High-power Devices Research Articles

A Radio Frequency Interference Screening Framework—From Quick-Look Detection Using Statistics-Assisted Network to Raw Echo Tracing

Synthetic aperture radar (SAR) is often affected by other high-power electromagnetic devices during ground observation, which causes unintentional radio frequency interference (RFI) with the acquired echo, bringing adverse effects into data processing and image interpretation. When faced with the task of screening massive SAR data, there is an urgent need for the global perception and detection of interference. The existing RFI detection method usually only uses a single type of data for detection, ignoring the information association between the data at all levels of the real SAR product, resulting in some computational redundancy. Meanwhile, current deep learning-based algorithms are often unable to locate the range of RFI coverage in the azimuth direction. Therefore, a novel RFI processing framework from quick-looks to single-look complex (SLC) data and then to raw echo is proposed. We take the data of Sentinel-1 terrain observation with progressive scan (TOPS) mode as an example. By combining the statistics-assisted network with the sliding-window algorithm and the error-tolerant training strategy, it is possible to accurately detect and locate RFI in the quick looks of an SLC product. Then, through the analysis of the TOPSAR imaging principle, the position of the RFI in the SLC image is preliminarily confirmed. The possible distribution of the RFI in the corresponding raw echo is further inferred, which is one of the first attempts to use spaceborne SAR data to ‌elucidate the RFI location mapping relationship between image data and raw echo. Compared with directly detecting all of the SLC data, the time for the proposed framework to determine the RFI distribution in the SLC data can be shortened by 53.526%. All the research in this paper is conducted on Sentinel-1 real data, which verify the feasibility and effectiveness of the proposed framework for radio frequency signals monitoring in advanced spaceborne SAR systems.

Design and research of high voltage β-Ga2O3 /4H-SiC heterojunction LDMOS

Abstract In recent years, gallium oxide (Ga2O3), one of the ultra-wide band-gap semiconductor materials, has been regarded as one of the most promising materials in the field of high-voltage and high-power electronic devices in the future because of its unique electrical properties and low preparation cost. However, it is difficult for β-Ga2O3 materials to form effective P-type doping, so the PN junction is not formed in most of its power devices, which greatly limits the improvement of its voltage resistance. A novel lateral double-diffused metal-oxide-semiconductor field-effect transistor (LDMOS) is proposed to realize a junction β-Ga2O3 power device and improve the voltage resistance performance of β-Ga2O3 power devices. In this device, a β-Ga2O3 power device with a junction is realized by using P-type 4H-SiC to form a PN junction with N-type β-Ga2O3, and the voltage resistance of the β-Ga2O3 power device is improved. Sentaurus TCAD software was used to simulate the device structure and electrical performance. The device is optimized by adjusting the length of the drift zone, drift zone concentration, SiC channel concentration, and gate oxide thickness. Optimized, the device exhibits a positive threshold voltage of 3.42 V, a breakdown voltage of 2203 V, a specific on-resistance of 7.80 mΩ·cm2, and a power figure of merit of 622 MW/cm2. The results show that the heterojunction device is significant for realizing high-performance junction β-Ga2O3 power devices.

Study of Compact Traveling-Standing Wave Relativistic Folded Waveguide Oscillator With Low Magnetic Field Operation

Abstract In this article, a compact Traveling-standing Wave Relativistic Folded Waveguide Oscillator (TSW-RFWO) is proposed, leveraging a 0.3 T guiding magnetic field to address the crucial needs for miniaturization and practicality in high-power microwave systems. The study conducts a thorough analysis of the electromagnetic characteristics of the TSW-RFWO. Its internal traveling-standing wave signal is analyzed. Utilizing the traveling-standing wave slow-wave structure (TSW-SWS), the TSW-RFWO obtains a low Qe (external quality factor) of 39. The necessity of compacting the high-power device under low magnetic guiding field is analyzed. Employing a 300 kV, 400 A circular electron beam within a 0.3 T guiding magnetic field, PIC simulations indicate a potential output power of 57 MW at 2.74 GHz, achieving a peak efficiency of 47.5%.

