High-performance Electronic Applications Research Articles

Characterizing Key Process Strategies for Conductive Submicron Electrohydrodynamic Jet Printing

Compared to conventional electronics fabrication techniques, printed electronics have the advantages of reducing complexity and cost, while increasing material compatibility and design flexibility. Electrohydrodynamic jet (E-jet) printing is a 3D printing process with high-resolution capabilities. While significant progress has been made on printing metal nanoparticles to fabricate micron-scale electrical components, a knowledge gap exists in our understanding of the key process strategies that enable e-jet printing at the submicron-scale. This work highlights the derivation of models for performance estimation and process parameter selection to ensure consistent e-jet printing at the submicron-scale. Using this framework, we demonstrate high-resolution ptinted conductive line patterns suitable for high-performance electronics applications.

Tunable, stable, and reversible n-type doping of MoS2 via thermal treatment in N-methyl-2-pyrrolidone

Here, we report a highly stable and reversible n-type doping of monolayer MoS2 using thermal treatment in N-methyl-2-pyrrolidone (NMP). The Raman and photoluminescence spectroscopic measurements as well as the device performance of the MoS2 transistors suggested a stronger n-type doping effect with increasing time and temperature of the thermal treatment in NMP. Within the given time (5–60 min) and temperature (50 °C–110 °C), the surface treatment in NMP provided an electron concentration from 6 × 1010 to 2 × 1012 cm−2. Owing to the n-type doping effect, the thermal treatment in NMP reduced the contact resistance and enhanced the field-effect mobility of the MoS2 transistors. The n-type doping via thermal treatment in NMP remained effective for more than 12 months in ambient air, and could be completely removed after immersion in isopropanol. These results demonstrate that thermal treatment in NMP can be a facile and effective route to achieve stable and reversible doping of two-dimensional materials including MoS2 for their applications in high-performance electronics and optoelectronics.

Dynamic piezotronic effect modulated AlGaN/GaN HEMTs with HfZrOx gate dielectric

High electron mobility transistors (HEMTs) based on AlGaN/GaN heterojunctions show promising applications in high-performance power electronics. Having to face the limited device performance caused by electrically unstable issues, high-κ gate dielectric has been brought into HEMTs (forming MOS-HEMTs) to make a breakthrough. Impressively, a high-κ HfZrOx (HZO) dielectric has been proved to enable the HEMTs to exhibit enhanced performances, e.g., higher output performance, lower leakage current, and better surface properties. Additionally, by coupling piezoelectric and semiconductor properties, piezotronic effect also provides a novel approach for optimizing HEMTs with the use of external stress. Here, we present dynamic piezotronic effect of AlGaN/GaN HEMTs with HZO gate dielectric in pulse voltage modes. When the GaN layer is suffered from tensile stress, the DC and pulse output characteristics of the MOS-HEMTs show significantly decreased trends, and the gate leakage current shows a slight increase. Moreover, theoretical analysis based on Crosslight simulation and a self-consistent model shows that the applied tensile stress can effectively improve the energy band height of triangular potential well and affect the energy states of defects. This work not only provides an inspiration for the modulated device performance in dynamic piezotronic effect, but also expands the application prospect of HEMTs in a strain-controlled platform.

Carrier Stored Trench-Gate Bipolar Transistor With Stepped Split Trench-Gate Structure

In this work, a stepped split trench-gate (SSG) insulated-gate bipolar transistor (IGBT) employing enhanced carrier storage (CS) technique is proposed. The trench gate is split into two symmetrical gates in a deep trench structure (connected to the emitter). The bottom of the deep trench is embedded into the drift region to reduce the Miller capacitance and improve the breakdown voltage (BV) characteristics simultaneously. Additional arsenic ion implantation is performed during stepped trench formation enabling high doping CS layer. The simulation results show that in comparison with conventional carrier stored trench-gate bipolar transistor (CSTBT), the gate-to-collector charge ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${Q}_{{\mathrm {GC}}}$ </tex-math></inline-formula> ) and ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$E_{\text {OFF }}$ </tex-math></inline-formula> ) of the proposed device are decreased by 51.5% and 35.6%, respectively, with a constant conduction voltage drop ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{\mathrm{ON}}$ </tex-math></inline-formula> ) of 1.36 V. In addition, an optimized tradeoff between <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{\mathrm{ON}}$ </tex-math></inline-formula> and BV has been achieved. The proposed device shown here can offer an attractive technical approach with compatible manufacturing process toward high-performance power electronics applications.

