High-quality Monolayer Research Articles

Characterizing the Interactions of DNA Oligomers with Graphene Field-Effect Transistors

Introduction: Graphene field-effect transistors (G-FETs) constitute an emerging platform for biosensing applications. Indeed, graphene is an ideal material for the detection of biomolecules: every atom of its monolayer structure is in contact with its environment, resulting in an electrical conductivity that is highly responsive to local electrostatic fluctuations from adjacent molecules. For genomic applications, most detection methods use DNA probe sequences bound to the graphene surface, in order to capture a specific target DNA sequence and detect the corresponding change in the electrical response of the sensor1 - 2. However, the effect of interactions between DNA and graphene on the electrical conductance is still not fully understood. Here, we investigate specifically the adsorption of short DNA oligomers on graphene field-effect transistors, in order to model and control the effect of such interactions in biosensing applications with G-FETs. Methods and Results: First, we fabricated G-FET sensors as follow3: Using photolithography techniques, an array of source and drain electrodes were patterned in gold on a Si wafer with a SiO2 insulator layer, as well as a common on-chip gate electrode in platinum. High-quality monolayer CVD-grown graphene was transferred onto the substrate and then etched to create 6 x 4 µm ribbons between each source-drain pair. Transfer curves (Isd vs. Vg) performed in saline buffer solution revealed a conductance minimum at the charge neutrality point of the graphene. Devices were then exposed to solutions of DNA, consisting in 22-single-stranded nucleotides (ssDNA) or double-stranded nucleotides (dsDNA) DNA oligomers diluted in 0,01X PBS buffer. Selected G-FET devices were exposed to different ssDNA concentrations during 15 min, followed by washing steps with 0,01X PBS. Electrical curves were recorded before, during and after each DNA exposure. In this presentation, we will present results showing that ssDNA exposure causes a left-shift of the charge neutrality point above a concentration threshold, and that this shift is proportional to ssDNA concentration. In addition, non-covalent adsorption of ssDNA on graphene appears to be reversible upon washing. Finally, we will discuss differences between the adsorption of dsDNA and ssDNA. Conclusion and Relevance: Our results suggest that unspecific DNA adsorption on graphene can lead to a G-FET response, which needs to be modeled, compensated and /or passivated in biosensing experiments, especially in order to achieve low detection limits for target sequences in complex biological media.

Epitaxial fabrication of monolayer copper arsenide on Cu(111)**Project supported by the National Key Research & Development Program of China (Grant Nos. 2016YFA0202300 and 2018YFA0305800), the National Natural Science Foundation of China (Grant Nos. 61888102, 11604373, 61622116, and 51872284), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos. XDB30000000 and XDB28000000), and the University of Chinese Academy of

We report the epitaxial growth of monolayer copper arsenide (CuAs) with a honeycomb lattice on Cu(111) by molecular beam epitaxy (MBE). Scanning tunneling microscopy (STM), low energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) verify the superlattice of monolayer CuAs on Cu(111) substrate. Angle-resolved photoemission spectroscopy (ARPES) measurements together with DFT calculations demonstrate the electronic band structures of monolayer CuAs and reveal its metallic nature. Further calculations show that charge transfer from Cu(111) substrate to monolayer CuAs lifts the Fermi level and tunes the band structure of the monolayer CuAs. This high-quality epitaxial monolayer CuAs with potential tunable band gap holds promise on the applications in nano-electronic devices.

High Quality Graphene Thin Films Synthesized by Glow Discharge Method in A Chemical Vapor Deposition System Using Solid Carbon Source.

Arc discharge is traditionally used to synthesize randomly arranged graphene flakes. In this paper, we substantially modify it into a glow discharge method so that the discharge current is much more reduced. The H2 and/or Ar plasma etching of the graphitic electrode (used to ignite the plasma) is hence much gentler, rendering it possible to grow graphene in thin film format. During the growth at a few mbar, there is no external carbon gas precursor introduced. The carbon atoms and/or carbon containing particles as a result of the plasma etching are emitted in the chamber, some of which undergo gas phase scattering and deposit onto the metallic catalyst substrates (Cu-Ni alloy thin films or Cu foils) as graphene sheets. It is found that high quality monolayer graphene can be synthesized on Cu foil at 900 °C. On Cu-Ni, under the same growth condition, somewhat more bilayer regions are observed. It is observed that the material quality is almost indifferent to the gas ratios, which makes the optimization of the deposition process relatively easy. Detailed study on the deposition procedure and the material characterization have been carried out. This work reveals the possibility of producing thin film graphene by a gas discharge based process, not only from fundamental point of view, but it also provides an alternative technique other than standard chemical vapor deposition to synthesize graphene that is compatible with the semiconductor planar process. As the process uses solid graphite as a source material that is rich in the crust, it is a facile and relatively cheap method to obtain high quality graphene thin films in this respect.