Silicon carbide nanowire-reinforced micro-Ag joint based on pinning effect for power electronics packaging

Low-temperature sintering Ag technology is a feasible approach employed in power electron devices. In this study, the influence of the different amounts (0, 0.03, 0.05, 0.07, 0.10, 0.20 wt%) of silicon carbide nanowires (SiC NWs) on the properties and microstructure of micro-Ag paste sintered at 250 °C without pressure has been investigated. The results exhibit that the bonding strength of the Ag-SiC joint reaches a maximum of 43.57 MPa after doping 0.07 wt% SiC NWs, with an increase of 13 % compared with pure Ag joint. This enhancement mechanism can be owed to the Orowan mechanism and the pinning effect of SiC NWs, which nail at grain boundaries that will restrain the dislocation motion of Ag grains. Meanwhile, the electrical resistivity of Ag-0.07SiC shows a minimum value of 5.20 μΩ cm, approximately 10.65 % lower than pure Ag joint. This is attributed to the well-sintered Ag network and the bridging effect of SiC NWs distributed in Ag particles. Thus, incorporating appropriate content of SiC NWs into micro-Ag paste can strengthen the mechanical performance and electrical conductivity of sintered Ag joint. It is hoped that this research could develop a new micro-Ag paste with outstanding properties that could be employed in high-power electronic devices.

Self-assembled nest-like BN skeletons enable polymer composites with high thermal management capacity

The lagging development of thermally conductive but electrically insulating materials has become a bottleneck problem for the next generation of advanced high-power density electronic devices. Although second-phase reinforced composites are promising materials for addressing thermal management issues, the inherent mechanism of severe phonon scattering at the interphase results in actual thermal conductivity enhancement efficiency far below expectations. Here, we report a high-performance polymer composite with a nest-like interconnected boron nitride skeleton. This nest-like interconnected BN skeleton without mechanical contact can provide high-efficiency and long-distance phonon transport channel, realizing high thermal conductivity of 1.827 W m-1 K-1 in polymer composite with ultra-low content (4.7 vol%). Meanwhile, the EP/ nest-like BS composites possess ideal electrical properties and dimensional stability. In the actual heat dissipation process of LED chips, the optimal composite material as the thermal interface material can display a temperature drop of more than 34.8% compared to neat epoxy, which proves the broad application prospects of this strategy in advanced electronic devices.

A Review of Advanced Thermal Interface Materials with Oriented Structures for Electronic Devices

In high-power electronic devices, the rapid accumulation of heat presents significant thermal management challenges that necessitate the development of advanced thermal interface materials (TIMs) to ensure the performance and reliability of electronic devices. TIMs are employed to facilitate an effective and stable heat dissipation pathway between heat-generating components and heat sinks. In recent years, anisotropic one-dimensional and two-dimensional materials, including carbon fibers, graphene, and boron nitride, have been introduced as fillers in polymer-based TIMs due to their high thermal conductivity in specific directions. The orientation of the fillers in the polymer matrix has become an important issue in the development of a new generation of high-performance TIMs. To provide a systematic understanding of this field, this paper mainly discusses recent advances in advanced oriented TIMs with high thermal conductivity (>10 W/(m·K)). For each filler, its preparation strategies and enhancement mechanisms are analyzed separately, with a focus on the construction of oriented structures. Notably, there are few reviews related to carbon fiber TIMs, and this paper details recent research results in this field. Finally, the challenges, prospects, and future development directions of advanced TIMs are summarized in the hope of stimulating future research efforts.

Modeling the effects of crystallite alignment on birefringent light scattering in transparent polycrystalline aluminum oxide

Transparent alumina ceramics are known for high toughness and the ability to withstand high temperatures, making them ideal materials for use in extreme environments and high-power optical devices. However, polycrystalline alumina, which has a hexagonal crystal structure, is difficult to make highly transparent due to birefringent scattering loss. Research has shown that birefringent scattering can be reduced by having finer grains and/or aligned grains. Here, we present an analytical birefringence scattering model that can model realistic microstructures, by including chord length distributions and grain orientations, and predict the birefringence scattering loss quantitatively. Our modeled results match well with existing experimental data for transparent fine grained and aligned alumina. This model is derived from first-principles and is applicable to other transparent ceramics.