Peripheral octamethyl-substituted nickel(II)-phthalocyanine-decorated carbon-nanotube electrodes for high-performance all-solid-state flexible symmetric supercapacitors

Construction of advanced electrode materials with unique performance for supercapacitors (SCs) is essential to achieving high implementation in the commercial market. Here, we report a novel peripheral octamethyl-substituted nickel(II) phthalocyanine (NiMe2Pc)-based nanocomposite as the electrode material of all-solid-state SCs. The highly redox-active NiMe2Pc/carboxylated carbon nanotube (CNT-COOH) dendritic nanocomposite provides rapid electron/electrolyte ion-transport pathways and exhibits excellent structural stability, resulting in high-capacity activity and impressive cycling stability. The composite prepared with the optimized weight ratio of NiMe2Pc:CNT-COOH (6:10) showed the highest specific capacitance of 330.5 F g−1 at 0.25 A g−1. The constructed NiMe2Pc/CNT-COOH-based all-solid-state symmetric SC device showed excellent performance with a maximum energy density of 22.8 Wh kg−1 and outstanding cycling stability (111.6% retained after 35,000 cycles). Moreover, flexible carbon cloth significantly enhanced the energy density of the NiMe2Pc/CNT-COOH all-solid-state symmetric device to 52.1 Wh kg−1 with 95.4% capacitance retention after 35,000 cycles, and it could be applied to high-performance flexible electronics applications. These findings provide a novel strategy to design phthalocyanine-based electrode materials for next-generation flexible SC devices.

Control of alignment of h-BN in polyetherimide composite by magnetic field and enhancement of its thermal conductivity

In this study, hexagonal boron nitride (h-BN) - polyetherimide (PEI) composites were prepared by a simple solution casting method, where the h-BN particles were aligned by an external magnetic field. Prior to the preparation of the composite samples, the h-BN platelets were firstly decorated by iron oxide nanoparticles (Fe 3 O 4 ) to achieve the desired magnetic properties. Due to the alignment of h-BN particles, the composite exhibited greatly enhanced thermal conductivity along that direction. At a filler loading of 20 wt%, an enhancement of 166% was obtained, compared to that of the unaligned composite. Furthermore, the composite samples showed a low dielectric loss (~ 0.01) with the filling ratio below 20 wt% and a tensile modulus of up to 2.34 GPa. Bearing such thermal conductivity, electrical insulation properties, and mechanical properties, these composites with magnetically aligned h-BN particles show potentials for microelectronic packaging applications. • h-BN were added into polyether imide (PEI) to prepare flexible composite films. • h-BN micro-platelets were aligned by an external magnetic field. • h-BN micro-platelets were firstly decorated by iron oxide nanoparticles to achieve magnetic properties. • The vertically aligned h-BN/PEI composite is promising for high-performance electronic packaging applications.

Manipulate organic crystal morphology and charge transport

Organic electronics has become one of the fastest developing fields with exciting advances in discovering novel organic semiconductors, enhancing charge carrier mobility, and exploring high-performance electronic device applications. Nevertheless, the solution-induced growth of small molecular organic semiconductors provokes predominant crystal misorientation, thermal cracks and grain boundary, which poses a tough challenge to maneuver the crystal alignment towards device fabrication. In this article, we conduct an in-depth review of external force-based, additive-based, and binary solvent-based techniques to effectively control the organic semiconductor crystallization, thin-film morphology, and crystal orientations. We first introduce the recent progress and the various challenges of flexible electronics, and discuss how these issues are correlated to charge carrier mobility variations. Next, we discuss the miscellaneous external force alignment methods based on the categories of slot-die coating, blade coating, substrate patterning, and air flow. Furthermore, we investigate the additive-based methods for controlling crystal growth and orientations, including polymeric additives, small molecular additives, and nanostructured additives. Finally, we discuss the binary solvent-based methods to control the crystal morphology and dimensionality. By correlating the charge transport characteristics with the intrinsic merits of those unique methods, this article shares a useful insight into maximizing the performance of organic semiconductors from a new perspective.

Enrichment of high-purity large-diameter semiconducting single-walled carbon nanotubes.

