High Electric Field Research Articles

Promising ferroelectric and piezoelectric response of Cr-doped ZnO nanofiller-incorporated PVDF flexible and laminated nanocomposite system.

Cr3+-doped ZnO (CZ) nanoparticles are prepared using hydrothermal and co-precipitation techniques. The desired crystallographic phase of the nanoparticles is confirmed using X-ray diffraction study. Rod-shaped and spherical morphologies of CZ nanoparticles prepared using hydrothermal and co-precipitation techniques were confirmed through FESEM observation. Each type of nanoparticle was taken separately in PVDF to understand the characteristic properties, such as dielectric, piezoelectric, and ferroelectric properties of the resultant CZ-PVDF nanocomposite films. All the nanocomposite films comprising rod-shaped or spherical CZ nanoparticles show butterfly loops with a low leakage current density of 10-5 A m-2 at a maximum electric field of 100 kV m-2 under J-E measurement. These findings suggest that the polarization property of CZ-PVDF nanocomposite films can be obtained at a high external electric field without causing electric breakdown in the samples. Dielectric permittivity as a function of temperature increases with an increase in the loading percentage of both rod-shaped or spherical CZ nanofillers in PVDF. Polarization response also improves with an increase in the loading percentage of CZ nanofillers in PVDF. In particular, the rod-shaped CZ nanofillers in PVDF with a higher loading percentage (CZHP2) result in a maximum polarization of (10 ± 0.29) × 10-4 μC cm-2, remanent polarization of (2 ± 0.04) × 10-4 μC cm-2, and coercive field of (10 ± 0.1) kV cm-1 at a maximum electric field of 50 kV cm-1. The CZHP2 nanocomposite film has a piezoelectric coefficient (d33) of (25 ± 0.24) pC N-1 and a power density of 1278.90 W m-3. These results indicate that the nanocomposite films have potential application in piezoelectric energy harvesters, offering a possible solution to the energy issue faced by modern society.

Nonlinear Dielectric Behavior of Polythiourea under a High Electric Field

Nonlinear Dielectric Behavior of Polythiourea under a High Electric Field

Effect of ionic liquid on soft epoxy-amine electroactuators

Energy conversion represents a challenge in various fields of applications such as soft robotics or microfluidics technologies, particularly in terms of electromechanical coupling for actuators. The dielectric elastomers are a variety of electroactive polymers (EAP) which require high electric fields to be used as actuators. It is well-known that the presence of ionic impurities can have an influence of their electro-mechanical response under high electric field (i.e. above 1 MV/m). More precisely, it can be responsible for the bending of the sample under constant electric field. Here, we investigate the impact of a small content, i.e. from 0.1 wt% to 10 wt% of an imidazolium Ionic Liquid (IL) on the electromechanical response of a soft epoxy-amine network. The interest of this study therefore lies in its position at the frontier between dielectric polymers and ionic polymers. Dielectric spectroscopy revealed a significant increase of electric conductivity (≈2 orders of magnitude) when adding only 0.1 wt% of IL and up to 4 orders of magnitude with 10 wt% of IL at T = 20 °C for f = 10 Hz. It also evidenced the presence of the electrode polarization for all the samples doped with IL. The bending test carried out at E = 0.1 MV/m revealed no bending for pure epoxy-amine and a slow kinetics of bending for all the samples doped with IL with displacement evolving throughout the experiment (i.e. over 4 h). As evidenced by dielectric spectroscopy and bending tests, it is clear that the presence of a small quantity of ionic moieties (whether doping agent or impurity) can strongly modify the electromechanical behavior of elastomer commonly described as dielectric.

Rational Design of A-Site Cation for High Performance Lead-Free Perovskite X-Ray Detectors.