Phase-Controlled Synthesis of Monolayer W1- x Rex S2 Alloy with Improved Photoresponse Performance.

Tuning bandgap and phases in the ternary 2D transition metal dichalcogenides (TMDs) alloys has opened up unexpected opportunities to engineer optoelectronic properties and explore potential applications. In this work, a salt-assisted chemical deposition vapor (CVD) growth strategy is reported for the creation of high-quality monolayer W1- x Rex S2 alloys to fulfill a readily phase control from 1H to DT by changing the ratio of Re and W precursors. The structures and chemical compositions of doping alloys are confirmed by combining atomic resolution scanning transmission electron microscopy-annular dark field imaging with energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy, matching well with the calculated results. The field-effect transistors (FETs) devices fabricated based on 1H-W0.9 Re0.1 S2 monolayer exhibit a n-type semiconducting behavior with the mobility of 0.4 cm2 V-1 s-1 . More importantly, the FETs show high-performance responsivity with a value of 17 µA W-1 in air, which is superior to that of monolayer CVD-grown WS2 . This work paves the way toward synthesizing monolayer ternary alloys with controlled phases for potential optoelectronic applications.

Self-assembly of octanethiol on oxide-free cobalt electrode from aqueous solution under electrochemical control

Self-assembly of alkanethiols on Co surface from organic solution has met with limited success due to the presence of the native oxides. A way needs to be found to remove any oxide and form perfect self-assembled monolayers (SAMs). We report the development of electrochemical approach for formation of alkanethiol self-assembled monolayers on base metals in aqueous solutions. For formation of octanethiol (OT) SAMs on oxide-free cobalt surfaces, we combine the surface renewal technique with in situ electrochemical procedure of removing the native oxide, thiol adsorption, and electrochemical control of SAMs properties in one aqueous solution. The use of aqueous thiol-containing media results in removing any oxide by electrochemical reduction, accelerated monolayer formation under electrochemical control, and investigating SAMs surface coverage and monolayer integrity by voltammetry. In this work, we study the influence of different factors on self-assembly process such as the surface pretreatment, adsorption time, the presence of dissolved oxygen, solution pH, and potential cycling on polycrystalline cobalt microelectrode from aqueous 0.1 M NaClO4 solutions of 0.1 mM OT. We obtain the high-quality self-assembled monolayers which are stable in wide range of potentials and show blocking characteristics toward the following Faradaic processes: Co surface oxidation and O2 and H+ reduction.

Molecular dynamics simulation of graphene sinking during chemical vapor deposition growth on semi-molten Cu substrate

Copper foil is the most promising catalyst for the synthesis of large-area, high-quality monolayer graphene. Experimentally, it has been found that the Cu substrate is semi-molten at graphene growth temperatures. In this study, based on a self-developed C–Cu empirical potential and density functional theory (DFT) methods, we performed systematic molecular dynamics simulations to explore the stability of graphene nanostructures, i.e., carbon nanoclusters and graphene nanoribbons, on semi-molten Cu substrates. Many atomic details observed in the classical MD simulations agree well with those seen in DFT-MD simulations, confirming the high accuracy of the C–Cu potential. Depending on the size of the graphene island, two different sunken-modes are observed: (i) graphene island sinks into the first layer of the metal substrate and (ii) many metal atoms surround the graphene island. Further study reveals that the sinking graphene leads to the unidirectional alignment and seamless stitching of the graphene islands, which explains the growth of large single-crystal graphene on Cu foil. This study deepens our physical insights into the CVD growth of graphene on semi-molten Cu substrate with multiple experimental mysteries well explained and provides theoretic references for the controlled synthesis of large-area single-crystalline monolayer graphene.