Significantly Enhanced Interfacial Thermal Conductance across GaN/Diamond Interfaces Utilizing AlxGa1-xN as a Phonon Bridge.

Improving the thermal conductance at the GaN/diamond interface is crucial for boosting GaN-based device performance and reliability. In this study, first-principles calculations and molecular dynamics simulations were employed to explore the interfacial thermal conductance of GaN/diamond interfaces with AlxGa1-xN transition layers. The AlxGa1-xN alloy exhibits a lower thermal conductivity than GaN, primarily due to enhanced anharmonic phonon scattering. However, for the interfacial thermal conductance at the GaN/diamond interface, we discovered that introducing an AlxGa1-xN with a high Al concentration (x > 0.5) as a phonon bridge between GaN and diamond can significantly enhance the interfacial thermal conductance. In particular, it increases from 4.79 MW·m-2 K-1 to a maximum of 158 MW·m-2 K-1 at x = 0.75, surpassing the 152 MW·m-2 K-1 achieved by AlN. The AlxGa1-xN alloy has been confirmed computationally as a more efficient phonon bridge, which can provide a valuable theoretical reference for experimentally investigating the thermal management and thermal design of high-power electronic devices based on the GaN/diamond interface.

Synergistically Constructing High-Dielectric Poly(m-phenylene isophthalamide)/Silica/Cellulose Nanofiber Composite Insulation Paper through Dynamic Covalent Chemistry and Hydrogen Bonding.

The rapid advancement of modern power equipment and high-power devices has imposed increasingly stringent demands upon the mechanical and dielectric properties of electrical insulation materials. Herein, we report a poly(m-phenylene isophthalamide) (PMIA) composite insulating paper with excellent dielectric breakdown strength, reliable mechanical properties, and high thermal stability. Enhanced surface activity of PMIA is achieved through surface modification, facilitating the synergistic integration of modified PMIA (MPMIA), bovine serum albumin (BSA)/silica (SiO2), and cellulose nanofiber (CNF) into composite paper using dynamic covalent bonds and hydrogen bonding. The prepared MPMIA-BSA/SiO2-CNF composite paper exhibits a laminated stacked structure with high tensile strength (32.68 MPa) and strain at break (9.57%). Meanwhile, MPMIA-BSA/SiO2-CNF composites have excellent dielectric breakdown strength (24.75 kV/mm) and good temperature resistance. Therefore, the MPMIA-BSA/SiO2-CNF composite paper has a broad application prospect in the field of high-voltage and high-power electrical equipment insulation.

Excellent Low-Frequency Microwave Absorption and High Thermal Conductivity in Polydimethylsiloxane Composites Endowed by Hydrangea-Like CoNi@BN Heterostructure Fillers.

The advancement of thin, lightweight, and high-power electronic devices has increasingly exacerbated issues related to electromagnetic interference and heat accumulation. To address these challenges, a spray-drying-sintering process is employed to assemble chain-like CoNi and flake boron nitride (BN) into hydrangea-like CoNi@BN heterostructure fillers. These fillers are then composited with polydimethylsiloxane (PDMS) to develop CoNi@BN/PDMS composites, which integrate low-frequency microwave absorption and thermal conductivity. When the volume fraction of CoNi@BN is 44 vol% and the mass ratio of CoNi to BN is 3:1, the CoNi@BN/PDMS composites exhibit optimal performance in both low-frequency microwave absorption and thermal conductivity. These composites achieve a minimum reflection loss of -49.9dB and a low-frequency effective absorption bandwidth of 2.40GHz (3.92-6.32GHz) at a thickness of 4.4mm, fully covering the n79 band (4.4-5.0GHz) for 5G communications. Meanwhile, the in-plane thermal conductivity (λ∥) of the CoNi@BN/PDMS composites is 7.31W m-1 K-1, which is ≈11.4 times of the λ∥ (0.64W m-1 K-1) for pure PDMS, and 32% higher than that of the (CoNi/BN)/PDMS composites (5.52W m-1 K-1) with the same volume fraction of CoNi and BN obtained through direct mixing.

