High-performance UV Research Articles

Dissecting the natural phytochemical diversity of carrot roots with its colour using high performance liquid chromatography and UV–Visible spectrophotometry

The research provides insights into the phytoconstituents of black, orange and red carrots (Daucus carota subsp. Sativus (Hoffm.) Schübl. & G. Martens), a highly nutritious food crop widely appreciated across age groups. Recognising carrots as a repository of health-promoting compounds, our study employs UV–Visible spectrophotometric and HPLC methods to discern significant variations in bioactive components among carrot varieties. Black carrots emerge as potent contenders, displaying the highest levels of total phenolics (2660 ± 2.29 mg GAE/100 g F W.), total flavonoids (831 ± 1.74 mg QE/100 g F W.), proanthocyanins (10910 ± 1.11 mg CE/100 g F W.), and tannins (713 ± 0.84 mg/100 g F W.). Red carrots, conversely, showcase higher anthocyanin content (6870 ± 1.85 mg CyGE/100 g F W.) by UV–Vis spectrophotometry. Additionally, orange carrots exhibit heightened β-carotene levels, confirmed at 0.03 μg/mg through HPLC. HPLC analysis unveils substantial chlorogenic acid variability (1.29 μg/mg) in black carrots, accompanied by the discovery of unique compounds such as cryptochlorogenic acid (0.05 μg/mg), caffeic acid (0.01 μg/mg), ferulic acid (0.11 μg/mg), methyl caffeate (0.01 μg/mg), and quercetin (0.02 μg/mg), marking the first detection of methyl caffeate in black carrots. The analytical methodology was meticulously validated encompassing optimal parameters such as linearity, precision, limit of detection, limit of quantification, accuracy, and robustness, within the range. In conclusion, our study underscores the health benefits of black carrots due to their rich polyphenolic content and endorses orange carrots for elevated β-carotene levels. These findings contribute to a deeper understanding of the diverse phytoconstituents in carrots, aid in informed dietary choices for improved health.

High performance self-powered UV–visible photodetectors based on ZnO@CdS/PEDOS heterojunctions

In this study, we report the design and development of a high-performance self-powered UV–visible photodetector (UV-Vis PD) based on ZnO@CdS /poly(3,4- ethylenedioxyselenophene) nanoarrays (ZnO@CdS/PEDOS), in which ZnO nanorods (NRs) were modified with CdS to address the limitations of ZnO NRs-based photodetectors in detecting both UV and visible light. The findings of this study demonstrated that the modification of ZnO NRs with CdS led to the formation of a type II heterojunction. This modification not only enhanced the detection capability of the photodetectors under UV (365 nm) light but also enabled efficient detection under visible light (450 nm). The R and D* of the ZnO@CdS/PEDOS device were 7.68× 10−3 A/W and 5.62×1011 Jones, respectively, with a τr of 0.19 s using 0 V and a UV light power (365 nm) of 0.32 mW/cm2. In addition, using a bias voltage of 0 V and a visible light (450 nm) at 0.32 mW/cm2, the R was 2.53×10−3 A/W and D* was 3.41×1010 Jones of the device were, the τr/τf were 0.23/0.29 s, respectively. An excellent performance self-powered PD in the dual-wavelength range was constructed.

High performance of UV photodetectors by integration of plasmonic Ag nanoparticles on GaN

High-performance ultraviolet photodetectors have attracted much attention due to their various potential applications from household to universal. On basis of this, in this work, a high – performance and photoresponse enhancement UV photodetector based on Ag NPs/GaN heterojunction was demonstrated. By incorporating of Ag nanoparticles, light confinement determined by Ag nanostructure offers an effective approach to break through the limitation of the light-mater interaction within the photoactive layers of photodetector. Various size and elemental composition of Ag NPs are fabricated on GaN lead to significant enhancement of photocurrent in UV photodetector. Consequently, an outstanding photoresponsivity of 89 A/W, external quantum efficiency of 2.8 × 103% at low bias voltage of 0.3 V were achieved. The improve photo-response of the Ag NPs-decorated GaN-based photodetector is attributed to the simultaneous effect of strong plasmon absorption, increased injection of hot electrons into the conduction band of GaN. This study will open up the direction to fabricate the high-performance UV photodetector.