Design of hypotoxic lead-free perovskites, e.g. Bismuth(Bi)-based perovskites, is much beneficial for commercialization of perovskite X-ray detectors due to their strong radiation absorption. Nevertheless, the design principles governing the selection of A-site cations for achieving high-performance X-ray detectors remain elusive. Here, seven molecules (methylamine MA, amine NH3, dimethylbiguanide DGA, phenylethylamine PEA, 4-fluorophenethylamine p-FPEA, 1,3-propanediamine PDA, and 1,4-butanediamine BDA) and calculated their dipole moments and interaction strength with metal halide (BiI3) are selected. The first-principles calculations and related spectroscopy measurements confirm that organic molecules (DGA) with large dipole moments can have strong interactions with perovskite octahedron and improve the carrier transport between the organic and inorganic clusters. Consequently, zero-dimensional single crystal (SC) (DGA)BiI5∙H2O is synthesized. The (DGA)BiI5∙H2O SCs demonstrate an exceptional carrier mobility-lifetime product of 6.55×10-3cm2V-1, resulting in the high sensitivity of 5879.4µCGyair -1cm-2, featuring a low detection limit (4.7nGyairs-1) and remarkable X-ray irradiation stability even after 100 days of aging at a high electric field (100Vmm-1). Furthermore, the (DGA)BiI5∙H2O SCs for imaging, achieving a notable spatial resolution of 5.5lpmm-1 are applied. This investigation establishes a pathway for systematically screening A-site cations to design low-dimensional SCs for high-performance X-ray detection.

Thick piezoelectric films by aerosol deposition at room temperature: corona poling and force sensing

In this study, we employed corona poling to improve the piezoelectric properties of as-deposited BaTiO3 films and conducted a vibration energy harvesting test. Dielectric measurements indicated that the dielectric constant of the as-deposited film increased with temperature, and the frequency dependence of the dielectric constant was minimal at room temperature. Applying an electric field of 1500 kV cm−1 resulted in a recoverable energy density of 7.1 J cm−3 and an energy storage efficiency of 54%. The corona polarization treatment could align dipoles under high electric fields and prevent dielectric breakdown owing to local defects created by the aerosol deposition (AD) process. The vibration test yielded a harvested energy of 172 nJ and an output voltage of 2.67 V, which is suitable for force sensor applications. Polarization via corona discharge is also feasible without an electrode. Integrating AD with corona poling may benefit new capacitors, sensors, and energy harvesting technologies.

Preparation and Properties of Nb5+-Doped BCZT-Based Ceramic Thick Films by Scraping Process.

A bottleneck characterized by high strain and low hysteresis has constantly existed in the design process of piezoelectric actuators. In order to solve the problem that actuator materials cannot simultaneously exhibit large strain and low hysteresis under relatively high electric fields, Nb5+-doped 0.975(Ba0.85Ca0.15)[(Zr0.1Ti0.9)0.999Nb0.001]O3-0.025(Bi0.5Na0.5)ZrO3 (BCZTNb0.001-0.025BiNZ) ceramic thick films were prepared by a film scraping process combined with a solid-state twin crystal method, and the influence of sintering temperature was studied systematically. All BCZTNb0.001-0.025BiNZ ceramic thick films sintered at different sintering temperatures have a pure perovskite structure with multiphase coexistence, dense microstructure and typical dielectric relaxation behavior. The conduction mechanism of all samples at high temperatures is dominated by oxygen vacancies confirmed by linear fitting using the Arrhenius law. As the sintering temperature elevates, the grain size increases, inducing the improvement of dielectric, ferroelectric and field-induced strain performance. The 1325 °C sintered BCZTNb0.001-0.025BiNZ ceramic thick film has the lowest hysteresis (1.34%) and relatively large unipolar strain (0.104%) at 60 kV/cm, showing relatively large strain and nearly zero strain hysteresis compared with most previously reported lead-free piezoelectric ceramics and presenting favorable application prospects in the actuator field.

Effects of NiO doping and trench wall tilt on Ga2O3 PiN diodes performance

Gallium Oxide (Ga2O3) is a promising material for next-generation power semiconductors due to its wide bandgap (∼4.9 eV), high Baliga's figure of merit (FOM) (3444 W/cmK), and high breakdown field (Ec, 8 MV/cm). To achieve high blocking and low leakage current, research has been conducted on PN heterojunctions and bevel structures. In this paper, we performed simulations using Sentaurus TCAD to investigate the impact of NiO doping concentration and NiO's trench tilt angle on the electrical characteristics of NiO/Ga2O3 PiN diodes with trench NiO. As the NiO doping concentration increased, the resistance decreased from 21.5 to 7.5 mΩcm2, and we observed the expansion of depletion from NiO to the NiO/Ga2O3 interface. Furthermore, we confirmed a reduction in resistance and a change in breakdown voltage with an increase in NiO trench tilt. By understanding the optimal angle to mitigate the concentration of high electric fields in the edge region, we anticipate the fabrication of stable Ga2O3 PiN diodes.

