High Dielectric Constant Research Articles

Thermally Robust Aramid Triboelectric Materials Enabled by Heat‐Induced Cross‐Linking

AbstractThe rapid development of the Internet of Things has led to numerous functional electronic devices, making it a significant challenge to provide power for these distributed devices. Triboelectric self‐power technology is ideal for smart devices due to its material diversity and high energy efficiency. However, traditional triboelectric materials have weak electrostatic induction due to their low dielectric constant. Additionally, the thermionic emission effect reduces their electric output in high temperatures, limiting their applications. This study designes a thermally robust aramid triboelectric material with a high dielectric constant through heat‐induced cross‐linking heterogeneous interface engineering. This novel material not only achieves high triboelectric output but also maintains high performance across a wide temperature range. The heat‐induced cross‐linking process enhances the interaction between aramid nanofibers and Al2O3 nanosheets, significantly improving the electrical performance, and flame retardance of the material, and the relative dielectric constant increases 16‐fold. The triboelectric nanogenerator constructed with this material achieves a power density of 3.97 W m−2, and maintains high triboelectric output at 260 °C. Finally, a self‐powered detection system collects high‐temperature gas energy and drives sensors is designed. This research presents a novel strategy for high‐performance triboelectric materials, showing significant potential for self‐powered devices.

The scattering lifetime and thermoelectric properties for an inorganic flexible material of α-Ag2S

To clarified the influence of the scattering mechanism on thermoelectric properties α-Ag2S, the relationship between the scattering lifetime and transport properties of the inorganic flexible material α-Ag2S are investigated for the first time using first-principles calculation, Boltzmann transport theory, and the momentum relaxation time approximation (MRTA). Calculations reveal that the static dielectric constant, high frequency dielectric constant, and elastic constant are anisotropic. The acoustic deformation potential scattering (ADP), the ionized impurity scattering (IMP), the piezoelectric scattering (PIE), and the polar optical phonon scattering (POP) of α-Ag2S are first calculated, and the IMP and POP are found to be the major contributions for scattering mechanism. Furthermore, it is also found that the transverse wave of α-Ag2S effects on electrons along the XZ shear strain direction are non-negligible. These insights provide a new direction for the regulation of thermoelectric properties in α-Ag2S by offering a deeper understanding of the scattering mechanisms.

Prominent cycling reversibility and kinetics enabled by CaTiO3 protective layer on Zn metal for aqueous Zn-ion batteries

Aqueous Zn-ion batteries (AZIBs) have received considerable attention owing to their various advantages such as safety, low cost, simple battery assembly conditions, and high ionic conductivity. However, they still suffer from serious problems, including uncontrollable dendrite growth, corrosion, hydrogen evolution reaction (HER) from water decomposition, electrode passivation, and unexpected by-products. The creation of a uniform artificial nanocrystal layer on the Zn anode surface is a promising strategy for resolving these issues. Herein, we propose the use of a perovskite CaTiO3 (CTO) protective layer on Zn (CTO@Zn) as a promising approach for improving the performance of AZIBs. The CTO artificial layer provides an efficient pathway for Zn ion diffusion towards the Zn metal because of the high dielectric constant (εr = 180) and ferroelectric characteristics that enable the alignment of dipole moments and redistribute the Zn2+ ions in the CTO layer. By avoiding the direct contact of the Zn anode with the electrolyte solution, the uneven dendrite growth, corrosion, parasitic side reactions, and HER are mitigated, while CTO retains its mechanical and chemical robustness during cycling. Consequently, CTO@Zn demonstrates an improved lifespan in a symmetric cell configuration compared with bare Zn. CTO@Zn shows steady overpotential (∼68 mV) for 1500 h at 1 mA cm−2/0.5 mA h cm−2, excelling bare Zn. Moreover, when paired with the V2O5-C cathode, the CTO@Zn//V2O5-C full battery delivers 148.4 mA h g−1 (based on the mass of the cathode) after 300 cycles. This study provides new insights into Zn metal anodes and the development of high-performance AZIBs.