Advantages of AlGaN Tunnel Junction in N-Polar 284 nm Ultraviolet-B Light Emitting Diode

Smart, low cost and environmentally safe aluminum gallium nitride (AlGaN)-based ultraviolet-B light-emitting diodes (UV-B LEDs) are promising in real-world applications including medical as well as agricultural sciences. Higher efficiency droops, low hole injection efficiency, and high operating voltage are the key problems that AlGaN-based UV-B LEDs are facing. In this work, a smart and clean AlGaN-based UV-B LED at 284 nm emission wavelength has been studied. Here an approach is presented to electrically operate the quantum tunnelling probability by exploiting the transported carriers at the interface of p-AlGaN/n-AlGaN/n++-AlGaN tunnel junction (TJ) with moderate Si and Mg-doping levels and optimized thickness with the help of simulation study. The simulation results show that the Augur recombination rate is successfully suppressed and quite a high radiative recombination rate is achieved in the 284 nm N-polar AlGaN-based TJ UV-B LEDs, which is attributed to the improved hole injection toward the MQWs when compared to C-LED (conventional-LED). It is found that C-LED has a maximum IQE (internal quantum efficiency) of 40% under 200 A cm−2 injection current with an efficiency drop of 15%, while the TJ-LED has a maximum IQE of 93% with an efficiency droop of 0%. In addition, TJ-based AlGaN LED emitted power has been improved by 6 times compared to the C-LED structure. The emitted powers of TJ-LED increase linearly under varying current densities, whereas in the case of C-LED, the emitted power changes nonlinearly under varying current densities. This is attributed to the lower Augur recombination rate in the MQWs of N-AlGaN-based TJ UV-B LED. The operating voltages were reduced from 5.2 V to 4.1 V under 200 mA operation, which is attributed to the thickness and doping optimization in TJ and better selection of relatively lower Al-content in the contact layer. N-polar AlGaN-based TJ is explored for UV-B LEDs and the demonstrated work opens the door to epitaxial growth of high-performance UV emitters in MOCVD and MBE for a plethora of biomedical applications.

Self-powered stable high-performance UV–Vis–NIR broadband photodetector based on PVP-Cobalt@Carbon nanofibers/n-GaAs heterojunction

The self-powered PVP-Co@C nanofibers/n-GaAs heterojunction photodetector (HJPD) was fabricated by electrospinning of the nanofibers onto GaAs. An excellent rectification ratio of 6.60 × 106 was obtained from I–V measurements of the device in the dark. The I–V measurements of the fabricated device under 365 nm, 395 nm and 850 nm lights, as well as I–V measurements in visible light depending on the light intensity, were performed. The HJPD demonstrated excellent photodetection performance in terms of a good responsivity of ∼225 mA W−1 (at −1.72 V) and at zero bias, an impressive detectivity of 6.28 × 1012 Jones, and a high on/off ratio of 8.38 × 105, all at 365 nm wavelength. In addition, the maximum external quantum efficiency and NPDR values were 3495% (V = −1.72 V) and 2.60 × 1010 W−1 (V = 0.0 V), respectively, while the minimum NEP value was ∼10−14 W.Hz−1/2 for 365 nm at V = 0.V volts. The HJPD also exhibited good long-term stability in air after 30 d without any encapsulation.

High-performance Ga2O3 solar-blind UV photodetectors via film growth regulation and surface state engineering