Electrokinetic particle trapping in microfluidic wells using conductive nanofiber mats.

The frequency dependence of electrokinetic particle trapping using large-area (>mm2) conductive carbon nanofiber (CNF) mat electrodes is investigated. The fibers provide nanoscale geometric features for the generation of high electric field gradients, which is necessary for particle trapping via dielectrophoresis (DEP). A device was fabricated with an array of microfluidic wells for repeated experiments; each well included a CNF mat electrode opposing an aluminum electrode. Fluorescent microspheres (1µm) were trapped at various electric field frequencies between 30kHz and 1MHz. Digital images of each well were analyzed to quantify particle trapping. DEP trapping by the CNF mats was greater at all tested frequencies than that of the control of no applied field, and the greatest trapping was observed at a frequency of 600kHz, where electrothermal flow is more significantly weakened than DEP. Theoretical analysis and measured impedance spectra indicate that this result was due to a combination of the frequency dependence of DEP and capacitive behavior of the well-based device.

Enhanced breakdown voltage for p-GaN gate AlGaN/GaN HEMT on AlN/Si with triple trenches: A simulation study

This study presents an analysis of an AlGaN/GaN high-electron-mobility transistor (HEMT) with a triple-trench structure (TT-HEMT) for the enhancement of breakdown voltage, which is often limited by the high electric field near the gate edge. Using COMSOL Multiphysics, simulations were run, with trenches made of gallium nitride (GaN) constructed between the GaN and aluminum nitride (AlN) nucleation layers. Each trench was positioned directly beneath the source, gate, and drain contacts. Under the metal gate, a p-type doped GaN cap is added to produce an enhancement mode device, which is more desirable in high-power applications. The results indicate that the effective dispersion of the electric field distribution enhances the breakdown voltage of the device by 70 % in comparison to a conventional HEMT. Additionally, the impact of various design parameters, such as the p-GaN doping concentration and the metal gate work function on the electrical performance, was also investigated. Overall, the proposed device structure exhibits superior electrical properties for high-power applications.

Cooperative dynamic polaronic picture of diamond color centers

Polarons can control carrier mobility and can also be used in the design of quantum devices. Although much effort has been directed into investigating the nature of polarons, observation of defect-related polarons is challenging due to electron-defect scattering. Here we explore the polaronic behavior of nitrogen-vacancy (NV) centers in a diamond crystal using an ultrafast pump-probe technique. A 10-fs optical pulse acts as a source of high electric field exceeding the dielectric breakdown threshold, in turn exerting a force on the NV charge distribution and polar optical phonons. The electronic and phononic responses are enhanced by an order of magnitude for a low density of NV centers, which we attribute to a combination of cooperative polaronic effects and scattering by defects. First-principles calculations support the presence of dipolar Fröhlich interaction via non-zero Born effective charges. Our findings provide insights into the physics of color centers in diamonds.

Energy storage efficiency and electrocaloric performances in lead-free Ba0.87Ca0.13(Ti0.9Zr0.1)0.98(Zn1/3Nb2/3)0.02O3 ceramic