Design and electromagnetic shielding of Bi0.5Na0.5TiO3 ceramics as meta-surface absorber for high-frequency microwave application

EMI shielding reduces ambient electromagnetic (EM) radiation by reflecting and absorbing EM waves. Rapid technological growth has increased electronic gadgets and EM radiations, threatening the environment. Microwave materials with high absorption power and cheap cost are crucial for eliminating electromagnetic difficulties in stealth technologies. This study used a conventional solid-state reaction technique to prepare Bi0.5Na0.5TiO3 (BNT) solid solutions and examined their structural, ferroelectric, dielectric, and shielding characteristics. This research describes an EMI shielding material that efficiently absorbs EM wave-induced radiation. Characterizations have been done to evaluate material behavior to support EMI shielding and confirm its absorbing nature. Field emission scanning electron microscopy (FESEM), Raman spectroscopy, and X-ray diffraction (XRD) were employed to examine the surface morphology, local lattice deformation with ionic configuration, and crystal structure. BNT exhibited a rhombohedral structure with R3c symmetry space group with crystallize size 81.5 nm and showed eight Raman active modes with an average grain size of 1.67 μm. The high dielectric constant, reduced dielectric tangent loss, and enhanced polarization value make BNT ceramic a good choice for electrical devices and microwave applications. BNT ceramics showed EMI shielding owing to absorption (SET ∼ −23.65 dB, SEA ∼ −18.91 dB) at 9.2 GHz in the X-band (8.2–12.4 GHz). Meta-surface-based BNT absorbers were designed and simulated in the CST software. The peak depicted the absorption at 9.2 GHz with absorptivity of 91.56 %, 85.03 %, 84.36 %, and 64.6 % for designs 1, 2, 3, and 4, respectively. BNT ceramics have exceptional dielectric absorption properties, and dielectric and magnetic losses, which make them suitable for EMI shielding and absorption applications in the microwave region.

Insertable, dual-density dielectric barrier for acoustic pressure level reduction in a high-performance human head-only MRI system

We report use of a dual-density dielectric barrier surrounding a detachable high-pass radiofrequency (RF) birdcage coil to achieve an order-of-magnitude reduction of acoustic noise in a high-performance head gradient system. The barrier consisted of a 4.5 mm-thick mass-loaded vinyl and a 6 mm-thick polyurethane foam. It was inserted into the radial gap between the birdcage coil and the RF shield in a prototype head-only gradient system at 3 T. More than 9 dBA reduction of sound pressure level was achieved on the average with representative, high acoustic-noise imaging sequences. Increased acoustic damping was apparent from acoustic impulse response functions. High dielectric constant of the mass-loaded vinyl effectively added distributed capacitance to the birdcage coil, lowering the resonance frequency, but not seriously degrading the RF transmission performance. The barrier occupied the radial space normally used for air cooling of the RF coil and the RF shield. The resulting omission of air cooling was found to be acceptable with efficient gradient thermal management and use of a high-resistivity RF shield for eddy current reduction. The proposed method can improve patient experience while preserving image quality in a high-power head-only gradient system.

Tuning the local structure of (Sm, Co) Co-doped Al2O3 system for optical band gap and low dielectric loss

This study is about the qualitative description of the high dielectric constant (>103) and low dielectric loss in a two co-existing phases. According to earlier beliefs, a material with high dielectric constant will exhibit high dielectric loss. However, this study gives the opposite, where a material with high dielectric constant can exhibit low loss. Herein, we report on the effect of tetrahedral – octahedral interaction in a γ- Al2O3 and CoAl2O4 biphasic system. Phase identification was carried out using Synchrotron x-ray carrying a wavelength of 0.7 Å. The disorder caused by varying cobalt (Co) concentration results in a two co-existing phase system with varying local polarizability due to mixing of cations in a host matrix. In addition, a decreasing trend in the band gap energy has been observed for both the phases as a function of increasing Co concentration, which is attributed to the intra-gap localized density of states determined from the UV–Vis diffuse reflectance spectroscopy (DRS).