Gallium oxide (Ga2O3) with a wide bandgap is emerging as one of the most promising candidates for solar-blind photodetectors (SBPDs). However, the practical application of Ga2O3-based SBPDs is impeded by substantial defects-related leakage currents, sluggish response speed, and high-cost, making their practical applications face great challenges. Here, we proposed strategic films growth regulation and surface state engineering to grow high-quality yet economical β-Ga2O3 films, thereby achieving high-performance SBPDs. High-resolution transmission electron microscopy revealed the presence of high-quality films with an extremely regular arrangement of β-Ga2O3 (2‾01) planes. The full width at half maximum and root mean square roughness values are 0.07° and 0.716 nm, respectively. The β-Ga2O3 films demonstrated a significant reduction in VO concentrations after O2/N2 plasma treatment. This process can effectively minimize thermal damage to the sample surface while retaining highly reactive free radicals. The photocurrents of devices can be further enhanced, leading to a larger PDCRs of 8.6 × 107, through N2 plasma treatment. Moreover, the films effectually suppress the persistent photoconductivity effect with τr and τd values of 5.31/0.97 s and 0.49/0.87 s before and after N2 plasma treatment, respectively. We have demonstrated the influence mechanism of O2/N2 plasma treatment on photoelectronic performance. This study provides a practical approach to growing high-quality β-Ga2O3 films and preparing high-performance but low-cost Ga2O3-based SBPDs.

High-performance and low-power consumption deep UV photodetectors based on MOCVD-grown ZnGa2O4epilayers with high temperature functionality

This work reports on the fabrication of excellent quality deep ultraviolet photodetectors (DUV PDs) based on metalorganic chemical vapor deposition (MOCVD) grown spinel ZnGa2O4 thin films on c-plane sapphire. Herein, The DUV PDs by exhibiting an ultra-low dark current of 6.69 fA and a high photo-to-dark-current ratio (PDCR) of >108 at a low-power operation of 0.2 V. While PDCR reached more than 109 on applied bias of 10 V having extremely low dark current of 37 fA. The detector revealed an ultra-high responsivity of 185 and 3.53 A/W under the exposure of 107 μW/cm2 of 245 nm wavelength at room temperature (RT) and applied bias of 10 and 0.2 V, respectively, and exhibited the record-high detectivity of the order of 1017 Jones. The temperature-dependent operation remained stable across a wide temperature range, from 27 °C to 125 °C, maintaining ultra-low dark current. The nearly constant growth and decay time of DUV PDs throughout the temperature range emphasizes the robustness and reliability of PD. The ideality factor in both DUV and dark conditions nearing unity proves the dominance of the thermionic emission mechanism. Also shows the stable and slight improved performance after a year. Therefore, these findings suggest that ZnGa2O4 is a strong contender for deep UV detection that shows robustness even at high temperatures.

High-performance self-powered UV photodetectors using SnO2 thin film by reactive magnetron sputtering

Self-powered UV photodetector (UVPD) operates without the need for an external energy source and contributes to global energy conservation. With ongoing innovation, self-powered PDs are becoming increasingly appealing for industrial and innovation applications such as advanced environmental monitoring and communication devices. This study investigates the influence of varying working pressures (ranging from 3 to 15 mTorr) during reactive magnetron sputtering on the crystalline structure, surface morphology, and performance of SnO2 thin film photodetectors, aiming to fabricate self-powered UVPDs. The SnO2-based UVPD demonstrates exceptional self-powered UV photodetection capabilities, characterized by a sensitivity of 6.41×105%, responsivity of 0.09 mA/W, and detectivity of 2.99×1010 Jones. In addition, SnO2-based UVPD possesses a switching photo response and recovery time of 0.75 and 0.99 s. Henceforth, it was observed that 8 mTorr SnO2 thin film exhibits exceptional stability, superior photodetector performance, and remarkable repeatability, rendering them highly suitable for UVPD applications. Notably, these films demonstrate sustained functionality for approximately 100 days without necessitating encapsulation. These excellent results confirm that SnO2 thin films are suitable for fabricating future smart optoelectronics devices.

ZnAl-LDH film for self-powered ultraviolet photodetection

Self-powered photoelectrochemical-type (PEC) ultraviolet photodetectors (UV PDs) have been rapidly developed owing to their low-cost fabrication and good photodetection. However, achieving high-performance and self-powered PEC UV PDs based on an individual material is still challenging. Therefore, developing more wide bandgap semiconductors for high-performance PEC UV PDs is attractive. Here, we demonstrate that ZnAl-LDH is suitable for self-powered PEC UV PDs with high responsivity and excellent wavelength selectivity for the first time. The responsivity is 29.25 ​mA/W (254 ​nm irradiation) and the UV/visible rejection ratio is 1037, surpassing most PEC UV PDs. Furthermore, the PEC UV PDs have fast response, good stability, and underwater optical communication capability. This work offers more chances for the development of high-performance PEC UV PDs and demonstrates the potential application of ZnAl-LDH in underwater optoelectronic devices.

