Abstract
Abstract In this report, we successfully fabricate a high-temporal-response β-Ga2O3/GaN heterojunction ultraviolet photodetector. A high-quality 2-inch single-crystalline β-Ga2O3 film is grown on GaN template with a GaOx buffer layer using Plasma-Assisted Molecule Beam Epitaxy (PA-MBE). Based on the as-grown film, a self-powered heterojunction detector with a unilateral recessed interdigital electrode is constructed. The device exhibits a broad-spectrum ultraviolet selective response characteristics with a cut-off edge at 330 nm and achieves a responsivity of 0.7 A/W under zero bias. Under a bias of 5 V, the rapid photoresponse rise time and decay time are 30 μs and 10.8 ms, respectively, and the photo-to-dark current ratio (PDCR) reaches 103. Considering the heterojunction energy band structure of β-Ga2O3/GaN, the work function difference of 0.43 eV facilitates electron migration and enables the self-powered operation. These results demonstrate a promising and efficient approach for developing high-performance, self-powered UV photodetectors and offer a robust alternative to conventional high-energy-consuming UV detection systems.
Published Version
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