A wideband flexible antenna utilizing PMMA/PVDF‐HFP/PZT polymer composite film and silver‐based conductive ink for wearable applications

AbstractThe relentless drive towards miniaturization and seamless integration of electronic components in wireless communications and wearable devices has significantly increased the demand for flexible, cost‐effective composites with high dielectric constants and low losses. This study presents a wideband, low‐profile, and flexible antenna with excellent on body radiation performance for wearable applications. The antenna is designed using a low‐loss composite film based on PMMA‐PVDF‐HFP‐PZT and silver‐based ink. The proposed flexible antenna exhibits a wide bandwidth of 132.16% with a voltage standing wave ratio (VSWR) of less than two. It achieves a peak gain of 2.76 dBi at 2.92 GHz and maintains a maximum radiation efficiency of 80% across the 1.26–6.17 GHz frequency range. These characteristics demonstrate that the antenna is an effective solution for achieving high data rates and reliable communication links. The antenna's suitability for wearable applications is assessed by testing it on a simulated human body and analyzing its behavior under physical deformation. The results under bending showed only a minimal frequency detuning, which is negligible given the antenna's wide operational bandwidth. The specific absorption rate (SAR) analysis shows values of approximately 1.88 W/kg at 3.5 GHz with an input power of 0.5 W, and 0.279 W/kg at 5.8 GHz with an input power of 0.45 W, which complies with established safety limits for exposure. Overall, these results suggest that the proposed antenna is a viable solution for integration into wearable medical devices, such as a doctor's chest badge, enabling noncontact interactions and reducing the risk of bacterial contamination.

B-site engineering in rare earth ferrites: Composition and polymorphic control of electrical and photocatalytic functionalities

Rare-earth perovskites possess structural features conducive to co-existence of interesting functionalities. This study establishes structural tunability of B-site tailored GdFeO3 and its implications. Isovalent introduction of In3+ at B-site by hybrid synthesis approach yielded GdInxFe1-xO3 (0.0 ≤ x ≤ 1.0) system. The synthesis-route adopted could enable stabilization of metastable C-type and hexagonal (H) polymorphs that eventually led to thermodynamically stable phases in H (hexagonal), O (orthorhombic) and biphasic (H + O) phases. Gradual evolution of phases with respect to temperature as well as composition were studied with XRD, HT-XRD and Raman spectroscopy. Density functional theory was employed to explain prevalence of wide biphasic-field and it was attributed to non-favourable energetics of Fe3+ at trigonal-bipyramidal site in H-polymorph. The system exhibits structure and composition-dependent electrical behaviour and tunable band gap. Detailed study highlighted a very low leakage current(I) and low dielectric loss in In3+-rich polymorphs(H). Typically, GdInO3 shows I of 4 × 10−9A/cm2, high dielectric constant (ε) of 106 with a stable loss of 0.009. The energy storage performance showed decrease in recoverable E-density (Wrec) and increase in energy storage efficiency with In3+-content. Optimum properties were observed for equimolar composition, GdIn0.5Fe0.5O3 (Wrec= 560 mJ/cm3; ɳ= 82 %). An intriguing observation is effect of structure on visible light-catalysed degradation of methylene blue with O-polymorphs showing excellent photodegradation (̴ 99 % dye/180 min) while H-polymorphs performing abysmally. This is explained based on band gaps, surface charges and plausible difference in generation of photo-induced charge carriers.

Surface micro-welding strategy of h-BN assembled microspheres for composites with desirable thermal conductivity and a low dielectric constant

As electronic devices strive for higher integration and faster signal transmission, the demand rises for polymer composites with high thermal conductivity (TC) and low dielectric constant (εr). However, high TC composites often come with a high filler content, leading to a reduction in processibility and dielectric properties. Herein, by surface micro-welding strategy, we fabricated cohesive h-BN microspheres (SBO) with a quasi-hollow structure. The pre-constructed micro-nano network of h-BN inside the microsphere serves as a continuous pathway for heat transfer, while the internal space of the microsphere is divided into numerous gas chambers, establishing a foundation for low εr. Benefiting from this structure, the TC of the prepared composite is 2.12 W/m·K, and its εr is remarkably low at 3.24 (103 Hz), effectively balancing the TC and dielectric properties at a high filler loading. Furthermore, this designed structure significantly reduces the viscosity of the composite (measured 309 Pa s with a filler content of 50 wt% at 1s−1) due to the smooth surface of the microsphere. This strategy offers a facile approach for fabricating composites characterized by desirable TC, low εr and excellent processibility, showcasing promising prospects for advancement in the realm of microelectronics.

