Heterojunction Contact Research Articles

Study on the interface electronic structure, strain modulation and transport properties of composite heterojunction of 2D semimetal TiS2 and MX2 (M=Mo, W, Cr, Zr, Hf; X=S, Se, Te) semiconductor

Ohmic contacts play a crucial role in realizing high-performance electronic devices based on two-dimensional materials. The contact between semimetals and semiconductors can mitigate the formation of metal-induced gap states (MIGS), thereby reducing the SBH, enhancing the efficiency of high charge injection, and facilitating the establishment of ohmic contacts. This study involves a systematic exploration of the contact characteristics between the two-dimensional semimetal TiS2 and semiconductor MX2 (M = Mo, W, Cr, Zr, Hf; X = S, Se, Te) through first-principles calculations. It is found that the TiS2/MoSe2 and TiS2/WSe2 heterojunction achieve ohmic contact. Investigations into their transport properties reveal that significant currents can be observed at relatively low voltages, indicating excellent transport performance of these heterojunctions. The TiS2/CrSe2 and TiS2/HfSe2 contact heterojunctions also show low Schottky barrier height (SBH), with the barrier height being adjustable under strain. The SBH of TiS2/CrSe2 and TiS2/HfSe2 heterojunctions are very close to zero under stresses of 4 % and −4%, respectively. This also implies that our research can offer valuable guidance for the development of adjustable Schottky nano-devices and high-performance optoelectronic devices.

Critical review on the controllable growth and post-annealing on the heterojunction of the kesterite solar cells

Abstract Kesterite-structured solar cells have drawn significant attention due to their low-cost and environmental friendly composition. Recently, a remarkable certified power conversion efficiency (PCE) of 14.9% has been achieved, indicating a broader prospect for kesterite solar cells. However, this PCE is still far below the theoretical efficiency and the PCE of predecessor Cu(In,Ga)Se2 solar cells, which have been commercialized successfully. The relatively low device efficiency primarily originates from the unfavourable bulk and heterojunction of kesterite solar cell. Therefore, the achievement of high PCE in kesterite solar cells heavily relies on high-quality absorber layers and appropriate heterojunction contact. In this review, we first summarize the recent studies on the controllable growth of kesterite thin film. Based on different fabrication methods, various endeavors in revealing the reaction mechanism and manipulating the growth pathway of kesterite thin films have been introduced. Subsequently, studies related to the optimization of heterojunction by post-annealing process are also summarized. This simple and convenient approach can effectively enhance the heterojunction contact and promote the carrier transportation. Finally, this article discusses the future development strategy and perspectives towards achieving enhanced PCE in kesterite thin film solar cells

Nanoskiving of van der Waals Materials toward Edge/Basal Plane Contact Heterojunctions for High-Performance Photodetection.

The unique features of edges in van der Waals materials may lead to edge-basal plane contacts that could provide new opportunities for electronic and optoelectronic devices. However, few studies have addressed edge/basal plane contact heterojunctions owing to the formidable challenges in integrating edges with the basal plane to form a heterojunction. Here, taking the example of black phosphorus (BP)/ReS2, a heterojunction with contact between the edge and the basal plane was successfully achieved by the introduction of a nanoskiving technique to fabricate BP edges with controlled orientation, followed by the dry transfer of a ReS2 flake. The deformation of BP during the nanoskiving process was clearly revealed, where interlayer slipping in the BP determined the formation of the edges. The edge/basal plane contact heterojunctions based on BP/ReS2 exhibited a reverse-rectifying behavior upon contact, and a high rectifying current was attributed to direct tunneling and Fowler-Nordheim tunneling in low and high bias regimes, respectively. As a photodetector, the heterojunction diode demonstrated an impressive responsivity of 65 A/W, a rapid response time (<10 ms), and polarization-sensitive detection under 532 nm illumination without gate biasing.

