Heterojunction Research Articles

Structural, chemical states, electrical properties and forward transport phenomena of Ti/MnO2/p-InP heterostructure with a transition metal oxide MnO2 interlayer

The study examines the surface topology, optical, structural and electrical characteristics of e-beam evaporated manganese dioxide (MnO2) films on p-InP using AFM, FESEM, UV–Vis, XRD, XPS and I–V procedures. The surface roughness of the MnO2 was smooth from AFM and FESEM analysis. The optical bandgap of MnO2 film was extracted from Tauc's plot. The outcomes endorse that the MnO2 layer deposited on InP. Then, the Ti/MnO2/p-InP heterostructure (HS) was created with an MnO2 interlayer to check the consequence of MnO2 on the electrical features of the Ti/p-InP Schottky diode (SD). The I–V results demonstrated that the higher Φb is acquired for the HS (0.90 eV) than the SD (0.84 eV), implying the MnO2 layer alters the Фb. Also, the Фb, ‘n’ and RS of the SD and HS can be determined by utilizing Cheung's and Norde's functions. The estimated Фb was almost similar, indicating the methodologies applied here are sturdy and effective. The determined NSS of the HS is lesser than the SD, implying that the MnO2 interlayer has a significant role in the decrease in NSS. The forward bias log (I)-log(V) plot of the SD and HS indicates that the ohmic behavior and space charge limited the conduction process at lower-bias and higher-bias segments, respectively. The study outcomes suggested that the transition metal oxide MnO2 layer would be favourable for creating MIS devices.

Study on the Thermal Stability of Molybdenum Oxide‐Passivated Silicon Solar Cells

Dopant‐free heterojunction (HJ) solar cells are known for their simple process conditions and low parasitic absorption. However, stability issues remain one of the major obstacles for further development of cells with transition metal oxides (TMOs). Therefore, this research demonstrates the mechanism of thermal annealing degradation effects on TMOs/silicon (Si) HJ, namely, the infiltration of oxygen from air and the bidirectional diffusion of oxygen from TMOs, by investigating a typical molybdenum oxide (MoOx)/Si contact. A dense Au interlayer is introduced to block the interdiffusion of oxygen from the MoOx/Si interface and its surrounding environment. As a result, the dense layer slows down the interfacial oxidation of MoOx/Si and the degradation of the MoOx work function, thus improving the stability of the MoOx/Si HJ to 200 °C. The diffusion of oxygen from MoOx to the MoOx/Si interface will be critical to further promote the thermal stability of the devices thereafter, especially for the cells with i‐a‐Si:H layer as the passivation layer. To attain stable dopant‐free cells with MoOx, it is crucial to prevent oxygen diffusion into Si while maintaining a high MoOx work function and a thin SiOx layer at the interface.

Tumour microenvironment-responded Fe-doped carbon dots-sensitized cubic Cu2O for Z-scheme heterojunction-enhanced sono-chemodynamic synergistic tumor therapy

The efficacy of electron-hole separation in a single sonosensitizer and the complexities of the tumor microenvironment (TME) present significant challenges to the effectiveness of sonodynamic therapy (SDT). Designing efficient sonosensitizers to enhance electron-hole separation and alleviate TME resistance is crucial yet challenging. Herein, we introduce a novel Z-scheme heterojunctions (HJs) sonosensitizer using Fe-doped carbon dots (CDs) as auxiliary semiconductors to sensitize cubic Cu2O (Fe-CDs@Cu2O) for the first time. Fe-CDs@Cu2O demonstrated enhanced SDT effects due to improved electron-hole separation. Additionally, the introduction of Fe ions in CDs synergistically enhances Fenton-like reactions with Cu ions in Cu2O, resulting in enhanced chemodynamic therapy (CDT) effects. Moreover, Fe-CDs@Cu2O exhibited rapid glutathione (GSH) depletion, effectively mitigating TME resistance. With high rates of 1O2 and OH generated by Fe-CDs@Cu2O, coupled with strong GSH depletion, single drug injection and ultrasound (US) irradiation effectively eliminate tumors. This innovative heterojunction sonosensitizer offers a promising pathway for clinical anti-tumor treatment.

