and photodetectors. However, conventional doping techniques to form p- or n-type semiconductors introduce impurities that lead to Coulomb scattering. When it comes to low-dimensional materials, controllable and stable doping is challenging due to the feature of atomic thickness. Here, by selectively depositing dielectric layers of Y2O3 and AlN, direct formation of wafer-scale carbon-nanotube (CNT) diodes are demonstrated with high yield and spatial controllability. It is found that the oxygen interstitials in Y2O3, and the oxygen vacancy together with Al-Al bond in AlN/Y2O3 electrostatically modulate the intrinsic CNTs channel, which leads to p- and n-type conductance, respectively. These CNTs diodes exhibit a high rectification ratio (>104) and gate-tunable rectification behavior. Based on these results, we demonstrate the applicability of the diodes in electrostatic discharge (ESD) protection and photodetection.

A Long Life Moisture-Enabled Electric Generator Based on Ionic Diode Rectification and Electrode Chemistry Regulation.

Considerable efforts have recently been made to augment the power density of moisture-enabled electric generators. However, due to the unsustainable ion/water molecule concentration gradients, the ion-directed transport gradually diminishes, which largely affects the operating lifetime and energy efficiency of generators. This work introduces an electrode chemistry regulation strategy into the ionic diode-type energy conversion structure, which demonstrates 1240h power generation in ambient humidity. The electrode chemical regulation can be achieved by addingCl-. The purpose is to destroy the passivation film on the electrode interface and provide a continuous path for ion-electron coupling conduction. Moreover, this device simultaneously satisfies the requirements of fast trapping of moisture molecules, high rectification ratio transport of ions, and sustained ion-to-electron current conversion. A single device can deliver an open-circuit voltage of about 1V and a peak short-circuit current density of 350µA cm-2. Finally, the first-principle calculations are carried out to reveal the mechanism by which the electrode surface chemistry affects the power generation performance.

P-type π-conjugated BTPDS-8 organic molecule for broadband hybrid photodetector with organic/inorganic heterostructure

A novel p-type π-conjugated organic small molecule 3,7-bis(4-([2,2′:6′,2''-terpyridin]−4′-yl)phenyl)− 5H-dibenzo[a,d][7]annulen-5-one (named as BTPDS-8) in which terpyridinyl units are linked to the dibenzosuberenone backbone by a phenyl bridge was successfully synthesized in four reaction steps. The synthesized organic material BTPDS-8 was fully characterized using 1H NMR, 13C NMR, IR, and HRMS spectroscopy techniques. Then, eleven BTPDS-8/Si heterojunctions were fabricated having non-linear current-voltage characteristics. Among these devices, the one with the highest rectification ratio (with 8.43 ×105) was analyzed in detail under UV and IR light as well as different intensities of visible light. Experimental results showed that the device has good photoresponse performance under any light source in addition to self-driven mode characteristics. It was observed that the saturation current and barrier height increased, and the ideality factor decreased, depending on the light intensity under visible light. Photocurrent, on/off ratio, responsivity, detectivity and NPDR were calculated from the optical measurements. The broad spectrum photoresponse of the BTPDS-8/Si heterojunction from UV to IR demonstrated that the device has the potential to be used as a broadband photodetector. The best performance was obtained under 850 nm IR light. The detectivity values under IR light were 1.22 × 1010 Jones and 7.53 × 109 Jones for V= 0.0 volts (self-driven mode) and V= −2.0 volts, respectively.

Interface Engineering Enables Multilevel Resistive Switching in Ultra-Low-Power Chemobrionic Copper Silicate.

Memristor is assuming prominence due to its exceptionally low power consumption, adaptable, and parallel signal processing capabilities that address the limitations of the von Neumann architecture to meet the growing demand for advanced technologies such as artificial intelligence, Internet of Things (IoTs), and neuromorphic computation. In this work, we demonstrate resistive switching in copper silicate-based hollow tube-forming self-organized membrane structures belonging to the category of chemobrionics or chemical gardens to demonstrate cost-effective and highly efficient memristor devices. The device architecture is configured as ITO/PEDOT:PSS/active layer (copper silicate)/PMMA/Ag, an arrangement that serves to stabilize current-voltage hysteresis and exhibit a low SET voltage ∼0.2 V with a 0.8 nJ power consumption while manifesting robust data endurance and multilevel resistive switching. The inherent self-rectifying behavior, characterized by a high rectification ratio of 60, underscores the potential utility of these devices across a spectrum of electronic applications. To emulate the functionality of biological synapses, fundamental synaptic characteristics are assessed, including paired-pulse facilitation (PPF) and potentiation and depression (P&D). We validate the potential of copper silicate chemical garden-based memristor devices for applications that require real-time synaptic processing. Importantly, the fabrication of these devices was accomplished through a comprehensive solution-based, low-temperature process conducted under ambient environmental conditions, obviating the need for specialized glovebox facilities.