Improvement the dielectric and impedance properties of Pb-free Bi0.5Na0.5TiO3-SrTiO3 piezoelectric materials modified by Fe2O3

The focus of this study is on the Fe2O3-doped Bi0.5Na0.5TiO3-SrTiO3 piezoelectric material. This is important to find ecologically acceptable piezoelectric materials. This research aims to obtain a lead-free piezoelectric material because lead is a material that is not environmentally friendly. An alternative solution is a piezoelectric material based on BNT-ST, which in this case is doped with Fe2O3 material. The study of Fe2O3 doped Bi0.5Na0.5TiO3-SrTiO3 piezoelectric material prepared by the solid-state reaction method was carried out to determine the optimum composition of the material formed. Doping variations are 0; 2.5; 5; 7.5; and 10 in mol %. The examinations were performed using X-ray diffraction (XRD) spectroscopy, a Scanning Electron Microscope (SEM), and an LCR meter. The Fe2O3 doped Bi0.5Na0.5TiO3-SrTiO3 produced a new compound in the form of FeBi5Ti3O15-Na2Ti3O7-SrTiO3 with the crystal structure of cubic, orthorhombic, and monoclinic, as well as the increasing crystalline size with the addition of dopants, exclude at 5 mol % and 7.5 mol %. FeBi5Ti3O15-Na2Ti3O7-SrTiO3 also produces varying particle sizes, which are between 0.88–8.23 µm. From the obtained data, the optimum composition of Fe2O3 doped Bi0.5Na0.5TiO3-SrTiO3 was the 2.5 mol % of Fe2O3 due to it having the highest dielectric constant (er ) and temperature Curie (Tc ), and also the lowest material impedance (Z) with the er of 12.037 at Tc of 400 °C and Z of 135 kΩ. The high piezoelectricity, which is indicated by the high value of the dielectric constant and Curie temperature, is possible due to the presence of a greater number of sodium ions in the Na2Ti3O7 phase. Sodium ions are ions with good electrical storage capabilities. The increase in dielectric constant in the BNT-ST piezoelectric obtained by the addition of Fe2O3 shows that this material can be used as a substitute for lead-based piezoelectric materials so that it is secure for the environment. The piezoelectric material of BNT-ST doped with Fe2O3 earned from this research can be applied to obtain electricity with a optimal value when given mechanical pressure

Enhancement of Microwave Absorption Properties of Crystal‐Engineered Perovskite Oxide Using Cobalt Ferrite

A multiferroic composite that comprises of a non‐ferromagnetic ferroelectric material with a high dielectric constant and a non‐ferroelectric ferromagnetic material with a high magnetostriction is of tremendous interest as microwave absorption material due to its applicability in tunable microwave phase shifters, resonators, filters, absorbers, etc. In the previous work, the solid solution of strontium titanate and sodium bismuth titanate (Sr0.5(Na0.5Bi0.5)0.5TiO3, SNBT50), which is observed to possess a very high dielectric constant at room temperature (Ferroelectrics, Vol 583, 252–263 [2021]), is successfully reported. Thus, in this work, a core–shell magnetoelectric composite is prepared by coating highly ferromagnetic and magnetostrictive cobalt ferrite onto a diamagnetic but strongly ferroelectric SNBT50 to enhance its magnetic properties and to investigate the modification in microwave absorption. Detailed characterization of electric and magnetic parameters in microwave frequency range (1–20 GHz) reports substantial enhancement in the magnetic permeabilities as well as the magnetic loss of the composite system, as opposed to bare SNBT50. This results in improved impedance matching in the system and enhanced microwave absorption, with a minimum reflection loss (RL) of −20.19 dB and an increased effective absorption bandwidth of 4.56 GHz at a mere 2.7 mm absorber length. Consequently, in this investigation, a promising pathway is established for the development of multiferroic composites with favorable magnetoelectric coupling at room temperature that possesses wide absorption bandwidth and suitable RL, making them highly suitable for use in multiferroic‐based microwave components.

Solution-processed high-k photopatternable polymers for low-voltage electronics.