Two-Dimensional Layered Heterojunctions for Photoelectrocatalysis.

Two-dimensional (2D) layered nanomaterial heterostructures, arising from the combination of 2D materials with other low-dimensional species, feature a large surface area to volume ratio, which provides a high density of active sites for catalytic applications and for (photo)electrocatalysis (PEC). Meanwhile, their electronic band structure and high electrical conductivity enable efficient charge transfer (CT) between the active material and the substrate, which is essential for catalytic activity. In recent years, researchers have demonstrated the potential of a range of 2D material interfaces, such as graphene, graphitic carbon nitride (g-C3N4), metal chalcogenides (MCs), and MXenes, for (photo)electrocatalytic applications. For instance, MCs such as MoS2 and WS2 have shown excellent catalytic activity for hydrogen evolution, while graphene and MXenes have been used for the reduction of carbon dioxide to higher value chemicals. However, despite their great potential, there are still major challenges that need to be addressed to fully realize the potential of 2D materials for PEC. For example, their stability under harsh reaction conditions, as well as their scalability for large-scale production are important factors to be considered. Generating heterojunctions (HJs) by combining 2D layered structures with other nanomaterials is a promising method to improve the photoelectrocatalytic properties of the former. In this review, we inspect thoroughly the recent literature, to demonstrate the significant potential that arises from utilizing 2D layered heterostructures in PEC processes across a broad spectrum of applications, from energy conversion and storage to environmental remediation. With the ongoing research and development, it is likely that the potential of these materials will be fully expressed in the near future.

Light-activated surface passivation for more efficient silicon heterojunction solar cells: Origin, physics and stability

Silicon heterojunction (HJT) solar cells have world-leading efficiencies due to outstanding surface passivation. Yet, maintaining their performance during the lifetime of a photovoltaic module requires excellent quality and stability of the surface regions. It is well known that HJT solar cells can show an increase or reduction in performance under illumination, and this instability has been related to changes in the surface regions. This work investigates the stability of surface passivation in HJT solar cells by modelling the injection-dependent minority carrier lifetime of a range of symmetrically a-Si passivated silicon wafers. Fixed charges and defects at the interface are varied in the model to find the best fit to the injection-dependent lifetime before and after a high-intensity illumination treatment. The results indicate that the laser process induces an increase in field effect passivation at the surface, which is then reduced upon storage in the dark. The results show that lifetime spectroscopy is a useful tool to investigate the nature of a-Si passivation degradation.

Precise detection of trace level protein using MIP-MoS2 nanocomposite functionalized PCF based interferometer.

Fiber optic interferometry combined with recognizing elements has attracted intensive attention for the development of different biosensors due to its superior characteristic features. However, the immobilization of sensing elements alone is not capable of low-concentration detection due to weak interaction with the evanescent field of the sensing transducer. The utilization of different 2D materials with high absorption potential and specific surface area can enhance the intensity of the evanescent field and hence the sensitivity of the sensor. Here, a biosensor has been fabricated using an inline hetero fiber structure of photonic crystal fiber (PCF) and single-mode fiber (SMF) functionalized with a nanocomposite of molybodenum di-sulfide (MoS2) and molecular imprinting polymer (MIP) to detect trace levels of bovine serum albumin (BSA). The sensor showed a wide dynamic detection range with a high sensitivity of 2.34 × 107 pm/µg L-1. It shows working potential over a wide pH range with a subfemtomolar detection limit. The compact size, easy fabrication, stable structure, long detection range, and high sensitivity of this sensor would open a new path for the development of different biosensors for online and remote sensing applications.

Robust Magnetoelectric Coupling in FeTiO3/Ga2O3 Non-van der Waals Heterostructures.

