High Index Contrast Research Articles

Holographically fabricated out-of-plane blazed gratings and channel waveguides in silica for integrated free-space beam delivery.

Grating couplers are widely used in integrated optics to generate free-space beams and facilitate localized interactions with systems such as atom or ion traps. However, etched devices often exhibit small-scale inconsistencies; exacerbated by the high index contrast of the devices, this can lead to phase errors, limiting devices to a sub-millimeter scale. Here we present the first demonstration, to our knowledge, of tilted, out-of-plane blazed gratings in planar silica fabricated by UV inscription using a 213 nm laser. Our devices deliver collimated and focusing beams into free space from a waveguide input without the need for additional optics such as beam expanders.

Scalable SOA-based Banyan optical space switch on InP membrane on silicon (IMOS)

Optical switches (OS) are vital for meeting modern data centers’ capacity and latency needs, overcoming the bandwidth and speed limitations that electronic switches encounter. To this end, this work proposes a semiconductor optical amplifier (SOA)-based OS on the IMOS, a unique platform with a combination of high refractive index contrast for compactness and monolithic active-passive integration for active functionalities, thereby enabling the creation of compact SOA-based OSes. An 8 × 8 Banyan SOA-based OS is integrated on a 4 × 4 mm2 area on the standard 4 × 6 mm2 IMOS cell. This marks the first application of the IMOS technology platform for SOA-based OSes and sets the stage for compact and large-scale monolithic photonic integrated OS circuits. The basic 2 × 2 switch module delivers a high optical signal-to-noise ratio (OSNR) and an extinction ratio (ER) above 45 dB. Employing NRZ-OOK routing on the 2 × 2 basic OS module, a 15 dB input power dynamic range (IPDR) is achieved within a 1 dB power penalty at 12.5 Gb/s. Data routing at higher data rates of 25 Gb/s and 40 Gb/s incurs power penalties of 0.8 and 1.4 dB, respectively. Furthermore, data routing for a 3-stage 8 × 8 switch operating at 25 Gb/s results in a power penalty of 1.2 dB. Compared to the 1-stage 2 × 2 switch, only a 0.4 dB additional penalty is observed despite incorporating 2 additional SOAs in the cascade. This indicates that the switch can scale to higher radix to accommodate multi-stage switches with numerous ports, large bandwidth, and fast speed, which is essential in modern large-scale data centers.

All-dielectric transmissive narrow-band filters adjustable within wide spectral range

The challenge of obtaining transmission spectra with both a wider tunable spectral range and high resolution persists. In this paper, a novel all- dielectric transmissive grating structure based on Mie resonance is proposed. The structure excites the Mie resonance by embedding a high refractive index contrast grating in a KF-Si film system band-stop filter. The dipole resonance energy is confined within the high refractive index silicon grating material, expanding the cutoff bandwidth of the KF-Si film system to over 400 nm and achieving single-peak transmission in the visible range. And the continuous transmission spectrum has an adjustable range of 300 nm with the highest spectral resolution (FWHM) (∼20 nm) can be achieved by adjusting the grating period. To suppress the coupling energy excitation between the higher-order magnetic dipole and the substrate, a silicon-rich nitride (SRN) matching layer is introduced between the KF-Si film system and the substrate. This layer enhances the intensity of the resonance peaks while simultaneously suppressing the short-wavelength sidebands, thereby improving the saturation and purity of the spectrum. In addition, we obtained a large angular tolerance of up to 15° by stacking the silicon film system. This work is of great significance for the advancement of hyperspectral imaging and display technology.

Microresonator-enhanced quantum dot single-photon emission in GaAs-on-insulator platform

Abstract Single-photon emitters play a crucial role in integrated photonic quantum systems across various material platforms. In this study, we present a cavity-enhanced quantum dot single-photon source in a high-index contrast material platform (GaAs-on-insulator). A quantum dot is embedded in a microring resonator with a quality factor of approximately 9000, where the cavity-induced light enhancement results in a spontaneous emission acceleration factor of around 2.6, and we achieve a g(2)(0) as low as 0.03±0.02 and post-selected two-photon interference visibility of 51.7% ± 3.2% for the single-photon source. This demonstration shows the potential of the GaAs-on-insulator platform for scalable on-chip quantum information processing

