Hexagonal Boron Nitride Substrate Research Articles

Strongly correlated Chern insulators in magic-angle twisted bilayer graphene.

Interactions between electrons and the topology of their energy bands can create unusual quantum phases of matter. Most topological electronic phases appear in systems with weak electron-electron interactions. The instances in which topological phases emerge only as a result of strong interactions are rare and mostly limited to those realized in intense magnetic fields1. The discovery of flat electronic bands with topological character in magic-angle twisted bilayer graphene (MATBG) has created a unique opportunity to search for strongly correlated topological phases2-9. Here we introduce a local spectroscopic technique using a scanning tunnelling microscope to detect a sequence of topological insulators in MATBG with Chern numbers C=±1, ±2 and ±3, which form near filling factors of±3, ±2 and ±1 electrons per moiré unit cell, respectively, and are stabilized by modest magnetic fields. One of the phases detected here (C=+1) was previously observed when the sublattice symmetry of MATBG was intentionally broken by a hexagonal boron nitride substrate, with interactions having a secondary role9. We demonstrate that strong electron-electron interactions alone can produce not only the previously observed phase, but also other unexpected Chern insulating phases in MATBG. The full sequence of phases that we observe can be understood by postulating that strong correlations favour breaking time-reversal symmetry to form Chern insulators that are stabilized by weak magnetic fields. Our findings illustrate that many-body correlations can create topological phases in moiré systems beyond those anticipated from weakly interacting models.

A fresh-bias photoresponse of graphene field-effect transistor: An electrical tunable fast dipole moment generation

A unique extra photoresponse of graphene field-effect transistor to the first laser pulse after a switch of back-gate voltage (VBG) is reported and explored here. It is referred as fresh-bias photoresponse (FBPR). FBPR suggests a unique prompt charge transfer process triggered by laser illumination with the help of the VBG and the transferred charge holds as far as the VBG holds unchanged. The responsible charge transfer process is proposed between ester oxygen and carbonyl carbon atoms in the ester side chains of poly(methyl methacrylate) (PMMA) molecule. The proposed mechanism explains perfectly all of the features of FBPR. The charge transfer process generates an inter-molecular dipole moment of PMMA. Such dipole moment generation is much fast than that introduced by a photo-triggered isomerization reaction of photochromic molecule, which have been used in graphene based photodetectors. This mechanism is further confirmed by the test result of a control device with mechanically exfoliated graphene channel and a control device fabricated on hexagonal boron nitride substrate. The mechanism behind FBPR may provide a new way of developing phototransistors, photodetectors or photoelectronic memory devices in the future.

On the Impact of Substrate Uniform Mechanical Tension on the Graphene Electronic Structure

Employing density functional theory calculations, we obtain the possibility of fine-tuning the bandgap in graphene deposited on the hexagonal boron nitride and graphitic carbon nitride substrates. We found that the graphene sheet located on these substrates possesses the semiconducting gap, and uniform biaxial mechanical deformation could provide its smooth fitting. Moreover, mechanical tension offers the ability to control the Dirac velocity in deposited graphene. We analyze the resonant scattering of charge carriers in states with zero total angular momentum using the effective two-dimensional radial Dirac equation. In particular, the dependence of the critical impurity charge on the uniform deformation of graphene on the boron nitride substrate is shown. It turned out that, under uniform stretching/compression, the critical charge decreases/increases monotonically. The elastic scattering phases of a hole by a supercritical impurity are calculated. It is found that the model of a uniform charge distribution over the small radius sphere gives sharper resonance when compared to the case of the ball of the same radius. Overall, resonant scattering by the impurity with the nearly critical charge is similar to the scattering by the potential with a low-permeable barrier in nonrelativistic quantum theory.