Magnetoelectric coupling represents a significant breakthrough for next-generation electronics, offering the ability to achieve nonvolatile magnetic control via electrical means. In this comprehensive investigation, leveraging first-principles calculations, we unveil a robust magnetoelectric coupling within multiferroic heterostructures (HSs) by ingeniously integrating a non-van der Waals (non-vdW) magnetic FeTiO3 monolayer with the ferroelectric (FE) Ga2O3. Diverging from conventional van der Waals (vdW) multiferroic HSs, the magnetic states of the FeTiO3 monolayer can be efficiently toggled between ferromagnetic (FM) and antiferromagnetic (AFM) configurations by reversing the polarization of the Ga2O3 monolayer. This intriguing phenomenon arises from polarization-dependent substantial interlayer electron transfers and the interplay between superexchange and direct-exchange magnetic couplings of the iron atoms. The carrier-mediated interfacial interactions induce crucial shifts in Fermi level positions, decisively imparting distinct electronic characteristics near the Fermi level of composite systems. These novel findings offer exciting prospects for the future of magnetoelectric technology.

TMD material investigation for a low hysteresis vdW NCFET logic transistor

Boltzmann limit is inevitable in conventional MOSFETs, which prevent them to be used for low-power applications. Research in device physics can address this problem by selection of proper materials satisfying our requirements. Recently, 2D transition metal di-chalcogenide (TMD) materials are gaining interest because they help alleviate short-channel effects and DIBL problems. The TMD materials are composed by covalently bonded weak van der Waals (vdW) interaction and can be realized as hetero structures with 2D ferro-electric material CuInP2S6 at the gate stack. This paper demonstrates a vdW negative capacitance field effect transistor (NCFET) structure in TCAD and the design was validated for voltage-current Characteristics. Parametric analysis shows MoS2 with phenomenal on/off ratio, narrow hysteresis than the counterparts. Simulation shows that MoS2 vdW NCFET has a high transconductance of 2.36 µS µm−1. A steep slope of 28.54 mV dec−1 is seen in MoS2 vdW NCFET which promises the performance of logic applications at a reduced supply voltage.

Artificial Retina Based on Organic Heterojunction Transistors for Mobile Recognition.

The flicker frequency of incident light constitutes a critical determinant in biology. Nevertheless, the exploration of methods to simulate external light stimuli with varying frequencies and develop artificial retinal neurons capable of responsive behavior remains an open question. This study presents an artificial neuron comprising organic phototransistors. The triggering properties of neurons are modulated by optical input, enabling them to execute rudimentary synaptic functions, emulating the biological characteristics of retinal neurons. The artificial retinal neuron exhibits varying responses to incoming light frequencies, allowing it to replicate the persistent visual behavior of the human eye and facilitating image discrimination. Additionally, through seamless integration with circuitry, it can execute motion recognition on a machine cart, preventing collisions with high-speed obstacles. The artificial retinal neuron offers a cost-effective and energy-efficient route for future mobile robot processors.

Impact of Polarity Mismatch in Infinite-Layer Nickelates.

The recent discovery of superconductivity in infinite-layer Sr-doped NdNiO2 grown on SrTiO3(001) provides a new platform to explore the conducting mechanism of unconventional superconductors. However, the electronic structure of infinite-layer nickelates remains controversial. In this paper, we systematically compare the structural and electronic properties of NdNiO2 films grown on SrTiO3 and LaAlO3 substrates using first-principles calculations. Our results show that the lattice reconstruction accompanied by electronic reconstruction occurs in nickelate films on both substrates. Although both heterostructures (HSs) are conducting at the interface, the SrTiO3-based HS shows distinct atomic displacement in the interfacial TiO2 layer and significant electron accumulation deep into three SrTiO3 layers below the interface, while the LaAlO3-based HS shows negligible atomic displacement and electron localization in the interfacial AlO2 layer, reflecting the impact of polarity mismatch on the electronic structure. Further, Wannier function calculations reveal that the interface stress has no obvious effect on the splitting energy and hopping integral between Ni 3d and Nd-layer orbitals. Although the hybridization between Ni 3dx2-y2 and Nd 5d orbitals is tiny, the hybridization between the Ni 3dx2-y2 orbital and an itinerant interstitial s (IIS) orbital is significantly strong in both cases, suggesting that the IIS orbital may play a critical role in the superconductivity of nickelates.

Label-Free Metal-Oxide Transistor Biosensors for Metabolite Detection in Human Saliva.

