Gold (Au) thin films were deposited over the HgCdTe (mercury cadmium telluride) surface by a thermal-evaporation deposition technique. The thermally grown Au films were investigated using different characterization techniques, X-ray diffraction (XRD), energy dispersive X-ray (EDX) analysis, atomic force microscopy (AFM), scanning electron microscopy (SEM), and current-voltage (I–V)/resistance measurement. The maximum film growth occurs along with the preferred orientation (111). The grown Au film possesses a cubic fcc structure, desired elemental compositions, and purity. The AFM confirms that the films were uniform, dense, and had very low roughness. The films attained the desired grain size of film-forming particles. The optimized Au films were established and further employed to fabricate the transfer length method (TLM) structure with configuration (Au/p-HgCdTe). The I–V and resistance measurements of the as-deposited TLM structure produced the Ohmic Au-contact with low specific contact resistance (ρc) of 2.73 × 10−3 Ω cm2. Annealing treatment (contacts annealed for 2 h at 80 °C in the air) was applied to the as-deposited TLM structure and the measured value of specific contact resistance (ρc) for the annealed Au contact (Ohmic behaviour) is 7.11 × 10−4 Ω cm2 that is relatively low than the as-deposited contacts. Thermal annealing has reduced the magnitude of ρc by about one order. TLM structures (as-deposited and annealed) exposed the efficiency of Au thin films as an effective Ohmic contact. Thus, Au thin films could be used to create a compelling and appropriate Ohmic p-contact to fabricate HgCdTe infrared detectors.