Transfer-Free, Large-Scale, High-Quality Monolayer Graphene Grown Directly onto the Ti (10 nm)-buffered Substrates at Low Temperatures

Graphene has attracted the interest of many researchers due to various its advantages such as high mobility, high transparency, and strong mechanical strength. However, large-area graphene is grown at high temperatures of about 1,000 °C and must be transferred to various substrates for various applications. As a result, transferred graphene shows many defects such as wrinkles/ripples and cracks that happen during the transfer process. In this study, we address transfer-free, large-scale, and high-quality monolayer graphene. Monolayer graphene was grown at low temperatures on Ti (10nm)-buffered Si (001) and PET substrates via plasma-assisted thermal chemical vapor deposition (PATCVD). The graphene area is small at low mTorr range of operating pressure, while 4 × 4 cm2 scale graphene is grown at high working pressures from 1.5 to 1.8 Torr. Four-inch wafer scale graphene growth is achieved at growth conditions of 1.8 Torr working pressure and 150 °C growth temperature. The monolayer graphene that is grown directly on the Ti-buffer layer reveals a transparency of 97.4 % at a wavelength of 550 nm, a carrier mobility of about 7,000 cm2/V×s, and a sheet resistance of 98 W/□. Transfer-free, large-scale, high-quality monolayer graphene can be applied to flexible and stretchable electronic devices.

Growth of Large-Area Homogeneous Monolayer Transition-Metal Disulfides via a Molten Liquid Intermediate Process.

Growth of large-area, uniform, and high-quality monolayer transition-metal dichalcogenides (TMDs) for practical and industrial applications remains a long-standing challenge. The present study demonstrates a modified predeposited chemical vapor deposition (CVD) process by employing an annealing procedure before sulfurization, which helps in achieving large-area, highly uniform, and high-quality TMDs on various substrates. The annealing procedure resulted in a molten liquid state of the precursors in the CVD process, which not only facilitated a uniform redistribution of the precursor on the substrate (avoid the aggregation) because of the uniform redistribution of the liquid precursor on the substrate but more importantly avoided the undesired multilayer growth via the self-limited lateral supply precursors mechanism. A 2 in. uniform and continuous monolayer WS2 film has been synthesized on the SiO2/Si substrate. Moreover, uniform monolayer WS2 single crystals can be prepared on more general and various substrates including sapphire, mica, quartz, and Si3N4 using the same growth procedure. Besides, this growth mechanism can be generalized to synthesize other monolayer TMDs such as MoS2 and MoS2/WS2 heterostructures. Hence, the present method provides a generalized attractive strategy to grow large-area, uniform, single-layer two-dimensional (2D) materials. This study has significant implications in the advancement of batch production of various 2D-material-based devices for industrial and commercial applications.

Hierarchically Ordered Silicon Metastructures from Improved Self-Assembly-Based Nanosphere Lithography.

We developed an improved self-assembly method to obtain a large-area, high-quality templated monolayer mask using the polystyrene spheres. On the basis of the templated mask, hierarchically ordered Si metastructures with different nanosteps are fabricated using cyclic inductively coupled plasma etching technique. By evaporating a thin gold capping layer on these Si metastructures, their optical properties are comparatively studied using the surface-enhanced Raman scattering spectroscopy. Our proposed technique is highly promising for fabricating a variety of periodic three-dimensional hierarchically ordered metastructures, which could be further utilized for applications in SERS-based biosensors, optical absorbers, metamaterial/metasurface devices, etc.

Photodetection application of one-step synthesized wafer-scale monolayer MoS2 by chemical vapor deposition

Monolayer MoS2 is a known candidate to replace silicon-based materials for photodetection purposes. Achieving industrial production and application of MoS2 calls for efficient and economic synthesis of such material. Here, we report a one-step and low-cost chemical vapor deposition method for the controlled synthesis of high quality and uniform wafer-scale (approximately 9.5 × 4.5 cm) monolayer MoS2 film on SiO2/Si substrates. Using the as-synthesized MoS2 films, MoS2/PbS quantum dot hybrid device arrays are also fabricated. These hybrid devices have broad spectral photoresponse (457–1064 nm), rapid response rate, high responsivity of approximately 1.8 × 104 A W−1, and ultrahigh detectivity of approximately 7.6 × 1013 Jones, which outperforms other pristine two-dimensional as well as commercial Si and InGaAs materials. This low-cost and efficient method of growing wafer-scale monolayer MoS2, as well as the excellent performance of its hybrid device arrays, will strongly support the production and application of monolayer MoS2 in the future.