Optimized energy storage performances via high-entropy design in KNN-based relaxor ferroelectric ceramics

Dielectric capacitors play an irreplaceable role in complex and integrated electronic systems. However, attaining ultrahigh recoverable energy storage density (Wrec) alongside energy storage efficiency (η) poses a formidable challenge, impeding the advance towards the miniaturization and integration of cutting-edge energy storage devices. In this work, a high-entropy strategy with a viscous polymer process is adopted, bringing about ultrafine grains and polar nanoregions (PNRs) accompanied by enhanced electrical homogeneity and polarization relaxation characteristics. As a result, an ultrahigh Wrec ∼ 7.51 J/cm3 is achieved in a high-entropy KNN-based energy storage ceramic with a high η ∼ 88.4% at 750 kV/cm. Moreover, the ceramic capacitor exhibits a colossal power density reaching approximately 420 MW/cm3 and a discharge energy density of approximately 4.85 J/cm3 at 160 ℃. Impressively, it maintains low variation rates of less than 4% across a broad temperature range from 20 ℃ to 160 ℃. The new approach opens avenues for the design and development of superior dielectric materials used in next-generation high-power pulse devices.

Achievement of ductile-regime removal in fabricating Gaussian curved microstructure processed by micro ball-end milling on soft-brittle KDP surface

Laser-induced damage points (known as defects) would seriously reduce the service life of large-aperture KDP optics in high-power laser devices. The ball-end milling procedure is recognized as an efficient method for creating a Gaussian mitigation pit (GMP) to restore the optical transmission performance of functional KDP crystals by removing defects. Nevertheless, achieving smooth and flawless Gaussian curved microstructures is a massive challenge for soft-brittle KDP crystals. Herein, a judging criterion of the ductile-regime machining for the GMP is developed by the models of uncut chip thickness (UCT) and critical milling depth. Simultaneously, the obtained judging criterion can be validated by the microstructure fabrication experiments. Besides, considering the spindle vibration, plowing effect, and machined surface texture, the influence of spindle speed (n), feed rate (f), and tool mark interval (d) on the surface formation mechanism of the GMP is analyzed, respectively. It can be discovered that the n of up to 60,000 r/min can lead to severe velocity fluctuation of the motion system, increasing the UCT and causing brittle fractures on the KDP surface. A low f can result in an undesirable plowing phenomenon, and a large number of crystal materials are accumulated in the up-cut process. Once the f reaches 72 mm/min, the tool path would fluctuate significantly, resulting in poor GMP surface texture. When the d exceeds 15 μm, the surface quality of the GMP can no longer meet the engineering requirements of the Ra ≤ 50 nm. Moreover, the optimized processing parameters of the microstructure fabrication are 47,800 r/min in the n, 30 mm/min in the f, and 5 μm in the d. This study can provide crucial guidance for obtaining the ultra-smooth and defect-free GMP processed in the ductile regime, which would resultantly possess significant theoretical importance and practical value in enhancing the optical properties of flawed KDP crystals.

Insights into pressure-driven depolarization in PLZST-based antiferroelectric ceramics

Materials showing field-driven antiferroelectric to ferroelectric transformation are interesting for the design of pyroelectric, high strain actuator and high-power dielectric energy storage and discharge devices. The stability of the antiferroelectric and ferroelectric states at room temperature can be chemically tuned by La and Ti co-modification of the antiferroelectric system Pb(Zr1-ySny)O3. Here, we have chosen a composition Pb0.982La0.012(Zr0.60Sn0.30Ti0.10)O3 (PLZST) at the threshold of the antiferroelectric-ferroelectric instability at room temperature and investigated the effect of electric field, temperature and pressure on the stability of the structural-polar states. We show that electric poling transforms irreversibly the antiferroelectric state into a ferroelectric state. Application of hydrostatic pressure ∼100 MPa on the field-stabilized ferroelectric phase, however, restores the antiferroelectric state and depolarizes the system.

