High On-off Ratio Research Articles

Room-Temperature Solvent Evaporation Induced Crystallization: A General Strategy for Growth of Halide Perovskite Single Crystals by Applying the Le Chatelier's Principle.

The growth of high-quality halide perovskite single crystals is imperative to study their intrinsic physical properties and to realize high-performance optoelectronic devices. Here, a room-temperature solvent evaporation-induced crystallization (RTSEIC) method is reported based on Le Chatelier's principle, which provides a general strategy to grow halide perovskite single crystals including 3D, 2D, 1D, and 0D, and either hybrid or all-inorganic halide perovskites. Taking 2D n-BA2 PbBr4 (n-BA = butylammonium) as an example, the room-temperature crystallization kinetics is demonstrated. The centimeter-sized n-BA2 PbBr4 single crystals exhibit an extremely small full width at half maximum (FWHM) of 0.024° in (0 0 2) plane rocking curve and a small trap density of 2.74× 1010 cm-3 . The superior crystalline quality endows the n-BA2 PbBr4 single crystal ultraviolet photodetectors with recorded performance among reported n-BA2 PbBr4 ultraviolet photodetectors, demonstrating a detectivity reaching 1.8× 1013 Jones, a fast response time of 55 µs and a high on-off ratio of 104 . The low-cost, simple, general, and efficient RTSEIC method is anticipated to promote the blossoming of halide perovskites single crystals.

An electroluminescent and tunable cavity-enhanced carbon-nanotube-emitter in the telecom band

Emerging photonic information processing systems require chip-level integration of controllable nanoscale light sources at telecommunication wavelengths. Currently, substantial challenges remain in the dynamic control of the sources, the low-loss integration into a photonic environment, and in the site-selective placement at desired positions on a chip. Here, we overcome these challenges using heterogeneous integration of electroluminescent (EL), semiconducting carbon nanotubes (sCNTs) into hybrid two dimensional – three dimensional (2D-3D) photonic circuits. We demonstrate enhanced spectral line shaping of the EL sCNT emission. By back-gating the sCNT-nanoemitter we achieve full electrical dynamic control of the EL sCNT emission with high on-off ratio and strong enhancement in the telecommunication band. Using nanographene as a low-loss material to electrically contact sCNT emitters directly within a photonic crystal cavity enables highly efficient EL coupling without compromising the optical quality of the cavity. Our versatile approach paves the way for controllable integrated photonic circuits.

Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film Transistors.

Ambipolar dual-gate transistors based on low-dimensional materials, such as graphene, carbon nanotubes, black phosphorus, and certain transition metal dichalcogenides (TMDs), enable reconfigurable logic circuits with a suppressed off-state current. These circuits achieve the same logical output as complementary metal-oxide semiconductor (CMOS) with fewer transistors and offer greater flexibility in design. The primary challenge lies in the cascadability and power consumption of these logic gates with static CMOS-like connections. In this article, high-performance ambipolar dual-gate transistors based on tungsten diselenide (WSe2) are fabricated. A high on-off ratio of 108 and 106, a low off-state current of 100 to 300 fA, a negligible hysteresis, and an ideal subthreshold swing of 62 and 63 mV/dec are measured in the p- and n-type transport, respectively. We demonstrate cascadable and cascaded logic gates using ambipolar TMD transistors with minimal static power consumption, including inverters, XOR, NAND, NOR, and buffers made by cascaded inverters. A thorough study of both the control gate and the polarity gate behavior is conducted. The noise margin of the logic gates is measured and analyzed. The large noise margin enables the implementation of VT-drop circuits, a type of logic with reduced transistor number and simplified circuit design. Finally, the speed performance of the VT-drop and other circuits built by dual-gate devices is qualitatively analyzed. This work makes advancements in the field of ambipolar dual-gate TMD transistors, showing their potential for low-power, high-speed, and more flexible logic circuits.

Distinct armchair and zigzag charge transport through single polycyclic aromatics.