Ba0.87Ca0.13(Ti0.9Zr0.1)0.98(Zn1/3Nb2/3)0.02O3 ceramic was prepared using a solid-state reaction method. This work investigates their dielectric, ferroelectric, energy storage, and electrocaloric properties. X-ray diffraction analysis confirms a pure perovskite structure. The dielectric constant reaches a maximum of 9364 at 326 K. Enhanced total energy density, recovered energy density, and energy storage efficiency are observed between 303 K and 363 K. Artificial neural networks (ANNs) are employed for the indirect determination of large ECE and responsivity based solely on measured ferroelectric polarization (P(E,T)). This approach offers rapid and accurate predictions with minimal experimental data, significantly accelerating the characterization of novel electrocaloric materials. The maximum ECE occurs above the Curie temperature (TC) and increases with higher electric fields. The ceramic exhibits significant ECE parameters around TC with a broad electrocaloric temperature span. Various figures of merit, including relative cooling power, refrigerant capacity, and temperature-averaged entropy change, are explored under different electric fields, demonstrating the material's potential for green cooling devices. These figures improve monotonically with increasing field strength. A comprehensive analysis of the field dependence of ΔS (entropy change) confirms the second-order nature of the electric phase transition through master curve analysis. In conclusion, these lead-free ceramics exhibit promising applications in high-performance energy storage devices and solid-state refrigeration technology.

Performance enhancements of HTS power cables by minimizing the electric field enhancements for electric transport applications

Abstract Design innovations to manage the electric field enhancements and successful use of cryogenic epoxy EP37 as electrical insulation for high temperature superconducting (HTS) cables for electric aircraft applications are reported. Detailed finite element analysis (FEA) of the electric field distribution shows that the highest electric field is at the interface of the ground and electrical insulation layers. The FEA led to the design, fabrication, and experimental characterization of four model cables with stress cones and a direct bond of the ground and insulation layers. Enhanced partial discharge inception voltage (PDIV) was achieved in the model cables by minimizing the electric field enhancements at the ground layer interface. Using a helium gas mixture with 4 mol% H2, with higher intrinsic dielectric strength than pure helium, further enhanced the PDIV. The results warrant further studies on long HTS cables with EP37 as electrical insulation with a direct bond between the insulation and ground layers.

High-field complex parameters characterization of PMN-PT single crystal/epoxy 1–3 composites (φ = 0.4) under a high AC electric field with a varied intensity

It is essential to characterize the high-field properties of piezoelectric composites for their applications in ultrasonic transducers. This study involved the development of an experimental characterization system of piezoelectric impedance spectra and mechanical quality factors under high-field conditions to analyze the properties of PMN-PT piezoelectric single-crystal composites. The impedance spectra and mechanical quality factors of a [001]c-poled 0.69PMN-0.31PT single crystal/epoxy 1–3 composite disk with filling ratio φ = 0.4 under thickness resonance mode were tested at different driving voltages ranging from 1 to 120 Vpp to explore the influence of AC electric field on the material properties. By utilizing a theoretical approach, an evaluation was conducted on the variations in the material properties such as stiffness, permittivity, piezoelectric coefficient, and electromechanical coupling factor, along with respective loss factors. Our results suggest that as the AC electric field increases, the elastic modulus c33D and the mechanical quality factor Qm decrease, while the piezoelectric strain coefficient d33 and the electromechanical coupling factor kt increase. However, the dielectric coefficient ε33X does not show an obvious change in this field range. Furthermore, the elastic loss factor tanϕ, the dielectric loss factor tanδ33′, the piezoelectric loss factor tanθ33′, and the electromechanical coupling loss factor tanχt all increase, indicating that the loss of the piezoelectric composite becomes more evident as the AC electric field grows.

Ionic conductivity and dielectric characteristics of a Li incorporated PVA electrolyte membrane and a study of a fully solid-state electrochromic device based on it

The construction and study of a fully solid state electrochromic (EC) device with cathodic coloration exhibiting very fast response times (< 1s) is reported using a WO3 EC layer and a poly (vinyl alcohol) (PVA)- Lithium acetate membrane electrolyte. Broadband dielectric studies on the polymer membranes with different Li concentrations show multiple relaxation mechanisms out of which a segmental relaxation prominent beyond a certain composition is strongly correlated with Li-ion conduction yielding better ionic conductivity and reversible coloration in the EC device. The relatively high Li conductivity in PVA has a direct correspondence with the lowering of the crystallinity of PVA and a decrease of the glass transition temperature, Tg with increasing Li addition. A simple model of the coloration process suggests that the short electrolyte diffusion length coupled with a high electric field and an interfacial emf that varies as ≈t−0.6 results in the swift current response of the film with an optimal performance at 20 wt.% Li in PVA, exceeding which irreversible coloration can occur on the surface. The transient current is crucial for the observed swift switching characteristics. Ageing studies for almost a month indicate potential stability of the EC device for over 150 cycles.

