High Internal Quantum Efficiency Research Articles

Unlocking Cr3+-Cr3+ Coupling in Spinel: Ultrabroadband Near-Infrared Emission beyond 900 nm with High Efficiency and Thermal Stability.

Broadband near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) hold promising potential as next-generation compact, portable, and intelligent NIR light sources. Nonetheless, the lack of high-performance broadband NIR phosphors with an emission peak beyond 900 nm has severely hindered the development and widespread application of NIR pc-LEDs. This study presents a strategy for precise control of energy-state coupling in spinel solid solutions composed of MgxZn1-xGa2O4 to tune the NIR emissions of Cr3+ activators. By combining crystal field engineering and heavy doping, the Cr3+-Cr3+ ion pair emission from the 4T2 state is unlocked, giving rise to unusual broadband NIR emission spanning 650 and 1400 nm with an emission maximum of 913 nm and a full width at half-maximum (fwhm) of 213 nm. Under an optimal Mg/Zn ratio of 4:1, the sample achieves record-breaking performance, including high internal and external quantum efficiency (IQE = 83.9% and EQE = 35.7%) and excellent thermal stability (I423K/I298K = 75.8%). Encapsulating the as-obtained phosphors into prototype pc-LEDs yields an overwhelming NIR output power of 124.2 mW at a driving current of 840 mA and a photoelectric conversion efficiency (PCE) of 10.5% at 30 mA, rendering high performance in NIR imaging applications.

Cr3+‐doped far‐red phosphors with zero thermal quenching and excellent spectral matching for plant lighting application

AbstractFar‐red‐emitting (700−740 nm) phosphors are essential for the fabrication of plant lighting phosphor‐converted light‐emitting diodes (pc‐LEDs). However, the development of highly efficient, thermally stable, and spectrally matched far‐red phosphors still remains a challenge. Herein, far‐red GdAlO3:Cr3+ (GAO:Cr3+) phosphors were synthesized via solid‐state reaction and investigated for plant lighting pc‐LED applications. A low‐temperature flux‐assisted synthesis strategy was adopted to improve the crystalline quality, suppress the defect formation, and maintain the valence state of Cr3+ in the phosphors, finally leading to significant luminescent enhancement (∼10 times). The GAO:Cr3+ phosphors show the 2E sharp‐line emissions around 730 nm, which is highly matched with the far‐red absorption band of plants. The optimized GAO:0.01Cr3+ phosphor exhibits a high internal quantum efficiency of 98.3% and zero thermal quenching even up to 250°C. The fabricated pc‐LED can generate an overall output power of 78.1 mW at 100 mA drive current, with a high energy conversion efficiency of 25.3%. The findings demonstrate the great potential of GAO:Cr3+ as far‐red‐emitting phosphor materials for plant growth pc‐LED applications.

Well Number Dependence of Internal Quantum Efficiency in AlGaN Quantum Wells on Low‐Dislocation Sputtered AlN Templates

The internal quantum efficiency (IQE) and cathodoluminescence intensity line profile of AlGaN multiple quantum well (MQW) structures on low‐dislocation face‐to‐face annealed sputtered AlN (FFA Sp‐AlN) and on conventional metalorganic vapor‐phase epitaxy‐grown AlN (MOVPE‐AlN) templates are evaluated and the effect of the number of quantum wells (QWs) on the IQE is discussed. The higher IQE in the FFA samples is probably due to the lower threading dislocation (TD) density; however, the IQE also increases with the number of QWs although the TD density remains constant. Effective diffusion length increases with the number of QWs, indicating that the AlGaN MQW layer helps to suppress point defect diffusion, resulting in IQE increase. Furthermore, the segregation of point defects into the TDs and point defect diffusion via the TDs may explain the difference in the IQE improvement rate between the MQWs on the FFA Sp‐AlN and MOVPE‐AlN templates.

Effect of Extended Defects on AlGaN Quantum Dots for Electron-Pumped Ultraviolet Emitters.