High performance near ultraviolet ray detector by cluster-wrapped surface structure in ferroelectrics

High-sensitivity detectors for near-ultraviolet rays are of great importance in civil and military fields. Recently, great efforts have been made to enhance the sensitivity, but mainly at the cost of increasing energy consumption or bulk volume. High-performance near-ultraviolet ray detector was fabricated using ZnO clusters compounded in ferroelectric Bi4.5Na0.5Ti4O15 composites, which exhibit ultrahigh sensitivity detectivity (D*), linear dynamic response (LDR) and photoconductance σ(λ) of up to 3.9 × 1011 Jones, 52.04 dB, and 3.9 × 10-10 S/m, respectively. The three-parameter criterions are over a wide wavelength range larger than that of a semiconductor. High external quantum efficiency 4.6 % is to ensure the self-powered device. Such a brilliant virtue is attributed to the artificial transport layer by the superior ZnO cluster surface-wrapped structure, which effectively transports the electrons or holes induced by photons. These pioneering findings indicate that the ZnO cluster surface-wrapped structure may be useful for the assembly of ferroelectric high-performance UV photoelectronic devices in the near future.

High-Performance Self-Powered Photoelectrochemical Ultraviolet Photodetectors Based on an In2O3 Nanocube Film.

Ultraviolet photodetectors (UV PDs) have attracted significant attention due to their wide range of applications, such as underwater communication, biological analysis, and early fire warning systems. Indium oxide (In2O3) is a candidate for developing high-performance photoelectrochemical (PEC)-type UV PDs owing to its high UV absorption and good stability. However, the self-powered photoresponse of the previously reported In2O3-based PEC UV PDs is unsatisfactory. In this work, high-performance self-powered PEC UV PDs were constructed by using an In2O3 nanocube film (NCF) as a photoanode. In2O3 NCF photoanodes were synthesized on FTO by using hydrothermal methods with a calcining process. The influence of the electrolyte concentration, bias potential, and irradiation light on the photoresponse properties was systematically studied. In2O3 NCF PEC UV PDs exhibit outstanding self-powered photoresponses to 365 nm UV light with a high responsivity of 44.43 mA/W and fast response speed (20/30 ms) under zero bias potential, these results are superior to those of previously reported In2O3-based PEC UV PDs. The improved self-powered photoresponse is attributed to the higher photogenerated carrier separation efficiency and faster charge transport of the in-situ grown In2O3 NCF. In addition, these PDs exhibit excellent multicycle stability, maintaining the photocurrent at 98.69% of the initial value after 700 optical switching cycles. Therefore, our results prove the great promise of In2O3 in self-powered PEC UV PDs.

Method Development and Validation for Estimation of Bedaquiline and in Tablet Dosage form by Hptlc and Rp-Hplc Study

A diarylquinoline anti-mycobacterial drug, bedaquiline (BDQ), treats mycobacterial infections. It inhibits the proton pump by inhibiting mycobacterial Adenosine Triphosphate (ATP) synthase. ATP enzyme that is energy production requires Mycobacterium tuberculosis. The present study aimed to develop three analytical methods, i.e., High-performance thin-layer chromatography (HPTLC), HPLC, and UV, as BDQ estimation in tablet forms. HPTLC is employed in the first method, which uses ethanol-chloroform-toluene as the mobile phase (6:3.5:0.5). UV spectroscopy at 240nm was used to analyse BDQ at 100-300 micrograms per milliliter. RP-HPLC method based on the separation using a C18 column, Buffer (sodium acetate): Methyl alcohol (70:30) as mobile phase flowing at a rate of 1ml per min. The retention time was determined to be 5.4 minutes. At 240 nm, it could quantify the concentrations of 5-25 g per ml at concentrations of 5-20 g per ml. The third method involves the "UV-VISIBLE” spectrophotometric method. A range of BDQ concentrations is determined of 8-40µg/ml, respectively. These methods were checked to ICH guidelines, and as a result, a commercially available pharmaceutical formulation, with the findings of statistical comparison, was conducted between all three methods.