Effect of Dy2O3 doping on microstructure and electrical characteristics of ZnO linear resistors

ZnO linear resistors, due to its excellent performance, are widely used in numerous industries and gradually replacing traditional conductive resistors, presenting a broad prospect for application. To study the effects of lanthanide oxides on the microstructure and electrical properties of ZnO-based linear resistors, this paper prepared Dy2O3-doped ZnO-Al2O3-TiO2-NiO based linear resistors using a solid-state sintering method. The results showed that proper doping of Dy2O3 could inhibit the growth of ZnO grains, leading to more uniform grain growth. Additionally, doped with appropriate amount of Dy2O3 could enhance the linear performance of ZnO linear resistors, reduce the grain boundary barrier height (φb), and decrease dielectric loss. Linear resistors with nonlinearity coefficient (α) of 1.07, grain boundary barrier height (φb) of 0.0934 eV and resistance-temperature coefficient (αT) of −5.39 × 10−3/°C were obtained. The doping of Dy2O3 could improve the comprehensive performance of ZnO linear resistors, making the fabricated ZnO linear resistors are more suitable for working in high frequency electric fields. The study and analysis of Dy2O3 doped ZnO linear resistors are of significant importance for the preparation of high performance ZnO linear resistors.

Optimizing energy storage performance of lead zirconate-based antiferroelectric ceramics by a phase modulation strategy

Dielectric energy storage has gained considerable significance owing to the high energy requirements of human society. Lead zirconate-based (PZ) antiferroelectric materials have received much attention due to their fast discharge rate, high power density, and low cost. Nevertheless, their low energy storage density seriously limits their practical applications. To overcome this limitation, the phase modulation strategy via chemical modification was adopted to optimize the breakdown strength and phase switching field. Specifically, the antiferroelectric ceramics of (Pb0.97−xGd0.02Srx)(Zr0.87Sn0.12Ti0.01)O3 were prepared by the tape-casting method. An apparent multistage phase transition behavior revealed for x ≥ 0.05 is rarely discussed in reported Sr2+ modified PZ system. This is attributed to the coexistence of the main orthorhombic phase and the tetragonal phase. Although the transition near the lower field reduces the energy storage slightly, the disruption of the long-range order stabilizes the antiferroelectricity of the orthorhombic phase, hence elevating its transition field. In addition, the tetragonal phase with lower polarization suppresses the electrostrain thus improving the breakdown strength. Consequently, an ultrahigh recoverable energy storage density of 14.5 J/cm3 with a high energy efficiency of 81 % is achieved at a high electric field of 717 kV/cm for (Pb0.92Gd0.02Sr0.05)(Zr0.87Sn0.12Ti0.01)O3. Moreover, the fatigue resistance of this composition is excellent within 26,000 fatigue cycles. Besides, it exhibits a high discharge energy density of 9.4 J/cm3 and a great power density of 387 MW/cm3. These results confirm that the energy storage properties of PZ-based antiferroelectric materials can be effectively optimized via a phase modulation strategy.

Fluctuation effects in superconducting nanowires under electric field

This study applies the time-dependent Ginzburg–Landau (TDGL) theory with thermal noise to analyze the thermoelectric and transport properties of superconducting Sn nanowires, focusing on the thermopower (αxx) and the phase transition characteristics in the S-shaped J-E curves. We observe significant contributions from superconducting Cooper pairs, which remain nonzero above the critical temperature (Tc), indicating residual superconductivity due to strong thermal fluctuations. The S-like shape in the J-E curves is attributed to a dynamical instability transition temperature (T∗) at approximately 2.9 K, where thermal fluctuations dominate. Furthermore, we compare the resistance in the linear response to experimental data for Sn nanowires both below and above Tc. Below Tc, the resistance sharply decreases, reflecting the robust superconducting state, while above Tc, it increases, aligning with normal state behavior. In nonlinear response case, our results indicate that high electric fields can be effectively used to suppress order-parameter fluctuations and the electrical conductivity in superconducting nanowires. The findings provide critical insights into the thermoelectric behavior and phase transitions in Sn nanowires, highlighting the importance of Cooper pair dynamics in shaping the transport properties of one-dimensional superconductors. This understanding is essential for the development of advanced nanoelectronic devices leveraging these unique superconducting properties.