We study the origin of bimodal emission in AlGaN/AlN QD superlattices displaying a high internal quantum efficiency (around 50%) in the 230-300 nm spectral range. The secondary emission at longer wavelengths is linked to the presence of cone-like domains with deformed QD layers, which originate at the first AlN buffer/superlattice interface and propagate vertically. The cones originate at a 30°-faceted shallow pit in the AlN, which appears to be associated with a threading dislocation that produces strong shear strain. The cone-like structures present Ga enrichment at the boundaring facets and larger QDs within the conic domain. The bimodality of the luminescence is attributed to the differing dot size and composition within the cones and at the faceted boundaries, which is confirmed by the correlation of microscopy results and Schrödinger-Poisson calculations.

An ultra-intense zero phonon line of Mn4+with the low 2E level energy in Rb2LiAlF6

Herein, Rb2LiMF6:Mn4+ (M= Al, In) phosphors were prepared by the non-equivalent doping of Mn4+. Mn4+ in Rb2LiAlF6 exhibits an ultra-intense zero phonon line (ZPL) detected at 627 nm, due to the highly-distorted symmetry. In contrast, the ZPL at 625 nm for Rb2LiInF6:Mn4+ is very weak. The 2E energy of Mn4+in Rb2LiAlF6 (15,949 cm−1) is lower than that in all reported fluoride phosphors, which may be ascribed to the stronger polarization effect of Li+. Compared with Rb2LiInF6:Mn4+ (5.07 %), Rb2LiAlF6:Mn4+ (6.33 %) has a high internal quantum efficiency (IQE) values of 69.8 % and excellent thermal stability. The white LED packaged with Rb2LiAlF6:Mn4+ (6.33 %) exhibits perfect performances with a high color render index (CRI = 92.3) and low color temperature (CCT =3875 K) as well as a high luminous efficiency (LE = 97.1 lm/W). Therefore, this work provides a promising red-emitting phosphor for high-quality white LEDs.

Efficient broadband NIR garnet phosphor Ca2LuScGa2Si2O12:Cr3+,Yb3+ for NIR pc-LED applications

Near-infrared phosphor-converted light emitting diodes (NIR pc-LEDs) have broad application prospects in the fields of solar cells, spectroscopic analysis, fluorescent labeling and biomedical testing. The current research faces challenges in enhancing the thermal stability and efficiency of near-infrared (NIR) emitting phosphors. Herein, a broadband NIR phosphor Ca2LuScGa2Si2O12:Cr3+ (CLSGS:Cr3+) was successfully synthesized. CLSGS:Cr3+ phosphor displays a broadband emission in the range (650–900 nm) with a full width at half maximum (FWHM) of 150 nm, a good luminescent thermal stability (I373K/I298K = 73%), and a high internal quantum efficiency (IQE = 70.3%). Moreover, the introducing Yb3+ into CLSGS:Cr3+ significantly improves thermal stability (I373K/I298K = 93%) and enhances internal quantum efficiency (IQE = 90.5%). By combining CLSGS:Cr3+,Yb3+ with a 460 nm commercial LED chip, the fabricated NIR pc-LED devices demonstrates potential applicability in night vision and bio-imaging.

Ce3+-Activated SrLu2Al3ScSiO12 Cyan-Green-Emitting Garnet-Structured Inorganic Phosphor Materials toward Application in Blue-Chip-Based Phosphor-Converted Solid-State White Lighting.

