The development of semi-transparent organic solar cells (ST-OSCs) for building-integrated photovoltaics is fundamentally constrained by the inherent trade-off between transparency and efficiency.To achieve a breakthrough, it is imperative to maintain high transparency while mitigating the concomitant efficiency loss in low-donor-content devices. Herein, we address this challenge by implementing a strategy that optimizes dual-channel photoelectric conversion, which synergistically integrates the respective advantages of both the heterojunction (HJ) channel and the spontaneously formed photo-charge (SP) channel.The results reveal that the HJ channel primarily governs hole transport and thus the fill factor, whereas the SP channel is pivotal for charge generation, directly influencing the short-circuit current density. Strategic acceptor selection and dual-additive-assisted morphology control effectively minimize electrical losses from insufficient charge generation and severe recombination, enabling a remarkable power conversion efficiency of 11.3% in PTB7-Th:BTP-eC9 (1:4) devices that outperforms their bulk heterojunction (BHJ) counterparts (10.4%), without losing the high transparency (>65%). The general applicability of this strategy was further validated in PM6:BTP-eC9 (1:3) based ST-OSCs, yielding a competitive light utilization efficiency of 4.67% and demonstrating the generalizability of our approach across different active layer systems. This study reveals the crucial role of dual-channel photoelectric conversion in realizing high-performance ST-OSCs.

Abstract In this work, we demonstrate a high-performance TFT utilizing a novel heterojunction (HJ) active layer composed of indium oxide (In₂O₃) and gallium oxide (Ga₂O₃). We report on the fabrication and characterization of TFTs with an In₂O₃/Ga₂O₃ heterostructure channel to simultaneously achieve high mobility and operational stability. The In₂O₃/Ga₂O₃ heterojunction was deposited by atomic layer deposition at 275℃. The electrical properties and bias stress stability of the heterojunction TFTs were systematically investigated. The optimized TFT exhibits a high field-effect mobility (μFE) of 95 cm²/V·s, a large Ion/Ioff ratio of > 10⁸, and a steep subthreshold swing (SS) of 100 mV/decade.Remarkably, the device demonstrates exceptional stability, with a negligible threshold voltage shift (ΔVth) of only 0.05 V under positive bias stress (1MV/cm, 1000 s) and -0.07 V under negative bias stress (-1MV/cm, 1000 s). The device also shows good stability under high intensity illumination with ΔVth of -0.36V under PBIS test (1MV/cm, 1000 s, 10000lux) and ΔVth of -0.76V under NBIS test (-1MV/cm, 1000 s, 10000lux).

Ferroelectric polarization materials have emerged as a revolutionary pathway for designing efficient heterojunction photocatalysts, offering unique advantages in manipulating charge carrier dynamics through built-in electric fields. This study systematically investigates how the coupling of ferroelectric polarization and strain engineering modulate the electronic structure and optoelectronic properties performance of GaTe/In2Se3 heterostructure (HS), aiming to establish structure-activity relationships for multifunctional optoelectronic applications. Reversible switching of band alignment in the GaTe/In2Se3 HS from Type-I to Type-II was achieved through biaxial strain and ferroelectric polarization reversal of In2Se3 between positive (+P) and negative (-P) states, driven by interfacial charge redistribution and built-in electric field modulation. This work demonstrates that coupling ferroelectric polarization with strain engineering provides a versatile strategy to tailor HS functionalities. Synergistic ferroelectric polarization and strain engineering enable multifunctional optimization of HS, paving the way for adaptive optoelectronic catalytic devices via band alignment and carrier dynamics modulation. This study shows that ferroelectric polarization coupled with strain engineering enables effective tuning of band alignment and carrier dynamics in GaTe/In2Se3 heterostructures. Polarization reversal and strain synergistically modulate interfacial electric fields, achieving reversible Type-I/Type-II band switching for multifunctional optoelectronic applications.