Post-annealing-free BaOxFy/LiF-based stack electron-selective contacts for high efficiency crystalline silicon solar cells featuring ultra-low contact resistivity

In silicon heterojunction and tunnel oxide passivating contact crystalline silicon (c-Si) solar cells based on successful passivating contacts technologies, an annealing activation step is indispensable to achieve a suitably low contact resistivity (ρc), which is a costly and non-ideal process. Here, combined with a calcium aluminium (Ca:Al) alloy electrode, a low work function barium oxide and lithium fluoride (BaOxFy/LiF) stack electron-selective contact (ESC) without an annealing activation step on c-Si solar cells clinches an ultra-low ρc of 1.4 mΩ·cm2 delivering a power conversion efficiency (PCE) of 20.5 %. The BaOxFy/LiF/Ca:Al stack structure is built by BaOx/LiF/Ca/Al hybrid structure via a facile continuous thermal evaporation process. As a proof of concept, the stacked BaOxFy/LiF/Ca:Al/Al contact is applied to the rear side of c-Si solar cells, achieving a PCE of 20.5 % with an open-circuit voltage of 625.7 mV, an impressive fill factor of 83.5 % and a short-circuit current density of 39.2 mA/cm2. With the aid of a transient photovoltage setup, the carrier recombination mechanism of the stacked BaOxFy/LiF/Ca:Al structure is explored. This work demonstrates an alternative idea for undoped ESCs, showing potential for next-generation cost-effective ultrathin-slice c-Si solar cells (∼80 μm) with high efficiency, and low-parasitic light absorption losses.

Facile fabrication of AgBr/HCCN hybrids with Z-scheme heterojunction for efficient photocatalytic hydrogen evolution

Constructing a Z-scheme heterojunction with enhanced photocatalytic hydrogen evolution for graphitic carbon nitride-based (g-C3N4) composites is challenging because integrating g-C3N4 with other semiconductors, without specific band structure design, typically results in type I or type II heterojunctions. These heterojunctions have lower redox ability and limited enhancement in photocatalysis. Herein, we select highly crystalline carbon nitride (HCCN) as a proof-of-concept substrate. For the first time, we develop a AgBr nanosphere/HCCN composite photocatalyst that features an all-solid-state direct Z-scheme heterojunction for visible-light photocatalytic hydrogen evolution. The electron transfer mechanism is initially studied from the band structures and Fermi levels of HCCN and AgBr. It is subsequently confirmed by X-ray photoelectron spectroscopy (XPS), and electron microscopy. The close heterojunction contact and the built-in electron field of the Z-scheme heterojunction promote the migration and separation of photogenerated electrons and holes in the composite photocatalyst. Due to the redistribution of charge carriers, the photocatalyst shows superior redox capability and a markedly enhanced hydrogen evolution performance compared to its individual components. Combining all the advantages, AgBr nanosphere/HCCN reached an apparent quantum efficiency (AQE) of 6 % under the illumination of 410 nm, which is 4 times higher than that of the single HCCN component.

MIL‐68(In)‐derived In2O3/In2S3/C: In situ synthesis and efficient visible‐light photocatalytic H2O2 generation

Photocatalytic reduction of O2 to generate H2O2 shows an excellent environment friendly nature and the controllable H2O2 concentrations and is found the prospect of applications in H2O2‐assisted redox. In this paper, MIL‐68(In) is chosen as a sacrifice precursor to construct a multi‐component photocatalyst of In2O3/In2S3/C by integrated in situ sulfidation and pyrolysis routes. The resulting In2O3/In2S3/C inherited the geometry of MIL‐68(In) and represents the hollow microtube with rough surface. The photocatalytic activity of the In2O3/In2S3/C in H2O2 generation is investigated systematically, and the contrast tests were conducted over the In2S3/MIL‐68 synthesized by in situ sulfidation but without subsequent pyrolysis, to explore the advantages of the In2O3/In2S3/C heterostructure. The best photocatalytic H2O2 evolution is observed by the In2O3/In2S3/C with a value of 934.6 μmol/L within 1 h, which is higher than that by In2S3/MIL‐68 and other previously reported photocatalysts. The photoelectrochemical analyses and ESR measurements clarify that contact heterojunction and matched band potentials are responsible for the effective separation of electrons and holes, and the O2·‐ are the main active species in the photocatalytic H2O2 evolution. The outstanding photocatalytic activity, structure stability, and the easily regulated H2O2 concentrations render the In2O3/In2S3/C the prospect applications in the H2O2‐assisted redox reactions.

Hierarchical Ohmic Contact Interface Engineering for Efficient Hydrazine-Assisted Hydrogen Evolution Reaction.

