High Breakdown Electric Field Research Articles

Pt/β-Ga2O3 Schottky devices enabling 60 Hz half-wave rectification for power-efficient pixel display

Beta-phase gallium oxide, β-Ga2O3, in transistors and diodes has been reported due to its distinctive electrical characteristics, such as wide bandgap, low leakage current, and high breakdown electric field. However, besides such conventional basic devices, more advanced device applications using β-Ga2O3 are always necessary. Here, we report on the dynamic behavior of Pt/β-Ga2O3-based Schottky diode for power-efficient organic light emitting display (OLED). Two Schottky diodes are back-to-back connected in series to form a half-wave rectifier circuit and finally integrated with an OLED diode pixel. When AC voltage is applied to the circuit at a frequency greater than 60 Hz, blinking of the OLED light is indistinguishable to human eyes. By way of the rectifier circuit, the OLED pixel efficiently saves more than 35% of the power that should be consumed by applying DC voltage.

Plasma Treatment Technologies for GaN Electronics

Nowadays, the third-generation semiconductor led by GaN has brought great changes to the semiconductor industry. Utilizing its characteristics of a wide bandgap, high breakdown Electric field, and high electron mobility, GaN material is widely applied in areas such as 5G communication and electric vehicles to improve energy conservation and reduce emissions. However, with the progress in the development of GaN electronics, surface and interface defects have become a main problem that limits the further promotion of their performance and stability, increasing leakage current and causing degradation in breakdown voltage. Thus, to reduce the damage, Plasma treatment technologies are introduced in the fabrication process of GaN electronics. Up to now, designs like the high-resistivity p-GaN cap Layer, passivating termination, and surface recovery process have been established via Plasma treatment, reaching the goals of normally-off transistors, diodes with high breakdown voltage and high-reliability GaN electronics, etc. In this article, hydrogen, fluorine, oxygen, and nitrogen Plasma treatment technologies will be discussed, and their application in GaN electronics will be reviewed and compared.

Achieving an appropriate polarization-breakdown synergy of multilayer films for dielectric energy storage through temperature gradient annealing

Large polarization and high breakdown strength are the key to achieving an idea energy storage density in dielectric capacitors, but unfortunately the trade-off problem between them is difficult to evade, particularly for those dielectrics with different crystalline degrees. Herein, we propose an appropriate polarization-breakdown synergistic strategy of dielectric multilayer films through temperature gradient annealing. The dielectric properties of a serials of (Pb, La)(Zr, Ti)O3/SrTiO3/(Pb, La)(Zr, Ti)O3 (PLZT/STO/PLZT) structures with different annealing temperature for each layer are compared. The optimum recoverable energy density of 57.9 J/cm3 is achieved at a high breakdown electric field of 5.78 MV/cm and a moderate maximum polarization of 22.5 μC/cm2. In addition to the role of suppressing the carriers transport of interlayer STO, the balance between polarization and breakdown strength in bottom and top PLZT layers with individual dielectric characteristics should be responsible for the enhanced energy storage performance (ESP). The results suggest that it is a feasible way to optimize the ESP of dielectric multilayer films through designing different stacking layer via temperature gradient annealing heat treatment.

Demonstration of irradiation-resistant 4H-SiC based photoelectrochemical water splitting

4H silicon carbide (4H-SiC) has gained a great success in high-power electronics, owing to its advantages of wide bandgap, high breakdown electric field strength, high carrier mobility, and high thermal conductivity. Considering the high carrier mobility and high stability of 4H-SiC, 4H-SiC has great potential in the field of photoelectrochemical (PEC) water splitting. In this work, we demonstrate the irradiation-resistant PEC water splitting based on nanoporous 4H-SiC arrays. A new two-step anodizing approach is adopted to prepare 4H-SiC nanoporous arrays with different porosity, that is, a constant low-voltage etching followed by a pulsed high-voltage etching. The constant-voltage etching and pulsed-voltage etching are adopted to control the diameter of the nanopores and the depth of the nanoporous arrays, respectively. It is found that the nanoporous arrays with medium porosity has the highest PEC current, because of the enhanced light absorption and the optimized transportation of charge carriers along the walls of the nanoporous arrays. The performance of the PEC water splitting of the nanoporous arrays is stable after the electron irradiation with the dose of 800 and 1600 kGy, which indicates that 4H-SiC nanoporous arrays has great potential in the PEC water splitting under harsh environments.