The half reaction of oxygen evolution reaction (OER) has slow kinetics compared to the other reactions of hydrogen evolution reaction (HER) in electrocatalyst-based water splitting (WS) for hydrogen production. To improve the WS by an electrocatalyst, the use of spinel oxide based heterostructure (HS) catalysts supported by a carbon material is considered as a cost-effective strategy for the application of OER over noble metal catalysts. Here, for the first time, a novel WO3/NiCo2O4 heterostructure coupled with MWCNT was synergistically interface engineered via an ultrasonication-assisted hydrothermal synthesis method to achieve an efficient electrocatalyst based oxygen evolution reaction (OER) due to their significant electrochemical activity of HS. The rational integration of WO3 and redox-active NiCo2O4 with the highly conductive MWCNT framework results in a hierarchically porous heterointerface that promotes improved charge carrier transport, enhanced active site accessibility, and synergistic conductivity. The electrochemical results demonstrate the reduced overpotential of 323 mV at 10 mA cm-2 for MWCNT@WO3/NiCo2O4 with a Tafel slope of 123 mV dec-1, a reduced charge transfer resistance of 2.5 Ω, and a large electrochemical double-layer capacitance of 48.9 mF cm-2, outperforming its individual and WO3/NiCo2O4 counterparts. Improved reaction kinetics, reduced energy barriers, and superior electrochemical durability of over 38 h underscore the effectiveness of this interface engineering strategy. These findings highlight the promise of MWCNT@WO3/NiCo2O4 as a cost-effective, high-performance heterostructure for OER electrocatalysis in integrated water splitting and sustainable oxygen evolution reactions.

In recent years, two-dimensional (2D) ferroelectric materials have garnered significant attention for their applications in non-volatile memory devices due to their ferroelectricity. However, systematic research on the transport mechanisms at ferroelectric polarization modulation interfaces and their applications in logic devices remains limited. In this study, a 2D ferroelectric heterojunction FET (FeHJ-FET) based on an In2Se3/graphene (Gr) vdW ferroelectric heterojunction is proposed. We reveal the potential of α-In2Se3 as a semiconductor in 5 nm 2D FETs using density-functional theory (DFT) combined with the non-equilibrium Green's function (NEGF) method. A Nonvolatile modulation of the interface Schottky barrier height (SBH) is realized by reversing the polarization direction of α-In2Se3, achieving an Ohmic contact. Moreover, by introducing the underlap structure and lowering the bias voltage, an FeHJ-FET with a heterojunction of polarization-down In2Se3 and Gr (In2Se3↓/Gr) exhibits excellent on-state current, meeting the requirements of high-performance (HP) and low-power (LP) applications of the International Roadmap for Devices and Systems (IRDS) 2034. Meanwhile, an In2Se3↓/Gr FeHJ-FET with an underlap length of 1.2 nm (LUL = 1.2 nm) exhibits a current value of 1396.30 µA µm-1, an ON/OFF ratio of 107, and a subthreshold swing that breaks the Boltzmann limit. These results establish that α-In2Se3 is a viable channel material for HP/LP logic FETs within the conventional 2D semiconductor paradigm. Furthermore, they provide a theoretical foundation for engineering vdW ferroelectric heterojunction transistors featuring electrostatically reconfigurable interfacial properties.

This study investigates a rapid, cost-effective method for brain stroke detection using a Recessed Drain (RD) Heterojunction (HJ) Vertically Stacked (VS), Gate-All-Around (GAA), and Nanosheet (NS) Tunneling Field-Effect Transistor (TFET) biosensor. The core innovation lies in the three vertically stacked Silicon nanosheet channels, which provide an expanded sensing surface, enhanced electrostatic control, and improved biomolecule interaction compared to single-channel devices. The proposed RD-HJ-VS-GAA-NS-TFET outperforms conventional biosensor architectures such as planar MOSFETs, multigate FETs, and nanowire FETs, due to its wider channel and multilayered design. To address strain effects arising from silicon growth on SiGe, a comparative analysis between conventional silicon and strained silicon nanosheet channels is explicitly performed. The sensitivity analysis is carried out by examining key parameters, including the Drain Current (ID) response, Subthreshold Swing behavior (SS), and the switching ratio (ION/IOFF). The dielectric constant exhibits significant variation between healthy and stroke-affected brain tissues due to the distinct electromagnetic properties of brain tissues, particularly when they interact with nanocavities at high frequencies. Device performance is analyzed with respect to cavity length, cavity thickness, gate work function configurations, cavity orientation, filling factor, and nonuniform step profiles. The ION/IOFF ratio increases from 3.58 × 1011 under hemorrhagic state (k = 30) to 5.40 × 1011 under healthy state (k = 42) and further to 1.05 × 1012 under ischemic state (k = 61), highlighting the improved switching characteristics of the proposed biosensor, which is crucial for effectively distinguishing between stroke-affected and healthy brain tissues. The proposed RD-HJ-VS-GAA-NS-TFET biosensor shows strong potential as a label-free, Point-Of-Care (POC) diagnostic platform for rapid and accurate stroke detection.