Semiconducting single-walled carbon nanotubes SWCNTs (s-SWCNTs) are considered one of the most promising alternatives to traditional silicon-based semiconductors. In particular, large-diameter s-SWCNTs (>1.2 nm) exhibit more advantages over small-diameter ones in high-performance electronic applications because of their higher charge carrier mobility and reduced Schottky barrier height. Great efforts have been made to enriching large-diameter s-SWCNTs from mass-produced raw CNTs that contain both metallic SWCNTs and s-SWCNTs. Among separation technologies, the effective and scalable ones are conjugated polymer wrapping (CPW), gel permeation chromatography (GC), aqueous two-phase extraction (ATPE), and density gradient ultracentrifugation (DGU). In this review, we survey recent progress on enriching large-diameter s-SWCNTs using those methods and outline the strategies and challenges in the separation according to the electronic type and chirality of SWCNTs. Finally, we highlight some applications of the enriched large-diameter s-SWCNTs and outlook for the future of SWCNT-based electronic devices.

FPGA Implementation for Rapid Prototyping of High Performance Voltage Source Inverters

Field-programmable gate array (FPGA) is a powerful platform that can play an essential role in high-performance digital control of power electronics systems. However, the FPGA system’s design is quite different from that of a traditional microprocessor or a digital signal processor (DSP). Instead of sequential programming using high-level languages, such as C/C++, FPGA controller implementation requires a hardware description language (HDL) such as Verilog and VHDL, which requires extensive verification and optimization during the design process. This paper proposes a systematic FPGA design methodology with optimum resource utilization for rapid prototyping of high-performance power electronics applications to facilitate the widespread adoption of FPGA technology in power electronics. The FPGA controller design is concurrent with the power stage and utilizes high-level synthesis (HLS) tools and Simulink code generation toolbox. This paper covers the detailed design, implementation, and experimental validation of two specific applications, i.e., an active power filter (APF) and a motor emulator (ME), demonstrating the generalized features of the methodology. Employing fundamentally different control structures, both application examples achieve ultra-high current control bandwidth leveraging SiC MOSFETs switching at no less than 100 kHz.

Criteria for Assessing the Interlayer Coupling of van der Waals Heterostructures Using Ultrafast Pump-Probe Photoluminescence Spectroscopy.

van der Waals (vdW) heterostructures of transition metal dichalcogenides (TMDCs) provide an excellent paradigm for next-generation electronic and optoelectronic applications. However, the reproducible fabrications of vdW heterostructure devices and the boosting of practical applications are severely hindered by their unstable performance, due to the lack of criteria to assess the interlayer coupling in heterostructures. Here we propose a physical model involving ultrafast electron transfer in the heterostructures and provide two criteria, η (the ratio of the transferred electrons to the total excited electrons) and ζ (the relative photoluminescence variation), to evaluate the interlayer coupling by considering the electron transfer in TMDC heterostructures and numerically simulating the corresponding rate equations. We have proved the effectiveness and robustness of two criteria by measuring the pump-probe photoluminescence intensity of monolayer WS2 in the WS2/WSe2 heterostructures. During thermal annealing of WS2/WSe2, ζ varies from negative to positive values and η changes between 0 and 4.5 × 10-3 as the coupling strength enhanced; both of them can well characterize the tuning of interlayer coupling. We also design a scheme to image the interlayer coupling by performing PL imaging at two time delays. Our scheme offers powerful criteria to assess the interlayer coupling in TMDC heterostructures, offering opportunities for the implementation of vdW heterostructures for broadband and high-performance electronic and optoelectronic applications.

Solution Epitaxy of Halide Perovskite Thin Single Crystals for Stable Transistors.

Halide perovskites hold promise for energy and optoelectronic applications due to their fascinating photophysical properties and facile processing. Among various forms, epitaxial thin single crystals (TSCs) are highly desirable due to their high crystallinity, reduced defects, and easy epitaxial integration with other materials. However, a cost-effective method for obtaining TSCs with perfect epitaxial features remains elusive. Here, we demonstrate a direct epitaxial growth of high-quality all-inorganic perovskite CsPbBr3 TSCs on various substrates through a facile solution process under near-ambient conditions. Structural characterizations reveal a high-quality epitaxy between the obtained perovskite TSCs and substrates, thus leading to efficiently reduced defects. The resultant TSCs display a low trap density (∼1011 cm-3) and a long carrier lifetime (∼10.16 ns). Top-gate/top-contact transistors based on these TSCs exhibit high on/off ratios of over 105, an optimal hole mobility of 3.9 cm2 V-1 s-1, almost hysteresis-free operation, and high stability at room temperature. Such a facile approach for the high-yield production of perovskite epitaxial TSCs will enable a broad range of high-performance electronic applications.