Enhanced Energy Storage Properties of Four-Layer Composite Films via Strategic Macrointerface Modulation.

Dielectric capacitors play a crucial role in the field of energy storage; however, the low discharged energy density (Ue) of existing commercial dielectrics limits their future applications. Currently, further improvement in the Ue of dielectrics is constrained by the challenge of simultaneously achieving high permittivity (εr) and high breakdown electric field strength (Eb). To address this issue, we designed a series of four-layer poly(vinylidene fluoride) (PVDF)-based composite films comprising three functional layers: a sodium bismuth titanate (NBT) plus PVDF composite (NBT&PVDF) layer to achieve high εr values and a pure PVDF layer and a boron nitride (BN) plus PVDF composite (BN&PVDF) layer to achieve high Eb values. This design synergistically enhanced the εr and Eb values of the composite films by exploiting low-loss macrointerface polarization via adjustment of the functional layer stacking order, as supported by simulation analyses. Ultimately, the composite film with a topmost layer of pure PVDF, followed by an NBT&PVDF layer, another pure PVDF layer, and a BN&PVDF layer achieved an enhanced Ue value of 26.42 J·cm-3 and excellent efficiency of 80.03% at an ultrahigh Eb value of 770 MV·m-1. This approach offers an innovative pathway for developing advanced energy storage composite dielectrics via macrointerface manipulation.

First demonstration of Sn diffusion into gallium oxide from poly-tetraallyl tin deposited by initiated chemical vapor deposition by thermal treatment

Gallium oxide (Ga2O3) is attracting attention as a next-generation semiconductor material for power device because it has a wide energy band gap and high breakdown electric field. We deposited a Sn polymer, poly-tetraallyl tin, on Ga2O3samples using a disclosed initiated chemical vapor deposition (iCVD) process. The Sn dopant of the Sn polymer layer is injected into the Ga2O3through a heat treatment process. Diffusion model of Sn into the Ga2O3is proposed through secondary ion mass spectroscopy analysis and bond dissociation energy. The fabricated device exhibited typical n-type field-effect transistor (FET) behavior. Ga2O3Sn-doping technology using iCVD will be applied to 3D structures and trench structures in the future, opening up many possibilities in the Ga2O3-based power semiconductor device manufacturing process.

Epitaxial Growth and Doping of N-Polar AlN by Plasma-Assisted Molecular Beam Epitaxy

In recent years, AlN has garnered significant attention in the research community due to its excellent electronic properties. AlN, which is an ultra-wide bandgap material with a direct band gap of 6.2 eV, has a high breakdown electric field (12 MV/cm) and high thermal conductivity. In addition, band engineering can be achieved by alloying AlN with Gallium (Ga), Indium (In), and Scandium (Sc), and two-dimensional electron gas (2DEG) is formed at the AlGaN/AlN interface due to strong piezoelectric and spontaneous polarization. Furthermore, AlN has high-temperature stability, which is suitable for application in harsh environments. Due to these unique properties, AlN has gained attention as a promising candidate for the next generation of high power electronic and optoelectronic applications.In this talk, we present the demonstration of controllable Si doping in N-polar AlN films grown on single crystal AlN substrates by plasma assisted molecular beam epitaxy (PAMBE). Through optimization of growth conditions, we obtained high quality N-polar AlN films at high temperatures. However, our studies revealed that Si incorporation dramatically decreases at such high growth temperature. To enable higher Si incorporation, a hybrid growth scheme was developed, using a combination of low-temperature and high-temperature growth condition and by using Ga as a surfactant at low growth temperature. By lowering the growth temperature of AlN to 750°C, we were able to incorporate Si with concentrations as high as 2x1020 cm-3 and demonstrated an electron concentration as high as 1.25x1019 cm-3 at room temperature.

