SiGe BiCMOS technology offers high-speed, low-noise characteristics, coupled with a high breakdown voltage and favorable integration capability with high yield, making it ideal for developing high performance complex integrated circuits and systems in silicon. Recent advancements have resulted in devices with an fmax exceeding 500 GHz, enabling the creation of circuits operating at higher millimeter-wave (mmW) and sub-mmW frequencies. The trajectory of SiGe technology indicates its potential to extend operational speeds toward THz frequencies, possibly surpassing CMOS devices through scaling path. Moreover, SiGe technology demonstrates favorable performance under extreme environments, particularly exhibiting improved performance at low temperatures.In parallel with progress in device technology, significant advancements in circuit technology have been achieved, leading to the realization of sophisticated integrated RF front-end circuits for various commercial applications such as 5G/6G communication, automotive radar, and THz imaging.This presentation will showcase recent research conducted by the author’s team at Arizona State University (ASU), focusing on the design and development of integrated mmW and THz transceiver circuits and subsystems utilizing SiGe BiCMOS technologies. Our research incorporates device, circuits, and electromagnetic co-design practices, demonstrating close alignment between the designed and measured characteristics of the circuits at mmW and THz frequencies.The presentation will feature implemented examples of transceiver front-end circuits and coherent transceiver arrays. These chip-scale circuits were specifically designed for centralized and distributed beamforming, incorporating high precision synchronization capabilities tailored for 5G mmW and ranging applications. Additionally, fully integrated THz circuits will be presented, demonstrating their effectiveness for chip-scale spectroscopy and THz imaging applications.
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