Abstract
The metal/HgCdTe interfaces formed by evaporating Ag and Al onto cleaved HgCdTe substrates held at 170 K in ultrahigh vacuum (p<1×10−10 Torr) exhibit greatly reduced intermixing between the metal and substrate to the extent, in the case of the Ag/HgCdTe interface, that no detectable intermixing occurs. The incremental metal depositions used in this study ranged from tenths of monolayers at submonolayer coverages to several monolayers at thicker coverages. The evolution of these interfaces was investigated using the surface sensitive techniques of photoemission spectroscopy and low‐energy electron diffraction. In addition to the reduced intermixing, unusual band bending behavior in the semiconductor at very low metal coverages is observed for these interfaces formed at low temperature. In the low‐coverage regime (<5 monolayers), the bands are seen to bend from the position after metal deposition back towards the initial cleaved position after time for the Ag case and after exposure to x rays in the Al case...
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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