Metabolites are essential molecules involved in various metabolic processes, and their deficiencies and excessive concentrations can trigger significant physiological consequences. The detection of multiple metabolites within a non-invasively collected biofluid could facilitate early prognosis and diagnosis of severe diseases. Here, a metal oxide heterojunction transistor (HJ-TFT) sensor is developed for the label-free, rapid detection of uric acid (UA) and 25(OH)Vitamin-D3 (Vit-D3) in human saliva. The HJ-TFTs utilize a solution-processed In2O3/ZnO channel functionalized with uricase enzyme and Vit-D3 antibody for the selective detection of UA and Vit-D3, respectively. The ultra-thin tri-channel architecture facilitates strong coupling between the electrons transported along the buried In2O3/ZnO heterointerface and the electrostatic perturbations caused by the interactions between the surface-immobilized bioreceptors and target analytes. The biosensors can detect a wide range of concentrations of UA (from 500nm to 1000µM) and Vit-D3 (from 100 pM to 120nm) in human saliva within 60s. Moreover, the biosensors exhibit good linearity with the physiological concentration of metabolites and limit of detections of ≈152nm for UA and ≈7 pM for Vit-D3 in real saliva. The specificity is demonstrated against various interfering species, including other metabolites and proteins found in saliva, further showcasing its capabilities.

High-Safety Electrolytes with an Anion-Rich Solvation Structure Tuned by Difluorinated Cations for High-Voltage Lithium Metal Batteries.

As next-generation energy storage devices, lithium metal batteries (LMBs) must offer high safety, high-voltage resistance, and a long life span. Electrolyte engineering is a facile strategy to tailor the interfacial chemistry of LMBs. In particular, the solvation structure and derived solid electrolyte interphase (SEI) are crucial for a satisfactory battery performance. Herein, a novel middle-concentrated ionic liquid electrolyte (MCILE) with an anion-rich solvation structure tuned by difluorinated cations is demonstrated to achieve ultrahigh safety, high-voltage stability, and excellent ternary-cathode compatibility. Novel gem-difluorinated cations first synthesized for prestoring fluorine on positively charged species, not only preferentially adsorb in the inner-Helmholtz layers, but also participate in regulating the Li+ solvation structure, resulting in a robust interphase. Moreover, these weak interactions in the Li+ solvation structure including anion-solvent and ionic liquid (IL) cation-solvent pairs are first revealed, which are beneficial for promoting an anion-dominated solvation structure and the desolvation process. Benefiting from the unique anion-rich solvation structure, a stable hetero-SEI structure is obtained. The designed MCILE exhibits compatibility with Li metal anode and the high-voltage ternary cathode at high temperatures (60°C). This work provides a new approach for regulating the solvation structure and electrode interphase chemistry of LMBs via difluorinated IL cations.

Strain and optical characteristics analyses of three-dimentional self-ordered multilayered SiGe nanodots by photoluminescence and Raman spectroscopy

The strain state, optical properties, and band structure of the self-ordered multilayered silicon-germanium (SiGe) nanodots, which are staggered and dot-on-dot alignment and embedded by Si spacer, were evaluated by Raman spectroscopy and low-temperature photoluminescence (PL). These results suggest that the compressive strain applied to the staggered nanodots is smaller than that of the dot-on-dot nanodots, which contributes to the shrinking of the bandgap of the staggered nanodots. Strong PL intensity was observed from the nanodots compared to the single crystalline bulk SiGe due to the carrier confinement and high crystal quality of the nanodots. The stack-controlled nanodots showed a redshift of the PL peaks compared to the bulk SiGe and the effect of strain induced in SiGe nanodots might not be enough to explain this phenomenon. The cause of the redshift was clarified by considering the hetero band structure of the nanodots and the tensile strained spacer.