High dielectric constant (k) polymers have been widely explored for flexible, low-power-consumption electronic devices. In this work, solution-processable high-k polymers were designed and synthesized by ultraviolet (UV) triggered crosslinking at a low temperature (60 °C). The highly crosslinked network allows for high resistance to organic solvents and high breakdown strength over 2 MV cm-1. The UV-crosslinking capability of the polymers enables them to achieve a high-resolution pattern with a feature size down to 1 μm. Further investigation suggests that the polar cyano pendants in side chains are responsible for increasing the dielectric constant up to 10 in a large-area device array, thereby contributing to a low driving voltage of 5 V and high field-effect mobility exceeding 20 cm2 V-1 s-1 in indium gallium zinc oxide (IGZO) thin-film transistors (TFTs). In addition, the solution-processable high-k dielectric polymers were utilized to fabricate flexible low-voltage organic TFTs, which show highly reliable and reproducible mechanical stability at a bending radius of 5 mm after 1000 cycles. And also, the high radiation stability of the dielectric polymers was observed in a UV-sensitive TFT device, thereby achieving highly reproducible pattern recognition, which is promising for artificial optic nerve circuits.

KNN composite ceramics with superior pyroelectric performance for self-powered thermal detector

The thermal detector based on pyroelectric effect has attracted widespread attention due to its self-powering and rapid response. Although phase boundary engineered lead-free potassium sodium niobate [K0.5Na0.5NbO3, KNN] based ferroelectrics exhibit promising for pyroelectric sensor application, the high dielectric constants (εr) of these materials significantly constrain their pyroelectric figures of merit (FOMs), owing to the inverse correlation between FOMs and εr. To address this problem, we innovatively introduce perovskite bismuth sodium titanate [Bi0.5Na0.5TiO3, BNT] with low εr and high pyroelectric coefficient as the second phase to construct a KNN/BNT composite. The introduction of BNT can not only remain the high pyroelectric coefficient (p=7.12 × 10−4 C m−2 K−1) of KNN matrix, but also result in superior FOMs (Fv increased by 74 %), outperforming previous KNN-based pyroelectric ceramics. The excellent pyroelectric performance originates from the unique composite microstructure with compositional heterogeneity. That is, both the low εr BNT enriched phase and refined grain size as well as the promoted vibration of Nb–O octahedron contribute to the superior pyroelectric performance. A self-powered thermal detector with great thermal response has been developed, which also exhibits potential for detecting ultraviolet energy and infrared radiation.

Mechanisms for enhanced ferroelectric properties in ultra-thin Hf0.5Zr0.5O2 film under low-temperature, long-term annealing

To gain insight into the ferroelectric mechanisms under reduced thermal budget and thickness scaling, a 4.6 nm ultra-thin ferroelectric Hf0.5Zr0.5O2 capacitor compatible with back-end-of-line (BEOL) processes (all conducted at temperatures ≤350 °C) is investigated in this work. Through O3 pretreatment at the bottom electrode (BE) interface and controlled temperature modulation of the crystalline phase, the capacitor exhibits exceptional ferroelectric (FE) properties following low-temperature (350 °C) and long-term (300 s) rapid thermal annealing (RTA). These properties include high remanent polarization (2Pr ∼ 28.53 μC/cm2), low coercive voltage (Vc ∼ 0.43 V), effective leakage suppression, robust endurance (∼1010 cycles without hard breakdown), and a desirable high dielectric constant. The main mechanisms identified include tetragonal phase nucleation under enhanced tensile stress via the oxidized BE layer (TiO2), crystalline growth controlled through RTA temperature modulation, and phase transition to the ferroelectric orthorhombic phase under electric field cycling. This research provides valuable insights for the development of BEOL-compatible nonvolatile FE memories.

Controlled Fabrication of Native Ultra‐Thin Amorphous Gallium Oxide From 2D Gallium Sulfide for Emerging Electronic Applications

AbstractOxidation of 2D layered materials has proven advantageous in creating oxide/2D material heterostructures, opening the door for a new paradigm of low‐power electronic devices. Gallium (II) sulfide (β‐GaS), a hexagonal phase group III monochalcogenide, is a wide bandgap semiconductor with a bandgap exceeding 3 eV in single and few‐layer form. Its oxide, gallium oxide (Ga2O3), combines a large bandgap (4.4–5.3 eV) with a high dielectric constant (≈10). Despite the technological potential of both materials, controlled oxidation of atomically‐thin β‐GaS remains under‐explored. This study focuses on the controlled oxidation of β‐GaS using oxygen plasma treatment, addressing a significant gap in existing research. The results demonstrate the ability to form ultrathin native oxide (GaSxOy), 4 nm in thickness, upon exposure to 10 W of O2, resulting in a GaSxOy/GaS heterostructure where the GaS layer beneath remains intact. By integrating such structures between metal electrodes and applying electric stresses as voltage ramps or pulses, their use for resistive random‐access memory (ReRAM) is investigated. The ultrathin nature of the produced oxide enables low operation power with energy use as low as 0.22 nJ per operation while maintaining endurance and retention of 350 cycles and 104 s, respectively. These results show the significant potential of the oxidation‐based GaSxOy/GaS heterostructure for electronic applications and, in particular, low‐power memory devices.

