Nonvolatile ferroelectric control of both magnetic anisotropy and half-metallicity in multiferroic heterostructures GdI2/Al2Te3

Abstract

Nonvolatile all-electric spin manipulation is optimal for low-power and compact spintronic devices. Herein, using first-principles density functional theory, we propose a bilayer van der Waals (vdW) multiferroic heterostructure (HS) GdI2/Al2Te3 constructed of ferromagnetic electride GdI2 and ferroelectric (FE) semiconductor Al2Te3 to possess robust magnetoelectric coupling near room temperature. By reversing the electrical polarization states in Al2Te3, the magnetoelectric coupling not only allows the reversible switch of GdI2 from semiconductor to half-metal but also promotes the reversible transition of magnetocrystalline anisotropy from in-plane to out-of-plane. More importantly, the high Curie temperature (TC) of GdI2 and the unspoiled semiconducting nature of Al2Te3 in the HS predict the practical feasibility of this spin manipulation. Additionally, GdI2 exhibits substantial valley polarization when its magnetization direction changes to out-of-plane. These findings pave the way for achieving robust and efficient spin manipulation through all-electric control and also provide implications for multiferroic memory devices with highly efficient data reading and writing based on the HS.