Phosphor-converted white-light-emitting diodes (WLEDs) with superhigh color rendering index (CRI) are the ongoing pursuit of next-generation solid-state lighting. One of the most important challenges is the limited improvement in CRI on account of the absence of a cyan component in the typical commercial combination. Here, a bright broad-band cyan-green-emitting phosphor with cubic garnet structure, SrLu2Al3ScSiO12:Ce3+ (SLASSO:Ce3+), was successfully reported, which can compensate for the absence of cyan cavity in the 480-520 nm blue-green emission region. With 439 nm blue-light irradiation, the as-fabricated SLASSO:Ce3+ phosphor yields a broad-band cyan-green emission with the maximum emission peak positioned at 525 nm and an appropriate full width at half-maximum (fwhm) of 111 nm, capable of providing more cyan emission component without sacrificing green emission. Meanwhile, the optimal SLASSO:2%Ce3+ phosphor features CIE color coordinates of (0.3254, 0.5470) with cyan-green hue, along with a high internal quantum efficiency of up to 93%. Additionally, thermal stability measurements at different temperatures reveal that the luminescence emission intensity of the proposed phosphor retains 44% of its original integral emission intensity at 423 K with respect to room temperature, while also demonstrating an excellent color stability (ΔE = 5.4 × 10-3). This work shows that the highly efficient SLASSO:Ce3+ garnet phosphor can be utilized as a potential cyan-green-emitting phosphor for filling the cyan gap, resulting in the construction of a high-quality warm WLED with high CRI for "human-centric" sunlight-like full-spectrum solid-state illumination.

Watt-level continuous-wave antimonide laser diodes with high carrier-confined active region above 2.5 µm

Thanks to high performance above room temperature, antimonide laser diodes have shown great potential for broad application in the mid-infrared spectral region. However, the laser`s performance noticeably deteriorates due to the reduction of carrier confinement with increased emission wavelength. In this paper, a novel active region with higher carrier confinements both of electron and hole, by the usage of an indirect bandgap material of Al0.5GaAs0.04Sb as the quantum barrier, was put up to address the poor carrier confinement of GaSb-based type-I multi-quantum-well (MQW) diode lasers emission wavelength above 2.5 µm. The carrier confinement and the differential gain in the designed active region are enhanced as a result of the first proposed usage of an indirect-gap semiconductor as the quantum barrier with larger band offsets in conduction and valence bands, leading to high internal quantum efficiency and low threshold current density of our lasers. More importantly, the watt-level output optical power is obtained at a low injection current compared to the state of the art. Our work demonstrates a direct and cost-effective solution to address the poor carrier confinement of the GaSb-based MQW lasers, thereby achieving high-power mid-infrared lasers.

Zero-thermal-quenching broadband yellow-emitting Bi3+-activated phosphors based on metal to metal charge transfer

Bi3+-activated phosphors have been proven to have potential applications foreground in white light-emitting diodes (WLED), plant growth lamps and temperature sensing. Therefore, it is urgent to exploit high-efficiency Bi3+-activated phosphors. Herein, a novel broadband yellow-emitting phosphor Ba2GdGaO5:Bi3+ with high internal quantum efficiency (IQE = 77%) was obtained based on metal to metal charge transfer (MMCT) between Bi3+ ground state and Gd3+ excited states. The photoluminescence excitation (PLE) spectrum and photoluminescence (PL) spectrum range from 225 nm to 400 nm and 400 nm to 700 nm, respectively, which can avoid the reabsorption phenomenon efficiently. Besides, Ba2GdGaO5:Bi3+ has superior thermal stability and it shows zero-thermal-quenching at 150 °C. The K+ doping hardly changes the thermal stability and can improve the PL intensity to 133.1% when the K+ concentration is 2%. Finally, a phosphor-convert WLED (pc-WLED) was simply synthesized by Ba2GdGaO5:Bi3+ and BaMgAl10O17:Eu2+ (BAM:Eu2+) phosphors. The doping of Eu3+ can significantly enhance the color rendering index (CRI, from 88.1 to 91.5) and reduce the correlated color temperature (CCT, from 4911 K to 4014 K). The above experimental results demonstrated that the phosphor has great application prospect in WLED.

