Black phosphorus few layers (BP-FL) were synthesized by liquid exfoliation method. P-type BP-FL (phosphorene)/Al junction as Schottky diode on fluorinated Tin oxide (FTO) were fabricated. Highly sensitive Schottky photodiodes were obtained by changing the work function of electrodes using two nanostructures BP-FL/Al (D1) and BP-FL/Au (D2). The electrical and optical characteristics of the Schottky photodiodes were analyzed using I-V measurements which showed a near-ideal Schottky behavior, including low threshold voltage (Vth (D1) = 0.40 V, Vth (D2)= 0.11 V), appropriate potential barrier height (ϕB (D1) = 1.67 V, ϕB (D2) = 0.67 V), ideality factor (n (D1) = 2.00, n (D2) = 2.88), reverse saturation current density (J0 (D1) = 40 μA/cm2, J0 (D2) = 40 mA/cm2) and rectification factor (RF) (R (D1) = 44 at ±1 V and R (D2) = 2.7 at ±1 V) also static and dynamic resistances. Photoresponsivity (R), external quantum efficiency (EQE) and Photodectivity, as optical properties, were measured by exposing them to the red, green and blue lights. Furthermore, the dynamic rectifying application of the device was demonstrated. The highest operation frequency reached 1.197 MHz, which was the highest value reported so far for phosphorene-based Schottky diode with asymmetric electrodes.