Flexible switch matrix addressable electrode arrays with organic electrochemical transistor and pn diode technology

Due to their effective ionic-to-electronic signal conversion and mechanical flexibility, organic neural implants hold considerable promise for biocompatible neural interfaces. Current approaches are, however, primarily limited to passive electrodes due to a lack of circuit components to realize complex active circuits at the front-end. Here, we introduce a p-n organic electrochemical diode using complementary p- and n-type conducting polymer films embedded in a 15-μm -diameter vertical stack. Leveraging the efficient motion of encapsulated cations inside this polymer stack and the opposite doping mechanisms of the constituent polymers, we demonstrate high current rectification ratios (105\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${10}^{5}$$\\end{document}) and fast switching speeds (230 μs). We integrate p-n organic electrochemical diodes with organic electrochemical transistors in the front-end pixel of a recording array. This configuration facilitates the access of organic electrochemical transistor output currents within a large network operating in the same electrolyte, while minimizing crosstalk from neighboring elements due to minimized reverse-biased leakage. Furthermore, we use these devices to fabricate time-division-multiplexed amplifier arrays. Lastly, we show that, when fabricated in a shank format, this technology enables the multiplexing of amplified local field potentials directly in the active recording pixel (26-μm diameter) in a minimally invasive form factor with shank cross-sectional dimensions of only 50×8 μm2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${\\mu m}^{2}$$\\end{document}.

Defect Engineering of 2D Semiconductors for Dual Control of Emission and Carrier Polarity.

2D transition metal dichalcogenides (TMDCs) are considered as promising materials in post-Moore technology. However, the low photoluminescence quantum yields (PLQY) and single carrier polarity due to the inevitable defects during material preparation are great obstacles to their practical applications. Here, an extraordinary defect engineering strategy is reported based on first-principles calculations and realize it experimentally on WS2 monolayers by doping with IIIA atoms. The doped samples with large sizes possess both giant PLQY enhancement and effective carrier polarity modulation. Surprisingly, the high PL emission maintained even after one year under ambient environment. Moreover, the constructed p-n homojunctions shows high rectification ratio (≈2200), ultrafast response times and excellent stability. Meanwhile, the doping strategy is universally applicable to other TMDCs and dopants. This smart defect engineering strategy not only provides a general scheme to eliminate the negative influence of defects, but also utilize them to achieve desired optoelectronic properties for multifunctional applications.

Highly responsive self-driven broadband hybrid photodetector with high detectivity and on/off ratio based on Hibiscus sabdariffa

A Hibiscus sabdariffa (HBS)/n-Si hybrid photodetector was fabricated and it was observed that the device has a high rectification ratio of 10.2 × 104 in dark and superior photoresponse at different intensities of visible light in addition to UV and IR lights. The non-linear response to light intensity in visible light was attributed to phase change effects and the presence of traps, which are the result of the hibiscus sabdariffa’ response to light. The responsivity at 850 nm reaches 1.16 A W−1 (at V = −2.0 V) and a high specific detectivity of 2.0 × 1012 Jones (for self-driven mode) with an external quantum efficiency of 411% was obtained. In addition, in self-driven mode of UV and IR lights, the highest on/off ratio and NPDR values reached ∼105 and ∼109 W−1 levels, respectively. Moreover, HBS/n-Si hybrid broad-band photodetector showed long-term stability (40 days) without encapsulation both in the dark and under the light.