In aromatic systems with large π-conjugated structures, armchair and zigzag configurations can affect each material's electronic properties, determining their performance and generating certain quantum effects. Here, we explore the intrinsic effect of armchair and zigzag pathways on charge transport through single hexabenzocoronene molecules. Theoretical calculations and systematic experimental results from static carbon-based single-molecule junctions and dynamic scanning tunneling microscope break junctions show that charge carriers are preferentially transported along the hexabenzocoronene armchair pathway, and thus, the corresponding current through this pathway is approximately one order of magnitude higher than that through the zigzag pathway. In addition, the molecule with the zigzag pathway has a smaller energy gap. In combination with its lower off-state conductance, it shows a better field-effect performance because of its higher on-off ratio in electrical measurements. This study on charge transport pathways offers a useful perspective for understanding the electronic properties of π-conjugated systems and realizing high-performance molecular nanocircuits toward practical applications.

Bistable Resistive Memory Switches fabricated by Floating Thin Films of Conjugated Polymers

The layer-by-layer (LBL) fabrication of conjugated polymer (CPs) thin films while preserving their microstructural features by solution processing is highly desired for compact and flexible electronic circuits. However, it is cumbersome and challenging owing to the unavoidable damage to the underlying layers. To circumvent this issue, the unidirectional floating-film transfer method (UFTM) was utilized for the LBL fabrication of oriented CP thin films on the orthogonal liquid surfaces. Further, resistive bistable memory switches were fabricated by sandwiching a layer of metal nanostructures between the LBL-fabricated oriented CP thin films. The resistive switching phenomena were realized by utilizing the applied bias-dependent charge trapping, holding, and recombination on the available states at vacuum-deposited aluminum nanostructures. The effect of CP backbone conformation on the vertical charge transport was also analyzed via a comparative study of three thiophene-based polymers namely RR-P3HT, PBTTT, and PTB-7. It was revealed that CPs with relatively fewer hydrophobic side chains was more favorable for the facile vertical charge transport due to its preferred face-on conformation on the hydrophilic liquid substrate used in UFTM. It was demonstrated that a non-volatile bistable resistive memory switch fabricated using UFTM-processed oriented thin films of PTB-7 exhibited a remarkably high on-off ratio of 1.5 × 106 with high durability.

Biocompatible AlOOH-based memristor with biomimicking synaptic functions for artificial nociceptor applications

Electronic devices with biomimetic synaptic characteristics are one of the most critical components in health monitoring and artificial intelligence. The design of neuromorphic responsive devices, however, yet remains a ground challenge. Herein, a biocompatible and electrically responsive boehmite material (γ-AlOOH) is utilized to fabricate artificial memristors to realize mimicking biological synapsefunctions. The obtained AlOOH memristor is flexible, highly transparent, and biocompatible, exhibiting nonvolatile resistive switching behaviours with low threshold voltages, high ON-OFF ratios (>103), good switching durability (>104 cycles), and long retention time (>104 s). Specifically, the device can mimic the biosynaptic functions, such as paired-pulse facilitation (PPF), long-term potentiation/depression (LTP/LTD), amplitude-dependent plasticity (SADP), and spike time dependent plasticity (STDP), and the typical sensitization, desensitization, hyperalgesia, and allodynia behaviours of the biological nociceptors. This study reveals that the AlOOH memristor with excellent artificial synapses is resulted by the high proton mobility along with the OH bond length variation of AlOOH subjected to applied stimuli, such as voltages, pulse width, and pulse intervals. Therefore, the biocompatible AlOOH-based memristors with artificial synapse behaviour have promising potential for the applications in high-performance neuromorphic devices and future artificial intelligence.

Ultrathin AlO x layer modified ferroelectric organic field-effect transistor for artificial synaptic characteristics

The challenges associated with autonomous information processing and storage will be resolved by neuromorphic computing, which takes inspiration from neural networks in the human brain. To create suitable artificial synaptic devices for artificial intelligence, it is essential to look for approaches to improve device performance. In the present study, we suggest a method to address this problem by inserting an ultrathin AlO X layer at the side of ferroelectric film for the prepared ferroelectric organic effect transistor (Fe-OFET) to modify a ferroelectric polymer film with a low coercive field. The transistors parameters are greatly improved (large memory window exceeding 14 V, high on-off current ratio of 103, and hole mobility up to 10−2 cm2 V−1 s−1). Furthermore, the optimized high-performance Fe-OFET with 2 nm thickness of AlO X layer is found to have synaptic behaviors including postsynaptic current, short-term/long-term plasticity, spike-amplitude-dependent plasticity, spike-duration-dependent plasticity, paired-pulse facilitation, spike-rate-dependent plasticity, and spike-number-dependent plasticity. An outstanding learning accuracy of 87.5% is demonstrated by an imitated artificial neural network made up of Fe-OFET for a big image version of handwritten digits (28 × 28 pixel) from the Modified National Institute of Standards and Technology dataset. By improving synaptic transistor performance in this way, a new generation of neuromorphic computing systems is set to be developed.

