High-quality Single-crystalline Research Articles

Studying Critical Parameters of Superconductor via Diamond Quantum Sensors

Abstract Critical parameters are the key to superconductivity research, and reliable instrumentations can facilitate the study. Traditionally, one has to use several different measurement techniques to measure critical parameters separately. In this work, we develop the use of a single species of quantum sensor to determine and estimate several critical parameters with the help of independent simulation data. We utilize the nitrogen-vacancy (NV) center in the diamond, which recently emerged as a promising candidate for probing exotic features in condensed matter physics. The non-invasive and highly stable nature provides extraordinary opportunities to solve scientific problems in various systems. Using a high-quality single-crystalline YBa2Cu4O8 (YBCO) as a platform, we demonstrate the use of diamond particles and a bulk diamond to probe the Meissner effect. The evolution of the vector magnetic field, the H-T phase diagram, and the map of fluorescence contour are studied via NV sensing. Our results reveal different critical parameters, including lower critical field Hc1 , upper critical field Hc2 , and critical current density jc , as well as verifying the unconventional nature of this high-temperature superconductor YBCO. Therefore, NV-based quantum sensing techniques have huge potential in condensed matter research.

High-temporal Dynamic Self-powered β-Ga2O3/GaN Heterojunction Ultraviolet Photodetector

Abstract In this report, we successfully fabricate a high-temporal-response β-Ga2O3/GaN heterojunction ultraviolet photodetector. A high-quality 2-inch single-crystalline β-Ga2O3 film is grown on GaN template with a GaOx buffer layer using Plasma-Assisted Molecule Beam Epitaxy (PA-MBE). Based on the as-grown film, a self-powered heterojunction detector with a unilateral recessed interdigital electrode is constructed. The device exhibits a broad-spectrum ultraviolet selective response characteristics with a cut-off edge at 330 nm and achieves a responsivity of 0.7 A/W under zero bias. Under a bias of 5 V, the rapid photoresponse rise time and decay time are 30 μs and 10.8 ms, respectively, and the photo-to-dark current ratio (PDCR) reaches 103. Considering the heterojunction energy band structure of β-Ga2O3/GaN, the work function difference of 0.43 eV facilitates electron migration and enables the self-powered operation. These results demonstrate a promising and efficient approach for developing high-performance, self-powered UV photodetectors and offer a robust alternative to conventional high-energy-consuming UV detection systems.

Coherent Epitaxy of HfxZr1-xO2 Thin Films by High-pressure Magnetron Sputtering

Due to remarkable high-k and ferroelectric properties in CMOS devices, the study of crystalline HfxZr1-xO2 (HZO) thin films has attracted tremendous interest recently. However, up to now, the epitaxial growth of HZO films has only been achieved by pulse laser deposition, a technique scarcely utilized in CMOS devices. Therefore, developing appropriate epitaxial methods of HZO films (such as sputtering) is fairly necessary, but a challenge at present. In this work, high-quality single-crystalline HZO films were synthesized by high-pressure magnetron sputtering. The epitaxial growth of HZO films on yttria-stabilized zirconia (YSZ) substrate was demonstrated by a combination of high-resolution X-ray diffraction, atom force microscope, and scanning transmission electron microscope. In addition, good insulating characteristics were obtained by replacing insulating substrates with conductive substrates as electrodes. Our results provide a novel way for the epitaxial growth of the single-crystalline structure of HZO thin films towards the high performance of high-k and ferroelectric devices.