Single-Atom Vacancy Doping in Two-Dimensional Transition Metal Dichalcogenides

ConspectusFaced with the growing quests of higher-performance chips, developing new channel semiconductors immune to short channel effects has become a realistic option for continuing Moore’s Law. With outstanding gate electrostatic capacitance, stable chemical properties, and suitable bandgap, two-dimensional (2D) transition metal dichalcogenides (TMDCs) are considered as potential candidates for next-generation channel materials. However, the practical applications of 2D TMDCs are severely limited by stable, precise, and controllable doping technologies, due to their ultrathin body and dangling bond-free surface. Compared to three-dimensional semiconductors, donors in 2D semiconductors need larger ionization energy which can be attributed to the reduced screening of Coulomb interaction and the larger bandgap induced by quantum confinement. Limited by the ultrathin body of 2D TMDCs and the strong film–substrate charge transfer, typical silicon-based substitutional doping technology encounters some headache difficulties in 2D TMDCs and hardly achieves high-concentration doping. The other two doping technologies also cannot take on this task either; local gate electrostatic doping cannot leave the aid of the external electric field. And surface charge transfer doping of molecule adsorbents behaves unstably (e.g., thermal desorption) or ineffectively modifies the original electronic structure. Fortunately, single-atom vacancies can effectively and precisely adjust the carrier concentration of 2D TMDCs and significantly enhance their conductivity. Therefore, clarifying the work rules and function mechanism of single-atom vacancy doping in 2D TMDCs is beneficial in creating a brand-new optimization strategy of electrical properties and overcoming the technical obstacles of the “lab-to-fab” transition for their practical applications in high-performance electronics and optoelectronics.In this Account, we summarize the state-of-the-art progress in single-atom vacancy doping in 2D TMDCs and highlight the applications in optoelectronic and electronic devices. First, the common defects and the density-largest-defect type in 2D TMDCs are demonstrated through experimental characterizations. Second, the healing and manufacturing strategies of chalcogen vacancies in 2D TMDCs are systematically summarized. Third, we clarify the doping mechanism of single-atom vacancies in 2D TMDCs and its regulation of the electrical properties including carrier concentration and carrier mobility. Fourth, the correlations between chalcogen vacancies in 2D TMDCs and the optical signals from Raman and photoluminescence spectroscopies are established, which will help to quickly and nondestructively evaluate the chalcogen vacancy concentration. Fifth, the current applications of single-atom vacancy doping of 2D TMDCs materials are reviewed, including complementary metal–oxide semiconductor (CMOS) logic inverters, homojunctions, Schottky diodes, and photovoltaic devices. Finally, the potential challenges and future development trends of single-atom vacancy doping for next-generation electronic and optoelectronic devices are pointed out. Overall, this Account guides on controllable and precise doping technologies for researchers in these fields from materials, electronics, and optoelectronics to promote the practical applications of 2D TMDCs.

Optimizing Ohmic contacts to Nd-doped n-type SrSnO3

We report the results of metal contact resistance, RC, to Nd-doped n-type SrSnO3 films grown by radical-based hybrid molecular beam epitaxy. Sc, Mn, Ti, Al, and Cr contact layers were deposited onto heavily doped SrSnO3 thin films. With no annealing, Al and Cr contacts were found to be highly resistive, while Sc, Mn, and Ti were more conductive, with Mn having the lowest RC of 11 ± 3 Ω-mm, immediately after liftoff. After Al2O3 passivation at 200 °C, Sc, Mn, and Ti contacts all showed Ohmic behavior, with Ti contacts having RC = 2.4 ± 0.3 Ω-mm and a resultant sheet resistance, RS, of 1.66 ± 0.07 kΩ/◻. Specific contact resistivity, ρC, values of 0.03, 0.2, and 0.5 mΩ-cm2 were determined for Ti, Sc, and Mn, respectively. Annealing at 300 °C did not result in any significant change in RC. An additional study was performed using Ti-contacts on bi-layer films consisting of a heavily doped cap layer grown on a moderately doped active layer. It was found that the RC (ρC) of Ti metal to the bi-layer films was ∼1 (2) order(s) of magnitude lower than on single-layer controls. Temperature-dependent analysis was used to extract the barrier height and doping effect for annealed Ti contacts. This work is an important step in evaluating SrSnO3 for use in high-performance and transparent electronic applications.

