High Piezoelectric Coefficient D33 Research Articles

Simultaneously Achieved High Piezoelectricity and High Resistivity in Na0.5Bi4.5Ti4O15-Based Ceramics with High Curie Temperature.

Good piezoelectricity and high resistivity are prerequisites for high-temperature acceleration sensors to function correctly in high-temperature environments. Bismuth layered structure ferroelectrics (BLSFs) are promising candidates for piezoelectric ceramics with excellent piezoelectric performance at high temperatures, high electrical resistivity, and high Curie temperatures (Tc). In this study, (LiMn)5+ is substituted for Bi at the A-site, and Ce-doping is performed to replace Ti ions in Na0.5Bi4.5Ti4O15, which achieves the desired combination of high piezoelectric coefficients and high resistivity. Herein, we prepared Na0.5Bi3(LiMn)0.9Ti4-xCexO15 high-temperature piezoelectric ceramics, achieving a high piezoelectric coefficient d33 of 32.0 pC/N and a high resistivity ρ of 1.2 × 108 Ω·cm (at 500 °C), and a high Curie temperature of 648 °C. It is important that the d33 variation remains within 8% over a wide temperature range from 25 °C to 600 °C, demonstrating excellent thermal stability. Structural characterization and microstructure analysis showed that the excellent piezoelectric coefficient and high resistivity of cerium-doped Na0.5Bi4.5Ti4O15-based ceramics are attributable to the synergistic effects of structural characteristics, defect concentration, refined grain size and domain morphology. This study demonstrates that the superior properties of Na0.5Bi3(LiMn)0.9Ti4-xCexO15 ceramics are crucial for the stable operation of high-temperature accelerometer sensors and for the development of high-temperature devices.

Superior piezoelectric performance in holmium-substituted high-TC Bi5Ti3FeO15

High-temperature piezoelectric materials are essential for advanced sensor technologies, yet achieving both superior piezoelectric properties and a wide operating temperature range remains a persistent challenge. Bismuth titanate-ferrite (Bi5Ti3FeO15) is a promising candidate due to its notably high Curie temperature (TC) of approximately 761 °C. However, its low intrinsic piezoelectric response and limited poling efficiency, attributed to insufficient direct-current (dc) resistivity, have restricted its broader utilization. To address these issues, we explored compositional modifications by partially substituting A-site bismuth ions with holmium ions (Bi5-xHoxTi3FeO15, BTF-100xHo), aiming to enhance both piezoelectric performance and electrical resistivity. Comprehensive characterization was performed on the holmium-substituted ceramics, examining their crystal structure, microstructural attributes, and piezoelectric properties. Our findings reveal that the holmium-substituted Bi5Ti3FeO15 compositions exhibit significantly improved piezoelectric behavior in comparison to their unmodified counterparts. The optimized BTF-4Ho composition demonstrates a high piezoelectric coefficient (d33 = 23.1 pC/N) and an elevated TC of 795 °C. Moreover, the BTF-4Ho composition maintains stable electromechanical coupling across a wide temperature range, underscoring its potential for high-temperature sensor applications.

High mechanical quality factor and high piezoelectric coefficient achieved via acceptor-modified invisible boundary

High mechanical quality factor (Qm) and high piezoelectric coefficient (d33) are desired for high-power applications of piezoelectric ceramics. However, achieving them based on currently known mechanisms has proven challenging because of the tradeoff between Qm and d33. Here we report a surprising finding that this tradeoff can be overcome via acceptor-modified invisible-boundary (IB). High Qm ∼1096 and high d33 ∼337 pC/N were achieved and superior to those of both lead-free and commercial lead-based piezoceramics. The acceptor-modified IB was demonstrated in Fe-doped BaTi0.89Hf0.11O3 ceramics, where the acceptor doping in the IB composition increases Qm by ∼8.6 times and d33 by ∼1.5 times, being different from the acceptor doping effect in morphotropic/polymorphic phase boundary (MPB/PPB) compositions of increasing Qm but decreasing d33. We predict that our finding may also be made in other acceptor-modified IB systems and the obtained high-performance BaTiO3-based piezoceramic could provide an alternative to lead-based piezoceramics in underwater applications.