Hydrazine oxidation reaction coupled with hydrogen evolution reaction (HER) is an effective strategy to achieve low energy water splitting for hydrogen production. In order to realize the application of hydrazine-assisted HER system, researchers have been focusing on the development of electrocatalysts with integrated dual active sites, while the performance under high current density is still unsatisfying. In this work, hierarchical Ohmic contact interface engineering is designed and used as a bridge between the NiMo and Ni2 P heterojunction toward industrial current density applications, with the charge transfer impedance greatly eliminated via such a pathway with low energy barrier. As a proof-of-concept, the importance of charge redistribution and energy barrier at the Ohmic contact interface is investigated by significantly reducing the voltage of overall hydrazine splitting (OHzS) at high current density. Intriguingly, the NiMo/Ni2 P hierarchical Ohmic contact heterojunction can drive current densities of 100 and 500 mA cm-2 with only 181 and 343 mV cell voltage in the OHzS electrolyzer with high electrocatalytic stability. The proposed hierarchical Ohmic contact interface engineering paves new avenue for hydrogen production with low energy consumption.

Effective BPA degradation via atom-sharing Bi/Bi4O5Br2:Yb3+, Tm3+ plasma heterojunctions with enhanced charge transfer and light absorption

To achieve efficient degradation of organic pollutants, two critical objectives are enhancing photogenerated carrier separation and expanding the spectral response range. In this study, we synthesized atom-sharing Bi/Bi4O5Br2:Yb3+,Tm3+ (Bi/BYT) heterojunctions with surface plasmon resonance (SPR) effects and upconversion (UC) by employing self-sacrificial Bi4O5Br2:Yb3+,Tm3+ (BYT) fractions as a source of metallic Bi. Results revealed that the optimal Bi/BYT-2 catalyst exhibited the highest BPA degradation efficiency within 120 min, representing a significant 1.3-fold improvement over BYT alone. This outstanding catalytic performance can be attributed to the synergistic interplay between UC fluorescence, the unique SPR effect of Bi metal, and the atom-sharing heterojunction. These factors effectively broaden the spectral absorption range and significantly enhance the separation and utilization efficiency of photoinduced carriers. This study lays the groundwork for the development and design of novel atomic-level contact heterojunctions, offering insights into enhancing photocatalytic efficiency through plasmon resonance and UC fluorescence on non-precious metal surfaces.

Simplified method for the synthesis of efficient Ohm-Schottky heterojunction photocatalysts for hydrogen evolution reaction and nitrogen fixation

Multifunctional semiconductor photocatalyst with Ohmic-Schottky contact heterojunctions for hydrogen evolution reaction (HER) and nitrogen fixation (NF) were constructed by modifying CdS with bimetallic Co2xNi2(1-x)P (xCNP) and thin layer Ti3C2 (TLTC) containing -Ox rich functional groups. Under the optimal conditions (2 % 0.2CNP@CdS/2% TLTC), it yielded a hydrogen evolution rate of up to 1.72 mmol h−1 and a nitrogen fixation rate of 656.82 μmol L−1 h−1, corresponding to an apparent quantum efficiency (AQE) of 59.81 %. The remarkable HER and NF properties can be attributed to the improved electron transfer efficiency of the double transition metal and the improved surface N2/NH3 adsorption energy. The construction of Ohmic-Schottky contact heterojunctions reduced the HER overpotential and improved the separation efficiency of the photogenerated carriers.

Rational design an oval heterostructure and tight linking interface of ZnS@CdS(3) for sensitively photoelectrochemical bioanalysis of PSA

Photoactive material with heterostructures could be effectively employed to promote the photoelectrochemical (PEC) property. Herein, two species heterostructured ZnS@CdS(1−2) composites derived from ZIF-8-S MOFs via a sulfofication reaction in situ using Cd(NO3)2, CdC12 cadmium reagents, and further gained the oval ZnS@CdS(3) after annealing the ZnS@CdS(2). Under irradiation, the PEC results showed that the photocurrent response of ZnS@CdS(3) signally enhanced compared to disordered heterostructures of ZnS@CdS(1), ZnS@CdS(2) and pure ZnS or CdS. It was ascribed to the staggered levels based on matching band-gap to form type II heterojunction of ZnS@CdS(3) could facilitate photo-induced electron/hole (e-/h+) separation and transfer. The obtained photoelectric material with a tight connecting interface also could reduce the carriers transport distance. Besides, the structured and well-distributed ZnS@CdS(3) was beneficial to improve synergistic effect on every component, which resulting in violently photocurrent output. This ZnS@CdS(3) modified ITO electrode to create the PEC biosensor (BSA/anti-PSA/ZnS@CdS(3)/ITO) had been successfully applied for the PSA detection with a wide linear range of 0.001 ∼ 150 ng mL−1 and ultralow detection limit of 0.27 pg mL−1. This research innovatively designed a close contact heterojunction interface with superior PEC nature for biosensor preparations.