Superior energy storage performance in Bi0.5Na0.5TiO3 based ceramics via synergistic design of multi-size domain construction and multiple phase structures

Lead-free dielectric ceramics, as the crucial materials for the development of eco-friendly high pulse power devices, have faced limitations in achieving energy storage performance comparable to lead-based counterparts. A novel strategy was adopted to enhance the energy storage capability of Bi0.5Na0.5TiO3 based ceramics by constructing multiple phase structures and multi-size domain. An ultrahigh energy storage density of 8.0 J·cm−3 and a large efficiency of 88.9 % were achieved. The superior energy storage properties can be attributed to the synergistic effects of multiple phase structures and multi-size domain construction resulted from a significant polarization intensity difference upon Sr(Zr0.2Ti0.8)O3 doping. Even more surprising, the 0.6Bi0.5Na0.5TiO3-0.4Sr(Zr0.2Ti0.8)O3 ceramic exhibited excellent aging resistance, with variation in discharge energy density (Wd) < ±7% over a temperature range from 20 to 150°C, variations in recoverable energy density (Wrec) < ±8.3 %, and efficiency (η) < ±5.6 % over a frequency range from 1 to 50 Hz and across 105 cycles. The finding in this work not only provides an effective candidate for high power pulse capacitors, but also provides ideas for the study of high energy storage performance of BNT and the related lead-free ceramics.

Synergetic effect of diamond particle size on thermal expansion of Cu-B/diamond composite

Diamond particles reinforced Cu matrix (Cu/diamond) composites have promising applications for heat dissipation of high-power electronic devices because of their high thermal conductivity and suitable coefficient of thermal expansion. The effect of diamond particle size on thermal conductivity has been addressed; however, the effect of diamond particle size on thermal expansion still needs to be clarified. In this study, Cu-B/diamond composites with various diamond particle sizes ranging from 66 μm to 701 μm were fabricated to assess the impact of diamond particle size on the thermal expansion behavior. The composites exhibit low and adjustable coefficient of thermal expansion (CTE) values of 4.58–6.63 × 10−6 K−1, which align with 4–8 × 10−6 K−1 of widely employed semiconductors. The CTE of the Cu-B/diamond composites first decreases and then increases with increasing diamond particle size, which arises from a synergetic effect of interfacial bonding strength and matrix strengthening effect. As the diamond particle size is smaller than 272 μm, the interfacial bonding strength rises with increasing particle size, enabling the diamond particles to restrain the expansion of the Cu matrix more effectively and to reduce the CTE. As the diamond particle size exceeds 272 μm, the dislocation density in the Cu matrix continually decreases with increasing particle size, reducing the strength increment in the Cu matrix and increasing the CTE. The effect of thermal cycling on the thermal expansion of the Cu-B/diamond composites was also investigated, and all the composites show an increase in the CTE after 100 thermal cycles. Notably, the composite with 272 μm diamond particle size exhibits the lowest CTE increment. It shows a CTE value of 5.29 × 10−6 K−1 after thermal cycling, still compatible with the semiconductors for electronic packaging applications.

Effect of trace silver on the conductivity and softening temperature of high conductivity and high heat resistance pure copper

As a conductor material for high-power electronic devices, pure copper requires both conductivity and softening temperature. The effects of 0% (7NCu), 0.015% (Ag150), 0.030% (Ag300), 0.045% (Ag450) and 0.059% (Ag590) Ag on the microstructure, conductivity and softening temperature of pure copper were studied. The results show that trace Ag can refine the microstructure of pure copper and improve the mechanical properties at room temperature and high temperature. The hardness values of 7NCu, Ag 150, Ag 300, Ag 450 and Ag 590 were 112, 119.06, 122.14, 123.54 and 125.68HV, respectively, and the softening temperatures were 195, 310, 336, 344 and 345 °C, respectively. At the same time, the conductivity of the samples with different Ag content was more than 100.5 %IACS. The similar structure of Ag and Cu has little effect on the conductivity. On the one hand, the trace Ag element soluble in the matrix causes lattice distortion, inhibits recrystallization nucleation and grain boundary migration. On the other hand, the Ag element is polarized at the grain boundary, which reduces the grain boundary energy, decreases the atomic diffusion and increases the recrystallization temperature.