Influence of indium doping on electrical performance of gallium oxide thin-film transistors

In the field of oxide semiconductor thin-film transistors (TFTs), the occurrence of charge trapping in the gate dielectric and interfaces presents significant challenges to their operational stability and reliability. In this study, we present high-performing amorphous Ga2O3 TFTs created using atomic layer deposition with varying indium doping concentrations. The channel length (Lch) and channel width (Wch) are 50 and 200 μm, respectively. As the Indium concentration increases from 0% to 60%, the charge trap density (Nit) decreases, resulting in a smaller hysteresis window. The TFTs with a doping concentration of 20% are particularly noteworthy, exhibiting high field-effect mobility (22.6 cm2 V−1 s−1), lower subthreshold swing (160 mV/dec) than amorphous Ga2O3 channel devices, a high on-off current ratio (109), an appropriate threshold voltage (−1 V), and a substantial output current (26 mA/mm at VGS = 16 V).

WORM type memory device based on ionic organotin complex using 1,5-diphenyl-3-(2-pyridyl)formazan ligand

Synthesis, structure, and write once read many (WORM) type memory behavior of an ionic organotin complex containing a 2-pyridine substituted formazan ligand is described herein. Ionic organotin complex (1) was obtained by the reaction of diphenyltin dichloride with 1,5-Diphenyl-3-(2-pyridyl)formazan ligand (L) in the presence of dilute hydrochloric acid in a 2:1 molar ratio in refluxing toluene for 24 hrs. The structure of complex 1 was confirmed using the single-crystal X-ray diffraction technique, which reveals an octahedral tetrachloridodiphenylstannate and a trigonal bipyramidal dichloridotriphenylstannate anions interacting with 1,5-Diphenyl-3-(2-pyridyl)formazan cation by the attractive force as well as hydrogen bonds between them. When applied as an active material in a metal insulator metal (MIM) type memory device, complex 1 exhibited unique write once-read many (WORM) type switching memory characteristics with a high switching on-off ratio of 104. The device interestingly also shows low switching voltage and good reading capability. This work offers a new direction for the rational design and fabrication of high-performance write-once-read-many (WORM) type memory devices based on ionic organotin complexes.

Double-Floating-Gate van der Waals Transistor for High-Precision Synaptic Operations

Two-dimensional materials and their heterostructures have thus far been identified as leading candidates for nanoelectronics owing to the near-atom thickness, superior electrostatic control, and adjustable device architecture. These characteristics are indeed advantageous for neuro-inspired computing hardware where precise programming is strongly required. However, its successful demonstration fully utilizing all of the given benefits remains to be further developed. Herein, we present van der Waals (vdW) integrated synaptic transistors with multistacked floating gates, which are reconfigured upon surface oxidation. When compared with a conventional device structure with a single floating gate, our double-floating-gate (DFG) device exhibits better nonvolatile memory performance, including a large memory window (>100 V), high on-off current ratio (∼107), relatively long retention time (>5000 s), and satisfactory cyclic endurance (>500 cycles), all of which can be attributed to its increased charge-storage capacity and spatial redistribution. This facilitates highly effective modulation of trapped charge density with a large dynamic range. Consequently, the DFG transistor exhibits an improved weight update profile in long-term potentiation/depression synaptic behavior for nearly ideal classification accuracies of up to 96.12% (MNIST) and 81.68% (Fashion-MNIST). Our work adds a powerful option to vdW-bonded device structures for highly efficient neuromorphic computing.

2D Ruddlesden-Popper Sn-Based Perovskite Weak Light Detector for Image Transmission and Reflection Imaging.