A hair-ball heterostructure of MnS-MnS2/CdS with compact linking interface for ultrasensitive photoelectrochemical bioanalysis of carcinoembryonic antigen

The heterostructured photoelectric material is supposed to markedly promote the photoelectrochemical (PEC) property. Herein, the species heterostructured MnS/CdS and MnS-MnS2/CdS(1∼2) composites derived from Mn-ZIF MOFs via a sulfofication reaction using Cd(NO3)2, CdC12 cadmium source, respectively. Under irradiation, the PEC tests showed that the photocurrent response of MnS-MnS2/CdS(1∼2) signally enhanced compared to globose MnS/CdS heterostructure and pure MnS or CdS. It was ascribed to the matching band-gap to form type II heterojunction in MnS-MnS2/CdS(1∼2) which dramatically facilitated photo-induced electron/hole (e−/h+) separation and transfer. The hair-ball morphologies structure of MnS-MnS2/CdS(1∼2) with large number of pores was beneficial to improve penetrating efficiency of the electrolyte liquid. Meanwhile, the well-synergistic effect on the MnS, MnS2, CdS components and with tight connecting heterojunction interface among MnS-MnS2/CdS(1∼2) which also led to violently photocurrent output. Besides, the chitosan (CS) was covalently coupled with glutaraldehyde (GLD) to obtain steady composite film, and the cross-linker of GLD can achieve the high efficiency to graft the Apt-CEA (aptamer) biomolecules, which resulting in the promotion of hybridization reaction efficiency of the CEA target. Hence, this created biosensor of Apt-CEA/GLD-CS/MnS-MnS2/CdS(1)/ITO for the CEA detection displayed a wide linear range from 0.001 to 18 ng mL−1 and with ultralow detection limit of 0.313 pg mL−1. This research innovatively prepared a contact heterojunction interface with special porosities structure, which had superior PEC nature for the fabrication of high-performance biosensor.

Enhancing the Selectivity and Transparency of the Electron Contact in Silicon Heterojunction Solar Cells by Phosphorus Catalytic Doping

AbstractAn intrinsic hydrogenated amorphous silicon (a‐Si:H(i)) film and a doped silicon film are usually combined in the heterojunction contacts of silicon heterojunction (SHJ) solar cells. In this work, a post‐doping process called catalytic doping (Cat‐doping) on a‐Si:H(i) is performed on the electron selective side of SHJ solar cells, which enables a device architecture that eliminates the additional deposition of the doped silicon layer. Thus, a single phosphorus Cat‐doping layer combines the functions of two other layers by enabling excellent interface passivation and high carrier selectivity. The overall thinner layer on the window side results in higher spectral response at short wavelengths, leading to an improved short‐circuit current density of 40.31 mA cm−2 and an efficiency of 23.65% (certified). The cell efficiency is currently limited by sputter damage from the subsequent transparent conductive oxide fabrication and low carrier activation in the a‐Si:H(i) with Cat‐doping. Numerical device simulations show that the a‐Si:H(i) with Cat‐doping can provide sufficient field effect passivation even at lower active carrier concentrations compared to the as‐deposited doped layer, due to the lower defect density.

Effect of heterojunction order between CaTiO3 and Mn doped SrTiO3 on memristive performance and its mechanism analysis

It is well-known that memristive devices can be applied to brain-like parallel computing, but the interface effects have an indelible impact on memristive performance. In this work, two memristive devices with Ag/CTO/SMTO/Ti and Ag/SMTO/CTO/Ti structures were fabricated based on the heterojunctions between CaTiO3 (CTO) and Mn-doped SrTiO3 (SMTO). By comparison, the Ag/CTO/SMTO/Ti device shows relatively improved memristive characteristics with the optimum sweeping voltage of 1.2 V and the switching ratio of ∼12. That is to say, changing the heterojunction order between CTO and SMTO can regulate the memristive behaviors of the device because the interface effect caused by heterojunction contact has influence on the particle migration, resulting in different rates of conductive filaments formation, so that the memristive characteristics of the device can be regulated. Finally, the resistive switching (RS) characteristics of the device are explained by in-depth mechanism analysis based on fitting experimental data. Therefore, this work not only provides a feasible method for improving the memristive characteristics of the device, but also helps to understand the influence of the interface effect on the particles motion, thereby laying the foundation for the preparation of high-capacity and efficient memristive device in artificial intelligence (AI) applications.