A Guide for Cross‐Linking Modulation: The Record Rectifying Ratio of Hydrogel‐Based Ultra Flexible Ionic Diodes

AbstractThis study focuses on the effect of cross‐linking mechanisms in the development of hydrogel‐based flexible ionic diodes (HBIDs) with desirable features for ionic devices. The research explores one p‐type hydrogel and a series of n‐type hydrogels with varying cross‐linking ratios, investigating their ion‐conducting properties, morphological and electronic structures, as well as the performance of flexible HBIDs constructed using these hydrogels. The results indicate that the cross‐linking ratio significantly influences ionic conductivity, bulk resistance, and capacitance. Additionally, the HBIDs' ability to maintain their electrical performance under repeated mechanical bending is studied concerning the cross‐linking ratio. Notably, the HBID with the highest cross‐linking ratio (HG/12) exhibits relatively higher current densities (up to 8.9 mA cm−2) and considerably higher rectification ratios (up to 1269). Even after 500 cycles of deformation, the HG/12 diode maintained a rectification ratio of 987, demonstrating its excellent performance and durability.

Van der Waals heterostructure of Bi2O2Se/MoTe2 for high-performance multifunctional devices

Two-dimensional van der Waals heterostructures exhibit distinctive electronic and optoelectronic properties, making them promising structures for constructing advanced multifunctional devices. However, devices based on conventional charge-carrier transport mechanisms often perform only a single function, which limits its integration and performance. Here, we present a vertical van der Waals heterostructure made of Bi2O2Se and MoTe2, allowing it to act as high-performance backward diode, forward diode, photodetector and photovoltaic device at various working conditions. The applications are enabled by band-alignment switching between p–n heterostructure controlled by minority carrier diffusion and n–n heterostructure governed by the thermionic emission and tunneling-mediated processes. As a backward diode, the device displays a high reverse rectification ratio of 5.0 × 104. As a photodetector, the device demonstrates a broad spectral photoresponse ranging from ultraviolet (365 nm) to near-infrared (1050 nm). When irradiated by 532 nm laser, the photodetector shows a responsivity of up to 11.6 A/W and achieves quick response/recovery speed of 19.6/8.8 μs. As a photovoltaics device, an external quantum efficiency of 78% and a responsivity of 0.33 A/W are observed. This study showcases the potential for high-performance multifunctional devices utilizing Bi2O2Se/MoTe2 heterostructures and provides comprehensive insights into the designed band alignment and its applications.

Lysine based dipeptides-molecular rectifiers with very high rectification ratio and their application towards designing logic gates

In this research paper, we have enquired the dipeptides (i.e., smallest peptides) consisting of oppositely charged amino acids namely, Lysine-Aspartic and Lysine-Glutamic, where l-Lysine is positively charged, and both L-Aspartic and L-Glutamic are negatively charged amino acids. The l-Glutamic acid has only one extra CH2 chain as compared with l-Aspartic acid. These two dipeptides are stringed to Au, Ag and Cu electrodes, to form molecular devices. Distinct parameters including conductance, Homo-Lumo gap, dipole moment, current-voltage characteristics are intrigued using NEGF-DFT technique. Au-Lysine-Aspartic-Au offers the negative differential resistance regime with the highest peak-to-valley current ratio of 28.79. Lysine-Aspartic with Cu electrodes and Lysine-Glutamic with Au electrodes offers the highest rectification ratio of 146.96 and 34.31 respectively, as compared with other electrodes. Lysine-Aspartic based dipeptides offer higher rectification ratio as compared with Lysine-Glutamic based dipeptides. Moreover, these two dipeptides offer opposite correlation between dipole moment, coupling strength and switching regimes. The reason behind rectification ratio and negative differential resistance is elaborated using transmission spectra, molecular projected self-Hamiltonian states and transmission pathway. The OR, AND and XOR logic gates are proposed using switching regimes of Au-Lysine-Aspartic-Au. We have also detected the thermal stability of one of the heterostructure using ab initio molecular dynamics simulation.

Porphyrin-Regulated Heterostructured Hydrogel Ionic Diode with a High Rectification Ratio and Output Voltage.

Nanochannel ionic diodes require extremely complex and expensive fabrication processes. Polyelectrolyte ionic diodes attracted widespread attention among ionic rectification systems due to their simplicity of development and the ability to break the size limits of the nanochannel. However, enhancement of their rectification ratio is still in the exploratory stage. In this study, chitosan (CS) hydrogels and sodium polyacrylate (PAAs) hydrogels were prepared as the substrates for the heterostructured ionic diodes. 5,10,15,20-Tetrakis(4-aminophenyl)-21H,23H-porphyrin (TAPP) was selected to regulate the rectification ratio of ionic diodes. By adding 0.05 wt % TAPP to the CS hydrogel, the rectification ratio of the ionic diode can be increased to 10, which is 4 times larger than that of the undoped ionic diode. In contrast, the rectification ratio of the ionic diodes with TAPP added in the PAAs hydrogel decreases to 2. In addition, the ionic diode composed of the TAPP-doped CS hydrogel and PAAs hydrogel has the characteristics of a high open-circuit voltage. The open-circuit voltage of the 10 mm × 10 mm × 4 mm heterojunction hydrogel reached 370 mV. The ionic diodes can be used as a self-powered power supply device.