Developing a high-performance UV photodetector by improving polyaniline polymer properties with multi-walled carbon nanotubes

Developing a high-performance UV photodetector by improving polyaniline polymer properties with multi-walled carbon nanotubes

High performance UV–vis–NIR photodetectors based on ZnO/organic–inorganic Sn–Pb hybrid perovskite heterojunction

High performance UV–vis–NIR photodetectors based on ZnO/organic–inorganic Sn–Pb hybrid perovskite heterojunction

Air-Stable Self-Driven UV Photodetectors on Controllable Lead-Free CsCu2I3 Microwire Arrays.

The rapid evolution of the Internet of Things has engendered increased requirements for low-cost, self-powered UV photodetectors. Herein, high-performance self-driven UV photodetectors are fabricated by designing asymmetric metal-semiconductor-metal structures on the high-quality large-area CsCu2I3 microwire arrays. The asymmetrical depletion region doubles the photocurrent and response speed compared to the symmetric structure device, leading to a high responsivity of 233 mA/W to 355 nm radiation. Notably, at 0 V bias, the asymmetric device produces an open-circuit voltage of 356 mV and drives to a short-circuit current of 372 pA; meanwhile, the switch ratio (Iph/Idark) reaches up to 103, indicating its excellent potential for detecting weak light. Furthermore, the device maintains stable responses throughout 10000 UV-light switch cycles, with negligible degradation even after 90-day storage in air. Our work establishes that CsCu2I3 is a good candidate for self-powered UV detection and thoroughly demonstrates its potential as a passive device.

Pharmacognostic, Physicochemical, Phytochemical and Chromatographic Characterization of Vaividanga Choornam, A Siddha Polyherbal Formulation

Standardization of herbal formulations as determined by the concentration of their activecomponents is essential to appraise the quality of drugs. The current study intends to investigate the phytochemical and physicochemical analyses of Vaividanga Choornam, a traditional Siddha polyherbal composition. This Vaividanga choornam contains the ingredients like Vaividangam (Embelica ribesBurm.), Milagu (Piper nigrumL.), Chukku (Zingiber officinale Rosc.), Omam (Trachyspermum ammi (L) Sprague), and Nilavaagai leaves (Cassia angustifolia Vahl. - syn. Cassia senna). It treatspitha diseases, constipation, indigestion, flatulence, burning sensation, bronchial asthma, and Kapha diseases. It is also an effective medicine for treating intestinal helminths caused by heavy worm burdens in young children. This study aims to estimate the quality of Vaividanga Choornam by performing pharmacognostic studies, preliminary phytochemical analysis, physiochemical parameters like ash value, extractive value, and loss on drying as per pharmacopoeial laboratory for Indian medicine guidelines, and also with the help of tests done with High-Performance Thin Layer Chromatography (HPTLC), FTIR Spectroscopy, and UV -Vis spectrometric analyses. The results obtained fromthose analyses showed the presence of various phytochemicals. The results indicate that the drug is of adequate quality and may be used to establish pharmacopeial standards of the medicine.

Unearthing Superior Inorganic UV Second-Order Nonlinear Optical Materials: A Mineral-Inspired Method Integrating First-Principles High-Throughput Screening and Crystal Engineering.