A-site and B-site cation doping engineering: A strategy to enhance strain in Pb(Zr, Ti)O3-based ceramics

Pb(Zr, Ti)O3 piezoelectric ceramics with high strain and low hysteresis are essential for ultra-precision driving and positioning in advanced manufacturing and control fields. In this study, the doping engineering via dual cations was utilized to improve the strain characteristics of Pb(Zr, Ti)O3-based ceramics, and thus the ceramics 0.3PbTiO3–0.65PbZrO3–0.05(Bi0.3La0.7)(Zn0.5Ti0.5)O3–x wt% (La2O3+Nb2O5) were probed. Results show that excellent comprehensive performance is fulfilled for the ceramic with x = 5, i.e., a high strain S = 0.45 %, low strain hysteresis Hy =16 %, and high piezoelectric coefficient d33 = 585 pC/N. For modified ceramics, the large electrostrictive strain stems from the synergistic role of lattice distortion and transformation of electric domain morphology due to cations doping. This study demonstrates a productive cation co-doping engineering to enhance the electrostrictive strain in Pb(Zr, Ti)O3-based ceramics, which enables the ceramics to have good features applied in piezoelectric actuators.

Improving piezoelectric performance in PMN-0.26 PT single crystal via low frequency AC poling

In this experiment, the alternating current poling (ACP) was applied to the 0.74 Pb(Mg1/3Nb2/3)O3-0.26PbTiO3 (PMN-0.26 PT) single crystal to explore the impact of low frequency (0.1 Hz) ACP on electrical performance. When the poling condition is loading 5 cycles at 14 kV/cm, high piezoelectric coefficient d33 of 1780 pC/N and giant dielectric constant of 5881 are obtained for the ACP treatment sample, enhanced 42.4 % and 14.3 % by contrast with the conventional direct current poling (DCP), respectively. The values of coercive field, maximum strain, and converse piezoelectric constant d33∗ vary considerably around the ferroelectric phase transition detected by polarization-electric field, as well as bipolar and unipolar electric field-induced strain hysteresis loops. In addition, the domain configuration of the ACP sample presents a more periodic stripe-like structure with narrower width and relatively more uniformity after three months aging as compared with the DCP sample, showing the importance of domain engineering in enhancing electrical performance of ferroelectric single crystals.

Systematic approach for high piezoelectric AlN deposition

Aluminum nitride (AlN) is a wide band gap semiconductor with interesting piezoelectric properties for many applications, including micromechanical systems (MEMS), acoustic wave sensors or energy harvesting devices. The influence of DC reactive magnetron sputtering (DCRMS) deposition parameters on the structural, crystalline, and piezoelectric properties of AlN thin films are presented. The systematic approach of Design of Experiments (DoE) has been used to evaluate the role of magnetron power, nitrogen and argon flows on the deposition process and the film properties. Magnetron power and argon flow have resulted to be the parameters causing the most significant effects on the deposition rate. AlN films have been deposited with a high crystal quality, showing low values of FWHM (0.28) and c-axis orientation parallel oriented respect to the growth direction, as evidenced by X-ray diffraction (XRD) analysis and high-resolution transmission electron microscopy (HRTEM). These samples also showed a high piezoelectric coefficient (d33) of 5 pC/N for AlN thin films. This work highlights the importance of deposition parameters on the properties of the film and the important role that DoE play for its optimization with a minimum number of depositions.

Ultrahigh energy harvesting ability of PVDF incorporated with 2D halide perovskite nanosheets via interface effect

Two-dimensional (2D) perovskites have recently emerged as an new family of ferroelectrics and attracted extensive attention for their specific surface interface characteristics benefitting from the unique structure by inserting hydrophobic organic cations into conventional three-dimensional frameworks. In this study, 2D metal–organic perovskite nanosheets, (C4H9NH3)2CsPb2Br7, ((BA)2CsPb2Br7), were successfully synthesized by facile temperature-cooling method and introduced into poly (vinylidene fluoride) (PVDF) polymer fibers to construct flexible piezoelectric energy harvester (PEH). (BA)2CsPb2Br7/PVDF nanofibers reveal a high piezoelectric coefficient (d33) of 63.3 pm/V, which is 2.9 times of the PVDF polymer (21.7 pm/V). Principally, the PVDF composite with 5 wt% (BA)2CsPb2Br7 nanosheet filler assumes an superior electroactive phase amount of about ∼ 93 % profiting from the interfacial interaction between BA+ cations of (BA)2CsPb2Br7 and the dipoles of PVDF. The PEH based on (BA)2CsPb2Br7 nanosheets embedded in PVDF fibers showed a maximum output voltage, 135 V, which is almost 17 times of the PEH based on neat PVDF fibers. Furthermore, the interfacial interaction between (BA)2CsPb2Br7 and PVDF was analyzed by first principle DFT study which reveals electrons migrate and the interfacial polarization between the interface. Simultaneously, (BA)2CsPb2Br7/PVDF composite fibers based PEH reveals exceptional long-term stabilities and durability. More attractively, the exceptional performance of this fabricated PEH evinces a pressure sensitivity of ∼ 7.3 V/N and bio-mechanical harvesting behavior arising from varied human motions, such as beating, pressing, twisting, walking and running. This cost-effective and high performance of (BA)2CsPb2Br7/PVDF based PEH is favorable for the continuation of 2D halide perovskites for further application in new energy and biomechanical filed.