In 2016 Passivated Emitter and Rear Cell (PERC) solar cells started to dominated the PV industry as cell technology. Since 2023, the prices of Tunnel Oxide Passivated Contact (TOPCon) and Heterojunction (HJT) solar cells have become lower, leading to a strong decline in PERC technology till today. TOPCon is now (2025) the mainstream cell technology, while HJT and BC (Back Contact) cells are gaining market share. All technologies feature different cell sizes and quantities, resulting in higher voltages, currents and different reverse characteristics compared to PERC. One major challenge in integrating these new technologies into existing module designs is understanding the reverse bias behavior of solar cells to avoid excessive overheating of partially shaded cells. Evaluating this behavior is crucial for the durability and reliability of PV modules when fully / partially shaded. In such scenarios, shaded cells operate as a load, altering current flow. If the voltage of the series-connected cells exceeds the reverse breakdown voltage of a single cell, that cell can undergo electrical breakdown in reverse bias, consuming energy produced by the other cells. Excessive heat generation due to defects can lead to hot-spots, melting of encapsulants or solder, glass breakage, and even fires. Given the trend toward larger cells (G12, M10) and higher cell quantities (more than 20) for increased module power, a reevaluation of the breakdown behavior of solar cells is urgently needed. To properly understand the behavior of new solar cell technologies in the market, all major architectures were evaluated. Mini-modules were manufactured with the different cell architectures and characterized in forward and reverse bias. The cells/mini-strings were measured at irradiance levels from 100 to 1300 W/m 2 in the 1st quadrant all the way to reverse breakdown in the 2nd quadrant. This was especially challenging for HJT and TOPCon cells as they have a pronounced hysteresis effect in the 1st quadrant. However, neither TOPCon nor HJT shows an accountable hysteresis in the reverse breakdown region. As both technologies are bifacial, the behavior is not significantly different between front and rear side. Besides the higher breakdown voltages, −44 to −49V and around −30V for TOPCon and HJT, respectively, their irradiance dependent reverse current increase is compared to PERC low to very low. The results of TOPCon and HJT solar cells show a promising reverse breakdown behavior even with strings with higher number of solar cells under full and potentially also under partial shading conditions.

The development of high-performance and lightweight microwave absorption materials (MAMs) requires effective strategies such as constructing multicomponent hetero interfaces and integrating multiple loss mechanisms. In this study, a series of magnetic CoNi@CNT nanoparticles were synthesized via a solvothermal method followed by thermal treatment, with the metal source ratio (Co/Ni) systematically adjusted to optimize their microstructure and electromagnetic wave absorption properties. The sample with a Co/Ni molar ratio of 1:1 was identified as the optimal magnetic component. Furthermore, porous MXene (PMXene) was employed as a dielectric substrate and combined with Co1Ni1@CNT through electrostatic self-assembly to form a hierarchical PMXene/CoNi@CNT hetero structure with synergistic dielectric-magnetic properties. This architecture not only enhanced interfacial polarization through multicomponent heterointerfaces but also improved impedance matching and attenuation capability via magnetic loss from CoNi alloys and extended conductive networks from CNT/PMXene. As a result, the composite with a dielectric-to-magnetic ratio of 1:1 at a low filler loading of 8 wt % exhibited a minimum reflection loss (RLmin) of -50 dB and an effective absorption bandwidth (EAB) of 4.3 GHz at a thickness of 1.5 mm, significantly outperforming pure PMXene (RLmin = -35 dB, EAB = 1.9 GHz). This work demonstrates the synergistic advantages of integrating MOF-derived magnetic components with two-dimensional dielectric substrates for high-efficiency microwave absorption, providing new insights into the design of advanced, lightweight electromagnetic functional materials.