Natural minerals, with their adaptable framework structures exemplified by perovskite and lyonsite, have sparked substantial interest as potential templates for the design of advanced functional solid-state materials. Nonetheless, the quest for new materials with desired properties remains a substantial challenge, primarily due to the scarcity of effective and practical synthetic approaches. In this study, we have harnessed a synergistic approach that seamlessly integrates first-principles high-throughput screening and crystal engineering to reinvigorate the often-overlooked fresnoite mineral, Ba2 TiOSi2 O7 . This innovative strategy has culminated in the successful synthesis of two superior inorganic UV nonlinear optical materials, namely Rb2 TeOP2 O7 and Rb2 SbFP2 O7 . Notably, Rb2 SbFP2 O7 demonstrates a comprehensive enhancement in nonlinear optical performance, featuring a shortened UV absorption edge (260 nm) and a more robust second-harmonic generation response (5.1×KDP). Particularly striking is its significantly increased birefringence (0.15@546 nm), which is approximately 30 times higher than the prototype Ba2 TiOSi2 O7 (0.005@546 nm). Our research has not only revitalized the potential of the fresnoite mineral for the development of new high-performance UV nonlinear optical materials but has also provided a clearly defined roadmap for the efficient exploration of novel structure-driven functional materials with targeted properties.

Dual-coupling effect enables a high-performance self-powered UV photodetector.

Self-powered ultraviolet photodetectors generally operate by utilizing the built-in electric field within heterojunctions or Schottky junctions. However, the effectiveness of self-powered detection is severely limited by the weak built-in electric field. Hence, advances in modulating the built-in electric field within heterojunctions are crucial for performance breakthroughs. Here, we suggest a method to enhance the built-in electric field by taking advantage of the dual-coupling effect between heterojunction and the self-polarization field of ferroelectrics. Under zero bias, the fabricated AgNWs/TiO2/PZT/GaN device achieves a responsivity of 184.31 mA/W and a specific detectivity of 1.7 × 1013 Jones, with an on/off ratio of 8.2 × 106 and rise/decay times reaching 0.16 ms/0.98 ms, respectively. The outstanding properties are primarily attributed to the substantial self-polarization of PZT induced by the p-GaN and the subsequent enhancement of the built-in electric field of the TiO2/PZT heterojunction. Under UV illumination, the dual coupling of the enhanced heterojunction and the self-polarizing field synergistically boost the photo-generated carrier separation and transport, leading to breakthroughs in ferroelectric-based self-powered photodetectors.

Sol-Gel Synthesized Amorphous (InxGa1−x)2O3 for UV Photodetection with High Responsivity

β-Ga2O3 photodetectors have the advantages of low dark current and strong radiation resistance in UV detection. However, the limited photocurrent has restricted their applications. Herein, MSM UV photodetectors based on (InxGa1−x)2O3 (x = 0, 0.1, 0.2, 0.3) by a sol-gel method were fabricated and studied. The doping of indium ions in Ga2O3 leads to lattice distortion and promotes the formation of oxygen vacancies. The oxygen vacancies in (InxGa1−x)2O3 can be modulated by various proportions of indium, and the increased oxygen vacancies contribute to the enhancement of electron concentration. The results show that the amorphous In0.4Ga1.6O3 photodetector exhibited improved performances, including a high light-to-dark current ratio (2.8 × 103) and high responsivity (739.2 A/W). This work provides a promising semiconductor material In0.4Ga1.6O3 for high-performance MSM UV photodetectors.

Self-powered high-performance UV–vis–IR hybrid photovoltaic photodetector based on Epilobium angustifolium L. (Onagraceae)

Water-soluble Epilobium angustifolium (EA) extract was successfully coated on n-type Si single crystal by spin coating method to obtain EA/n-Si heterojunction device. UV–vis absorption and SEM analysis of the EA film were performed and the optical band gap was calculated as 2.71 eV. Electro-optical measurements of the fabricated device were performed and was found to give very good photoresponse in the UV–vis-IR regions. According to the experimental results, the EA/n-Si heterojunction showed not only high-performance photodetector properties but also self-driven properties under visible light as well as under UV and IR lights. At 150 mW/cm2 visible light, the device demonstrated excellent photovoltaic properties with Voc and Isc values of 0.40 V and 4.65 A, respectively. Under IR light, the responsivity, specific detectivity and NPDR reached 0.65 A/W and 1.41 × 1012 Jones, 4.23 × 108 W−1 respectively. Finally, a high-performance organic/inorganic photodetector in the broadband range has been successfully fabricated.