PNN-PST-PT ferroelectric ceramics with ultrahigh piezoelectricity and superior electromechanical performance for high quality piezo-sensors

A novel ferroelectric ceramic system, Pb(Ni1/3Nb2/3)O3–Pb(Sc1/2Ta1/2)O3–PbTiO3 (PNN-PST-PT), with ultrahigh piezoelectricity and super electromechanical performance is developed. The microstructure and crystal structure of PNN-PST-PT ceramics, along with their electrical properties, were examined regarding PNN content. The results indicated that the room-temperature dielectric constant was considerably enhanced with PNN content increasing and the values of Pr, Pmax, and Ec steadily declining. The optimal performance was achieved in the 0.4PNN-0.235PST-0.365 PT composition with a high piezoelectric coefficient (d33) of 1028 pC/N and an electromechanical coupling factor (kp) of 0.69. Strong piezoelectric response is attributed to the coexistence of R and T phases as well as the enhanced relaxation characteristics, which manifest as a specific polarization configuration resulting from the local structural distortion caused by the co-occupation of ions with different radii at the B-site. These suggest that PNN-PST-PT ceramics can be a desirable material for applications in high-quality piezosensors, actuators, etc.

Sm-doped PZT thin film with high piezoelectric properties by sol-gel method

In this study, Pb(Zr0.54Ti0.46)O3 films were prepared by the sol-gel method with Sm doping concentrations of 0, 0.5, 1, 1.5, 2, and 3 mol. %. Their surface morphology, density, crystal structure, piezoelectric, dielectric, and ferroelectric properties were characterized. The results indicated that, unlike Sm-doped lead zirconate titanate (PZT) ceramics, all Sm-PZT films exhibit a significant increase in the grain size compared to undoped PZT films. Moreover, Sm doping affected their crystal orientation and significantly enhanced their piezoelectric coefficient d33 and remnant polarization (Pr). Notably, the Sm-PZT film with a doping concentration of 1.5 mol. % exhibited optimal (100) orientation, achieving a high piezoelectric coefficient d33 of 279.87 pm/V, 4.55 times that of the non-doped PZT films.

High-precision BaTiO3 piezoelectric ceramics via vat photopolymerization 3D printing

BaTiO3 ceramics with high precision and superior performance are fabricated by vat photopolymerization 3D printing technology. The curing behaviors and photosensitive mechanisms are systematically investigated. Through the optimization of printing parameters, BaTiO3 ceramics with a high relative density of 95 % and few defects are obtained. Notably, the sintered BaTiO3 ceramics exhibit impressive properties, including a high piezoelectric coefficient d33 of 201 pC/N and strong ferroelectric characteristics with a maximum polarization Pmax of 31.4 μC/cm2 and residual polarization Pr of 18.5 μC/cm2. More importantly, a series of complex BaTiO3 structures including the body-centered cubic lattice and triply periodic minimal surface (TPMS) structures are created perfectly with the feature size as fine as 75 μm. Compared with other reported BaTiO3 structures printed by vat photopolymerization and material extrusion technologies, this work realizes a much higher printing resolution. The excellent performance and high precision of these BaTiO3 ceramics make them great potential for practical applications in piezoelectric components.

Ultra-high electrostrain in flux-grown (Bi0.5Na0.5)TiO3-0.06BaTiO3-0.03(K0.5Na0.5)NbO3 single crystals around the nonergodic/ergodic crossover region

In this study, we successfully grew large-sized single crystals (12 × 11 × 8 mm³) of 0.91Bi0.5Na0.5TiO3-0.06BaTiO3-0.03(K0.5Na0.5)NbO3 (BNT-6BT-3KNN) with a <100>c orientation using the flux growth method. This marks the first instance of achieving such crystals. The single crystals display double hysteresis loops, featuring a maximum polarization of ∼64.6 μC/cm2. Capitalizing on the nonergodic/ergodic boundary, the single crystals exhibit a substantial strain (Sm) of 0.91% at the maximum electric field of 20 kV/cm and an exceptionally high inverse piezoelectric coefficient d33* of 4550 pm/V. The creation of long-range domains from needle-like nanodomains and polar-nano regions under the application of an electric field was confirmed through bright-field transmission electron microscopy and piezoresponse force microscopy analyses. The phase diagram for BNT-6BT-3KNN single crystals was constructed by analyzing the temperature dependence of dielectric, ferroelectric, and electrostrain behaviors.