2D Ruddlesden-Popper Sn-based perovskite has excellent optoelectronic properties and weak halide ion migration characteristics, making it an ideal candidate for weak light detection, which has great potential in light communication, and medical applications. Although Sn-based perovskite photodetectors are developed, weak light detection is not demonstrated yet. Herein, a high-performance self-powered photodetector with the capability to detect ultra-weak light signals is designed based on vertical PEA2 SnI4 /Si nanowires heterojunction. Due to the low dark current and high light absorption efficiency, the devices present a remarkable responsivity of 42.4mA W-1 , a high detectivity of 8 × 1011 Jones, and an ultralow noise current of 2.47 × 10-13 A Hz-1/2 . Especially, the device exhibits a high on-off current ratio of 18.6 at light signals as low as 4.60 nW cm-2 , revealing the capacity to detect ultra-weak light. The device is applied as a signal receiver and realized image transmission in light communication system. Moreover, high-resolution reflection imaging and multispectral imaging are obtained using the device as the sensor in the imaging system. These results reveal that 2D PEA2 SnI4 -based self-powered photodetectors with low-noise current possess enormous potential in future weak light detection.

Surface Modification of a Titanium Carbide MXene Memristor to Enhance Memory Window and Low‐Power Operation

AbstractWith the demand for low‐power‐operating artificial intelligence systems, bio‐inspired memristor devices exhibit potential in terms of high‐density memory functions and the emulation of the synaptic dynamics of the human brain. The 2D material MXene attracts considerable interest for use in resistive‐switching memory and artificial synapse devices owing to its excellent physicochemical properties in memristor devices. However, few memristive and synaptic MXene devices that display increased switching performances are reported, with no significant results. Herein, the conductivity of MXene (Ti3C2Tx) is engineered via etching and oxidation to enhance the switching performance of the device. The exceptional properties of partially oxidized MXene memristors include large memory windows and low threshold biases, and the complex spike‐timing‐dependent plasticity synaptic rules are also emulated. The low threshold potential distribution, reliable retention time (104 s), and distinct resistance states with a high ON–OFF ratio (>104) are the main memory‐related features of this device. The experimentally determined switching potentials of the optimized device are also uniformly distributed, according to a statistical probability‐based approach. This investigation may promote the essential material properties for use in high‐density non‐volatile memory storage and artificial synapse systems in the field of innovative nanoelectronic devices.

Effects of gate roughness on low voltage InGaZnO thin-film transistors with ultra-thin anodized AlxOy dielectrics

Low-voltage oxide semiconductors thin-film transistors (TFTs) with ultra-thin dielectrics are gaining attention in wearable electronics. However, it is a challenge for oxide semiconductor TFTs to operate at a low-voltage while maintaining high performance. In this article, ultra-thin Al x O y films (∼3 nm) are grown on aluminum (Al) electrodes with different surface roughness by anodization. The morphology and electrical properties of the anodized Al x O y films are studied. Furthermore, InGaZnO (IGZO) TFTs with the anodized AlxOy dielectrics are fabricated. It is revealed that the rougher Al gate electrode deposition resulted in a higher interface trap density, which lead to the degradation of device performance. Through optimizing the surface roughness of the initial Al gate electrodes that are used for anodization, the IGZO TFTs can operate at 1 V and show desirable properties including a reasonable saturation mobility of 5.5 cm2 V−1s−1, a low threshold voltage of 0.37 V, a small subthreshold swing of 79 mV decade−1, and a high current on-off ratio of over 106. This work shows the potential of using anodization in the future for low-power wearable electronics.

Low-Power Dynamic Circuit Design With Steep-Switching Hybrid Phase Transition FETs (Hyper-FETs)

Dynamic logic circuits suffer from leakage current during their evaluation period causing output voltage degradation. Although the keeper transistor is added to protect the output node from leakage, it comes with a considerable area and power penalty. In this article, we propose a novel design topology of a low-power dynamic logic circuit based on steep-switching hybrid phase transition FETs (Hyper-FETs). A Hyper-FET utilizes a phase transition material that exhibits selective insulator-to-metal transition enabling it to overcome the fundamental Boltzmann’s limit. The characteristic feature of the Hyper-FET also includes a higher ON–OFF ratio than the conventional counterpart. We utilize this unique advantage to alleviate the leakage issue in the dynamic circuits. We use a compact model of the phase transition material calibrated with experimental data of a single crystal VO2. For the baseline transistor, we use the predictive technology model of 14-nm FinFET. We comprehensively analyze the effects of different material parameters to explore the scope of further performance improvement. From our analysis, we deduce a range of insulating and metallic state resistance of the phase transition material (PTM) for optimum performance. We also examine the effect of process variation by performing the Monte Carlo variation analysis. Our analysis indicates that the leakage problem of the dynamic circuits is substantially improved as the phase transition material provides an additional high resistance with the pull-down network. We also observe that our design can outperform the conventional dynamic logic circuit even under random process variation.