High-quality temperature-complementary bulk acoustic wave resonators fabricated with strippable single-crystalline AlN films grown on sapphire

To satisfy the strict demands of 5G radio frequency communication, we propose high-quality, flexible temperature-compensated single-crystalline AlN film bulk acoustic wave resonators (TC-SABARs) based on a 6-inch sapphire substrate. An AlGaN sacrificial layer and a 600-nm-thick single-crystalline AlN epitaxial layer are deposited on a sapphire substrate by metal organic chemical vapor deposition (MOCVD). Two types of TC-SABARs are fabricated and their performances are compared with published results. The results indicate that one of the TC-SABARs has a maximum Bode Q of 3406, an effective coefficient (Keff2) of 6.21%, and a temperature coefficient of frequency (TCF) of −9.5 ppm/°C. The other TC-SABAR exhibits a maximum Bode Q of 3022, a Keff2 of 5.99%, and a TCF of +0.7 ppm/°C. This performance can be attributed to the high-quality single-crystalline AlN film and the temperature-compensation structure with nonmetallic flip-chip bonding film transfer process and a thick SiO2 layer.

Single Crystalline GeSe Van Der Waals Ribbons With Uniform Layer Stacking, High Carrier Mobility, and Adjustable Edge Morphology.

Performance of the group IV monochalcogenide GeSe in solar cells, electronic, and optoelectronic devices is expected to improve when high-quality single crystalline material is used rather than polycrystalline films. Crystalline flakes represent an attractive alternative to bulk single crystals as their synthesis may be developed to be scalable, faster, and with higher overall yield. However, large - and especially large and thin - single crystal flakes are notoriously hard to synthesize. Here it is demonstrated that vapor-liquid-solid growth combined with direct lateral vapor-solid incorporation produces high-quality single crystalline GeSe ribbons with tens of micrometers size and controllable thickness. Electron microscopy shows that the ribbons exhibit perfect equilibrium (AB) van der Waals stacking order without extended defects across the entire thickness, in contrast to the conventional case of substrate-supported flakes where material is added via layer-by-layer nucleation and growth on the basal plane. Electrical measurements show anisotropic transport and a high Hall mobility of 85 cm2V-1s-1, on par with the best single crystals to date. Growth from mixed GeSe and SnSe vapors, finally, yields ribbons with unchanged structure and composition but with jagged edges, promising for applications that rely on ample chemically active edge sites, such as catalysis or photocatalysis.

Engineering Carrier Density and Effective Mass of Plasmonic TiN Films by Tailoring Nitrogen Vacancies.

The introduction of nitrogen vacancies has been shown to be an effective way to tune the plasmonic properties of refractory titanium nitrides. However, its underlying mechanism remains debated due to the lack of high-quality single-crystalline samples and a deep understanding of electronic properties. Here, a series of epitaxial titanium nitride films with varying nitrogen vacancy concentrations (TiNx) were synthesized. Spectroscopic ellipsometry measurements revealed that the plasmon energy could be tuned from 2.64 eV in stoichiometric TiN to 3.38 eV in substoichiometric TiNx. Our comprehensive analysis of electrical and plasmonic properties showed that both the increased electronic states around the Fermi level and the decreased carrier effective mass due to the modified electronic band structures are responsible for tuning the plasmonic properties of TiNx. Our findings offer a deeper understanding of the tunable plasmonic properties in epitaxial TiNx films and are beneficial for the development of nitride plasmonic devices.

High-Quality Single Crystalline Sc0.37Al0.63N Thin Films Enabled by Precise Tuning of III/N Atomic Flux Ratio during Molecular Beam Epitaxy

We attained wurtzite ScxAl1−xN (0.16 ≤ x ≤ 0.37) thin films by varying the Sc and Al fluxes at a fixed active nitrogen flux during plasma-assisted molecular beam epitaxy. Atomic fluxes of Sc and Al sources via measured Sc percentage in as-grown ScxAl1−xN thin films were derived as the feedback for precise determination of the ScxAl1−xN growth diagram. We identified an optimal III/N atomic flux ratio of 0.78 for smooth Sc0.18Al0.82N thin films. Further increasing the III/N ratio led to phase separation under N-rich conditions, validated by the observation of high-Sc-content hillocks with energy-dispersive X-ray spectroscopy mapping. At the fixed III/N ratio of 0.78, we found that phase separation with high-Al-content hillocks occurs for x > 0.37, which is substantially lower than the thermodynamically dictated threshold Sc content of ~0.55 in wurtzite ScxAl1−xN. We postulate that these wurtzite-phase purity degradation scenarios are correlated with adatom diffusion and the competitive incorporation process of Sc and Al. Therefore, the ScxAl1−xN growth window is severely restricted by the adatom kinetics. We obtained single crystalline Sc0.37Al0.63N thin films with X-ray diffraction (002)/(102) ω rocking curve full-width at half-maximums of 2156 arcsec and 209 arcsec and surface roughness of 1.70 nm. Piezoelectric force microscopy probing of the Sc0.37Al0.63N epilayer validates unambiguous polarization flipping by 180°.