Ultra-high strain in Bi0.5(Na0.41K0.09)TiO3 Pb-free piezoelectric ceramics modified by Sr(Hf0.5Sb0.4)O3

The lead-free piezoelectric ceramics used in piezoelectric actuators have attracted extensive attention owing to their substantial electric-field-induced strain. In this study, The (1-x)Bi0.5(Na0.41K0.09)TiO3-xSr(Hf0.5Sb0.4)O3 (BNKT-xSHS) piezoelectric ceramics were synthesized using the conventional solid-state reaction method. The impact of SHS substitution on the microstructure and electrical properties was systematically explored. Among them, the BNKT-0.015SHS sample, featuring ergodic relaxor states, demonstrates a high piezoelectric strain coefficient (d33*) of 785 p.m./V under a low electric field of 50 kV/cm(Strain = 0.392 %). It exhibits a repeatable strain value of 0.47 % under an 80 kV/cm electric field(d33* = 590 p.m./V). Moreover, the strain values remain around 0.4 % between room temperature and 100 °C, with variations within 90 %. The heightened repeatable strain response is considered to be linked to the electric field-induced reversible phase transition occurring within the ergodic relaxor state. The higher strain temperature stability is ascribed to the coexistence of quadrilateral polar nanoregions and rhombic polydomain nanoregions. This study provides an effective example for achieving significant strain responses, presenting a feasible candidate material for applications in piezoelectric actuators.

Simultaneously enhanced of energy storage and energy harvesting performances of [(Bi0.5Na0.5)TiO3–BaTiO3] ceramics by addition of SrTiO3

As is well known, relaxor dielectrics are characterized by high energy storage efficiency (η), while high recoverable energy storage density (Wrec) can be achieved by anti-ferroelectric ceramics. Herein, our approach is to find relaxor- anti-ferroelectric coexistence phases of (Bi0.5Na0.5)TiO3- BaTiO3 ceramics for achieving high performance in energy storage and energy harvesting as well. Therefore, [(0.9-x) ( Bi0.5Na0.5)TiO3-xSrTiO3-0.1BaTiO3] (abbreviation (0.9-x) NBT-0.1BT-xST) (0.0 ≤ x ≤ 0.4) were synthesized via the solid-state reaction route in air. The tolerance factor (τ) increased from 0.9901 to 0.9998 when ST-content increased from 0.0 to 0.4, indicating an increase in crystal lattice symmetry. The FT-IR de-convolution vibration modes shown in the TiO6 octahedra exhibit two peaks at ∼550 and 650 cm−1, which indicate present coexistence phases of the crystal structure. Ferroelectric to relaxor phase crossover has been detected by the addition of ST with the present anti-ferroelectric phase in particular dopant ST = 0.2. The increasing into the diffused phase transition (γ) is signified by enhancement of the relaxor degree of NBT-BT at high content of ST. The rapidly suppressed remnant polarization (Pr) at high content of ST is due to substitute iso-valence (Sr2+) by tri-valence (Bi3+) and mono-valence (Na1+). Ultrahigh Wrec = 1.13 J/ cm3 with excellent η = 92.62% were obtained at ST = 0.3 at low electric field (E = 110 kV cm−1). A remarkable response of the strain with a high converse piezoelectric coefficient ( d33* = 390.47 pm V−1) at ST = 0.2 was obtained due to decreasing the non-revisable 180° domain switching. Based on the obtained results, the addition of ST to NBT-BT ceramics can provide a head start in the implementation of ceramic capacitors for potential effective into energy harvesting and energy storage applications.