Regulation of the electron concentration distribution in TiO2/BaTiO3 photodetector

TiO2 film ultraviolet photodetectors (UVPDs) always suffered from high dark current and low on-off ratio, which have been studied by many works. To improve the performance of the UVPDs based on TiO2, we fabricated a UVPD based on TiO2 with self-polarized BaTiO3 (SPBTO) through a spin-coating method. Compared with the dark current (1.12 nA) and on-off ratio (1.15 × 103) of the single TiO2 film UVPD, that of TiO2-SPBTO film UVPD are 1.27 × 10−1 nA and 1.17 × 104, respectively. The result shows that TiO2-SPBTO has better photoelectric detection capabilities, which may be due to the modulating the electronic distribution of TiO2 films by SPBTO film. To explore the mechanism of the device, we analyzed the carrier distribution within the heterojunction by finite element analysis, which demonstrated that the SPBTO film modulates the electron concentration distribution of TiO2 film, resulting in a lower dark current and a higher on-off ratio. This work provides a potential candidate for high-performance UVPDs.

An ultrafast and self-powered MoSxSe2-x/Si photodetector with high light-trapping structures and a SiOx interface layer.

MoSxSe2-x nanofilms, as a typical metal dichalcogenide, have attracted great interest, due to their adjustable bandgap and distinctive electronic and optical properties. However, the inherent bandgap of MoSxSe2-x and the strong interface recombination impede the actualization of a high-sensitivity photodetector (PD). Few-layer MoSxSe2-x nanofilms were prepared with vertically orientation at 450 °C, which would be a less restrictive choice of substrates. Herein, a self-powered MoSxSe2-x/SiOx/Si photodetector was fabricated which exhibits unprecedented performance with excellent reproducibility and stability from 405 nm to 980 nm, a high responsivity (0.450 A W-1), normalized detectivity (4.968 × 1012 Jones) and ultrafast photoresponse (τr = 1.20 μs, τf = 4.92 μs) at zero bias under 980 nm incident laser illumination with a density of 200 μW cm-2. Significantly, the self-powered PD is capable of detecting ultraweak IR signals below 200 μW cm-2 with high on-off ratios. More importantly, an oxidized atomic layer is generated through the wet oxidation in the Piranha solution. The PD can work well at high frequencies even at 100 kHz, which shows its potential application in high-frequency photoelectric devices and health monitors. Summing up, this work not only suggests that an ultrathin SiOx interface layer can reduce carrier recombination via simple interface engineering, but also proposes a novel strategy for the preparation of high-performance and low-cost optoelectronic devices.

Full-duplex visible light communication system based on single blue mini-LED acting as transmitter and photodetector simultaneously

GaN-based light emitting diodes (LEDs) have potential as photodetectors (PDs) for visible light communication (VLC). In current studies on LED-based PDs, devices are operated in a reverse-biased or zero-biased state. In this work, the performance of an 80 × 120 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> blue mini-LED as both a PD and light source was studied. An aluminum oxide passivation was deposited on the sidewalls of the active region using atomic-layer deposition. In addition to improving the external quantum efficiency of mini-LEDs and reducing leakage current, sidewall passivation can also increase the responsivity of mini-LED PD. At the injection current used for display, the mini-LED device still worked as a PD with a good response to illumination. At a bias of 3 V (corresponding to injection current of 11.5 mA), the mini-LED PD had a response of 0.243 A/W and a high on-off ratio of 1.33 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> . A cascaded bridged-T amplitude equalizer was used to extend the OE −3 dB bandwidth of mini-LED PD from 16 MHz to 116 MHz at 3V bias. Based on the system above, a VLC link over 1 m with a data rate of 528 Mbps is achieved using 16-ary quadrature amplitude modulation orthogonal frequency division multiplexing. Moreover, the mini-LED PD could simultaneously act as an uplink detector and a downlink transmitter in the same full-duplex VLC system. With transmission distance of 1m/ 1m, a transmission rate of 350 Mbps in the uplink and downlink was achieved. With transmission distance increasing to 1.2 m/1.2 m and 1.5 m/1.5 m, full-duplex VLC systems are also capable of achieving transmission rates of 300 Mbps and 225 Mbps, respectively. The proposed method allows the same mini-LED to be used simultaneously as a display and VLC transmitter and receiver, which not only simplifies the structure of the full-duplex communication system and reduces system power consumption, but also facilitates the integration of multifunctional small LED devices.