Combining linear and cyclic sulfones as a strategy for elaborating more efficient high-dielectric polymer materials: A second case of dipolar glass copolymers

Motivated by the excellent features exhibited by sulfone functional groups in the development of high-dielectric polymer materials, this work assesses the combination of linear and cyclic sulfone structures through copolymerization to prepare novel polymer materials exhibiting high dielectric constants (ԑr'), low dissipative behavior, and improved thermal properties. Five new polymethacrylate-based copolymers with varying compositions were synthesized through reversible addition-fragmentation chain transfer (RAFT) polymerization. The correct structure and macromolecular nature of the devised materials were confirmed by infrared spectroscopy (FTIR), nuclear magnetic resonance spectroscopy (1H/13C NMR), and gel permeation chromatography (GPC), while their thermal properties were evaluated using thermogravimetry analysis (TGA) and differential scanning calorimetry (DSC). All specimens exhibited adequate thermal properties for most capacitor applications in terms of onset degradation (Ti) and glass transition (Tg) temperatures. All materials degraded well above 250 °C, with increased Ti and Tg values depending on the final composition of the cyclic sulfone monomer in the material. The incorporation of cyclic sulfones not only increased the thermal robustness of the specimens but also raised their Tg values to as high as 189 °C, notably expanding the range of temperatures where these systems can operate without dissipative phenomena. More importantly, broadband dielectric spectroscopy (BDS) revealed that all samples exhibited dielectric properties notably superior to those of conventional polymer materials, with high ԑr' values between 6.0 and 8.9 (at 25 °C and 1 Hz) and low loss factors (Tan(δ) < 0.018). Overall, the present work successfully demonstrates the advantages of including cyclic structures with high dipole moments in polymeric backbones, offering a new strategy to enhance the thermal and dielectric properties of high-dielectric polymer materials.

Indirect to direct band gap engineering of cubic bromide perovskite AlMgBr3 under pressure: First-principles calculations for enhanced optoelectronic applications

Through first principles, the structural, electronic, optical, mechanical, and thermodynamic properties of AlMgBr3 at different pressures are investigated for the first time. At 0 GPa, cubic AlMgBr3 is an indirect band gap insulator (Eg = 3.958 eV). Interestingly, its band gap type changes from an indirect band gap to a direct band gap at 5 GPa, making it a more favorable material for optoelectronic device applications. In addition, as the pressure increases, the conduction band electrons move downward, resulting in a reduction of the band gap, and the band gap transition from the ultraviolet to visible region. The optical properties show that AlMgBr3 has a high dielectric constant, refractive index, and conductivity, which is favorable for its application in solar cells, waveguides and other optoelectronic devices. The phase transition point of AlMgBr3 was determined to be 39.6 GPa based on the mechanical stability conditions, and the mechanical properties revealed the ductility, anisotropy and machinability of AlMgBr3. By using the quasi-harmonic Debye model, the effect of temperature and pressure on the bulk modulus, coefficient of thermal expansion, isobaric heat capacity, Debye temperature, and entropy were also calculated. It is worth mentioning that the electronic, optical, mechanical and thermodynamic properties of AlMgBr3 have been significantly enhanced under pressure.

Enhanced energy storage density and efficiency of nanocomposite dielectrics by modifying polymer matrix and aminated boron nitride nanosheet

Polymers and fillers with high dielectric constant (εr), charge-discharge efficiency (η) and breakdown strength (Eb) are fundamental to the development of nanocomposite dielectrics for superior energy storage capabilities. Herein, high-εr P(VDF-TrFE) is used to prepare the P(VDF-TrFE)-g-PMMA matrix with elevated εr and η, then the P(VDF-TrFE)-g-PMMA/BNNS-NH2 nanocomposites with uniformly oriented distribution of h-BN is obtained by a squeegee casting process using amino-boron nitride (BNNS-NH2) as fillers. Thanks to the limiting effect of PMMA and the high insulating effect of BNNS-NH2, the energy storage density (Ue) of the nanocomposite is up to 15.1 J/cm3 at 500 MV/m, which is 358 % and 182 % of the original P(VDF-TrFE). Furthermore, the η could reach to 72 %, being 184 % of neat polymer. These results demonstrate that the coordinated enhancement of Ue and η is critical for high performance energy storage, which provide scientific and technological support for the practicability of PVDF-based dielectrics.