Remarkable enhancement in piezoelectric performance of [001] textured Na0.4K0.1Bi0.5TiO3 ceramic

This study explores the dependence of dielectric and piezoelectric properties on the grain morphology, orientation, and electric field in the [001] textured Na0.4K0.1Bi0.5TiO3 (NKBT-T) piezoceramics, fabricated via reactive template grain growth and tape-casting methods. A high degree of [001] texturing with Lotgering factor (f) of ∼0.92 was confirmed by X-ray diffraction, electron backscattered diffraction, and bulk texture measurements. A large average plate length of ∼8.5 ± 1 μm with an aspect ratio of ∼11 was achieved in NKBT-T ceramic. An extremely large value of piezoelectric voltage coefficient (g33) of ∼100×10−3 Vm/N was observed in poled NKBT-T ceramics, originating from a low dielectric constant (∼230) and high piezoelectric charge coefficient (d33 ∼205 pC/N). The transduction coefficient (d33•g33) of NKBT-T ceramic was estimated at ∼20,000 × 10−15 m2N−1 and the mechanical energy harvesting responses of ∼1.8 µA and ∼4 V were recorded in the NKBT-T ceramic-based piezoelectric device.

Attempt for excellent piezoelectric performance in Sb-free (K,Na)NbO3-based ceramics

Piezoelectric temperature stability is often a very important item for piezoelectric materials when putting them into practical applications like filters and ultrasonic transducers. Phase transitions of (K,Na)NbO3-based compositions that contain neither toxic Pb nor Sb elements were tailored to simultaneously acquire enhanced piezoelectric properties and good piezoelectric temperature stability in this study. Specifically, dense 0.94(K0.48Na0.52)NbO3-0.03BaZrO3-0.01BaSnO3-0.02(Bi0.5Na0.5)ZrO3 ceramic and its further compositionally modified one by 1 wt% MnO2 were prepared. Both of these two ceramics display quite weak piezoelectric temperature dependence in the usage temperature range between −30 °C–100 °C, but the one modified by MnO2 has the significantly improved piezoelectric properties with a high piezoelectric coefficient d33 of 310 pC/N and large electromechanical coupling factors kp and k33 of 0.57 and 0.73 at room temperature. The obtained excellent piezoelectric performance is considered to be associated closely with the stable piezoelectric characteristic of the orthorhombic phase and the diffused rhombohedral-orthorhombic and orthorhombic-tetragonal phase transitions.

Mechanism and application of lead-free KNN-based ceramics with superior piezoelectricity

Piezoelectric ultrasonic energy harvesters (PUEHs) have recently attracted increasing attention. For minimizing the energy losses during energy transfer, it is crucial for core piezoelectric materials to maintain high piezoelectric coefficient (d33), mechanical quality factor (Qm), and piezoelectric voltage coefficient (g33). Herein, a simple way of hardening strategy improves the piezoelectric properties of KNN-based ceramics, combined with optimizing grain growth. The enhanced d33 (∼340 pC/N), high Qm (∼211) and TC (∼305 °C) are obtained simultaneously in this system, accompanied by superior d33×g33=8770×10−15 m2/N. Through variable temperature resonance test, the polarization rotation diversity caused by phase structure difference is found to closely related to the temperature stability of Qm value. A prototype of PUEH device was further designed and fabricated, with adjustable ultrasound-induced output voltage up to 8.2 V. Our work exhibits an effective way to improve performance of PUEHs by optimizing piezoelectric materials, which is helpful for further developing PUEHs.

Experimental and theoretical study of Gd2O3 added pseudo-tetragonal Bi3TaTiO9-based ceramics for ferroelectric, electric and high-temperature piezoelectric applications

The present global energy crisis, along with the development of modern technologies, has compelled the scientists to search for smart materials, which possess the multifunctional properties simultaneously. Among such materials, bismuth-layered structure ferroelectrics (BLSFs) containing a perovskite structure have demonstrated the tendency to play a vital role. Herein, we report an engineered Gd2O3 added Bi3TiTa0·5Nb0·5O9 (BTTN) based material with composition Bi3TiTa0·5Nb0·5O9:xwt%Gd2O3 (BTTN:xGd) with x = 0–0.20 ceramics to investigate the ferroelectric, electric, piezoelectric and dielectric properties of the material. Highly dense (relative density of ∼96%) BTTN:0.15Gd has shown the best merits among all other compositions with improved remnant polarization (Pr ∼ 7.86 μC/cm2), energy conversion efficiency (ƞ) of ∼63.48%, resistance of ∼2.2 × 1010 Ω and high piezoelectric co-efficient (d33 ∼ 25 pC/N) at room temperature, which are much improved than pure BTTO or BTTN ceramics. Nonetheless, ceramic has shown the stable resistivity of ∼104 Ω at 500 °C, with a stable d33 value of 22 pC/N (just 12% drop) after annealing at 600 °C. The ferroelectric to paraelectric phase transition of ceramic with the highest dielectric constant is reported at Curie temperature (TC) of 859 °C. Additionally, Density-Functional-Theory (DFT) and Density-Functional-Perturbation-Theory (DFPT) measurements are performed by employing generalized gradient approximation using the Quantum-ESPRESSO code. Structural, ferroelectric and electronic properties of BTTO, BTTN and Gd-added BTTN compounds are investigated. The calculated formation energies confirmed the thermodynamic stability of pseudo-tetragonal Gd-added BTTN compounds. Using the Berry-phase approach for piezoelectric materials, the calculated maximum polarization is 54.00 μC/cm2, which is in agreement with values obtained experimentally. Mentioned outcomes of the material clearly represent the potential of the BTTN:0.15Gd ceramic for the utilization in high-temperature piezoelectric devices.