Supersaturation- and external force-engineered high-quality 2D CsCu2I3 single-crystalline film for heterogeneous integration in photodetectors

Heterogeneous integration of various crystalline materials in electronic and optoelectronic devices have fueled the development of two-dimensional (2D) perovskite single-crystalline (SC) film. However, it is still challenging to synthesize 2D CsCu2I3 SC film due to the uncontrolled nuclei/growth. In the work, the bottleneck for the synthesis of 2D CsCu2I3 SC film can be well tackled by the solution supersaturation and external pressure for the first time, meanwhile, the morphological transformation of CsCu2I3 from dendritic crystal to 2D film are firstly achieved through controlling nucleation driving force. The heterogeneous integration of 2D CsCu2I3 SCs film on various substrates was demonstrated, a self-powered GaN-CsCu2I3 SC film photodetector exhibits high rectification ratio of 1250 (±1 V) with improved responsivity of 460 mA W−1 and EQE of 163 %, which outperforms most reported 2D lead-free halide perovskite film photodetectors. Furthermore, theoretical computational calculation was employed to investigate their crystal structure and electronic distribution, evidencing that 2D CsCu2I3 SC film could facilitate the separation of photo-induced carriers. The study not only shows an in-depth mechanism for perovskite growth, but also advances the development of 2D copper-based perovskite film and hetero-integration, laying the groundwork for future commercial optoelectronics.

Interfacial Engineering for Controlled Crystal Mosaicity in Single-Crystalline Perovskite Films.

Organic-inorganic hybrid perovskites have attracted significant attention for optoelectronic applications due to their efficient photoconversion properties. However, grain boundaries and irregular crystal orientations in polycrystalline films remain issues. This study presents a method for producing crystalline-orientation-controlled perovskite single-crystal films using retarded solvent evaporation. It is shown that single-crystal films, grown via inverse temperature crystallizationwithin a confined space, exhibit enhanced optoelectronic property. Using interfacial polymer layer, this method produces high-quality perovskite single-crystalline films with varying crystal orientations. Density functional theory calculations confirm favorable adsorption energies for (110) surfaces with methylammonium iodide and PbI2 terminations on poly(3-hexylthiophene), and stronger adsorption for (224) surfaces with I and methylammonium terminations on polystyrene, influenced by repulsive forces between the thiophene group and the perovskite surface. The correlation between charge transport characteristics and perovskite single-crystalline properties highlights potential advancements in perovskite optoelectronics, improving device performance and reliability.

Single-crystalline metal-oxide dielectrics for top-gate 2D transistors.

Two-dimensional (2D) structures composed of atomically thin materials with high carrier mobility have been studied as candidates for future transistors1-4. However, owing to the unavailability of suitable high-quality dielectrics, 2D field-effect transistors (FETs) cannot attain the full theoretical potential and advantages despite their superior physical and electrical properties3,5,6. Here we demonstrate the fabrication of atomically thin single-crystalline Al2O3 (c-Al2O3) as a high-quality top-gate dielectric in 2D FETs. By using intercalative oxidation techniques, a stable, stoichiometric and atomically thin c-Al2O3 layer with a thickness of 1.25 nm is formed on the single-crystalline Al surface at room temperature. Owing to the favourable crystalline structure and well-defined interfaces, the gate leakage current, interface state density and dielectric strength of c-Al2O3 meet the International Roadmap for Devices and Systems requirements3,5,7. Through a one-step transfer process consisting of the source, drain, dielectric materials and gate, we achieve top-gate MoS2 FETs characterized by a steep subthreshold swing of 61 mV dec-1, high on/off current ratio of 108 and very small hysteresis of 10 mV. This technique and material demonstrate the possibility of producing high-quality single-crystalline oxides suitable for integration into fully scalable advanced 2D FETs, including negative capacitance transistors and spin transistors.