With the rapid development of wearable electronics and implantable medical devices, energy storage systems combining high-performance and biodegradability have attracted increasing attention. In this study, an oxide layer was in situ constructed on the surface of molybdenum (Mo) foil via high-temperature annealing, followed by uniform coating of ruthenium oxide (RuO2) nanoparticles, fabricating RuO2@MoOx heterostructure (HS). Furthermore, a quasi-solid-state biodegradable supercapacitor (SCs) was assembled with RuO2@MoOx HS as an electrode, achieving a specific capacitance of 544.6 F/g, along with an areal capacitance of 0.98 F/cm2 and a volumetric capacitance of 497.46 F/cm3 at 1 A/g. The device also exhibited an impressive cycle stability, retaining 85.9% of its capacitance after 2000 cycles, and an attractive energy density of 294.8 W h/kg at 987 W/kg. Moreover, the device underwent complete degradation in 5% hydrogen peroxide solution within 8 days, demonstrating excellent environmental responsiveness and biocompatibility. This work provides an effective strategy for the design and development of high-performance, biodegradable SCs and showcases promising application prospects in transient electronics and implantable biomedical systems.

ABSTRACT Manipulating 2D spintronics and valleytronics by external means is a great challenge in information technology. Building van der Waals (vdW) heterostructure (HS) has been proved to be an efficient method for realizing the control of spin and valley degrees of 2D materials. Here, we discovered that the TeB/CrI 3 HSs with both α‐ and β‐phase TeB monolayers display ferromagnetic (FM) semiconductor and FM metal characters with type‐II band alignments and elevated Curie temperature. By applying biaxial strains, semiconductor‐to‐metal transition and type‐II to type‐III conversion occur for α‐TeB/CrI 3 HS and β‐TeB/CrI 3 HS, respectively. Notably, the valley polarization in β‐CrI 3 /TeB HS can be further tuned under strains, resulting from the broken symmetry and magnetic proximity effect. Our findings provide a microscopic insight into 2D controllable spintronic and valleytronic devices.

Heterostructure (HS) refers to a class of structural materials composed of two or more different chemical components or crystal structures. Integration of Inconel 625 (IN625) nickel-based superalloy and Ti6Al4V (TC4) titanium alloy to a HS material offers a promising strategy to achieve graded thermo-mechanical properties, extended service temperature ranges, and significant weight reduction, which are highly desirable in aerospace applications. However, obtaining a better metallurgical bonding between the two alloys remains a critical challenge. In this study, laser directed energy deposition (L-DED) technology was employed to fabricate IN625/TC4 HS materials with a nonlinear gradient transition, following systematic investigations into the phase composition and crack sensitivity of IN625/TC4 gradient layers prepared from mixed powders of varying compositions. In addition, microstructure, phase distribution, and mechanical properties of HS materials at room temperature were characterized. The metallurgical defect-free IN625/TC4 HS material was successfully prepared, featuring a smooth transition of microstructure, reduced cracking sensitivity, and reliable metallurgical bonding. Furthermore, a novel design concept and illustrative reference for the L-DED fabrication of N625/TC4 HS material with excellent comprehensive performance was presented, while providing a theoretical metallurgical basis and data support for the potential applications of IN625/TC4 HS materials in the field of aerospace.

Interlayer excitons in van der Waals (vdW) heterostructures (HSs) have garnered significant attention due to their unique properties, including prolonged lifetimes and long-range transport. While extensive studies have been conducted on interlayer excitons in HSs composed of different monolayers, research on HSs formed by multilayer constituents remains limited, particularly regarding dipole moments, which play a crucial role in light-matter interactions. In this study, we investigate the dipole moments of interlayer excitons in multilayer WS₂ and InSe HSs using the quantum-confined Stark effect. Our findings reveal that the dipole moment increases monotonically with the number of layers in InSe or WS₂, reaching a maximum of 3.18 e nm, which is the largest value reported to date. Consequently, the dipole-dipole interaction is enhanced with the increasing layer number, as demonstrated by excitation power-dependent measurements. Ab initio calculations further support our experimental results, indicating the delocalization of the excitonic wave function with increasing layer thickness. Our findings introduce a novel layer-engineered mechanism for tuning the dipole moments of interlayer excitons in vdW heterostructures, paving the way for manipulating many-body interactions in low-dimensional quantum systems.

Mixed-dimensional heterojunctions (HJs) between compoundsemiconductorsand transition metal dichalcogenides (TMDCs) provide a versatile platformfor modulating interfacial exciton dynamics. While compound semiconductorsoffer precise compositional control for bandgap tuning across widespectral ranges, they exhibit weak exciton binding energies that limitexciton stability at room temperature. Mixed-dimensional HJs addressthis limitation by integrating compound semiconductors with TMDCs,whose strong quantum confinement and reduced dielectric screeningenable the formation of stable interlayer excitons with enhanced light-mattercoupling. Here, we demonstrate a mixed-dimensional heterojunctioncomprising trilayer MoS2 interfaced with an Al2O3/InGaN/GaN single quantum well (QW), designed to investigateinterlayer exciton behavior. Quantum confinement in the QW localizescarriers near the heterointerface, allowing direct observation ofinterlayer excitonic states. Low-temperature photoluminescence measurementsrevealed a distinct emission peak at 2.02 eV, indicating the formationof interlayer excitons at the heterointerface. This strategy offersa unique approach for engineering exciton dynamics in mixed-dimensionalsystems, with implications for optoelectronic devices that leveragetailored interfacial exciton dynamics.

