Enhanced Response Speed in 2D Perovskite Oxides-Based Photodetectors for UV Imaging through Surface/Interface Carrier-Transport Modulation.

Abstract

The long-time decay process induced by the persistent photoconductivity (PPC) in metal oxides-based photodetectors (PDs) impedes our demands for high-speed photodetectors. 2D perovskite oxides, emerging candidates for future high-performance PDs, also suffer from the PPC effect. Here, by integrating 2D perovskite Sr2Nb3O10 (SNO) nanosheets and nitrogen-doped graphene quantum dots (NGQDs), a unique nanoscale heterojunction is designed to modulate surface/interface carrier transport for enhanced response speed. Notably, the decay time is reduced from hundreds of seconds to a few seconds. The 4%NGQDs-SNO PD exhibits excellent performance with a photocurrent of 0.47 μA, a high on-off ratio of 2.2 × 104, and a fast pulse response speed (τdecay = 67.3 ms), making it promising for UV imaging. The trap-involved decay process plays a dominant role in determining the decay time, resulting in the PPC effect in SNO PD, and the trap states mainly originate from oxygen vacancies and chemisorbed oxygen molecules. A significantly enhanced photoresponse speed in NGQDs-SNO PDs can be ascribed to the modulated surface/interface trap states and the efficient carrier pathway provided by the nanoscale heterojunction. This work provides an effective way to enhance the response speed in 2D perovskite oxides constrained by PPC via surface/interface engineering, promoting their applications in optoelectronics.