Low cross-talk optical addressing of trapped-ion qubits using a novel integrated photonic chip

Individual optical addressing in chains of trapped atomic ions requires the generation of many small, closely spaced beams with low cross-talk. Furthermore, implementing parallel operations necessitates phase, frequency, and amplitude control of each individual beam. Here, we present a scalable method for achieving all of these capabilities using a high-performance integrated photonic chip coupled to a network of optical fibre components. The chip design results in very low cross-talk between neighbouring channels even at the micrometre-scale spacing by implementing a very high refractive index contrast between the channel core and cladding. Furthermore, the photonic chip manufacturing procedure is highly flexible, allowing for the creation of devices with an arbitrary number of channels as well as non-uniform channel spacing at the chip output. We present the system used to integrate the chip within our ion trap apparatus and characterise the performance of the full individual addressing setup using a single trapped ion as a light-field sensor. Our measurements showed intensity cross-talk below ~10–3 across the chip, with minimum observed cross-talk as low as ~10–5.

Bioinspired Low-Angle-Dependent Photonic Crystal Elastomer for Highly Sensitive Visual Strain Sensor.

Photonic crystals (PCs) possess unique photonic band gap properties that can be used in the field of sensors and smart displays if modulated on the micronano structure. Both nonclose-packed (NCP) structure and high refractive index (RI) contrast of PC play important roles in response sensitivity during stretching. Herein, we constructed an NCP-structured PC strain sensor with high RI by a novel coating-etching strategy. Stretch-induced changes in structural color correspond to the strength of the force, enabling the detection of the strength of the acting force by the naked eye. The flexible 3D cross-linked network constructed by poly(ethylene glycol) phenyl ether acrylate and pentaerythritol tetrakis(3-mercaptopropionate) endows the sensor with excellent elasticity and robustness. The designed PC strain sensor achieves high mechanochromic sensitivity (∼8.3 nm/%, 0.02 to 4.21 MPa) and a substantial reflection peak shift (Δλ = 249 nm). More importantly, the high RI contrast (Δn = 0.43) between CdS and polymers imparts isotropic optical properties, ensuring a broad viewing angle while avoiding misleading signals. The research provides a novel fabrication strategy to construct sensitive PC strain sensors, expanding the prospective applicability to human movement monitoring and secure message encryption.

Low-loss and high-index contrast ultraviolet-C free-standing waveguides made of thermal silicon oxide.

Photonics in the ultraviolet provides an avenue for key advances in biosensing, pharmaceutical research, and environmental sensing. However, despite recent progress in photonic integration, a technological solution to fabricate photonic integrated circuits (PICs) operating in the UV-C wavelength range, namely, between 200 and 280 nm, remains elusive. Filling this gap will open opportunities for new applications, particularly in healthcare. A major challenge has been to identify materials with low optical absorption loss in this wavelength range that are at the same time compatible with waveguide design and large-scale fabrication. In this work, we unveil that thermal silicon oxide (TOX) on a silicon substrate is a potential candidate for integrated photonics in the UV-C, by removing the silicon substrate under selected regions to form single-side suspended ridge waveguides. We provide design guidelines for low-loss waveguide geometries, avoiding wrinkling due to residual intrinsic stress, and experimentally demonstrate waveguides that exhibit optical propagation losses below 3 and 4 dB/cm at a wavelength of 266 nm with claddings of air and water, respectively. This result paves the way for on-chip UV-C biological sensing and imaging.

Large effective length and high efficiency by embedding L-shaped radiating blocks in subwavelength grating slot waveguide

Integrated optical antennas featuring large effective lengths and high radiation efficiency (RE) are essential to chip-scale light detection and ranging technology. However, there are challenges in simultaneously achieving both large effective length and high RE in silicon photonics platforms with high refractive index contrast. For traditional silicon waveguide grating antennas based on silicon photonics, the RE is relatively low and the antenna effective lengths are constrained to several hundred micrometers because of the high refractive index contrast. In this article, an embedded grating waveguide antenna which is L-shaped radiating blocks embedded in the slot gap of a silicon subwavelength grating slot waveguide is proposed and investigated numerically. Simulation results indicate the antenna’s effective length is above 4.25 mm, and the far-field divergence angle is near 0.0197°. Using L-shaped radiation blocks can break the diffraction’s perpendicular symmetry and increase the antenna’s RE to near 0.75 at 1550 nm compared to traditional design. Meanwhile, the antenna’s field-of-view reaches around 17.5° × 48.15° (θ× ϕ) to satisfy the needs of conventional optical phased arrays.