Low Frequency Electronic Noise Characterization of Au-W/β-Ga2O3 Schottky Diodes

Ultra-wide bandgap (UWBG) semiconductors have attracted tremendous amount of interest for applications in high-power electronics and solar-blind UV photodetectors. In particular, β-Ga2O3 has attracted significant research attention in recent years due to its promising electrical and optical characteristics including a large bandgap, high breakdown electrical field, and large Baliga’s figure of merit compared to well-established wide-bandgap technologies such as GaN and SiC [1].Low frequency electronic noise, which is present in all electronic devices, can be used as a diagnostic tool for semiconductor material and device characterization. By studying the low frequency noise in semiconductor materials and devices, the physics associated with the noise properties of bulk and interface defects and traps can be investigated [2]. Measurement of low frequency noise is also crucial for evaluating material quality and device reliability.In this work, we investigate the forward-bias diode parameters and low-frequency electronic noise in Au-W/β-Ga2O3 Schottky barrier diodes. The Schottky contact is formed by depositing 20 nm of Tungsten (W) using dc sputtering followed by 340 nm of Gold (Au) using e-beam evaporation, and subsequent annealing [3].We first measure the I-V characteristics and extract important diode parameters, such as the Schottky barrier height, ideality factor, and series resistance from room temperature forward-bias current-voltage characteristics. The extracted Schottky barrier height for these devices is in the range 0.7-0.8 eV and the ideality factor is approximately 1.2.We next measure the low-frequency electronic noise in Au-W/β-Ga2O3 Schottky diodes at different forward bias voltages at room temperature. We find that the current noise spectral density exhibits 1/f-type behavior for all forward bias voltages at low frequency with an exponent ranging from 0.75 to 1.15, indicating that the low frequency noise of these devices is dominated by excess (flicker) noise. No Lorentzian-shaped generation-recombination (G-R) noise is observed. At low frequencies, the shot noise contribution is found to be negligible for the values of the current in our devices, and the total noise is 1/f-limited.We also investigate the dependence of the current noise spectral density on forward bias current, revealing different relationships in different current regimes. At low currents, the noise spectral density is found to scale approximately as the square of current, whereas at high currents, the noise spectral density begins to saturate. Such noise behavior can be attributed to different noise sources dominating in different current regimes. Furthermore, using the noise figure of merit adapted for ultra-wide bandgap semiconductor devices [4], we find that the Au-W/β-Ga2O3 devices have lower noise levels compared to other emerging UWBG materials and similar noise levels as well-established technologies such as GaN.These results provide important insights into the electronic noise properties of Au-W/β-Ga2O3 Schottky diodes and show that low frequency noise characterization is an important diagnostic tool for assessing the quality and reliability of gallium oxide based wide-bandgap materials and device technologies.

A low-cost and convenient route of fabricating GaN films with P-type mixed microcrystalline and amorphous structure deposited via Ga target of magnetron sputtering