A Steep-Slope MoS2/Graphene Dirac-Source Field-Effect Transistor with a Large Drive Current.

In the continuous transistor feature size scaling down, the scaling of the supply voltage is stagnant because of the subthreshold swing (SS) limit. A transistor with a new mechanism is needed to break through the thermionic limit of SS and hold the large drive current at the same time. Here, by adopting the recently proposed Dirac-source field-effect transistor (DSFET) technology, we experimentally demonstrate a MoS2/graphene (1.8 nm/0.3 nm) DSFET for the first time, and a steep SS of 37.9 mV/dec at room temperature with nearly free hysteresis is observed. Besides, by bringing in the structure of gate-all-around (GAA), the MoS2/graphene DSFET exhibits a steeper SS of 33.5 mV/dec and a 40% increased normalized drive current up to 52.7 μA·μm/μm (VDS = 1 V) with a current on/off ratio of 108, which shows potential for low-power and high-performance electronics applications.

Synthesis of 2D semiconducting single crystalline Bi2S3 for high performance electronics.

2-Dimensional (2D) semiconducting materials are attractive candidates for future electronic device applications due to the tunable bandgap, transparency, flexibility, and downscaling to the atomic level in material size and thickness. However, 2D materials have critical issues regarding van der Waals contact, interface instability and power consumption. In particular, the development of semiconducting electronics based on 2D materials is significantly hindered by a low charge-carrier mobility. In order to improve the critical shortcoming, diverse efforts have been made in synthesis and device engineering. Here, we propose a synthesis method of single crystalline 2D Bi2S3 by chemical vapor deposition for high performance electronic device applications. The ion-gel gated field effect transistor with the as-grown Bi2S3 on the SiO2 substrate exhibits a high mobility of 100.4 cm2 V-1 S-1 and an on-off current ratio of 104 under a low gate voltage below 4 V at room temperature without chemical doping and surface engineering. The superior performance is attributed to the high crystal quality of Bi2S3 that shows low sulfur vacancies and atomic ratio close to the ideal value (2 : 3) under a rich sulfur growth process using H2S gas instead of sulfur powder. The synthesis method will provide a platform to realize high performance electronics and optoelectronics based on 2D semiconductors.

Tuning charge transport in organic semiconductors with nanoparticles and hexamethyldisilazane

In this study, we showcase the use of silicon dioxide (SiO2) nanoparticles and hexamethyldisilazane (HMDS) treatment to regulate the thin film morphology and manipulate charge transport of solution-processed, small-molecular, organic semiconductors. 6,13-Bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) was blended with SiO2 nanoparticles as an exemplary organic semiconductor. A higher concentration of SiO2 nanoparticles were observed near the edge of TIPS pentacene crystals and enlarged the width of crystal edges. This greatly reduced the dendritic crystal growth pattern of TIPS pentacene and contributed to its enhanced orientation uniformity. In addition, the HMDS treatment effectively passivated the silanol groups on the hydrophilic gate dielectrics. As a result, bottom-gate, top-contact TIPS pentacene/SiO2 nanoparticle-based organic thin-film transistors boosted a performance consistency enhancement (defined by the ratio of average mobility to the standard deviation of mobility). The combinational approach to employ SiO2 nanoparticles and HMDS treatment as demonstrated in this work sheds light on important applications in high-performance organic electronics devices on flexible substrate.