Quantum Hall spin liquids and their possible realization in moiré systems

Recently, Chern insulators with Chern numbers $C=1$ and 2 in zero (or very small) magnetic field have been observed in two moire graphene systems: twisted bilayer graphene and ABC trilayer graphene, both aligned with a hexagonal boron-nitride (h-BN) substrate. These Chern insulator states arise due to many-body effects in the Chern bands of these systems when they are partially filled to a total integer filling ${\ensuremath{\nu}}_{T}=1,3$ (including spin and valley degrees of freedom). A simple possible explanation is from Hartree-Fock mean-field theory which predicts valley and spin polarization in the zero bandwidth limit, similar to the ``quantum Hall ferromagnetism'' in Landau levels. Though valley polarization is implied by the existing experiments, the fate of the spin degree of freedom is not presently clear. In this paper, we propose alternative valley polarized---but not spin polarized---candidates for the observed QAH effect. For a valley polarized spinful Chern band at filling ${\ensuremath{\nu}}_{T}=1$, we describe a class of exotic Chern insulator phases through spin-charge separation: charge is in a conventional Chern insulator phase with quantized Hall conductivity, while the spin forms disordered spin liquid phase with fractionalization, which we dub quantum Hall spin liquids. We construct a simple class of ${Z}_{2}$ quantum Hall spin liquid as analogs of the familiar ${Z}_{2}$ spin liquid through slave fermion-Schwinger boson parton theory. Condensation of the spinon from the ${Z}_{2}$ quantum Hall spin liquid can lead to a quantum Hall antiferromagnet which is yet another, less exotic, candidate for the experimentally observed Chern insulator. We offer several experimental proposals to probe the quantum Hall spin liquid and the quantum Hall antiferromagnetic phases. We briefly comment on the generalization to the filling ${\ensuremath{\nu}}_{T}=2$ and propose possible quantum valley Hall spin liquid without full spin polarization. Finally, we also propose another class of QHSL using fermionic spinons, including phases supporting non-Abelian anyons.

1/f Noise in epitaxial sidewall graphene nanoribbons

We perform gate- and temperature-dependent low-frequency noise measurements on epitaxial graphene nanoribbons (epiGNRs) grown on the sidewalls of trenches etched in SiC substrates. We find that the measured noise spectra are dominated by 1/f noise, and the main source of the noise at high carrier densities is the long-range scatters (charge traps) at the epiGNR/gate-dielectric interface. Interestingly, our findings differentiate sidewall epiGNRs from previously studied lithographically patterned GNRs while exhibiting competitive noise characteristics similar to those in high-quality suspended graphene or graphene on hexagonal boron nitride substrates. These results provide confidence in potential epiGNR-based device applications in low-noise nanoelectronics.

Single digit parts-per-billion NOx detection using MoS2/hBN transistors

2D materials offer excellent possibilities for high performance gas detection due to their high surface-to-volume ratio, high surface activities, tunable electronic properties and dramatic change in resistivity upon molecular adsorption. This paper demonstrates a simple field effect transistor (FET) of molybdenum disulphide (MoS2) fabricated on a hexagonal boron nitride (hBN) substrate that can detect NOx down to concentrations of 6 ppb and possibly far below at room temperature (RT) with a systematic optimization of the device design and fabrication parameters as well as the device operating conditions. The effects of the substrate, number of MoS2 layers, channel layout and biasing conditions on the response of MoS2 FETs to NOx were investigated, providing directions for maximizing the sensitivity. This work also sheds light the issues of recovery and stability and present a methodology for calibration of the sensors which is critical for repeatable and reliable measurements.

Landscape of Charge Puddles in Graphene Nanoribbons on Hexagonal Boron Nitride

Recently, graphene nanoribbons (GNRs) on hexagonal boron nitride (h‐BN) substrates have been studied to develop high‐mobility devices or devices based on a 1D Moiré superlattice. For this purpose, a device‐level understanding of the charge‐puddle landscape of a GNR/h‐BN structure is needed when the charge puddles function as scattering sources for mobile charge carriers. Here, a puddle landscape is constructed on the basis of an analysis of the temperature dependencies of the conductance of GNR/h‐BN devices at various gate‐voltage values. For low‐, intermediate‐, and high‐temperature regions near the charge‐neutral point (CNP), the puddle size (50–200 nm), distance between neighboring puddles (40–170 nm), and potential depth of the puddles (in a range of 10 meV) in ∼100 nm wide GNR/h‐BN devices are obtained on the basis of Coulomb blockade, 1D variable‐range hopping, and thermally activated hopping, respectively. Based on the constructed puddle landscape, it is also concluded that the confinement‐gap energy for an ∼100 nm wide GNR is similar to that of the thermal activation energy near the CNP in the GNRs. The constructed puddle landscape for GNR/h‐BN devices is consistent with that obtained from scanning tunneling microscopy observations of graphene on an h‐BN structure.

Correlated insulating phases of twisted bilayer graphene at commensurate filling fractions: A Hartree-Fock study

Motivated by the recently observed insulating states in twisted bilayer graphene, we study the nature of the correlated insulating phases of the twisted bilayer graphene at commensurate filling fractions. We use the continuum model and project the Coulomb interaction onto the flat bands to study the ground states by using a Hartree-Fock approximation. In the absence of the hexagonal boron nitride substrate, the ground states are the intervalley coherence states at charge neutrality (filling $\nu$ = 0, or four electrons per moir\'e cell) and at $\nu$ = -1/4 and -1/2 (three and two electrons per cell, respectively) and the $C_2\mathcal{T}$ symmetry-broken state at $\nu$= -3/4 (one electron per cell). The hexagonal boron nitride substrate drives the ground states at all $\nu$ into $C_2\mathcal{T}$ symmetry broken-states. Our results provide good reference points for further study of the rich correlated physics in the twisted bilayer graphene.