GaN, a third-generation semiconductor, has gained widespread attention owing to its high temperature resistance, wide bandgap, and high critical breakdown electric fields. Magnetron sputtering has a broad potential in the field of low-cost growth of GaN on account of high efficiency, superior quality, and convenient operation. However, challenges caused from the pure Ga targets with a huge refrigeration system need to be resolved for wide practices. Here, a new and cost-effective Ga target for magnetron sputtering was fabricated by utilizing the wetting properties of CuGa2 and Ga. Mixed microcrystalline and amorphous GaN films were obtained via reactive magnetron sputtering employing the Ga target. The average deposition rate is about 1.68 nm/min, and the average roughness is ∼7.45 ± 0.26 nm under 100 W of sputtering power. In addition, the sputtered GaN films were found to be wide-bandgap and p-type semiconductors with high transmittance, as revealed by x-ray photoelectron spectroscopy and absorption spectra. The GaN films display a bandgap of ∼3.60 eV and a transmittance exceeding 88.5% in the visible range. Furthermore, field-effect transistors and metal–semiconductor–metal photodetectors have been fabricated using the obtained GaN films, demonstrating favorable response characteristics. The prospects of microcrystalline/amorphous GaN films in sensing, power devices, and flexible electronics were forecasted. Overall, a low-cost and pervasive route of target fabrication process expands the possibilities of using low melting point metals in magnetron sputtering.

A Review of Diamond Materials and Applications in Power Semiconductor Devices.

Diamond is known as the ultimate semiconductor material for electric devices with excellent properties such as an ultra-wide bandgap (5.47 eV), high carrier mobility (electron mobility 4000 cm2/V·s, hole mobility 3800 cm2/V·s), high critical breakdown electric field (20 MV/cm), and high thermal conductivity (22 W/cm·K), showing good prospects in high-power applications. The lack of n-type diamonds limits the development of bipolar devices; most of the research focuses on p-type Schottky barrier diodes (SBDs) and unipolar field-effect transistors (FETs) based on terminal technology. In recent years, breakthroughs have been made through the introduction of new structures, dielectric materials, heterogeneous epitaxy, etc. Currently, diamond devices have shown promising applications in high-power applications, with a BV of 10 kV, a BFOM of 874.6 MW/cm2, and a current density of 60 kA/cm2 already realized. This review summarizes the research progress of diamond materials, devices, and specific applications, with a particular focus on the development of SBDs and FETs and their use in high-power applications, aiming to provide researchers with the relevant intuitive parametric comparisons. Finally, the paper provides an outlook on the parameters and development directions of diamond power devices.

The influence of Sm[formula omitted]O[formula omitted] nanoparticles adding on some superconducting properties of Bi[formula omitted]Pb[formula omitted]Sr[formula omitted]Ca[formula omitted]Cu[formula omitted]O[formula omitted] ceramics

High-Temperature Superconductors Bi1.6Pb0.4Sr2Ca2Cu3O10+δ samples doped with Sm2O3 nanoparticles in different quantities (0.00, 0.02, 0.04 and 0.06), were synthesised. Solid state feedback technique was used to prepare the samples and then characterised. The morphology and structure of the specimens were deployed by scanning electron microscopy (SEM) and X-ray diffraction (XRD) examination. The spectroscopy of the energy dispersive X-ray (EDX) experiment was utilised to obtain the elemental composition of the samples. Resistivity versus temperature measurement in DC mode was employed to estimate the critical transition temperature of each sample. XRD with the Rietveld refinement process revealed that Bi2223 and Bi2212 stages exist mutually in specimens with orthorhombic crystal systems. The lowest percentage of volume fraction associated with the Bi2223 phase belonged to the sample with x=0.06 nanoparticle samarium doped. It was detected that with rising samarium content the volume division of the Bi2223 phase decreases but the Bi2212 stage increases compared with the pristine specimen. SEM showed that the shrinkage of grain size occurs when the amount of nano-sized Sm was added to x=0.02 sample with lower inter-coupling among superconducting granules. This effect might be verified by SEM and TEM images. EDX exhibited some peaks related to Sm and other elements of the Bi2223 structure. These patterns confirm that all elements associated with the compounds were introduced into the Bi2223 matrix. The critical temperatures such as Tconset, TcPeak and Tczero decreased for Sm doped samples compared with the pure sample. Adding Sm2O3 nanoparticles causes rising calculated density and hole carrier concentration. These outcomes can be interpreted as the allocation of additional positive charges to the CuO2 planes. It is worth mentioning that the superb properties such as high-Tc, high Jc, strong flux pinning, and good thermal stability, for Bi2223 and high breakdown electric field, high dielectric constant, and large bandgap for Sm2O3 are the issues to motivate the author to dope Bi2223 with Sm2O3 NPs. In brief, the electrical, mechanical and structural properties of Sm2O3 NPs doped Bi2223 play the main role in the applications, which drive the investigations to emphasise the synthesis of superconducting samples.