Adaptive Interfacial Contact between Copper Nanoparticles and Triazine Functionalized Graphdiyne Substrate for Improved Lithium/Sodium Storage

AbstractThe high activity of nano‐sized metal particles (NMPs) makes it easy to appear uncontrolled aggregation, which seriously affects Li/Na storage in electrode materials. Introducing adaptive substrates with proper affinity to NMPs is an effective strategy that optimizes the stability and capacity of the related electrodes. Herein, a comprehensive strategy for the fabrication of adaptive interfacial contacts between metallic Cu nanoparticles (NPs) and triphenyl‐substituted triazine graphdiyne (TPTG) substrates is reported. The sp C in the acetylenic linkers and N heteroatoms in the triazine groups synergistically stabilized the Cu NPs loaded onto the TPTG substrates. The stabilizing effect of the TPTG substrate induces a reversible lattice change of the Cu NPs during the charge–discharge process, thus efficiently facilitating the stable transfer of Li+/Na+. Intrinsic mechanism analysis indicates that the heterojunction contact interface of Cu NPs/TPTG provides branched charge transfer pathways from Li/Na to the Cu NPs and TPTG substrates, which synergistically adjusts the affinity to Li/Na atoms and ultimately improves the electrochemical performance in Li/Na storage. The investigation of the structure–property relationship deepens the understanding of the function of heterointerfaces, which is essential for optimizing the performance of energy storage devices.

Rational Design of Goethite-Sulfide Nanowire Heterojunctions for High Current Density Water Splitting.

The preparation of efficient and stable bifunctional electrocatalysts for electrochemical overall water splitting (OWS) to scale up commercial hydrogen production remains a great challenge. Here, we synthesized heterojunction structures consisting of Co9S8/Ni3S2 nanowire arrays and amorphous goethite (FeOOH, α-phase) particles as efficient OWS catalysts using an interface engineering strategy. The interfacial charge inhomogeneity caused by the heterojunction contact leads to the generation of a built-in electric field, which makes the electron-deficient FeOOH and electron-rich Co9S8/Ni3S2 favorable for hydrogen/oxygen evolution reaction, respectively, thus ensuring the excellent activity of FeOOH/Co9S8/Ni3S2 as a bifunctional catalyst. FeOOH/Co9S8/Ni3S2 exhibits impressive catalytic activity for the oxygen evolution reaction, achieving an ultralarge current density of 1000 mA cm-2 needed as low as 265 mV overpotential, and its stability was tested up to 1440 h. Furthermore, an excellent OWS output (1.55 V to generate 10 mA cm-2) is achieved by the bifunctional FeOOH/Co9S8/Ni3S2 catalysts.

Z‐scheme ZnSnO3/Bi2WO6 with synergistic polarized electric field for efficient removal of diclofenac

The built‐in electric field induced by piezoelectric effect for suppressing the electron–hole recombination has gained substantial attention recently. In this study, a novel Z‐scheme ZnSnO3/Bi2WO6 (ZSO/BWO) piezo‐photocatalyst with synergistic polarized electric field was synthesized by a simple impregnation method. The optimized 1% ZSO/BWO shows high piezo‐photodegradation efficiency (99.9%, 60 min) and mineralization (42%, 60 min) of diclofenac (DCF) under the synergistic action of ultrasound and light, far exceeding that under sole ultrasound or illumination. The remarkable enhanced piezo‐photocatalytic activity of ZSO/BWO composite was attributed to the increased absorption, improved charge transfer, Z‐scheme heterojunction, and tight surface contact between ZSO and BWO. Moreover, the Z‐scheme mechanism of ZSO/BWO composites is studied in depth and confirmed by the free radical capture experiment and electron spin resonance technology. In addition, the corresponding intermediates of DCF degradation and the possible degradation pathways that were proposed on ZSO/BWO composites were analyzed by liquid chromatography–mass spectrometry and DFT. This work offers an efficient approach for constructing and preparing the highly efficient piezo‐photocatalysts for converting solar and mechanical vibration energies.