Free-standing microscale photonic lantern spatial mode (De-)multiplexer fabricated using 3D nanoprinting

Photonic lantern (PL) spatial multiplexers show great promise for a range of applications, such as future high-capacity mode division multiplexing (MDM) optical communication networks and free-space optical communication. They enable efficient conversion between multiple single-mode (SM) sources and a multimode (MM) waveguide of the same dimension. PL multiplexers operate by facilitating adiabatic transitions between the SM arrayed space and the single MM space. However, current fabrication methods are forcing the size of these devices to multi-millimeters, making integration with micro-scale photonic systems quite challenging. The advent of 3D micro and nano printing techniques enables the fabrication of freestanding photonic structures with a high refractive index contrast (photopolymer-air). In this work we present the design, fabrication, and characterization of a 6-mode mixing, 375 µm long PL that enables the conversion between six single-mode inputs and a single six-mode waveguide. The PL was designed using a genetic algorithm based inverse design approach and fabricated directly on a 7-core fiber using a commercial two-photon polymerization-based 3D printer and a photopolymer. Although the waveguides exhibit high index contrast, low insertion loss (−2.6 dB), polarization dependent (−0.2 dB) and mode dependent loss (−4.4 dB) were measured.

Solution-Processed One-Dimensional Photonic Crystals Based on Hollow Silica Exhibiting High Refractive Index Contrast.

Poor interfacial quality and low refractive index contrast (Δn) are critical challenges for the development of high-performance one-dimensional photonic crystals (1DPhCs) via solution methods that impede their optical efficiency. Herein, we introduce an innovative approach by hybridizing hollow SiO2 with poly(vinyl alcohol), referred to as PHS, followed by alternate assembly with TiO2 via spin-coating, achieving a 1DPhC with Δn = 0.76 at the wavelength of 550 nm. This method circumvents the need for high-temperature treatment and complex curing conditions, resulting in a 1DPhC with superior interfacial and optical characteristics. By adjusting the thickness of the PHS layers, we can finely tune the reflectance spectrum, attaining over 99% reflectance at the photonic band gap. Furthermore, 1DPhC demonstrates excellent adhesion to polycarbonate substrates and retains its optimal optical performance even after rigorous environmental testing, including hygrothermal cycles, exposure to hot water, friction, and solvent sonication. This research paves the way for the facile fabrication of high-performance 1DPhCs under mild conditions, offering new perspectives for photonic material processing.

Phase Composition of HiVac-VPE Lithium Niobate Optical Waveguides Identified by Spectroscopic Investigations.

High-index contrast lithium niobate waveguides, fabricated by the High Vacuum Vapor-phase Proton Exchange (HiVac-VPE) technique, are very promising for increasing both the optical nonlinear and electro-optical efficiencies of photonic integrated devices. So as to play this role effectively, it is mandatory to know the crystallographic phase composition of waveguides and the position of protonated layers for appropriate tailoring and optimization based on the intended applications. In addition, the estimation of structural disorder and electro-optical properties of the waveguides are also of high interest. Benefiting from Raman spectroscopy, IR reflection, IR absorption, and UV-VIS absorption, the HxLi1-xNbO3 phase compositions, as well as the structural disorder in waveguides, were determined. Based on experimental data on the shift of the fundamental absorption edge, we have quantitatively estimated the electro-optic coefficient r13 in as-exchanged waveguides. The electro-optical properties of the waveguides have been found to be depending on the phase composition. The obtained results allow for reconsidering the proton exchange fabricating process of photonic nonlinear devices and electro-optic modulators based on high-index contrast channel waveguides on the LiNbO3 platform.