Charge trapped CdS quantum dot embedded polymer matrix for a high speed and low power memristor.

The data storage requirement in the digital world is increasing day by day with the advancement of the internet of things. In this respect, nonvolatile resistive random-access memory is an option that provides high density and low power data storage capabilities. In this work, zero-dimensional colloidal CdS quantum dots and a polymer composite at an appropriate ratio were used to fabricate a memristive device. Comparison with a pristine CdS quantum dot-based device reveals that a surrounding matrix around the quantum dots is needed for observing memristive behavior. The quantum dots embedded in the polymer matrix device showed extremely stable electrical switching behavior that can be operated for more than 300 cycles and 60 000 seconds. Moreover, the device needs extremely low power to operate at a very high speed. The smooth surface morphology dictates a charge trapping mechanism for the switching phenomenon; however, an interplay between different charge transport mechanisms leads to the fast switching and high on-off ratio of the device.

Resistive Switching and Synaptic Behavior of Perovskite Lanthanum Orthoferrite Thin Film for Neuromorphic Computing

A resistance random access memory (RRAM), based on a metal oxide thin film with resistive switching behavior, has been explored as an emerging candidate for their application as nonvolatile memories, due to their various advantages, such as simple device configuration, long data retention, high switching speed, and low operating voltage. Various metal oxides have been explored for resistive switching applications including, e.g., binary and ternary compounds. Among all metal oxides, the perovskites have attracted considerable interest due to their potential to be used for information storage and neuromorphic application. In this work, we demonstrate stable bipolar resistive switching devices based on the sputtered LaFeO3 thin film on fluorine doped tin oxide (FTO)-coated glass with circular-shaped silver contacts. The memory performance of fabricated devices was characterized as a function of the thickness of the LFO thin layer. The resistive switching properties are investigated using macroscopic <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}$ </tex-math></inline-formula> – <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> measurements, showing low-voltage switching with a high ON–OFF ratio ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\approx 300$ </tex-math></inline-formula> ) and long retention (≥9000 s). The fabricated devices demonstrate the stable, low voltage and high-speed switching. Furthermore, in this work, we demonstrate the synaptic behavior of the LFO thin-film memory devices, as it exhibits analog memory characteristics, potentiation, and depression.

Enhanced Response Speed in 2D Perovskite Oxides-Based Photodetectors for UV Imaging through Surface/Interface Carrier-Transport Modulation.

The long-time decay process induced by the persistent photoconductivity (PPC) in metal oxides-based photodetectors (PDs) impedes our demands for high-speed photodetectors. 2D perovskite oxides, emerging candidates for future high-performance PDs, also suffer from the PPC effect. Here, by integrating 2D perovskite Sr2Nb3O10 (SNO) nanosheets and nitrogen-doped graphene quantum dots (NGQDs), a unique nanoscale heterojunction is designed to modulate surface/interface carrier transport for enhanced response speed. Notably, the decay time is reduced from hundreds of seconds to a few seconds. The 4%NGQDs-SNO PD exhibits excellent performance with a photocurrent of 0.47 μA, a high on-off ratio of 2.2 × 104, and a fast pulse response speed (τdecay = 67.3 ms), making it promising for UV imaging. The trap-involved decay process plays a dominant role in determining the decay time, resulting in the PPC effect in SNO PD, and the trap states mainly originate from oxygen vacancies and chemisorbed oxygen molecules. A significantly enhanced photoresponse speed in NGQDs-SNO PDs can be ascribed to the modulated surface/interface trap states and the efficient carrier pathway provided by the nanoscale heterojunction. This work provides an effective way to enhance the response speed in 2D perovskite oxides constrained by PPC via surface/interface engineering, promoting their applications in optoelectronics.