Development of multifunctional membranes via plasma-assisted nonsolvent induced phase separation

Demands on superhydrophobic, self-cleaning and piezoelectric membranes have gained significantly due to their potential to overcome global shortages in clean water and energy. In this study, we have discovered a novel plasma-assisted nonsolvent induced phase separation (PANIPS) method to prepare superhydrophobic, self-cleaning and piezoelectric poly(vinylidene difluoride) (PVDF) membranes without additional chemical modifications or post-treatments. The PANIPS membranes exhibit water contact angles ranging from 151.2° to 166.4° and sliding angles between 6.7° and 29.7°. They also show a high piezoelectric coefficient (d33) of 10.5 pC N−1 and can generate a high output voltage of 10 Vpp. The PANIPS membranes can effectively recover pure water from various waste solutions containing Rose Bengal dye, humic acid, or sodium dodecyl sulfate via direct contact membrane distillation (DCMD). This study may provide valuable insights to fabricate PANIPS membranes and open up new avenues to molecularly design advanced superhydrophobic, self-cleaning, and piezoelectric membranes in the fields of clean water production, motion sensor, and piezoelectric nanogenerator.

Ultrahigh Piezoelectric Response Obtained by Artificially Generating a Large Internal Bias Field in BiFeO3–BaTiO3 Lead‐Free Ceramics

AbstractPiezoelectric actuators are vital devices that convert electrical signals into mechanical strain, offering rapid and precise responses. Lead‐based piezoceramics have traditionally been the preferred choice for commercial piezoelectric actuators, while the low Curie temperature and the rising environmental concerns hinder their applications at high temperatures. In this study, a novel strategy is proposed to achieve high piezoelectric responses in lead‐free 0.67Bi1.05FeO3–0.33BaTiO3 (67BF‐33BT) ceramics with high Curie temperature by artificially generating a large internal bias field through repeat poling and aging treatments. A comprehensive exploration of how this internal bias field responds to applied electric fields and temperature variations has been conducted. The results suggest that the internal bias field originates from two aspects, one arises from the free charges that compensate for the depolarization field, while the other is attributed to the highly oriented defect dipoles. As a result of this internal bias field, the ceramics exhibit asymmetric strain–electric field (S–E) behaviors, resulting in a high strain (ε = 0.21%) and an extremely high piezoelectric coefficient (d33* = 1033.70 pm V−1) when subjected to low electric field (20 kV cm−1), along with good temperature stability from room temperature (RT) to 100 °C.

Simultaneously achieved high piezoelectricity and resistivity in CaBi2Nb2O9-based ceramics with high curie temperature

To guarantee the functional operation of high-temperature piezoceramics in harsh circumstances, both large piezoelectricity and superior resistivity are prerequisites. However, it remains a formidable challenge to achieve these objects. Herein, we report Ce-doped CaBi2Nb2O9-based high-temperature polycrystals, which can simultaneously deliver a high piezoelectric coefficient d33 of 21.8 pC/N and decent resistivity ρ of 7.1 × 107 Ω﹒cm at 500 °C, along with a high Curie temperature of 916 °C. More encouragingly, the materials are also gifted with exceptional thermal stability ( < 10% variation of d33 in a broad range from ambient temperature up to 900 °C). In-depth multiscale structural characterizations unveil that the outstanding comprehensive performance of Ce-doped CaBi2Nb2O9-based ceramics originate from the synergistic effects of refined grain size and domain morphology, and reduced defect concentration. This work not only demonstrates that CaBi2Nb2O9-based ceramics hold enormous potential for high-temperature implements, but also offers prospects to exploit high-performance high-temperature piezoceramics.