Experimental study on the thermal performance of a novel vapor chamber manufactured by 3D-printing technology

Vapor chamber holds great application potential in the field of heat dissipation for high-power electronic devices. This study developed a novel vapor chamber using 3D-printing technology to enhance heat dissipation for compact electronic devices. The vapor chamber was constructed from aluminum alloy with a structural dimension of 60×60×30mm3. In this work, the extended condensation structure of the vapor chamber was combined with an external cooling structure, resulting in a 729 % increase in the external heat dissipation area compared to the evaporation area in a limited space. Extensive experiments were conducted using deionized water as the working fluid under various cooling conditions and heat loads. The results showed that the vapor chamber was capable of maintaining a low thermal resistance at high power and high heat flux conditions, with a minimum thermal resistance of 0.087 °C/W when the heat load was 1000 W. At a cooling water flow rate of 0.1 L/s, the vapor chamber demonstrated the capacity to withstand a critical heat load of up to 1600 W, with the heat flux of 326 W/cm2. Compared to conventional vapor chambers, this novel vapor chamber is better able to achieve stable and efficient heat dissipation under high power and high heat flux conditions, especially in a limited space.

Experimental investigation of steady state power balance in double null and single null H mode plasmas in MAST Upgrade

Global power balance calculations in steady state H mode plasmas varying the distance between separatrices (drsep) and the divertor configuration have been performed in MAST Upgrade. As drsep becomes more negative, more of the power crossing the separatrix goes to the lower divertor. The inner divertor receives a higher fraction of the power exhaust in a Super-X divertor plasma compared to a conventional divertor plasma at similar negative drsep, which is a concern for high power devices employing alternative divertor configurations for power exhaust handling. Global power accounting suggests >30% of the input power is unaccounted for with the power loss channels quantified in this work. Charge exchange and orbit losses from the NBI could account for a large fraction of unaccounted power but it is not possible to precisely determine this without further diagnostic calibration.

Gas-Generation Mechanism of Silicone Gel in High-Temperature Thermal Decomposition for High-Voltage and High-Power Device Encapsulation

Gas-Generation Mechanism of Silicone Gel in High-Temperature Thermal Decomposition for High-Voltage and High-Power Device Encapsulation

A self fire-extinguishing and high rate lithium-fluorinated carbon battery realized by ethoxy (pentafluoro) cyclotriphosphazene electrolyte additive design

The lithium/carbon fluoride (Li/CFx) battery has attracted significant attention due to its highest energy density among all commercially available lithium primary batteries. However, its high energy density also poses a significant risk during thermal runaway events, and its poor electrochemical performance at high discharge current densities limits its application in high-power devices. In this study, we propose a flame-retardant and interface-affinity enhancing electrolyte additive, ethoxy (pentafluoro) cyclotriphosphazene (PFPN), to regulate the electrolyte in Li/CFx batteries. The PFPN molecules participate in the lithium solvation shell, and its fluorine groups shows better affinity with the carbon fluoride cathode compared to traditional carbonate electrolytes. Furthermore, as a bulky molecule, PFPN reduces the desolvation energy of Li+ ions after participating in lithium ion coordination, making it easier for Li+ ions to be utilized at the carbon fluoride cathode, significantly enhancing the battery's rate performance. In a carbonate electrolyte containing 16 % PFPN additive (1 M LiBF4/EC+DMC, volume ratio 1:1), the CFx cathode delivers 277 % higher capacity at a current density of 1 A g−1 compared to a CFx cathode without the additive. Additionally, due to the ability of PFPN to produce fluorine and phosphorus radicals at high temperatures that interrupt the combustion chain reaction, the electrolyte can achieve up to 10 instances of zero-second self-extinguishing, reducing the battery self-extinguishing time by 90 %. This study is the first to investigate the safety and flame-retardant electrolyte design of carbon fluoride batteries, providing a method to improve the power performance and safety of Li/CFx batteries at the same time.