Self-powered UVC detectors based on α-Ga2O3 with enchanted speed performance

Detectors were developed for detecting irradiation in the short-wavelength ultraviolet (UVC) interval using high-quality single-crystalline α-Ga2O3 films with Pt interdigital contacts. The films of α-Ga2O3 were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy. The spectral dependencies of the photo to dark current ratio, responsivity, external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm. The maximum of photo to dark current ratio, responsivity, external quantum efficiency, and detectivity of the structures were 1.16 × 104 arb. un., 30.6 A/W, 1.65 × 104%, and 6.95 × 1015 Hz0.5·cm/W at a wavelength of 230 nm and an applied voltage of 1 V. The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping. The α-Ga2O3 film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga2O3 interfaces. At a wavelength of 254 nm and zero applied voltage, the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2 × 10−2%. The UVC detectors based on the α-Ga2O3 films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.

Momentum-Resolved Electronic Structures and Strong Electronic Correlations in Graphene-like Nitride Superconductors.

Although transition-metal nitrides have been widely applied for several decades, experimental investigations of their high-resolution electronic band structures are rare due to the lack of high-quality single-crystalline samples. Here, we report on the first momentum-resolved electronic band structures of titanium nitride (TiN) films, which are remarkable nitride superconductors. The measurements of the crystal structures and electrical transport properties confirmed the high quality of these films. More importantly, from a combination of high-resolution angle-resolved photoelectron spectroscopy and first-principles calculations, the extracted Coulomb interaction strength of TiN films can be as large as 8.5 eV, whereas resonant photoemission spectroscopy yields a value of 6.26 eV. These large values of Coulomb interaction strength indicate that superconducting TiN is a strongly correlated system. Our results uncover the unexpected electronic correlations in transition-metal nitrides, potentially providing a perspective not only to understand their emergent quantum states but also to develop their applications in quantum devices.

Growth of Quasi-Two-Dimensional CrTe Nanoflakes and CrTe/Transition Metal Dichalcogenide Heterostructures

Two-dimensional (2D) van der Waals layered materials have been explored in depth. They can be vertically stacked into a 2D heterostructure and represent a fundamental way to explore new physical properties and fabricate high-performance nanodevices. However, the controllable and scaled growth of non-layered quasi-2D materials and their heterostructures is still a great challenge. Here, we report a selective two-step growth method for high-quality single crystalline CrTe/WSe2 and CrTe/MoS2 heterostructures by adopting a universal CVD strategy with the assistance of molten salt and mass control. Quasi-2D metallic CrTe was grown on pre-deposited 2D transition metal dichalcogenides (TMDC) under relatively low temperatures. A 2D CrTe/TMDC heterostructure was established to explore the interface’s structure using scanning transmission electron microscopy (STEM), and also demonstrate ferromagnetism in a metal–semiconductor CrTe/TMDC heterostructure.

Hydrogen-assisted chemical vapor deposition for heteroepitaxial growth of pure ε-Ga2O3 films

