The high overall carrier recombination is widely believed to be a main hurdle towards the high electric power output for perovskite solar cells (PSCs). However, the current leakage at the interfaces of the anode and electron transport layer induced by the carrier recombination has always been overlooked. Herein, we have introduced an ultra-thin lanthanum oxide (La2O3) layer, with a high dielectric constant (κ) and a wide band gap, as an anode modifier to suppress the recombination of electrons and holes. With La2O3 locating at the ITO/SnO2 interface, the power conversion efficiency (PCE) of PSCs was enhanced to 20.23% from 18.45% of the control devices, due to the improved short-circuit current (Jsc) and fill factor (FF). Overall, this work provides a new strategy to further alleviate the hole and electron recombination for developing the high efficiency PSCs.
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