Achieving broadband near-infrared luminescence in Cr3+-Activated Y2Mg2Al2Si2O12 phosphors via multi-site occupancy

Cr3+-activated near-infrared (NIR) phosphors are key for NIR phosphor-converted light emitting diodes (NIR pc-LED). While, the site occupancy of Cr3+ is one of the debates that have plagued researchers. Herein, Y2Mg2Al2Si2O12 (YMAS) with multiple cationic sites is chosen as host of Cr3+ to synthesize YMAS: xCr3+ phosphors. In YMAS, Cr3+ ions occupy simultaneously Al/SiO4 tetrahedral, Mg/AlO6 octahedral, and Y/MgO8 dodecahedral sites which form three luminescent centers named as Cr1, Cr2, and Cr3, respectively. Cr1 and Cr2 relate to an intermediate crystal field, with transitions of 2E→4A2 and 4T2→4A2 occurring simultaneously. As Cr3+ concentration increases, the 4T2→4A2 transition becomes more pronounced in Cr1 and Cr2, resulting in a red-shift and broadband emission. Cr3 consistently behaves a weak crystal field and exhibits the broad and long-wavelength emission. Wide-range NIR emission centering at 745 ​nm is realized in YMAS: 0.03Cr3+ phosphor. This phosphor has high internal quantum efficiency (IQE ​= ​86%) and satisfying luminescence thermal stability (I423 K ​= ​70.2%). Using this phosphor, NIR pc-LEDs with 56.6 ​mW@320 ​mA optical output power is packaged and applied. Present study not only demonstrates the Cr3+ multi-site occupancy in a certain oxide but also provides a reliable approach via choosing a host with diverse cationic sites and local environments for Cr3+ to achieve broadband NIR phosphors.

Selective site occupancy engineering enabling Mn5+ activated highly efficient near infrared-II emission in Ba3BPO7:Mn5+

The development of highly efficient near infrared (NIR) luminescence materials is crucial for advancing the next generation compact light sources. However, the realization of target material with emission in the NIR-II spectral region (1000–1700 nm) remains a major challenge. Herein, a NIR-II emission phosphor Ba3BPO7:Mn5+ peaking at 1176 nm with a full width of half maximum of 22 nm is demonstrated via a selective site occupancy engineering strategy. Upon 660 nm red-light excitation, high internal quantum efficiency of 50.6% and external quantum efficiency of 30.5% are obtained in this phosphor. Density functional theory calculations and structural analyses provide an understanding of stabilizing pentavalent manganese in Ba3BPO7:Mn5+. The highly efficient NIR-II emission is mainly ascribed to the relatively high distorted tetrahedral crystal field environment of Mn5+ in this system and the stable valence state. Combining this phosphor with 660 nm red-light chip, we fabricate a light emitting diode with NIR-II output power of 19.2 mW@300 mA, which shows promising applications in anti-counterfeiting, special information identification, etc. This work provides some important insights into the design of highly efficient Mn5+ based NIR-II emission and the emerging applications.

Increasing the hole energy by the p-type dual polarization for high internal quantum efficiency of 237 nm-band deep ultraviolet light-emitting diodes

Increasing the hole energy by the p-type dual polarization for high internal quantum efficiency of 237 nm-band deep ultraviolet light-emitting diodes

Reduced Surface Recombination in Extended-Perimeter LEDs toward Electroluminescent Cooling.

III-V semiconductor light-emitting diodes (LEDs) are a promising candidate for demonstrating electroluminescent cooling. However, exceptionally high internal quantum efficiency designs are paramount to achieving this goal. A significant loss mechanism preventing unity internal quantum efficiency in GaAs-based devices is nonradiative surface recombination at the perimeter sidewall. To address this issue, an unconventional LED design is presented, in which the distance from the central current injection area to the device's perimeter is extended while maintaining a constant front contact grid size. This approach effectively moves the perimeter beyond the lateral spread of current at an operating current density of 101-102 A/cm2. In p-i-n GaAs/InGaP double heterojunction LEDs fabricated with varying sizes and perimeter extensions, a 19% relative increase in external quantum efficiency is achieved by extending the perimeter-to-contact distance from 25 to 250 μm for a front contact grid size of 450 × 450 μm2. Utilizing an in-house developed Photon Dynamics model, the corresponding relative increase in internal quantum efficiency is estimated to be 5%. These results are ascribed to a significant reduction in perimeter recombination due to a lower perimeter-to-surface area (P/A) ratio. However, in contrast to lowering the P/A ratio by increasing the front contact grid size of LEDs, the present method enables these improvements without affecting the required maximum current density in the microscopic active LED area under the front contact grid. These findings aid in the advancement of electroluminescent cooling in LEDs and could prove useful in other dedicated semiconductor devices where perimeter recombination is limiting.