Unraveling the strain tuning mechanism of interlayer excitons in WSe2/MoSe2 heterostructure

Atomically thin transition metal dichalcogenides (TMDs) exhibit rich excitonic physics, due to reduced dielectric screening and strong Coulomb interactions. Especially, some attractive topics in modern condensed matter physics, such as correlated insulator, superconductivity, topological excitons bands, are recently reported in stacking two monolayer (ML) TMDs. Here, we clearly reveal the tuning mechanism of tensile strain on interlayer excitons (IEXs) and intralayer excitons (IAXs) in WSe2/MoSe2 heterostructure (HS) at low temperature. We utilize the cryogenic tensile strain platform to stretch the HS, and measure by micro-photoluminescence (μ-PL). The PL peaks redshifts of IEXs and IAXs in WSe2/MoSe2 HS under tensile strain are well observed. The first-principles calculations by using density functional theory reveals the PL peaks redshifts of IEXs and IAXs origin from bandgap shrinkage. The calculation results also show the Mo-4d states dominating conduction band minimum shifts of the ML MoSe2 plays a dominant role in the redshifts of IEXs. This work provides new insights into understanding the tuning mechanism of tensile strain on IEXs and IAXs in two-dimensional (2D) HS, and paves a way to the development of flexible optoelectronic devices based on 2D materials.

Localisation-to-delocalisation transition of moiré excitons in WSe2/MoSe2 heterostructures.

Moiré excitons (MXs) are electron-hole pairs localised by the periodic (moiré) potential forming in two-dimensional heterostructures (HSs). MXs can be exploited, e.g., for creating nanoscale-ordered quantum emitters and achieving or probing strongly correlated electronic phases at relatively high temperatures. Here, we studied the exciton properties of WSe2/MoSe2 HSs from T = 6 K to room temperature using time-resolved and continuous-wave micro-photoluminescence also under a magnetic field. The exciton dynamics and emission lineshape evolution with temperature show clear signatures that MXs de-trap from the moiré potential and turn into free interlayer excitons (IXs) for temperaturesabove 100 K. The MX-to-IX transition is also apparent from the exciton magnetic moment reversing its sign when the moiré potential is not capable of localising excitons at elevated temperatures. Concomitantly, the exciton formation and decay times reduce drastically. Thus, our findings establish the conditions for a truly confined nature of the exciton states in a moiré superlattice with increasing temperature and photo-generated carrier density.

Design and Analyze the Effect of Hetero Material and Dielectric on TFET with Dual Work Function Engineering

Background: As the size of the field effect transistors is reduced down to nanometers, the performance of the devices is affected by various short-channel effects. To overcome these effects, various novel devices are used. Tunnel Field Effect Transistors (TFET) are novel devices in which the drain current needs to be improved. Gate engineering and III-V compound materials are proposed to improve the ON current and reduce the leakage current along with its ambipolar behaviour. Methods: The proposed device structure is designed with a heterojunction hetero dielectric dual material gate Tunnel Field Effect Transistor incorporating various combinations of III-V compound materials such as AlGaAsSb/InGaAs, InGaAs/Ge, InGaAs/InP and SiGe/Si. As in III-V composite materials like AlGaAsSb/InGaAs, the narrower bandgap at the source channel interface helps to improve the electric field across the junction. At the same time, the wider bandgap at the channel drain junction leads to unidirectional current flow, resulting in ambipolar reduction. 2D TCAD simulation is used to obtain the electrical parameters for Hetero junction TFETs and the comparison analysis of different Hetero device structures. Results: The device's electrical parameters, such as energy band diagram, current density, electric field, drain current, gate capacitance and transconductance, have been simulated and analyzed. Besides, the dual material used in the gate, such as Metal1 (M1) and Metal2 (M2), along with HfO2/SiO2 stacked dielectric, helps improve the gate controllability over the channel and the leakage current reduction. Conclusion: An ION=10-1A/μm, IOFF = 10-12A/μm at drive voltage 0.5V is obtained for InGaAs/InP layer at the source channel hetero junction TFET, and ION=10-2A/μm, IOFF =10-14A/μm at drive voltage 0.5V is obtained for SiGe/Si layer at the source channel hetero junction TFET. Therefore, the InGaAs/InP and SiGe/Si layer TFET are more suitable for ultra-low power integrated circuits.

Determining of Efficiency For The N749 Dye contact with TiO2 In Dye Sensitized Solar Cell

In this research, we investigate and evaluate the efficiency of a hetero junction N749- device based on a simple donor-acceptor model for electron transfer. Electron transfer from a photo-excited N749 sensitized into a wide-band gap is the basic charge separation in dye-sensitized solar cells, or "DSSCs". Due to the understanding of the current of the DSSCs functioning mechanism, the energy levels of the hetero junction N749- device surrounded by DCM solvent as polar media must be continuum levels. The current-voltage (J-V) characteristics of the N749- device are calculated in two concentrations at room temperature (T=300 k) and 100 irradiation. The fill factor and efficiency of the device are found to be 0.134 and 6.990 for concentration compared to 0.146 and 9.974 for concentration . The efficiency of the N749- device is in agreement with experimental results. It also offers a rational for the suggestion to use the application of N749- high-performance solar cells.