Rapid generation of purified human RPE from pluripotent stem cells using 2D cultures and lipoprotein uptake-based sorting

BackgroundDespite increasing demand, current protocols for human pluripotent stem cell (hPSC)-derived retinal pigment epithelium (RPE) remain time, labor, and cost intensive. Additionally, absence of robust methods for selective RPE purification and removal of non-RPE cell impurities prevents upscaling of clinical quality RPE production. We aimed to address these challenges by developing a simplified hPSC-derived RPE production and purification system that yields high-quality RPE monolayers within 90 days.MethodsHuman pluripotent stem cells were differentiated into RPE using an innovative time and cost-effective protocol relying entirely on 2D cultures and minimal use of cytokines. Once RPE identity was obtained, cells were transferred onto permeable membranes to acquire mature RPE morphology. RPE differentiation was verified by electron microscopy, polarized VEGF expression, establishment of high transepithelial electrical resistance and photoreceptor phagocytosis assay. After 4 weeks on permeable membranes, RPE cell cultures were incubated with Dil-AcLDL (DiI-conjugated acetylated low-density lipoproteins) and subjected to fluorescence-activated cell sorting (FACS) for purification and subculture.ResultsUsing our 2D cytokine scarce protocol, hPSC-derived functional RPE cells can be obtained within 2 months. Nevertheless, at this stage, most samples contain a percentage of non-RPE/early RPE progenitor cells that make them unsuitable for clinical application. We demonstrate that functional RPE cells express high levels of lipoprotein receptors and that this correlates with their ability to uptake lipoproteins. Combining photoreceptor uptake assay with lipoprotein uptake assay further confirms that only functional RPE cells uptake AcLDL. Incubation of mixed RPE/non-RPE cell cultures with fluorophore conjugated AcLDL and subsequent FACS-based isolation of labeled cells allows selective purification of mature functional RPE. When subcultured, DiI-AcLDL-labeled cells rapidly form pure homogenous high-quality RPE monolayers.ConclusionsPure functional RPE monolayers can be derived from hPSC within 90 days using simplified 2D cultures in conjunction with our RPE PLUS protocol (RPE Purification by Lipoprotein Uptake-based Sorting). The simplicity of this protocol makes it scalable, and the rapidity of production and purification allows for high-quality RPE to be produced in a short span of time making them ideally suited for downstream clinical and in vitro applications.

Defect Passivation and Photoluminescence Enhancement of Monolayer MoS2 Crystals through Sodium Halide-Assisted Chemical Vapor Deposition Growth.

Recent success in the chemical vapor deposition (CVD) growth of atomically thin transition metal dichalcogenide (TMD) crystals opens up prospects for exploiting these materials in nanoelectronic and optoelectronic devices. However, CVD-grown TMDs often suffer from weak crystal quality because of the formation of defects during the growth, which makes a large impact on their electrical and optical properties. Here, we report a facile synthesis of high-quality MoS2 monolayers through a sodium halide-assisted CVD method. Our results show that the addition of sodium halides into MoO3 precursors leads to the rapid growth of highly crystalline MoS2 monolayers. Moreover, the overall photoluminescence (PL) intensity of MoS2 monolayers can be greatly enhanced by up to 2 orders of magnitude. The PL enhancement originates from that the deep trap states induced by sulfur vacancies are passivated by the substitution doping of halogen atoms, which promotes the emission of excitons and trions. Density functional theory calculations indicate that the band gaps of halogen-doped MoS2 monolayers are slightly smaller than those of pristine MoS2 monolayer, which is responsible for the small red shift of PL peaks (∼30 meV). These findings provide a new route toward engineering electronic and optical properties of MoS2 and other TMD monolayers.