A 3D simulation model to study all-inorganic CsPbX3 (X = Br and I) perovskites-based light-emitting diodes with different hole-transporting layers

The development of numerical models is essential for optimizing perovskite light-emitting diodes (PeLEDs) and explaining their physical mechanism for further efficiency improvement. This study reports, for the first time, on a detailed device modelling of an all-inorganic perovskite LED consisting of CsPbX3 (X = Br and I) as light emitting layer (LEL) with different hole transporting layers (HTLs), employing COMSOL Multiphysics simulation package. Therefore, a 3D simulation model is served to investigate the appropriate HTLs that meet the design requirements of a PeLED in terms of band off-set engineering. For this purpose, a series of all-inorganic halide perovskites with different HTLs such as PEDOT: PSS, CuSCN and MoO3 are simulated under the same theoretical settings, and the performances of LEDs are compared with each other. This is done through studying their electronic properties using current density–voltage (J-V) curves and internal quantum efficiency (IQE) measurements. The results obtained from the J-V curves reveal that all the CsPbBr3-based samples with different HTLs exhibit the same turn-on voltage (V on) of approximately 4.2 V, while this value increases to 5.8 V for the CsPbI3-based samples. Compared with the PeLEDs based on CsPbI3, the PeLEDs based on CsPbBr3 indicate lower V on due to the formation of shorter charge carrier injection barriers at their interfaces. Furthermore, among the various simulated structures, the highest IQE is obtained for perovskite CsPbI3-based LED with MoO3 HTL (5.21%). The effect of different parameters on the performance of the proposed configurations are also investigated, and it turns out that the thickness of LELs and lifetime of charge carriers have a decisive role to play in the efficiency of PeLEDs. This theoretical study not only successfully explains the working principle of PeLEDs but also clearly shows researchers how to produce high-performance LEDs in the laboratory by knowing the physical properties of materials and accurately adjusting energy band alignments.

Organic cations promote exciton dissociation in Ruddlesden-Popper lead iodide perovskites: a theoretical study.

Two-dimensional (2D) Ruddlesden-Popper perovskites (RPPs) are a class of quantum well (QW) materials showing large exciton binding energy owing to quantum confinement. The existence of localized edge states was proposed to accelerate exciton dissociation into long-lived charge carriers in 2D RPPs, but recent experimental reports suggested that highly efficient internal exciton dissociation is achievable in 2D RPPs despite the absence of edge states. Herein, we adopt first-principles calculations to unveil the physical origin of the high internal quantum efficiency in the bulk region of widely familiar (BA)2(MA)n-1PbnI3n+1 (BA = butylammonium; MA = methylammonium) materials. We discover that the dipolar nature of MA cations provides the driving force for the separation of photoexcited electron-hole pairs inside QWs as the inorganic layer thickens from n = 1 to n = 3. Concurrently, electronic coupling between organic spacer layers and QWs is enhanced in the energetically favorable configurations where MA cations orient with their CH3 groups towards the exterior PbI2 layers of QWs in the n = 3 structure. Consequently, hole delocalization is promoted along the out-of-plane direction of QWs, which in turn facilitates exciton dissociation into free charge carriers despite large exciton binding energy. Our simulations reveal that the hydrogen bonding between organic species (including both MA and BA cations) and iodine atoms, which is subtly interconnected, engineers the response of morphology in QWs and electronic interactions at organic-inorganic interfaces, providing novel insights for the exciton-free carrier behavior in the bulk area of 2D RPPs.

Hydrothermal synthesis of ZnGa2O4 nanophosphors with high internal quantum efficiency for near-infrared pc-LEDs.