This study presents a novel approach to control the crystalline phase and surface morphology of substable ε-Ga2O3 thin films by regulating the hydrogen flow rate during chemical vapor deposition (CVD). The objective is to achieve high-quality and cost-effective heteroepitaxial pure-phase single-crystalline ε-Ga2O3 thin films on sapphire substrates. The crystalline phases and crystalline qualities of the thin films were determined by X-ray diffraction (XRD) and Raman spectroscopy. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) results show that the surface of the ε-Ga2O3 films prepared by this method is flat and the minimum value of the surface roughness (RMS) is 4.130 nm. We explain the reason for the differences in the surface morphology of the films from the point of view of hydrogen passivation. Measurements by UV–Visible spectrophotometer, the UV cut-off edge is located at 250 nm and the optical band gap is about 4.9 eV. The experimental results show that with the increase of hydrogen flow rate, the content of β-Ga2O3 in the films and the surface roughness and maximum height of the contour (RZ) decreases, until a smooth surface of the pure-phase ε-Ga2O3 film is produced. The success of the chemical vapor deposition method for heterogeneous epitaxy of high-quality ε-Ga2O3 films on sapphire substrates greatly reduces the production cost and expensive investment in production equipment, which makes its application in high electron mobility transistors, piezoelectric resonators, and sun-blind detectors have great potential, and at the same time, this method provides ideas for the preparation of other metastable materials.

Resonant-cavity-enhanced 4H-SiC thin film MSM UV photodetectors on SiO2/Si substrates

Heterogeneous integration of 4H-SiC film with Si substrate can produce ultraviolet (UV) photodetectors (PD) with higher performance and easier integration with silicon CMOS circuits than homogenous epitaxy of 4H-SiC on SiC substrates. In this study, 1.2 µm thick high-quality single crystalline 4H-SiC thin films were successfully bonded with SiO2/Si (100) substrates using the Smart-Cut technique, achieving bubble-free bonding interfaces and 6.03 MPa bonding strength. UV PDs of metal–semiconductor–metal type with a resonant cavity structure were fabricated for the first time using the heterogenous film sample. The device exhibits a low dark current of 1.6 × 10−13 A in reverse bias of 20 V and a maximum specific detectivity of about 5.2 × 1012 Jones at 280 nm, which is significant for a device with a resonance-enhanced structure. These results demonstrate a promising approach for the fabrication of 4H-SiC devices with silicon CMOS circuits.

Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN

The recently demonstrated semiconductor grafting approach allows one to create an abrupt, low interface-trap-density heterojunction between a high-quality p-type single-crystalline semiconductor (non-nitrides) with n-type GaN. However, due to the surface band-bending from GaN polarization, an energy barrier exists at the grafted heterojunction, which can impact the vertical charge carrier transport. Reducing the energy barrier height is essential for some advanced device development. In this work, we employed UV/O3 and O2 plasma to treat a Ga-polar GaN surface with/without an ultrathin (∼2 nm) ALD-Al2O3 coating and studied the effects of the treatments on surface band-bending. Through XPS measurements, it was found that the treatments can suppress the upward band-bending of the Ga-polar GaN by 0.11–0.39 eV. The XPS results also showed that UV/O3 treatment is an effective surface cleaning method with little surface modification, while O2 plasma causes a strong oxidation process that occurs inside the top layer GaN.

Strain-mediated phase crossover in Ruddlesden–Popper nickelates

Recent progress on the signatures of pressure-induced high-temperature superconductivity in Ruddlesden–Popper (RP) nickelates (Lan+1NinO3n+1) has attracted growing interest in both theoretical calculations and experimental efforts. The fabrication of high-quality single-crystalline RP nickelate thin films is critical for possible reducing the superconducting transition pressure and advancing applications in microelectronics in the future. In this study, we report the observations of an active phase transition in RP nickelate films induced by misfit strain. We found that RP nickelate films favor the perovskite structure (n = ∞) under tensile strains, while compressive strains stabilize the La3Ni2O7 (n = 2) phase. The selection of distinct phases is governed by the strain dependent formation energy and electronic configuration. In compressively strained La3Ni2O7, we experimentally determined the eg splitting energy is ~0.2 eV and electrons prefer to occupy in-plane orbitals. First-principles calculations unveil a robust coupling between strain effects and the valence state of Ni ions in RP nickelates, suggesting a dual driving force for the inevitable phase co-existence transition in RP nickelates. Our work underscores the sensitivity of RP nickelate formation to epitaxial strain, presenting a significant challenge in fabricating pure-phase RP nickelate films. Therefore, special attention to stacking defects and grain boundaries between different RP phases is essential when discussing the pressure-induced superconductivity in RP nickelates.