Detection of chirality of single-walled carbon nanotubes on hexagonal boron nitride

Single-walled carbon nanotube (SWNT) has attracted widespread attention for its unique one-dimensional atomic structure and outstanding physical and chemical properties. For both fundamental research and practical applications, it is critical to figure out the chirality of SWNT because the electronic band structure and the consequent electrical and optical properties are determined by its chirality. Here, we found that the chirality of SWNT on an insulating hexagonal boron nitride (h-BN) substrate can be obtained in a quick and concise manner through measuring the aligning direction and the diameter of SWNT. Additionally, Rayleigh scattering spectroscopy is conducted to confirm the obtained chirality. The developed technique for direct detection of chirality of SWNT on an insulating h-BN substrate could advance the study of chirality-dependent functional SWNT devices and the applications of SWNT related to chirality.

Gate-tunable topological flat bands in twisted monolayer-bilayer graphene

We investigate the band structure of twisted monolayer-bilayer graphene (tMBG), or twisted graphene on bilayer graphene (tGBG), as a function of twist angles and perpendicular electric fields in search of optimum conditions for achieving isolated nearly flat bands. Narrow bandwidths comparable or smaller than the effective Coulomb energies satisfying $U_{\textrm{eff}} /W \gtrsim 1$ are expected for twist angles in the range of $0.3^{\circ} \sim 1.5^{\circ}$, more specifically in islands around $\theta \sim 0.5^{\circ}, \, 0.85^{\circ}, \,1.3^{\circ}$ for appropriate perpendicular electric field magnitudes and directions. The valley Chern numbers of the electron-hole asymmetric bands depend intrinsically on the details of the hopping terms in the bilayer graphene, and extrinsically on factors like electric fields or average staggered potentials in the graphene layer aligned with the contacting hexagonal boron nitride substrate. This tunability of the band isolation, bandwidth, and valley Chern numbers makes of tMBG a more versatile system than twisted bilayer graphene for finding nearly flat bands prone to strong correlations.

Chemical Vapor Deposition of IrTe2 Thin Films

Two-dimensional (2D) IrTe2 has a profound charge ordering and superconducting state, which is related to its thickness and doping. Here, we report the chemical vapor deposition (CVD) of IrTe2 films using different Ir precursors on different substrates. The Ir(acac)3 precursor and hexagonal boron nitride (h-BN) substrate is found to yield a higher quality of polycrystalline IrTe2 films. Temperature-dependent Raman spectroscopic characterization has shown the q1/8 phase to HT phase at ~250 K in the as-grown IrTe2 films on h-BN. Electrical measurement has shown the HT phase to q1/5 phase at around 220 K.

Large enhancement of thermoelectric performance in MoS2/h-BN heterostructure due to vacancy-induced band hybridization

Local impurity states arising from atomic vacancies in two-dimensional (2D) nanosheets are predicted to have a profound effect on charge transport due to resonant scattering and can be used to manipulate thermoelectric properties. However, the effects of these impurities are often masked by external fluctuations and turbostratic interfaces; therefore, it is challenging to probe the correlation between vacancy impurities and thermoelectric parameters experimentally. In this work, we demonstrate that n-type molybdenum disulfide (MoS2) supported on hexagonal boron nitride (h-BN) substrate reveals a large anomalous positive Seebeck coefficient with strong band hybridization. The presence of vacancies on MoS2 with a large conduction subband splitting of 50.0 ± 5.0 meV may contribute to Kondo insulator-like properties. Furthermore, by tuning the chemical potential, the thermoelectric power factor can be enhanced by up to two orders of magnitude to 50 mW m-1 K-2 Our work shows that defect engineering in 2D materials provides an effective strategy for controlling band structure and tuning thermoelectric transport.