NIR luminescent materials have garnered widespread attention because of their exceptional properties, with high tissue penetration, low absorption and high signal-to-noise ratio in the field of optical imaging. However, producing nanophosphors with high quantum yields of emitting infrared light with wavelengths above 1000 nm remains a significant challenge. Here, we prepared a nanoscale ZnGa2O4:xCr3+,yNi2+ phosphor with good luminescence performance in near-infrared emission, which was synthesized via a hydrothermal method and subsequent calcination process. By co-doping with Cr3+ and Ni2+, the ZnGa2O4 phosphor shows a strong broadband emission of 1100-1600 nm in the second near-infrared (NIR-II) region, owing to the energy transfer from Cr3+ to Ni2+ with an efficiency up to 90%. Meanwhile, a near-infrared phosphor-conversion LED (NIR pc-LED) device is fabricated based on the ZnGa2O4:0.8%Cr3+,0.4%Ni2+ nanophosphor, which has under 100 mA input current, an output power of 23.99 mW, and a photoelectric conversion efficiency of 7.53%, and can be effectively applied in imaging and non-destructive testing. Additionally, the intensity ratio of INi/ICr of ZnGa2O4:0.8% Cr3+,0.4%Ni2+ with its high sensitivity value of 4.21% K-1 at 453 K under 410 nm excitation, indicates its potential for thermometry application.

(Invited) Growth of Hexagonal Boron Nitride by MOCVD for Electronic and Photonic Applications

Hexagonal boron nitride (h-BN) is a 2-dimensional (2D) layered insulating material. Thanks to its wide bandgap of ~6 eV and high thermal conductivity, h-BN has been widely utilized as an ideal substrate, gate dielectric material, passivation layer, and atomic tunnelling layer for 2D electronic devices. Recently, it has gained more attention as active material for photonics applications due to its potential for stable quantum emitters in the visible spectral range, as well as deep-ultraviolet emitters and detectors due to its exceptionally high internal quantum efficiency despite its indirect bandgap. However, mechanically exfoliated bulk h-BN and h-BN films grown on catalytic metal substrates by conventional chemical vapor deposition (CVD) systems have been mainly used to study the fundamental properties, lacking in scalability for practical implementation of h-BN.Here, we exploit the scalable approach to grow h-BN on various substrates such as sapphire, Si, and GaN, by using metal-organic chemical vapor deposition (MOCVD). A few-layer h-BN films were successfully grown on those substrates. In particular, we successfully accomplished the conformal growth of few-layer h-BN over an array of Si-based nanotrenches with 45 nm pitch and the aspect ratio of ~ 7:1. Moreover, it was found that at a specific MOCVD growth condition, a very unique h-BN film can be grown on GaN substrates, in which few-layer h-BN film is suspended on GaN nanoneedles. The combination of state-of-the-art microscopic and spectroscopic analyses revealed that the suspended h-BN films exhibit unprecedented deep ultraviolet photoluminescence spectra with local variation in band-edge emission. In addition, the h-BN films show unprecedented atomic stacking configuration, the mechanism of which will be discussed with optical and structural characterizations and theoretical calculations.