A Direct Z‐Scheme Quasi‐2D/2D Heterojunction Constructed by Loading Photosensitive Metal–Organic Nanorings with Pd Single Atoms on Graphitic–C3N4for Superior Visible Light‐Driven H2Production

Rational design of Z‐scheme composite photocatalysts with 2D/2D heterojunction is a promising method to convert solar energy into chemical fuels. Herein, a Pd2L2‐type metal–organic nanoring (MAC‐1), which can serve as a photochemical molecular device (PMD), is assembled by catalytic Pd2+centers and photosensitive ligands (M‐7). Then MAC‐1 is combined with graphite‐phase carbon nitride (g‐C3N4) to construct a direct Z‐scheme quasi‐2D/2D composite material MAC‐1/g‐C3N4with Pd single atoms. The optimized 3.5% MAC‐1/g‐C3N4single‐atom catalyst (SAC) shows better photocatalytic performance than g‐C3N4, MAC‐1, Pd/g‐C3N4, M‐7/Pd/g‐C3N4, and 3.5% MAC‐1/g‐C3N4‐mixed and also displays good durability for H2production. The H2yield rate of 22.3 mmol g−1 h−1and the corresponding turnover number based on Pd or MAC‐1 amount (TONPd/TONMAC‐1) of 119 172/238 344 within 50 h are achieved for 3.5% MAC‐1/g‐C3N4, which is one of the highest records of all visible light‐driven g‐C3N4‐based photocatalysts reported. Such remarkably enhanced activity can result from the enhanced charge carrier mobility, improved light absorption ability, enlarged heterojunction contact interface, and highly monodispersed Pd active sites. The Z‐scheme SAC composed of metal–organic nanorings and g‐C3N4nanosheets therefore has great potential as an efficient and sustainable photocatalyst for solar‐driven H2production.

Defect-induced atomic-level intimate interface of a hollow Ov-CeO2/CdS photocatalyst with a Z-scheme to boost hydrogen evolution

Construction of Z-scheme heterojunction catalysts with high-speed charge transfer channels for efficient photocatalytic hydrogen production from water splitting is still a challenge. In this work, a lattice-defect-induced atom migration strategy is proposed to construct an intimate interface. The oxygen vacancies of cubic CeO2 obtained from a Cu2O template are used to induce lattice oxygen migration and form SO bonds with CdS to form a close contact heterojunction with a hollow cube. The hydrogen production efficiency reaches ∼12.6 mmol·g−1·h−1 and maintains a high value over 25 h. A series of photocatalytic tests combined with density functional theory (DFT) calculations show that the close contact heterostructure not only promotes the separation/transfer of photogenerated electron-hole pairs but also regulates the intrinsic catalytic activity of the surface. A large number of oxygen vacancies and SO bonds at the interface participate in charge transfer, which accelerates the migration of photogenerated carriers. The hollow structure improves the ability to capture visible light. Therefore, the synthesis strategy proposed in this work, as well as the in-depth discussion of the interface chemical structure and charge transfer mechanism, provides new theoretical support for the further development of photolytic hydrogen evolution catalysts.

SCALING MODELS OF ELECTRICAL PROPERTIES OF PHOTOAND BETA-CONVERTERS WITH NANO-HETEROJUNCTIONS

The new methodology is developed and the computer simulation of scaling the electrical properties of nanochips-generators of a semiconductor energy converter based on nanoscale contact heterojunctions to ensure maximum power is considered. The variant of optimization of the scaling solution is represented by the connection of nanoheterojunctions with an increase in the current density of nonequilibrium carriers and the open circuit voltage. A generalized equivalent scheme for variations of internal properties and identification of experimental data is presented. The influence of the type of scaling and model parameters is analyzed.

A strategy of high-sensitivity solar-blind photodetector for fabricating graphene surface modification ZnGa2O4/Ga2O3 core-shell structure nanowire networks

One-dimensional core-shell nanowires are considered the optimal choice for high-performance photodetectors with the ideal interfacial area, well-controlled structure, and better light absorption ability. There are lots of research about Ga2O3 wide band gap semiconductors applied in solar-blind photodetectors. However, the defects such as relatively slow response/recovery time and poor response rate have limited its application in photodetectors. In this work, a GaZn2O4/Ga2O3 core-shell nanostructure is successfully prepared by the CVD (Chemical Vapor Deposition) technique. Then, a strategy of MSM solar blind ultraviolet detector based on graphene surface modification core-shell nanowires is proposed. The device has a characteristic of nanowire network structure, interface heterojunction, and Schottky contact. According to the results, a significant performance of the device with 0.1% graphene surface modified ZnGa2O4/Ga2O3 nanowires is achieved, like, the faster response time (rise/down time, 130 m s/13 m s), and the higher detection capability of the solar-blind ultraviolet detector (responsivity, 64.5 mA/W). Our work provides a facile fabrication procedure to construct a high-performance photodetector.