The Development of Carbon/Silicon Heterojunction Solar Cells through Interface Passivation.

Passivating contactsin heterojunction (HJ) solar cells have shown great potential in reducing recombination losses, and thereby achieving high power conversion efficiencies in photovoltaic devices. In this direction, carbon nanomaterials have emerged as a promising option for carbon/silicon (C/Si) HJsolar cells due to their tunable band structure, wide spectral absorption, high carrier mobility, and properties such as multiple exciton generation. However, the current limitations in efficiency and active area have hindered the industrialization of these devices. In this review, they examine the progress made in overcoming these constraints and discuss the prospect of achieving high power conversion efficiency (PCE) C/Si HJ devices. A C/Si HJ solar cell is also designed by introducing an innovative interface passivation strategy to further boost the PCE and accelerate the large area preparationof C/Si devices. The physical principle, device design scheme, and performanceoptimization approaches of this passivated C/Si HJ cells are discussed. Additionally, they outline potential future pathways and directions for C/Si HJ devices, including a reduction in their cost to manufacture and their incorporation intotandem solar cells. As such, this review aims to facilitate a deeperunderstanding of C/Si HJ solar cells and provide guidance for their further development.

Deformation characteristics and strengthening-toughening mechanisms of heterostructured 2024Al alloy with various heterogeneity levels

Heterostructured (HS) 2024Al alloys with various heterogeneity levels, consisting of soft domains (CGs) and hard domains (FGs, Al3Tip, and eutectic compounds), were fabricated via adjusting the mold temperature of powder thixoforming. The results reveal that increasing the mold temperature leads to a decrease in microhardness discrepancy between soft and hard domains from 2.12 to 1.08 GPa, and in volume fraction from 0.08 to 0.02, indicating a decrease in heterogeneity level. The alloy thixoformed at 250 °C exhibits a moderate heterogeneity level (the discrepancies in microhardness of 1.23 GPa and volume fraction of 0.04), which endows this alloy with the prominent comprehensive mechanical properties (ultimate tensile strength: 455 MPa, yield strength: 291 MPa, and elongation: 8.65 %). Furthermore, the deformation process of HS alloys occurs in a progressive order, starting from CGs, to FGs, then followed by eutectic compounds, and finally Al3Tip, i.e., the soft domains begin to deform first and then hard domains. The excellent ductility originates from the high hetero-deformation induced (HDI) hardening caused by the largest ability of dislocations accumulation at the interfaces of soft/hard domains. Additionally, the densified microstructure, relatively homogenized stress concentration after thixoforming, and the dislocations emitted from the submicro-Al3Tip also contribute to the strain hardening, and thus enhancing the ductility. In view of the heterogeneous structure, this work proposes a complex calculation model to predict the strength of the HS 2024Al alloys. The findings offer valuable insights into achieving optimal strength-ductility combination in HS alloys by the design of heterogeneous structure and fabrication technology.

Tailoring electronic and optical properties of hBN/InTe and hBN/GaTe heterostructures through biaxial strain engineering

In this research study, we systematically investigate the electronic and optical properties of van der Waals heterostructures (HSs) consisting of InTe (GaTe) and hBN monolayers, subjected to controlled biaxial strain. Our analysis demonstrates that the application of strain induces noteworthy alterations in the electronic band structure, enabling precise manipulation of the band gap and augmentation of the absorption properties of these structures. Employing density functional theory, we conduct a comprehensive examination of the influence of strain on the electronic and optical characteristics of these HSs. Our investigation showcases the remarkable potential of strain engineering in rendering these heterostructures into efficient and robust wide-range absorbers, particularly optimised for the visible spectrum, underscoring their relevance in various photonic and optoelectronic applications, paving the way for integration into advanced nanodevices.