Engineering deep-red Al20B4O36:Cr3+ phosphors for photomorphogenesis

Cr3+ doped phosphors with deep-red luminescence hold great promise as artificial lighting sources for plants growth. Among them, α-Al2O3:Cr3+ is featured with an ultra-intense pure zero phonon line (ZPL) emission with negligible sidebands. Nonetheless, further enhancements in its luminescence thermal stability are required to fully unlock its potential for practical applications. To tackle this challenge, we propose that Al20B4O36 with a negative expansion coefficient could serve as a more favorable host materials for Cr3+ ion, thereby enhancing the luminescence thermal stability. Our first-principles calculations have unveiled similar electronic structures for α-Al2O3:Cr3+ and Al20B4O36:Cr3+, suggesting that the observed zero phonon R-line (2Eg) emission, arising from the 2Eg→4A2g transition in α-Al2O3:Cr3+, might also be present in Al20B4O36:Cr3+. Based on these findings, we prepared Al20B4O36:Cr3+ phosphors using a simple solid reaction method and confirmed that Al20B4O36:Cr3+ indeed exhibits a similar ultra-intense pure ZPL emission centered at 694 nm. Moreover, Al20B4O36:Cr3+ phosphors demonstrate remarkable properties including a high internal quantum efficiency (IQE) of 98.2 % and superior luminescence thermal stability compared to α-Al2O3:Cr3+. A phosphor converted light emitting diode (pc-LED) is developed by coating Al20B4O36:Cr3+ phosphor onto a near-ultraviolet LED chip. The lighting from this deep-red LED significantly impacts the photomorphogenesis of bean sprouts. Our study showcases a rational approach to design novel Cr3+ doped phosphors with enhanced luminescent properties, tailored for specific applications.

Spectroscopic properties and thermal stability of a Mn4+-doped polyfluoride phosphor for application in solid-state lighting

In this study, an efficient polyfluoride red-emitting phosphor, Cs3RbGe2F12:Mn4+ (denoted as CRGF:Mn), has been synthesized using a simple co-precipitation method. The crystal and electronic structures, spectroscopic properties, and photoluminescence thermal stability of CRGF:Mn have been systematically characterized. The results show that Mn4+ ions experience a strong crystal field and present a series of intense red emission peaks under blue light excitation. Moreover, CRGF:Mn exhibits a high color purity (95.1 %), high internal quantum efficiency (82.4 %), and enhanced photoluminescence thermal stability at 150 °C, with an intensity of 113 % relative to room temperature. A warm white light-emitting diode exhibiting a low correlated color temperature (3572 K), high color rendering index (90.7), and suitable luminous efficiency (132.6 lm/W) was prepared using CRGF:Mn as a red component, demonstrating viable application in solid-state lighting.

Full-visible-spectrum LED lighting by using a near-UV-excitable broadband blue-emitting Ca2LuHf2GaAl2O12:Ce3+ garnet phosphor

Highly efficient broadband blue-emitting phosphors are urgently needed for full-visible-spectrum white light-emitting diodes (WLEDs). Herein, we report a new highly luminescent garnet-type Ca2LuHf2GaAl2O12:Ce3+ (abbreviated as: CLHGAO:Ce3+) blue phosphor enabling full-visible-spectrum LED lighting. These CLHGAO:Ce3+ phosphors doped with different Ce3+ concentrations have been prepared by using a high-temperature solid-state reaction approach, and their phase purity, crystal structure, luminescent properties, CIE color coordinates, and quantum efficiency have been systematically studied. Importantly, CLHGAO:Ce3+ blue phosphors show a broadband excitation spectrum in the 300–450 nm spectral range peaking around 398 nm, matching well with the emission wavelengths of commercial near-ultraviolet LED chips (380–420 nm). Upon 398 nm excitation, the optimal CLHGAO:2%Ce3+ phosphor sample generates a bright broad blue emission band (emission peak: 472 nm; bandwidth: 84 nm) with high internal quantum efficiency of 79.2% and external quantum efficiency of 55.3%. Notably, the emission intensity of CLHGAO:2%Ce3+ phosphor is about 1.87 times higher compared to the commercial BaMgAl10O17:Eu2+ blue phosphor (emission peak: 451 nm; bandwidth: 53 nm). Finally, a white LED device is fabricated with a 395 nm near-UV LED chip with CLHGAO:2%Ce3+ blue phosphor and commercial (Ba,Sr)2SiO4:Eu2+ green phosphor as well as commercial CaAlSiN3:Eu2+ red phosphor, and the device demonstrates bright warm-white emission with an ultrahigh color rendering index (Ra = 95.1, R9 = 97.8, R12 = 88.4) and low correlated color temperature of 3540 K. These results show that as-developed blue-emitting CLHGAO:Ce3+ garnet phosphors with superior photoluminescence properties can potentially be used in phosphor-converted full-visible-spectrum WLEDs.