On-chip ultra-high rejection and narrow bandwidth filter based on coherency-broken cascaded cladding-modulated gratings

Bragg filters are of essential importance for chip-scale photonic systems. However, the implementation of filters with sub-nanometer bandwidth and rejection beyond 70 dB is hindered by the high index contrast of the silicon-on-insulator platform, which makes filters prone to fabrication imperfections. In this paper, we propose to combine coherency-broken cascading architecture and cladding modulation to circumvent the intrinsic limitation. The cascading architecture effectively prevents the accumulation of phase errors, while the cladding modulation offers additional design freedom to reduce the coupling coefficient. A bimodal Bragg filter with a testing-equipment-limited rejection level of 74 dB and a 40 dB bandwidth of 0.44 nm is experimentally demonstrated. The minimum feature size is 90 nm, which significantly relieves the fabrication constraints.

Polarization‐Enabled Tuning of Anapole Resonances in Vertically Stacked Elliptical Silicon Nanodisks

This work presents the polarization‐dependent behavior of the anapole state in stacked amorphous silicon (a‐Si) nanodisks with elliptical geometries. Using SiO2 as a spacer layer between the a‐Si disks, the high index contrast between these materials can be used to significantly reduce the fabrication complexity of the system compared to traditional methods that require additional etching of the spacers. A novel way of continuous tuning of the electric dipole anapole excitation within elliptical stacked a‐Si nanoresonators is demonstrated. By rotating the incident electric field's polarization angle, the anapole state can be selectively excited at two distinct wavelength positions separated by 80 nm. Experimental results show characteristic dips in the reflectance of the fabricated elliptical a‐Si stacks with wavelength positions between 1135 and 1217 nm depending on the polarization angle of the incident field which is corroborated by FDTD simulations. Through simulating the internal electric field in the resonators and using multipole decomposition, it is shown that the reflectance dips are due to anapole excitation in the individual disks. The capability to excite anapoles at two distinct wavelengths in the same structure has promising implications for the development of tunable sensors, frequency converters, and quantum memory applications.

Fast, Precise, High Contrast Laser Writing for Photonic Chips with Phase Aberrations

AbstractIntegrated photonic chips have significant potential in telecommunications, classic computing, quantum systems, and topological photonics. Direct laser writing offers unique capability for creating three‐dimensional photonic devices in an optical glass chip with quick prototyping. However, it is a challenge for existing laser writing schemes to create index‐modified structures in glass that precisely match the laser focal shape while also achieving high refractive index contrasts and high scanning speeds. Here, we introduce a refractive index modification scheme that combines the advantages of non‐thermal and thermal regime fabrication methods. We also propose a waveguide formation model that is verified through a thorough study on the effects of phase aberrations. The presented new photonic chip fabrication scheme uses a novel focal intensity distribution, where pulse energy is relocated to the bottom of a laser focus by manipulating primary and higher order spherical aberrations. The technique can produce index modifications with high scanning speed (can be 20 mm/s or higher), high index contrast (ranging from 0.009 to 0.021), and high precision to fabricate with arbitrary cross‐sections. This method has potential to expand the capabilities of photonic chips in applications that require small‐scale, high precision, or high contrast refractive index control.

Hot-press melt-assembly anisotropic porous structure with enhanced radiative cooling

Passive daytime radiative cooling (PDRC) is a promising and sustainable technology, achieving subambient cooling of objects without electrical consumption. Current PDRC designs realize efficient cooling performance, but their complicated and expensive fabrication approaches remain a challenge. Herein, we present a simple, versatile, and effective morphology control method based on the hot-press melt-assembly approach for fabricating tunable anisotropic porous polymethyl methacrylate (PMMA) films with high-efficiency daytime radiative cooling capability. The abundant and disordered micro/nanopores in the PMMA films caused by localized melting and bonding of particles reinforce scattering of the incident sunlight. Apart from the high refractive index contrast between PMMA and air within the porous structure, the dispersed PMMA particles exhibit an apparent micro/nanoplatelet morphology after hot pressing, enhancing the backscattering of sunlight within a porous PMMA film and contributing to the high-performance subambient radiative cooling. Therefore, the porous PMMA film features an ultrahigh solar reflectance of 0.95 and strong mid-infrared thermal emittance of 0.93, allowing for a peak subambient cooling temperature reduction of 9.9 °C under a solar irradiance of 700 W/m2 with an average radiative cooling power of 98 W/m2 during the daytime. Furthermore, the hot-press melt-assembly method is a cost-effective and high-efficient process for fabricating the desirable micro/nanoporous structure, providing a practical and effective pathway toward a large-scale production for excellent passive radiative cooling.