High-Performance Infrared Detectors Based on Black Phosphorus/Carbon Nanotube Heterojunctions.

Infrared detectors have broad application prospects in the fields of detection and communication. Using ideal materials and good device structure is crucial for achieving high-performance infrared detectors. Here, we utilized black phosphorus (BP) and single-walled carbon nanotube (SWCNT) films to construct a vertical van der Waals heterostructure, resulting in high-performance photovoltaic infrared detectors. In the device, a strong built-in electric field was formed in the heterojunction with a favored energy-band matching between the BP and the SWCNT, which caused a good photovoltaic effect. The fabricated devices exhibited a diode-like rectification behavior in the dark, which had a high rectification ratio up to a magnitude of 104 and a low ideal factor of 1.4. Under 1550 nm wavelength illumination, the 2D BP/SWCNT film photodetector demonstrated an open-circuit voltage of 0.34 V, a large external power conversion efficiency (η) of 7.5% and a high specific detectivity (D*) of 3.1 × 109 Jones. This external η was the highest among those for the photovoltaic devices fabricated with the SWCNTs or the heterostructures based on 2D materials and the obtained D* was also higher than those for most of the infrared detectors based on 2D materials or carbon materials. This work showcases the application potential of BP and SWCNTs in the detection field.

A Dual-Functional Perovskite-Based Photodetector and Memristor for Visual Memory.

The imitation of human visual memory demands the multifunctional integration of light sensors similar to the eyes, and image memory, similar to the brain. Although humans have already implemented electronic devices with visual memory functions, these devices require a combination of various components and logical circuits. However, the combinationof visual perception and high-performance information storage capabilities into a single device to achieve visual memory remains challenging. In this study, inspired by the function of human visual memory, a dual-functional perovskite-based photodetector (PD) and memristor are designed to realize visual perception and memory capacities. As a PD, it realizes an ultrahigh self-powered responsivity of 276mA W-1 , a high detectivity of 4.7×1011 Jones (530nm; light intensities, 2.34mWcm-2 ), and a high rectification ratio of ≈100 (±2V). As a memristor, an ultrahigh on/off ratio (≈105 ), an ultralow power consumption of 3×10-11 W, a low setting voltage (0.15V), and a long retention time (>7000s) are realized. Moreover, the dual-functional device has the capacity to perceive and remember light paths and store data with good cyclic stability. This device exhibits perceptual and cyclic erasable memory functions, which provides new opportunities for mimicking human visual memory in future multifunctional applications.

Self‐Powered Photodetector with High Performance Based on All‐2D NbSe2/MoSe2 van der Waals Heterostructure

Abstract2D materials provide an effective strategy for the construction of fast‐responsive and highly sensitive Schottky heterojunction devices. However, the strong Fermi pinning at the contact between bulk metallic electrodes and 2D semiconductor materials greatly hinders the wide application of such devices in optoelectronics. Herein, a self‐powered photodetector with high performance is fabricated based on an all‐2D van der Waals (vdWs) heterojunction composed of metallic 2H‐NbSe2 and semiconducting MoSe2. Benefiting from the strong built‐in electric field, the device exhibits a high rectification ratio of 2.1 × 103. Furthermore, the photovoltaic effect can be observed in a broad spectrum ranging from 405 to 980 nm without external voltage, where a maximum responsivity of 64.92 A W−1, a maximum specific detectivity of 2.39 × 1014 Jones, and a large on–off current ratio >105 are obtained at 650 nm. Simultaneously, the efficient charge separation at the high‐quality heterointerface of NbSe2/MoSe2 results in a fast response/recovery time of 180/80 µs. This work demonstrates the promising potential of the 2D metallic NbSe2 as an electrode forming a Schottky heterojunction to realize a high‐performance broadband photodetector for near‐infrared communication.