Excited-State Dynamics of a Bright Fluorescent Dye with Precise Control of Emission Color Using Acid-Base Equilibrium, Intramolecular Charge Transfer, and Host-Guest Chemistry.

A fluorescent dye, a dithiophene-conjugated benzothiazole derivative (DTBz), was prepared to have high fluorescence emission quantum yields (ΦF) across various organic solvents. Its emission color modulation, from bright blue to deep red, was achieved through intramolecular charge transfer (ICT), acid-base equilibrium, and host-guest chemistry. Although it exhibits a weak solvatochromic effect, DTBz exhibited a bright fluorescence emission around 480 nm upon excitation at 390 nm in most solvents. In polar solvents, such as MeOH (methanol), EtOH (ethanol), DMF (N,N-dimethylforamide), and DMSO (dimethyl sulfoxide), an additional ICT emission band emerged around 640 nm, notably intense in DMSO, resulting in a bright greenish-white emission (ΦF = 0.67). The addition of 1,8-diazabicyclo[5,4.0]undec-7-ene (DBU) altered emission characteristics, reducing emission from the local excited (LE) state and enhancing ICT state emission. The degree of emission spectral change saturation with DBU addition varied with the solvent nature. Polar solvents with high dielectric constants, like DMSO and DMF, saw a complete disappearance of LE state emission with 5 equiv of DBU, resulting in a deep red emission (ΦFs of 0.53 and 0.48, respectively). Femtosecond transient absorption spectroscopy and time-resolved photoluminescence measurements elucidated the excited-state dynamics, revealing a long-lived excited state (τ-H = 10.3 ns) at a lower energy emission (640 nm), identified as DTBz-*, supported by transient absorption spectra analysis. Further analysis, including time-resolved fluorescence decay measurements and time-dependent density-functional theory (TD-DFT) calculations, underscored the role of deprotonation of DTBz's hydroxyl group in promoting the ICT process. The CIE coordination plot demonstrated wide linear emission color changes upon successive DBU additions in all solvents, while emission color precision was achieved through host-guest chemistry. Emission changes induced by DBU were reverted to the original state upon beta-cyclodextrin (β-CD) addition, with the 1H NMR study revealing the competition between acid-base equilibrium and host-guest complex formation as the cause of emission color change.

Remote vapor-phase dual alkali halide salts assisted quasi-van der Waals epitaxy of m-phase ZrO2 thin films with high dielectric constant and stable flexible properties

High-κ dielectric constant and wideband gap of ZrO2 material render it as an excellent candidate for transistor gate dielectric layers. However, current reported synthesis techniques suffer the problems of high precursor volatilization rate, ultrasmall grains with low dielectric constant, and high leakage current, which largely impede its application in electronic devices. Here, the quasi-van der Waals epitaxy growth of compact m-phase ZrO2 thin films has been developed, in which the stable supply of Zr source is realized by the tuned sublimation of ZrC powder with remote vapor-phase dual halide salts assistant. The formation of m-phase ZrO2 is due to the lower Gibbs free energy, in which the crystal nucleates at the etched hole edges of mica substrate, thus forming hexagonal shape polycrystal grains and merging as the continuous thin films. The microstructures and Raman spectrum characterization reveal the two dominated growth orientations and good crystal qualities, which indicate the uniform dielectric constant. The excellent growth reproducibility could be easily adapted to thin metal substrates, such as tungsten, molybdenum, and stainless steel, where the adhesion strength is strong because of the higher density of interfacial chemical bonding. Meanwhile, the metal–insulator–metal flexible capacitors show the high dielectric constant of 23–26 and low leakage current density of 10−4 A/cm2 at large voltage and only exhibit the decreased capacitance density of 7% after several hundred bending cycles. Our work paves a way to achieve the high-quality dielectric thin films on various substrates by the unique chemical vapor deposition design strategy.