Engineering Multiphase Phase Transitions for Exceptional Electrocaloric Performance and Ultraweak Electrostrictive Response in Ferroelectrics.

In the pursuit of eco-friendly alternatives for refrigeration technology, electrocaloric materials have emerged as promising candidates for efficient solid-state refrigeration due to their high efficiency and integrability. However, current advancements in electrocaloric effects (ECEs) are often constrained by high temperatures and elevated electric fields (E-field), limiting practical applicability. Informed by phase-field simulation, this study introduces a (1-x)Pb(Yb1/2Nb1/2)O3-xPb(Mg1/3Nb2/3)O3 system, strategically engineered to incorporate highly ordered YN and disordered MN mixtures. The synergistic interplay between E-field/temperature-induced polarization reorientation and cation shift initiates multiple ferroelectric-antiferroelectric-paraelectric phase transitions. Our results demonstrate that under a moderate E-field of 50 kV cm-1, the x = 0.22 composition achieves remarkable performance with a giant temperature change (ΔT) of 3.48 K, a robust ECE strength (ΔT/ΔE) of 0.095 K cm kV-1, and a wide temperature span (Tspan) of 38 °C. Notably, the disrupted lattice structure contributes to ultralow electrostrains below 0.008%, with an average electrostrictive coefficient Q33 of 0.007 m4 C-2. The significantly weakened electrostrictive activity favors enhancing the performance stability of subsequent devices. This work introduces an innovative strategy for developing robust electrocaloric materials, offering substantial ΔT and low electrostrains, presenting promising advancements in ECE applications with an extended lifetime.

Electrical Conductivity Characteristic of Polyimide under Long-Term Combined Electron Irradiation and Thermal Cycle in Vacuum.

During long-term operation, low-earth-orbit spacecraft are exposed to a severe environment of electron irradiation and thermal cycle. This affects the electric properties of polyimide, an essential insulation material for spacecraft electrical transmission equipment, particularly the conductivity characteristic. Therefore, this paper investigates the conductivity and its evolution of polyimide after the combination of 20 keV, 8 nA/cm2 electron irradiation, and 243-343 K, 5 K/min thermal cycle in a vacuum environment for 432 h. The results show that the conductivity increases by about 2 orders of magnitude over 432 h, with the threshold field for electric-field-dependent conductivity decreasing. The conductivity growth rate varies, rising during the first 192 h, then increasing in the midelectric field, and decreasing in the high electric field regions. The thermally stimulated depolarization current method demonstrates that increases in γ, β1, and β2 trap densities, associated with enhanced motility of end groups, diamines, and dianhydrides after long-chain breaks, lead to higher conductivity and growth rate. Additionally, increases in β3 and α trap densities, related to increased C═O bonds and free radicals, reduce the threshold field and the conductivity growth rate in the range of 57.0-100.0 kV/mm after 192 h. These findings provide a reference for the performance evaluation and enhancement of spacecraft polyimide materials.

First demonstration of Sn diffusion into gallium oxide from poly-tetraallyl tin deposited by initiated chemical vapor deposition by thermal treatment

Gallium oxide (Ga2O3) is attracting attention as a next-generation semiconductor material for power device because it has a wide energy band gap and high breakdown electric field. We deposited a Sn polymer, poly-tetraallyl tin, on Ga2O3samples using a disclosed initiated chemical vapor deposition (iCVD) process. The Sn dopant of the Sn polymer layer is injected into the Ga2O3through a heat treatment process. Diffusion model of Sn into the Ga2O3is proposed through secondary ion mass spectroscopy analysis and bond dissociation energy. The fabricated device exhibited typical n-type field-effect transistor (FET) behavior. Ga2O3Sn-doping technology using iCVD will be applied to 3D structures and trench structures in the future, opening up many possibilities in the Ga2O3-based power semiconductor device manufacturing process.