Structural and electronic properties of MoS2 and MoSe2 monolayers grown by chemical vapor deposition on Au(111).

The exceptional electronic and photonic properties of the monolayers of transition metal dichalcogenides including the spin-orbit splitting of the valence and conduction bands at the K points of the Brillouin zone make them promising for novel applications in electronics, photonics and optoelectronics. Scalable growth of these materials and understanding of their interaction with the substrate is crucial for these applications. Here we report the growth of MoS2 and MoSe2 monolayers on Au(111) by chemical vapor deposition at ambient pressure as well as the analysis of their structural and electronic properties down to the atomic scale. To this aim, we apply ultrahigh vacuum surface sensitive techniques including scanning tunneling microscopy and spectroscopy, low-energy electron diffraction, X-ray and angle-resolved ultraviolet photoelectron spectroscopy in combination with Raman spectroscopy at ambient conditions. We demonstrate the growth of high-quality epitaxial single crystalline MoS2 and MoSe2 monolayers on Au(111) and show the impact of annealing on the monolayer/substrate interaction. Thus, as-grown and moderately annealed (<100 °C) MoSe2 monolayers are decoupled from the substrate by excess Se atoms, whereas annealing at higher temperatures (>250 °C) results in their strong coupling with the substrate caused by desorption of the excess Se. The MoS2 monolayers are strongly coupled to the substrate and the interaction remains almost unchanged even after annealing up to 450 °C.

Exceptional behavior of a high-temperature superconductor in proximity to a ferromagnet in a bilayer film, La0.67Sr0.33MnO3/YBa2Cu3O7.

We studied the electronic properties of a high-temperature superconductor in proximity to a ferromagnetic material in a bilayer film of La0.67Sr0.33MnO3 (LSMO)/YBa2Cu3O7 (YBCO). High-quality single-crystalline films of YBCO and LSMO/YBCO were grown epitaxially on an SrTiO3 (001) surface. Magnetization data of the LSMO/YBCO bilayer exhibit ferromagnetic transition at about 255 K, which is much smaller than the Curie temperature of bulk LSMO. Experimental data show the emergence of magnetic anisotropy with cooling, which becomes significantly stronger in the superconducting phase. The onset temperature of diamagnetism is observed at 86 K in the YBCO sample for the out-of-plane magnetization and at 89 K in the in-plane data. Interestingly, the diamagnetism sets in at about 86 K for both magnetization directions in the LSMO/YBCO film despite the presence of the ferromagnetic LSMO layer underneath. Ba 4d and Y 3d core-level spectra show different surface and bulk electronic structures. Surface contribution is reduced significantly in the LSMO/YBCO sample, suggesting enhanced bulk-like behavior due to an enhancement of electron density near the surface arising from charge transfer across the interface. These results reveal an outstanding platform for on-demand tuning of properties without affecting the superconductivity of the system for the exploration of fundamental science and applications in advanced technology.

Enhancing growth of high-quality two-dimensional CsPbBr3 flakes on sapphire substrate by direct chemical vapor deposition method

Two-dimensional (2D) cesium lead halide (CsPbBr3) nanoflakes have attracted significant attention due to their exceptional optoelectronic properties. Herein, the direct chemical vapor deposition (CVD) method was employed to synthesize high-quality single-crystalline 2D CsPbBr3 flakes on a sapphire substrate using PbBr2 and CsBr precursors. The study offers a comprehensive analysis of the reaction mechanisms involved, including precursor vaporization, transport, decomposition, and subsequent reactions. These factors play a crucial role in modifying the growth process and achieving the desired properties of CsPbBr3 flakes on the sapphire substrate. Additionally, a detailed investigation was conducted into the position-dependent and power-dependent photoluminescence (PL) properties of CsPbBr3flakes on sapphire substrates. The results of this study contribute to the expanding knowledge base regarding the growth of 2D perovskite materials. Moreover, they open up avenues for future research and development in the field of advanced optoelectronics.