This brief review mainly highlights the applications of the determined intrinsic Fermi energy level in semiconductors and insulator materials. The electrical properties of a Metal-Oxide-Semiconductor (MOS) device designed on any parabolic semiconductor and having SiO2 as the oxide dielectric, can be calculated theoretically once the intrinsic Fermi energy levels in the semiconductor and the oxide are known. Also, Hetero junction devices can be better designed with this known intrinsic Fermi energy level in materials.

Rigid electronic devices suffer from poor adaptability and low comfort, limiting real-time physiological monitoring. Owing to its outstanding electrical, mechanical, and biocompatible properties, graphene has emerged as an ideal core material. This paper reviews the research progress of graphene-based flexible wearable devices. At the level of device innovation, it covers not only research on optimizing device performance through hetero structure design, but also the development of laser-induced graphene batch preparation processes to lay a solid foundation for the large-scale production of devices. In terms of system integration technology, in-depth exploration of multimodal sensing synergy mechanisms to achieve precise collection of multiple physiological signals, as well as research on hybrid energy supply schemes to ensure long-term stable operation of the equipment. In the field of clinical applications, a detailed analysis of its practical cases of real-time capture of cardiac electrical activity in dynamic electrocardiogram monitoring, facilitating early warning of cardiovascular diseases, and real-time monitoring of wound microenvironment in diabetic wound management, to promote wound healing. At the same time, it clearly points out the key challenges currently faced in this field: the high cost of large-scale preparation restricts the popularization of the technology; The lack of long-term stability affects the reliability of equipment use. Finally, looking forward to the future development direction, propose the core path of combining artificial intelligence and edge computing to improve data processing efficiency and building a closed-loop diagnosis and treatment system to achieve precise disease intervention.

Mapping the spatial distribution of valley polarization at the nanoscale is essential for understanding the influence of local inhomogeneities to the performance of transition metal dichalcogenide (TMD) valleytronic devices but remains challenging due to the spatial resolution limits of conventional optical techniques. Herein, we introduce tip-enhanced circularly polarized photoluminescence (TECPPL) imaging, enabling the simultaneous mapping of exciton emission intensity and valley polarization. We investigate a monolayer (1L) MoS2/WS2 heterojunction (HJ) and observe pronounced near-field (NF) photoluminescence (PL) enhancement under both σ+σ+ and σ+σ- polarization configurations. A NF circular polarization degree (Pc) of 0.67 is achieved, representing a 4-fold increase over the far-field (FF) measurement. The high local signal enhancement enables direct visualization of spatial variations in both the PL intensity and Pc with a spatial resolution of ∼20 nm. Our results establish TECPPL as a powerful nanospectroscopic tool and offer new insights into the spatially resolved valleytronic behavior of TMD heterostructures.

A hyperglycemic microenvironment providing a favorable niche for bacterial infection and impairing cellular functions, resulting in delayed healing of infected diabetic wounds has become an increasingly severe complication. The prevailing therapeutic strategies primarily focus on the intrinsic antibacterial properties of biomaterials to facilitate subsequent wound healing, without addressing the high-glucose environment. To address this challenge, we developed glucose-responsive heterojunction (HJ) nanocatalytic membranes by integrating poly(lactic-co-glycolic acid) (PLGA) electrospun membranes with GaIn/Ag2S HJs and glucose oxidase (GOx), aiming to promote the healing of infected diabetic wounds. In this system, GOx continuously consumes glucose to generate hydrogen peroxide (H2O2), which both suppresses bacterial metabolism and improves the cellular microenvironment. The GaIn/Ag2S HJs catalyze the generated H2O2 into highly lethal hydroxyl radicals (˙OH) via a Fenton-like reaction, owing to their heterojunction structure, exhibit excellent photothermal effects (ΔT ≈ 25 °C within 10 min) and reactive oxygen species (ROS) production under near-infrared (NIR) irradiation, resulting in rapid synergistic antibacterial action (achieving >98% eradication of S. aureus and E. coli in vitro). Moreover, in vivo experiments demonstrate that the HJ's nanocatalytic membrane remodels chronic stagnant wounds into regenerative ones by eradicating bacteria, reducing inflammation, enhancing collagen deposition and promoting angiogenesis. This work presents a strategy that endows HJ nanocatalytic membranes with a glucose-triggered antibacterial effect, offering a promising avenue for chronic diabetic wound repair.