Hexagonal Boron Nitride As an Ideal Substrate for Carbon Nanotube Photonics

Hexagonal boron nitride is widely used as a substrate for two-dimensional materials in both electronic and photonic devices. Here, we demonstrate that two-dimensional hexagonal boron nitride is also an ideal substrate for one-dimensional single-walled carbon nanotubes. Nanotubes directly attached to hexagonal boron nitride show bright photoluminescence with narrow linewidth at room temperature, comparable to air-suspended nanotubes. Using photoluminescence excitation spectroscopy, we unambiguously assign the chiralities of nanotubes on boron nitride by tracking individual tubes before and after contact with boron nitride. Although hexagonal boron nitride has a low dielectric constant and is attached to only one side of the nanotubes, we observe that optical transition energies are redshifted as much as ~50 meV from the air-suspended nanotubes. We also perform statistical measurements on more than 400 tubes, and the redshifts are found to be dependent on tube diameter. This work opens up new possibilities for all-solid-state carbon nanotube photonic devices by utilizing hexagonal boron nitride substrates.

Chern bands of twisted bilayer graphene: Fractional Chern insulators and spin phase transition

When one of the graphene layers of Magic Angle Twisted Bilayer Graphene is nearly aligned with its hexagonal boron nitride substrate (a configuration dubbed TBG/hBN), the active electronic bands are nearly flat, and have a Chern number $C=\pm1$. Recent experiments demonstrated a quantum anomalous Hall effect and spontaneous valley polarization at integer filling $\nu_T=3$ of the conduction band in this system. Motivated by this discovery, we ask whether fractional quantum anomalous Hall states (FQAH) could also emerge in TBG/hBN. We focus on the range of filling fractions where valley ferromagnetism was observed experimentally. Using exact diagonalization, we find that the ground states at $\nu_T = \frac{10}{3}$ and $\nu_T=\frac{17}{5}$ are fractional Chern insulator states in the flat band limit (in the hole picture, these are the fractional quantum Hall fractions $\frac{2}{3}$ and $\frac{3}{5}$). The ground state is either spin polarized or a spin singlet depending sensitively on band parameters. For nominally realistic band parameters, spin polarization is favored. Flattening the Berry curvature by changing a band parameter gives way to the spin singlet phase. Our estimation of the charge gap in the flat band limit shows that the FQAH state may be seen at accessible temperatures in experiments. We also study the effect of a non-zero bandwidth and show that there is a reasonable range of parameters in which the FQAH state is the ground state.

Fractional Chern insulator states in twisted bilayer graphene: An analytical approach

Recent experiments on bilayer graphene twisted near the magic angle have observed spontaneous integer quantum Hall states in the presence of an aligned hexagonal boron nitride (hBN) substrate. These states arise from valley ferromagnetism, and the complete filling of Chern bands. A natural question is whether fractional filling of the same bands would lead to fractional quantum Hall states, i.e. to fractional Chern insulators (FCIs). Here, we argue that the magic angle graphene bands have favorable quantum geometry for realizing FCI phases. We show that in the tractable `chiral' limit, the flat bands wavefunctions are an analytic function of the crystal momentum. This remarkable property fixes the quantum metric up to an overall momentum dependent scale factor, the local Berry curvature, whose variation is itself small. Thus the three conditions associated with FCI stability (i) narrow bands (ii) quantum metric satisfying the isotropic ideal droplet condition and (iii) relatively uniform Berry curvature are all satisfied. Our work emphasizes continuum real space approaches to FCIs in contrast to earlier works which mostly focused on tight binding models. This enables us to construct a Laughlin wavefunction on a real-space torus that is a zero energy ground state of pseudopotential-like interactions. The latter can be realized for Coulomb interaction in the limit of very short screening length. We also map the problem onto an equivalent one of Dirac particles in an inhomogeneous but periodic magnetic field and no crystal potential. Finally we discuss evolution of the band geometry on tuning away from the chiral limit and show numerically that some of the desirable properties continue to hold at a quantitative level for realistic parameter values.

Anomalous Hall effect, magneto-optical properties, and nonlinear optical properties of twisted graphene systems

We study the anomalous Hall effect, magneto-optical properties, and nonlinear optical properties of twisted bilayer graphene aligned with hexagonal boron nitride substrate, as well as twisted double bilayer graphene systems. We show that non-vanishing valley polarizations in twisted graphene systems would give rise to the anomalous Hall effect, which can be tuned by in-plane magnetic fields. The valley polarized states are also associated with giant Faraday and Kerr rotations in the terahertz frequency regime. Moreover, we propose that the twisted graphene systems exhibit colossal nonlinear optical responses by virtue of the inversion-symmetry breaking, the small bandwidth, and the small excitation gaps of the systems. In twisted double bilayer graphene, we find that certain components of the nonlinear photo-conductivity tensor are directly proportional to the orbital magnetization of the system, which would exhibit remarkable hysteresis behavior in response to perpendicular magnetic fields.