Effective shape-controlled synthesis of gallium selenide nanosheets by vapor phase deposition

The controlled synthesis of large and uniform gallium selenide (GaSe) crystals is crucial for its various applications based on the attractive properties of this emerging material. In this work, vapor phase growth of high-quality monolayer GaSe nanosheets with multiple shape and size is achieved by tuning the Ga/GaSe ratio in the precursor. A theoretical model based on density functional theory calculations and kinetic Wulff construction theory describe the observed shape evolution of the GaSe nanosheets. Results show that the Ga/Se ratio plays a critical role in the evolution of the domain shape and size. Moreover, the as-grown GaSe nanosheets show improved performance with photoresponse time less than 0.7 ms and responsibility up to 3,000 A/W. This study presents a previously unexplored strategy for the controlled growth of two-dimensional (2D) GaSe nanosheets for promising applications in next-generation optoelectronics.

Synthesis of High-Quality Monolayer MoS2 by Direct Liquid Injection

We report the synthesis of high-quality single monolayer MoS2 samples using a novel technique that utilizes direct liquid injection (DLI) for delivery of precursors. The DLI system vaporizes a liquid consisting of a selected precursor dissolved in a solvent into small, micron-sized droplets in an expansion chamber maintained at a selected temperature and pressure, before delivery to the deposition chamber. We demonstrate synthesis of monolayer MoS2 on SiO2/Si substrates using the DLI technique with film quality superior to exfoliated samples or those grown by traditional tube furnace chemical vapor deposition (CVD) methods. Photoluminescence measurements of DLI monolayers exhibit consistently brighter emission, narrower line width and higher emission energy than their exfoliated and CVD counterparts. Conductive atomic force microscopy identifies a defect density of 8.3 x 10^11/cm2 in DLI MoS2, lower than the measured density in CVD material and nearly an order of magnitude improvement over the exfoliated MoS2 investigated under the same conditions. The DLI method is directly applicable to many other van der Waals materials which require the use of challenging low vapor pressure precursors, to growth of alloys, and sequential growths of dissimilar materials leading to van der Waals heterostructures.

Interfacial Capillary‐Force‐Driven Self‐Assembly of Monolayer Colloidal Crystals for Supersensitive Plasmonic Sensors

Colloidal lithography technology based on monolayer colloidal crystals (MCCs) is considered as an outstanding candidate for fabricating large-area patterned functional nanostructures and devices. Although many efforts have been devoted to achieve various novel applicatons, the quality of MCCs, a key factor for the controllability and reproducibility of the patterned nanostructures, is often overlooked. In this work, an interfacial capillary-force-driven self-assembly strategy (ICFDS) is designed to realize a high-quality and highly-ordered hexagonal monolayer MCCs array by resorting the capillary effect of the interfacial water film at substrate surface as well as controlling the zeta potential of the polystyrene particles. Compared with the conventional self-assembly method, this approach can realize the reself-assembly process on the substrate surface with few colloidal aggregates, vacancy, and crystal boundary defects. Furthermore, various typical large-scale nanostructure arrays are achieved by combining reactive ion etching, metal-assisted chemical etching, and so forth. Specifically, benefiting from the as-fabricated high-quality 2D hexagonal colloidal crystals, the surface plasmon resonance (SPR) sensors achieve an excellent refractive index sensitivity value of 3497 nm RIU-1 , which is competent for detecting bovine serum albumin with an ultralow concentration of 10-8 m. This work opens a window to prepare high-quality MCCs for more potential applications.

Morphology control of epitaxial monolayer transition metal dichalcogenides

To advance fundamental understanding, and ultimate application, of transition-metal dichalcogenide (TMD) monolayers, it is essential to develop capabilities for the synthesis of high-quality single-layer samples. Molecular beam epitaxy (MBE), a leading technique for the fabrication of the highest-quality epitaxial films of conventional semiconductors has, however, typically yielded only small grain sizes and sub-optimal morphologies when applied to the van der Waals growth of monolayer TMDs. Here, we present a systematic study on the influence of adatom mobility, growth rate, and metal:chalcogen flux on the growth of NbSe2, VSe2 and TiSe2 using MBE. Through this, we identify the key drivers and influence of the adatom kinetics that control the epitaxial growth of TMDs, realising four distinct morphologies of the as-grown compounds. We use this to determine optimised growth conditions for the fabrication of high-quality monolayers, ultimately realising the largest grain sizes of monolayer TMDs that have been achieved to date via MBE growth.

Remarkable quality improvement of as-grown monolayer MoS2 by sulfur vapor pretreatment of SiO2/Si substrates.