High energy-storage properties of Sr0.7Bi0.2-xLaxTiO3 lead-free relaxor ferroelectric ceramics for pulsed power capacitors

Ceramic capacitors are very promising to be commercialize with ease for high pulse power technology owing to their fast charging/discharging rate, high bending strength and as well as their high energy density. Small, fine, and compacted grains in conjunction with slim P-E loops, and high breakdown electric field strength (Eb) play crucial role in the improvement of recoverable energy storage density. In this work, the microstructure and electrical properties of La2O3 modified Sr0.7Bi0.2-xLaxTiO3 ceramics (SBLTO, x = 0, 0.01, 0.02, and 0.05, and short for SBTO, SBLTO-0.01, SBLTO-0.02, and SBLTO-0.05, respectively) were investigated in details. Furthermore, introducing La2O3 into SBTO ceramics not only refined grains and increased insulation resistance, but also resulted in significantly better energy-storage characteristics, as compared with the pure SBTO ceramics. Recoverable energy-storage density (Wrec) was obtained up to 5.8 J/cm3 in SBLTO-0.01 lead-free ceramic, which is better than that of other reported SBTO-based ceramics. Moreover, the Wrec of the SBLTO-0.01 ceramic also presents good frequency (2–500 Hz) and thermal (25–120 °C) stabilities under an electric field strength of 150 kV/cm. Furthermore, the charge-discharge results demonstrated a high power density∼92 MW/cm3 and a short discharging speed time∼39 ns. As a result, our work offers SBTO-based ceramics with a feasible method for enhancing the energy-storage characteristic.

Energy Storage Performance of (Na0.5Bi0.5)TiO3 Relaxor Ferroelectric Film

The (Na0.5Bi0.5)TiO3 relaxor ferroelectric materials have great potential in high energy storage capacitors due to their small hysteresis, low remanent polarization and high breakdown electric field. In this work, (Na0.5Bi0.5)TiO3 thin films with ~400 nm were prepared on (001) SrTiO3 substrate by pulsed laser deposition technology. The (Na0.5Bi0.5)TiO3 films have good crystallization quality with a dense microstructure and relaxor ferroelectric properties, as confirmed by the elongated hysteresis loops and the relation of <A>∝Eα. A high Eb of up to 1400 kV/cm is obtained, which contributes to a good Wrec of 24.6 J/cm3 and η of 72% in (Na0.5Bi0.5)TiO3 film. In addition, the variations of Wrec and η are less than 4% and 10% in the temperature range of 20–120°C. In the frequency range of 103 Hz–2 × 104 Hz, the variations of Wrec and η are less than 10%. All those reveal the great potential of NBT film for energy storage.

Advancing anti-corrosion performance of composite coating: Self-aligned fluorinated graphene for multifunctional electronic packaging

Fluorinated graphene (FG) is considered an ideal filler for polymer nanocomposites to enhance anti-corrosion performance due to its hydrophobicity and electrical insulation properties. A key objective in advanced anti-corrosion design is to create a structure where FG sheets are stacked and aligned, forming an ultra-long, circuitous path to impede the diffusion of active corrosion species. Additionally, integrating aligned FG sheets with polymers prevents the formation of electrical percolation paths, making the coating suitable for electronic passivation. However, achieving a high degree of alignment of FG within the polymer matrix has been a challenge. In this study, we employ a straightforward electrophoretic deposition method to align FG sheets in a polyurethane (PU) matrix for anti-corrosion coatings on copper. The optimized coating exhibits outstanding corrosion resistance for copper, with a stable corrosion rate of 4.0 × 10−3 μm/year in a 3.5 wt% NaCl solution. Moreover, the FG composite coating significantly enhances thermal conductivity, increasing it by 97 % compared to pristine PU, while also providing high electrical resistance. This results in a high breakdown electric field of 28 kV/cm and an extremely low current density of 1.32 × 10−8 A/cm2, which is advantageous for electronic packaging. This multifunctional coating meets industrial standards for large-scale production, uniformity, and controllable thickness, offering a promising approach to improving anti-corrosion protective coatings.