Laser technologies enable the separation and removal into open space, as well as onto various substrates, of structural fragments of any dispersibility formed in gaseous, liquid, and solid matrices. The work focuses on the study of synergistic processes responsible for the self-organization of nanoclusters (NC) coherent with the matrix. When forming NC, due to the presence of matrix material, a significantly greater number of degrees of freedom are involved than in the formation of molecules. A model approach is proposed that opens up new opportunities for studying the processes of film formation on the surface of a solid body in the form of a nanocluster subsystem (NCS). The process of NCS film GP formation is proposed to be considered from the perspective of ideas about the clustered phase of matter. NCP can be used as a component of a film heterojunction (HJ) with extremely interesting practical applications. Such a film HJ with NCP has high photosensitivity, which can open up new real practical opportunities for the creation of highly efficient hypersensitive optical sensors.

Abstract This study explore the radiation damage effects on GaInP/GaAs heterojunction (HJT) solar cells when subjected to 1 MeV electron irradiation. Light I-V measurements show that V oc , J sc and Pmax of the cells exhibit a logarithmic degradation pattern with increasing electron irradiation fluence. Under identical irradiation conditions, the degradation of J sc is substantially less pronounced than that of V oc . Under the same conditions, the heterojunction cell shows better radiation resistance, mainly as its V oc degradation rate with fluence increase is lower than the homojunction cell. Spectral response analysis reveals that 1 MeV electron radiation mainly causes long-wave zone damage in the GaInP/GaAs HJT cells, which intensifies as irradiation fluence accumulates. Dark characteristic analysis indicates that both recombination and diffusion currents in the cells rise with increasing irradiation fluence, with recombination current dominating the dark current. Deep level transient spectroscopy tests show that 1 MeV electron irradiation introduces four defects (H1-H4) in the cells, located at H1(E v +0.717 eV)/H 4 * (E v +0.744 eV), H2(E v +0.369 eV), H3(E v +0.282 eV) and H4(E v +0.032 eV). Among these, the concentration H1 of defects increases most drastically with fluence and directly correlates with the rapid degradation of cell performance under high fluence, making it the crucial factor responsible for the swift degradation of GaInP/GaAs HJT cells under high fluence 1 MeV electron irradiation.

Two-dimensional materials possess exceptional optoelectronic properties, including high carrier mobility and tunable bandgaps, making them highly suitable for various electronic and optoelectronic applications. While inorganic 2D materials exhibit ultrafast and efficient interlayer charge transport, they suffer from limited light absorption capabilities. In contrast, organic semiconductors offer broad spectral absorption but are constrained by their inherently low charge carrier mobility. Conjugated polymers such as poly(3-hexylthiophene) (P3HT) exhibit excellent mechanical flexibility, solution processability, and film-forming capabilities, enabling the scalable fabrication of high-performance flexible optoelectronic devices. To overcome these limitations, we successfully developed a type-II MoSe2/P3HT heterostructure (HS) that combines the complementary advantages of both material systems. Steady-state absorption measurements reveal that the MoSe2/P3HT HS exhibits both broader spectral coverage and stronger absorption intensity compared with its individual components. Photoluminescence (PL) spectroscopy studies demonstrate significant PL quenching in the HS, suggesting efficient interfacial charge transfer between the constituent layers. Transient absorption spectroscopic results reveal efficient interfacial hole transfer from MoSe2 to P3HT with a time scale of 19.9 ps. Notably, the MoSe2/P3HT heterostructure exhibits an exceptionally slow charge recombination lifetime of 901.4 ps, significantly surpassing that of inorganic-inorganic van der Waals heterostructures. Organic-inorganic hybrids demonstrate enhanced light absorption, ultrafast charge transfer, and prolonged carrier lifetimes, rendering them highly promising for high-efficiency photovoltaics, broadband photodetectors, and other advanced optoelectronic applications in the future.