Enhancing the electrical properties of inkjet-printed silver ink by electrolyte sintering, photonic sintering, and electroless plating

Conductive inkjet printing is an emerging rapid manufacturing technology in the field of smart clothing and wearable electronics. The current challenge in conductive inkjet printing includes upgrading of electrical performance of printed inks to the equivalent level to traditional conductors such as bulk silver and copper, especially for high-performance electronic applications such as flexible antennas and circuits. Post-treatments are commonly employed to enhance the electrical conduction of inkjet-printed tracks. This research discusses the effects of electrolyte sintering, photonic sintering and electroless copper plating on the DC electrical resistance and resistivity of inkjet-printed silver nanoparticles. From experimental results and measurements, it was found that all the post-treatment methods effectively improved the electrical properties of printed silver ink, but in different ways. The lowest resistance of 4.5 ? (in 0.1 mm ? 10 mm) and thickest (4.5 ?m) conductor were achieved by electroless copper plating, whereas the lowest resistivity (7.5?10-8 ??m) and thinnest (1.0 ?m) conductor were obtained by photonic sintering.

Prediction of semiconducting SiP2 monolayer with negative Possion’s ratio, ultrahigh carrier mobility and CO2 capture ability

Using particle swarm optimization (PSO) methodology for crystal structure prediction, we predicted a novel two-dimensional (2D) monolayer of silicide diphosphorus compound: SiP2, which exhibits good stability as examined via cohesive energy, mechanical criteria, molecular dynamics simulation and all positive phonon spectrum, respectively. The SiP2 monolayer is an indirect semiconductor with the band gap as 1.8484 eV (PBE) or 2.681 eV (HSE06), which makes it more advantageous for high-frequency-response optoelectronic materials. Moreover, the monolayer is a relatively hard auxetic material with negative Possion’s ratios, and also possesses a ultrahigh carrier mobility (1.069 × 105 cm2V−1s−1) which is approximately four times the maximum value in phosphorene and comparable to the value of graphene and CP monolayers. Furthermore, the effects of strains on band structures and optical properties of SiP2 monolayer have been studied, as well as CO2 molecules can be strongly chemically adsorbed on the SiP2 monolayer. A semiconductor-to-metal transition for −9.5% strain ratio case and a huge optical absorption capacity on the order of 106 cm−1 in visible region present. These theoretical findings endow SiP2 Monolayer to be a novel 2D material holding great promises for applications in high-performance electronics, optoelectronics, mechanics and CO2 capturing material.

High-resolution patterning of organic semiconductor single crystal arrays for high-integration organic field-effect transistors

The pursuit of low-cost, high-performance electronic applications with solution-processible organic semiconductors drives the development of efficient methods to pattern organic semiconductor single crystals (OSSCs). However, fluid instabilities and a complex evaporation process have limited patterning of OSSCs with high resolution. Here, we present a solvent-free patterning approach, capillary force-driven molecule flow (CFDMF), to achieve highly aligned 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) single crystal patterns with sub-micron resolution and high fidelity. The position as well as pattern shape and resolution of the C8-BTBT single crystal arrays can be predetermined through photolithography. Using this method, we have demonstrated a high-integration circuit comprising over 169 organic field-effect transistors (OFETs) with a high resolution of 310 dpi. The resultant OFETs show good field-effect properties with an average mobility of 4.44 cm2 V−1 s−1. This patterning technique constitutes a major step toward the use of the high-mobility OSSCs for integrated device applications.

2-D Bi2O2Se Nanosheets for Nonenzymatic Electrochemical Detection of H2O2

Bismuth oxyselenide (Bi2O2Se) has recently emerged as a promising 2-D material for high-performance electronic and optoelectronic applications. However, its true potential is yet to be explored for chemical sensing applications. The present investigation highlights the first demonstration of a Bi2O2Se nanosheets-based sensor for nonenzymatic electrochemical detection of hydrogen peroxide (H2O2). A solution-phase method is employed to synthesize Bi2O2Se nanosheets. Cyclic voltammetry is performed to study the quantitative detection of H2O2 with a reduction potential of –0.68 V versus Ag/AgCl in nitrogen-saturated 0.1 M PBS (pH 7.4). The Bi2O2Se nanosheets-based H2O2 sensor shows efficient detection of H2O2 in the range of 50–500 μM with a sensitivity of 100 μA mA−1 cm−2, and negligible interference was observed for most of the common interferents such as NaCl, ascorbic acid, uric acid, and dopamine. Furthermore, the applicability of this electrochemical approach for practical applications is confirmed by the observation of concentration-dependent effect of H2O2 on the reduction current in artificial sweat, making Bi2O2Se nanosheets a compelling electrocatalyst candidate for the development of new wearable glucose sensors.