Symmetry breaking and skyrmionic transport in twisted bilayer graphene

Motivated by recent low-temperature magnetoresistance measurements in twisted bilayer graphene aligned with hexagonal Boron Nitride substrate, we perform a systematic study of possible symmetry breaking orders in this device at a filling of two electrons per Moir\'e unit cell. We find that the surprising non-monotonic dependence of the resistance on an out-of-plane magnetic field is difficult to reconcile with particle-hole charge carriers from the low-energy bands in symmetry broken phases. We invoke the non-zero Chern numbers of the twisted bilayer graphene flat bands to argue that skyrmion textures provide an alternative for the dominant charge carriers. Via an effective field-theory for the spin degrees of freedom, we show that the effect of spin Zeeman splitting on the skyrmion excitations provides a possible explanation for the non-monotonic magnetoresistance. We suggest several experimental tests, including the functional dependence of the activation gap on the magnetic field, for our proposed correlated insulating states at different integer fillings. We also discuss possible exotic phases and quantum phase transitions that can arise via skyrmion-pairing on doping such an insulator.

Narrow Excitonic Lines and Large-Scale Homogeneity of Transition-Metal Dichalcogenide Monolayers Grown by Molecular Beam Epitaxy on Hexagonal Boron Nitride

Monolayer transition-metal dichalcogenides (TMDs) manifest exceptional optical properties related to narrow excitonic resonances. However, these properties have been so far explored only for structures produced by techniques inducing considerable large-scale inhomogeneity. In contrast, techniques which are essentially free from this disadvantage, such as molecular beam epitaxy (MBE), have to date yielded only structures characterized by considerable spectral broadening, which hinders most of the interesting optical effects. Here, we report for the first time on the MBE-grown TMD exhibiting narrow and resolved spectral lines of neutral and charged exciton. Moreover, our material exhibits unprecedented high homogeneity of optical properties, with variation of the exciton energy as small as ±0.16 meV over a distance of tens of micrometers. Our recipe for MBE growth is presented for MoSe2 and includes the use of atomically flat hexagonal boron nitride substrate. This recipe opens a possibility of producing TMD heterostructures with optical quality, dimensions, and homogeneity required for optoelectronic applications.

Improving the Morphology and Crystal Quality of AlN Grown on Two-Dimensional hBN

Aluminum nitride was grown on two-dimensional hexagonal boron nitride (hBN) and sapphire substrates using metal organic vapor phase epitaxy. hBN itself was first deposited directly on 2 sapphire ...

Topological properties and orbital magnetism in twisted graphene systems

We review and discuss the electronic structures, topological properties and orbital magnetism in twisted bilayer (TBG) and multilayer graphene systems. Moiré pattern is formed in twisted bilayer graphene due to the mutual twist of the two graphene layers. The moiré potential induced by the twist can generate opposite pseudo magnetic fields in the Moiré supercell, which are coupled with the Dirac fermions and generate two sets of pseudo Landau levels with opposite Chern numbers <inline-formula><tex-math id="M2">\begin{document}$\pm1$\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20200506_M2.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20200506_M2.png"/></alternatives></inline-formula>. The two flat bands for each valley each spin of TBG are equivalent to the two zeroth pseudo Landau levels with opposite Chern numbers and opposite sublattice polarizations. Such a pseudo-Landau-level representation has significant implications on the quantum anomalous Hall states observed at integer fillings of the flat bands in TBG at the magic angle. The origin of the magic angle can also be naturally explained by using the pseudo-Landau-level picture. We further discuss twisted multilayer graphene systems, and show that topological flat bands generally exist in the twisted multilayer graphene systems. These topological flat bands have nonzero valley Chern numbers, which can be described by a succinct formula under certain approxmations. These topological flat bands in twisted bilayer and multilayer graphene systems are associated with orbital magnetism. A valley polarized state in the twist graphene system is an orbital magnetic state with nontrivial current-loop pattern in the moiré supercell. The experimentally observed correlated insulating states at <inline-formula><tex-math id="M3">\begin{document}$\pm 1/2$\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20200506_M3.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20200506_M3.png"/></alternatives></inline-formula> fillings and at charge neutrality point of magic-angle TBG can be valley polarized states, which are associated with compensating current loops and induce staggered orbital magnetizations on the moiré length scale. If <inline-formula><tex-math id="M4">\begin{document}$C_{2z}$\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20200506_M4.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20200506_M4.png"/></alternatives></inline-formula> symmetry is broken due to the alignment of hexagonal boron nitride substrate, then a valley-polarized ground state would be a moiré orbital ferromagnetic state, which exhibits not only (quantum) anomalous Hall effect, but also novel magneto-optical and nonlinear optical responses.