Monolayer MoS2 is a direct bandgap semiconductor which is believed to be one of the most promising candidates for optoelectronic devices. Chemical vapor deposition (CVD) is the most popular method to synthesize monolayer MoS2 with a large area. However, many defects are always found in monolayer MoS2 grown by CVD, such as sulfur vacancies, which severely degrade the performance of devices. This work demonstrates a concise and effective method for direct growth of high quality monolayer MoS2 by using SiO2/Si substrates pretreated with sulfur vapor. The MoS2 monolayer obtained using this method shows about 20 times PL intensity enhancement and a much narrower PL peak width than that grown on untreated substrates. Detailed characterization studies reveal that MoS2 grown on sulfur vapor pretreated SiO2/Si substrates has a much lower density of sulfur vacancies. The synthesis of monolayer MoS2 with high optical quality and low defect concentration is critical for both fundamental physics studies and potential practical device applications in the atomically thin limit.

Tailoring the thermal transport properties of monolayer hexagonal boron nitride by grain size engineering

The grain size effect on the thermal transport properties of hexagonal boron nitride (h-BN) thin films was experimentally investigated using the opto-thermal Raman technique. High-quality monolayer h-BN with mean grain sizes ranging from ~7 µm to ~19 nm were successfully synthesized on Pt foil by chemical vapor deposition (CVD). The thermal conductivity (κ) of the single-crystalline h-BN was measured to be ~545 Wm−1 K−1 at 315K, well above the bulk value, and more than a factor of four higher than the value of poly-crystalline h-BN with mean grain size of ~19 nm. The very low thermal boundary conductance (deduced to be ~9.6 GW m−2 K−1) accounts for the significant reduction of κ for h-BN with small grain size. Molecular dynamics (MD) simulations reveal that due to the disordered vibrations of atoms along/near GB, the phonon scattering in poly-crystalline h-BN is greatly enhanced compared to large-grained or single-crystalline samples. These results provide a deep understanding of the thermal transport in two-dimensional systems as well as the possible technological applications.

Effect of Growth Temperature on Physical Properties of MoS2 Thin Films Synthesized by CVD

Due to the application of two-dimensional crystals in different fields, high-quality growth of these materials has attracted more attention from researchers. High-quality monolayer MoS2 with single crystals up to 20 microns in size has been formed on Si substrate by the chemical vapor deposition method. A comprehensive study was carried out on the prepared MoS2 thin films using optical microscopy, atomic force microscopy, x-ray diffraction (XRD) analysis, and Raman spectroscopy. It was concluded that the growth temperature affected the morphology and structure of the synthesized MoS2 sheets. The XRD spectra confirmed that the peak intensity and resolution were highly dependent on the growth temperature. Raman spectroscopy showed that monolayer MoS2 was grown on the silicon substrate at higher temperature, as proved by the Raman frequency difference (∼ 19 cm−1) between two characteristic modes ($$ {\hbox{E}}^{1}_{{2{\rm{g}}}} $$ and A1g). Atomic force micrographs of the films showed the evolution of the surface morphology as a function of the growth temperature.

Fabrication and Imaging of Monolayer Phosphorene with Preferred Edge Configurations via Graphene-Assisted Layer-by-Layer Thinning.

Phosphorene, a monolayer of black phosphorus (BP), is an elemental two-dimensional material with interesting physical properties, such as high charge carrier mobility and exotic anisotropic in-plane properties. To fundamentally understand these various physical properties, it is critically important to conduct an atomic-scale structural investigation of phosphorene, particularly regarding various defects and preferred edge configurations. However, it has been challenging to investigate mono- and few-layer phosphorene because of technical difficulties arising in the preparation of a high-quality sample and damages induced during the characterization process. Here, we successfully fabricate high-quality monolayer phosphorene using a controlled thinning process with transmission electron microscopy and subsequently perform atomic-resolution imaging. Graphene protection suppresses the e-beam-induced damage to multilayer BP and one-side graphene protection facilitates the layer-by-layer thinning of the samples, rendering high-quality monolayer and bilayer regions. We also observe the formation of atomic-scale crystalline edges predominantly aligned along the zigzag and (101) terminations, which is originated from edge kinetics under e-beam-induced sputtering process. Our study demonstrates a new method to image and precisely manipulate the thickness and edge configurations of air-sensitive two-dimensional materials.