Sb2S3 as a low-loss phase-change material for mid-IR photonics

We study the mid-IR optical properties of Sb2S3 – a phase-change material (PCM) with high potential for mid-IR integrated photonics. We show that Sb2S3 exhibits a high refractive index contrast Δn ≈ 1 between its two phases and an extinction coefficient k below 10−2 at mid-IR wavelengths (up to ∼10 µm). We study the impact of 100 nm Sb2S3 cladding on SiGe-on-Si waveguides and experimentally show that it brings additional propagation loss below 1 dB/cm in the 3.3–3.9 µm wavelength range in both phases. These findings pave the way for new uses of Sb2S3 in mid-IR integrated photonics.

On-Chip Lasers for Silicon Photonics

With the growing trend in the information industry, silicon photonics technology has been explored in both academia and industry and utilized for high-bandwidth data transmission. Thanks to the benefits of silicon, such as high refractive index contrast with its oxides, low loss, substantial thermal–optical effect, and compatibility with CMOS, a range of passive and active photonic devices have been demonstrated, including waveguides, modulators, photodetectors, and lasers. The most challenging aspect remains to be the on-chip laser source, whose performance is constrained by the indirect bandgap of silicon. This review paper highlights the advancements made in the field of integrated laser sources on the silicon photonics platform. These on-chip lasers are classified according to their gain media, including V semiconductors, III–V semiconductors, two-dimensional materials, and colloidal quantum dots. The methods of integrating these lasers onto silicon are also detailed in this review.

Nonlinear Dielectric Epsilon Near‐Zero Hybrid Nanogap Antennas

AbstractHigh‐index Mie‐resonant dielectric nanostructures provide a new framework to manipulate light at the nanoscale. In particular their local field confinement together with their inherently low losses at frequencies below their bandgap energy allows to efficiently boost and control linear and nonlinear optical processes. Here, nanoantennas composed of a thin indium‐tin oxide (ITO) layer in the center of a dielectric gallium phosphide (GaP) nanodisc are investigated. While the linear response is similar to that of a pure GaP nanodisc, it is shown that second harmonic generation is enhanced across a broadband wavelength range. On the other hand, third harmonic generation is only marginally enhanced around the epsilon‐near‐zero wavelength of ITO. Linear and nonlinear finite‐difference time‐domain simulations show that despite the high refractive index contrast leading to strong field confinement inside the antenna's ITO layer, the nanogap enhancement effect is mitigated by the low nonlinear volume of the nanogap layer and the antenna's behavior at the harmonic wavelength. Measurement of ITO and GaP nonlinear susceptibilities additionally show a comparative advantage for harmonic generation in GaP. These investigations deliver insights on the mechanisms at play in nonlinear nanogap antennas and their potential applications as nanoscale devices.

Multilayer dielectric reflector using low-index nanolattices.

Dielectric mirrors based on Bragg reflection and photonic crystals have broad application in controlling light reflection with low optical losses. One key parameter in the design of these optical multilayers is the refractive index contrast, which controls the reflector performance. This work reports the demonstration of a high-reflectivity multilayer photonic reflector that consists of alternating layers of TiO2 films and nanolattices with low refractive index. The use of nanolattices enables high-index contrast between the high- and low-index layers, allowing high reflectivity with fewer layers. The broadband reflectance of the nanolattice reflectors with one to three layers has been characterized with peak reflectance of 91.9% at 527 nm and agrees well with theoretical optical models. The high-index contrast induced by the nanolattice layer enables a normalize reflectance band of Δλ/λo of 43.6%, the broadest demonstrated to date. The proposed nanolattice reflectors can find applications in nanophotonics, radiative cooling, and thermal insulation.

Intermodal phase and group velocity matching for frequency tripling and doubly phase matched cascaded wave mixing in high index contrast double-clad optical fibers.

Frequency conversion in glass optical fibers requires both phase and group velocity matching between the pump and the higher harmonic when working with short pulses. We show that phase and group velocities can be matched simultaneously for third order nonlinear processes, by considering that the third harmonic propagates in the higher order azimuthally symmetric LP03-mode. Moreover, the pump and frequency tripled signals can form an intermodal two-color pump to trigger a cascaded wave mixing process, which generates the second harmonic LP01-mode. This opens avenues for second harmonic generation without need for a second order nonlinearity in the optical fiber.