Atomic layer deposition of Y2O3 as high-k dielectrics by using a heteroleptic yttrium precursor and water

Atomic layer deposition (ALD) of Y2O3 thin films was performed on Si substrate by pulsing an unconventional heteroleptic yttrium precursor Y(MeCp)2(Me2Pz) and H2O alternatively. The thin film grew 0.26–0.28 Å per cycle at relatively low temperature of 195–225 °C in a self-limiting manner with negligible nucleation delay, and is close to stoichiometric (O/Y = 1.48, C, 2.56 at%; N, 1.81 at%) in as-deposited form. Integration of the post-annealed ALD Y2O3 film in a metal oxide semiconductor (MOS) capacitor structure exhibits representative electrical properties including a high dielectric constant k of 11.4, high electrical breakdown field of 6.1 MV cm−1 and low leakage current density of 9.1 × 10−8 A cm−2 at − 2 MV cm−1.

High Energy Density in All-Organic Polyimide-Based Composite Film by Doping of Polyvinylidene Fluoride-Based Relaxor Ferroelectrics.

Recently, due to the advantages of superior compatibility, fewer interface defects, and a high electric breakdown field, all-organic dielectric composites have attracted significant research interest. In this investigation, we produced all-organic P(VDF-TrFE-CFE) terpolymer/PI (terp/PI) composite films by incorporating a small amount of terpolymer into PI substrates for high energy density capacitor applications. The resulting terp/PI-5 (5% terpolymer) composite films exhibit a permittivity of 3.81 at 1 kHz, which is 18.7% greater than that of pristine PI (3.21). Furthermore, the terp/PI-5 film exhibited the highest energy density (9.67 J/cm3) and a relatively high charge-discharge efficiency (84.7%) among the terp/PI composite films. The energy density of the terp/PI-5 film was increased by 59.8% compared to that of the pristine PI film. The TSDC results and band structure analysis revealed the presence of deeper traps in the terp/PI composites, contributing to the suppression of leakage current and improved charge-discharge efficiency. Furthermore, durability tests confirm the stability of the composite films under extended high-temperature exposure and cycling, establishing their viability for practical applications.

Ultrahigh breakdown strength of NaNbO3‐based dielectric ceramics for high‐voltage capacitor application

AbstractDielectric ceramics have attracted significant attention in power electronic systems, owing to their exceptional charging and discharging speeds, as well as their high power density. However, simultaneously achieving a high recoverable energy density (Wrec) and high efficiency (η) in high‐voltage dielectric ceramics remains a challenge for applications where a high breakdown electric field (Eb) is required. In this study, high‐quality (1 – x)NaNbO3–xSr0.7Bi0.2(Mg1/3Nb2/3)O3 [(1 – x)NN–xSBMN] ceramics were prepared based on an optimization strategy combining phase structure with microstructural regulation. A quasilinear P–E loop with negligible hysteresis was realized in the ceramic with x = 0.4, excellent Wrec of 5.61 J/cm3, and high η of 85.1% obtained at a largely improved Eb of 710 kV/cm. To the best of our knowledge, the Eb of 710 kV/cm is one of the highest values achieved in dielectric ceramics to date. The noticeable reduction in grain size (∼0.95 µm) and increased bandgap improve the Eb to an ultra‐high level, which is a crucial factor in high energy storage density. The coexistence of a few antiferroelectric phases and the dominant paraelectric phase is the structural origin of the comprehensive energy‐storage performance improvement. Therefore, our research develops a unique approach to unleash the potential in NaNbO3‐based ceramics, holding great promise for application in high‐voltage dielectric capacitors.

