Abstract
Two-dimensional (2D) IrTe2 has a profound charge ordering and superconducting state, which is related to its thickness and doping. Here, we report the chemical vapor deposition (CVD) of IrTe2 films using different Ir precursors on different substrates. The Ir(acac)3 precursor and hexagonal boron nitride (h-BN) substrate is found to yield a higher quality of polycrystalline IrTe2 films. Temperature-dependent Raman spectroscopic characterization has shown the q1/8 phase to HT phase at ~250 K in the as-grown IrTe2 films on h-BN. Electrical measurement has shown the HT phase to q1/5 phase at around 220 K.
Highlights
IrTe2 has attracted much interest for its intriguing properties such as structure phase transitions, charge density wave (CDW) ordering and superconductivity arising from the strong spin-orbit coupling (SOC) [1,2,3,4,5,6]
IrTe2 has a trigonal phase, in which each iridium atom is coordinated with six tellurium atoms, forming edge-shared IrTe6 octahedrons [10]
The phase transition from the high temperature (HT) phase to the striped charge-ordered phase of IrTe2 would be suppressed as the sample thickness decreases, which is favorable for the appearance of the hexagonal superconductive phase [14]
Summary
IrTe2 has attracted much interest for its intriguing properties such as structure phase transitions, charge density wave (CDW) ordering and superconductivity arising from the strong spin-orbit coupling (SOC) [1,2,3,4,5,6]. Charge ordering is formed due to the charge transfer from Ir 5d to Te 5p, forming Ir4+ -Ir4+ dimers This dimerization suppresses the structure of the IrTe6 octahedron. The phase transition from the HT phase to the striped charge-ordered phase of IrTe2 would be suppressed as the sample thickness decreases, which is favorable for the appearance of the hexagonal superconductive phase [14]. Crystal structure of IrTe in (a,d) high temperature (HT) phase, (b,e) 1/5 phase and Figure structure of IrTe. Ir atoms are shown in the structures. From the HT phase to the q1/5 phase at around 220 K
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