Remarkable energy-storage density together with efficiency of above 92% in high-entropy ferroelectric ceramics

Recently, the use of “entropy engineering” to form high-entropy ceramic dielectric materials is considered to be an effective means to break through the traditional doping which modified local structures. However, the low energy storage efficiency (η) of most high-entropy ceramics cannot match their excellent energy storage density (Wrec). This work is the first to combine scheelite structure (SmTaO4) with high-entropy perovskite structure ((NaBiBaSrCa)0.2TiO3). On the one hand, the superposition of multiple structures makes the inherent lattice distortion and sluggish diffusion of high-entropy materials more obvious, thus playing a role in refining grains, reducing leakage current density, and obtaining a high breakdown electric field (Eb). On the other hand, the introduction of donor elements inhibits the generation and migration of oxygen vacancies, reducing losses to improve η and Eb. Ultimately, the goal of obtaining a remarkable Wrec (5.6 J/cm3) and η (92.2%) at 445 kV/cm was successfully achieved. This work offers a practical approach to attain superior overall performances in high-entropy ceramics.

Interface-engineering-enhanced energy storage performance of (Na0.8K0.2)0.5Bi4.5Ti4O15/Bi4LaTi3.5Mg0.5O15 multilayer film capacitors

Dielectric capacitors are vital components in advanced electrical power systems due to their high power density. However, how to improve their comparatively low energy density is still a major challenge. In this work, we designed a dielectric capacitor with a multilayer structure by inserting different numbers of ferroelectric (Na0.8K0.2)0.5Bi4.5Ti4O15 (NKBT) layers into relaxor ferroelectric Bi4LaTi3.5Mg0.5O15 (BLTM). Through the regulation of interface engineering, that is, the joint effects of electrical field amplifying, interlayer coupling, and block layer at the interface, enhancing the energy storage density and breakdown field in (NKBT/BLTM)N capacitors. A giant energy density (Wrec) of 81.2 J/cm3 and a high breakdown electric field of 4074 kV/cm are achieved in capacitors with N = 4. Consequently, interface engineering can be promoted as a universal route to optimize the energy storage performance of dielectric capacitors.

Facile synthesis of β-Ga2O3 based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides

Gallium oxide (Ga2O3) is a promising wide bandgap semiconductor that is viewed as a contender for the next generation of high-power electronics due to its high theoretical breakdown electric field and large Baliga’s figure of merit. Here, we report a facile route of synthesizing β-Ga2O3 via direct oxidation conversion using solution-processed two-dimensional (2D) GaS semiconducting nanomaterial. Higher order of crystallinity in x-ray diffraction patterns and full surface coverage formation in scanning electron microscopy images after annealing were achieved. A direct and wide bandgap of 5 eV was calculated, and the synthesized β-Ga2O3 was fabricated as thin film transistors (TFT). The β-Ga2O3 TFT fabricated exhibits remarkable electron mobility (1.28 cm2 Vs−1) and a good current ratio (I on/I off) of 2.06 × 105. To further boost the electrical performance and solve the structural imperfections resulting from the exfoliation process of the 2D nanoflakes, we also introduced and doped graphene in β-Ga2O3 TFT devices, increasing the electrical device mobility by ∼8-fold and thereby promoting percolation pathways for the charge transport. We found that electron mobility and conductivity increase directly with the graphene doping concentration. From these results, it can be proved that the β-Ga2O3 networks have excellent carrier transport properties. The facile and convenient synthesis method successfully developed in this paper makes an outstanding contribution to applying 2D oxide materials in different and emerging optoelectronic applications.